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He J, Liu Y, Qu J, Zhang J, Fan F, Li C. The Ferroelectric Effects of Rhombohedral and Tetragonal BiFeO 3 in Photoelectrochemical Water Splitting. J Phys Chem Lett 2024; 15:6031-6037. [PMID: 38819116 DOI: 10.1021/acs.jpclett.4c01245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
The phase of BiFeO3 (BFO) as well as its domain configuration can be tuned by strain engineering. Phase change may greatly influence the properties of the polarization field and hence charge separation. However, the photoelectrochemical properties of different BFO phases have rarely been addressed. Here, the photoelectrochemical study of tetragonal (T-) and rhombohedral (R-) phase BFO films was conducted under visible light illumination. The photocurrent density of R-BFO is 5 times that of T-BFO. A ferroelectric domain study shows that T-BFO features single domain structure in contrast to the polydomain structure of R-BFO. Higher charge separation efficiency is achieved in R-BFO, dominated by the domain walls as conducting pathways for efficient charge separation and transfer. This work provides a fundamental understanding of the photoelectrochemical properties of T- and R-BFO, offering valuable insights for the development of BFO-based materials for solar energy conversion.
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Affiliation(s)
- Jiandong He
- School of Materials Science and Engineering and National Institute for Advanced Materials, Nankai University, Tianjin 300350, People's Republic of China
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Jiangshan Qu
- Division of Energy Research Resources, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Jie Zhang
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Fengtao Fan
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Can Li
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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2
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Grünebohm A, Marathe M, Khachaturyan R, Schiedung R, Lupascu DC, Shvartsman VV. Interplay of domain structure and phase transitions: theory, experiment and functionality. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:073002. [PMID: 34731841 DOI: 10.1088/1361-648x/ac3607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Domain walls and phase boundaries are fundamental ingredients of ferroelectrics and strongly influence their functional properties. Although both interfaces have been studied for decades, often only a phenomenological macroscopic understanding has been established. The recent developments in experiments and theory allow to address the relevant time and length scales and revisit nucleation, phase propagation and the coupling of domains and phase transitions. This review attempts to specify regularities of domain formation and evolution at ferroelectric transitions and give an overview on unusual polar topological structures that appear as transient states and at the nanoscale. We survey the benefits, validity, and limitations of experimental tools as well as simulation methods to study phase and domain interfaces. We focus on the recent success of these tools in joint scale-bridging studies to solve long lasting puzzles in the field and give an outlook on recent trends in superlattices.
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Affiliation(s)
- Anna Grünebohm
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Madhura Marathe
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain
- Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
| | - Ruben Khachaturyan
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
| | - Raphael Schiedung
- Interdisciplinary Centre for Advanced Materials Simulations (ICAMS), Ruhr-University Bochum, 44801 Bochum, Germany
- National Institute for Material Science (NIMS), Tsukuba 305-0047, Japan
| | - Doru C Lupascu
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
| | - Vladimir V Shvartsman
- Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 45141 Essen, Germany
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3
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Chen Y, Wei H, Wang M, Cao B. Enhancing the bulk photovoltaic effect by tuning domain walls in epitaxial BiFeO 3films. NANOTECHNOLOGY 2021; 32:495402. [PMID: 34464943 DOI: 10.1088/1361-6528/ac225e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2021] [Accepted: 08/31/2021] [Indexed: 06/13/2023]
Abstract
In this letter, the role of domain wall (DW) on bulk photovoltaic effect (BPV) effect in BiFeO3(BFO) films was studied by x-ray reciprocal space mapping and conductive atomic force microscope. It was found that the domain structure and DW can be tuned by controlling the epitaxial orientation of BFO film. Remarkably, under 1 sun AM 1.5 G illumination, the 109° DW enhances the transport of photogenerated carriers and simultaneously improves the conductivity and power conversion efficiency (PCE). The short-circuit current density and PCE can reach 171.15μA cm-2and 0.1127%, respectively. Therefore, our study reveals the correlation between the DW and the BPV effect in BFO film and provides a new pathway to improve the PCE of BFO-based photovoltaic device.
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Affiliation(s)
- Yang Chen
- School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu, 273165, Shandong, People's Republic of China
| | - Haoming Wei
- School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu, 273165, Shandong, People's Republic of China
| | - Mingxu Wang
- School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu, 273165, Shandong, People's Republic of China
| | - Bingqiang Cao
- School of Material Science and Engineering, Materials Research Center for Energy and Photoelectrochemical Conversion, University of Jinan, Jinan 250022, Shandong, People's Republic of China
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4
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Hu Y, Abdelsamie A, Weng Y, Zheng F, Fang L, You L. Effect of polarization rotation on the optical and photovoltaic properties of BiFeO 3thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:354002. [PMID: 34153953 DOI: 10.1088/1361-648x/ac0d19] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Accepted: 06/21/2021] [Indexed: 06/13/2023]
Abstract
Visible-light-active ferroelectric materials are gaining increasing attention due to the unique ferroelectric photovoltaic effect. To boost the light harvesting capability, vast research is devoted to band gap engineering by chemical substitutions, regardless of the side effect on ferroelectric polarization. Here, we focus on how polar order affects the optical and photovoltaic properties. Using BiFeO3as the model system, we induce the polarization rotation by A-site La substitution, which results in continuous reduction of optical anisotropy of the samples, as revealed by the concerted optical characterizations. This further causes the decrease of angular dependence of ferroelectric photovoltaic effect on the light polarization. The results demonstrate the inner connection of the ferroelectric polarization and optical anisotropy via the lattice degree of freedom.
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Affiliation(s)
- Yiqi Hu
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, People's Republic of China
| | - Amr Abdelsamie
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yuyan Weng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, People's Republic of China
| | - Fengang Zheng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, People's Republic of China
| | - Liang Fang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, People's Republic of China
| | - Lu You
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, People's Republic of China
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5
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Mühlenbein L, Singh CB, Lotnyk A, Himcinschi C, Yun Y, Ramakrishnegowda N, Knoche DS, Li X, Bhatnagar A. Nanocomposites with Three-Dimensional Architecture and Impact on Photovoltaic Effect. NANO LETTERS 2020; 20:8789-8795. [PMID: 33253587 DOI: 10.1021/acs.nanolett.0c03654] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We demonstrate the synthesis of self-assembled three-dimensional nanocomposite thin films consisting of NiO nanocolumns in an layered Aurivillius phase matrix. The structures were grown on single-crystal SrTiO3 substrates via pulsed laser deposition (PLD) with single ceramic (PbTiO3)x(BiNi2/3Nb1/3O3)1-x targets. The nanocolumns, which are about 10 nm in diameter each, extend over the entire film thickness of up to 225 nm. We reveal the difference in electrical conduction properties of the nanocolumns and the surrounding matrix on the nanoscale via conductive atomic force microscopy. The nanocomposite thin films exhibit improved photovoltaic performance compared to both pure PbTiO3 and homogeneous Aurivillius phase thin films.
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Affiliation(s)
- Lutz Mühlenbein
- Zentrum für Innovationskompetenz SiLi-nano, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
- Institute of Physics, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
| | - Chandra Bhal Singh
- Indian Institute of Technology, Banaras Hindu University, Varanasi 221005, India
| | - Andriy Lotnyk
- Leibniz Institute of Surface Engineering, Leipzig 04318, Germany
- Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China
| | - Cameliu Himcinschi
- Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg D-09596, Germany
| | - Yeseul Yun
- Zentrum für Innovationskompetenz SiLi-nano, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
- Institute of Physics, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
| | - Niranjan Ramakrishnegowda
- Zentrum für Innovationskompetenz SiLi-nano, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
- Institute of Physics, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
| | - David S Knoche
- Zentrum für Innovationskompetenz SiLi-nano, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
- Institute of Physics, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
| | - Xinye Li
- Zentrum für Innovationskompetenz SiLi-nano, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
- Institute of Physics, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
| | - Akash Bhatnagar
- Zentrum für Innovationskompetenz SiLi-nano, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
- Institute of Physics, Martin Luther Universität Halle-Wittenberg, Halle (Saale) 06120, Germany
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6
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Nataf GF, Guennou M. Optical studies of ferroelectric and ferroelastic domain walls. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:183001. [PMID: 32026848 DOI: 10.1088/1361-648x/ab68f3] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recent studies carried out with atomic force microscopy or high-resolution transmission electron microscopy reveal that ferroic domain walls can exhibit different physical properties than the bulk of the domains, such as enhanced conductivity in insulators, or polar properties in non-polar materials. In this review we show that optical techniques, in spite of the diffraction limit, also provide key insights into the structure and physical properties of ferroelectric and ferroelastic domain walls. We give an overview of the uses, specificities and limits of these techniques, and emphasize the properties of the domain walls that they can probe. We then highlight some open questions of the physics of domain walls that could benefit from their use.
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Affiliation(s)
- G F Nataf
- Department of Materials Science, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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7
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Nandy S, Kaur K, Gautam S, Chae KH, Nanda BRK, Sudakar C. Maximizing Short Circuit Current Density and Open Circuit Voltage in Oxygen Vacancy-Controlled Bi 1-xCa xFe 1-yTi yO 3-δ Thin-Film Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:14105-14118. [PMID: 32118399 DOI: 10.1021/acsami.9b18357] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Designing solid-state perovskite oxide solar cells with large short circuit current (JSC) and open circuit voltage (VOC) has been a challenging problem. Epitaxial BiFeO3 (BFO) films are known to exhibit large VOC (>50 V). However, they exhibit low JSC (≪μA/cm2) under 1 Sun illumination. In this work, taking polycrystalline BiFeO3 thin films, we demonstrate that oxygen vacancies (VO) present within the lattice and at grain boundary (GB) can explicitly be controlled to achieve high JSC and VOC simultaneously. While aliovalent substitution (Ca2+ at Bi3+ site) is used to control the lattice VO, Ca and Ti cosubstitution is used to bring out only GB-VO. Fluorine-doped tin oxide (FTO)/Bi1-xCaxFe1-yTiyO3-δ/Au devices are tested for photovoltaic characteristics. Introducing VO increases the photocurrent by four orders (JSC ∼ 3 mA/cm2). On the contrary, VOC is found to be <0.5 V, as against 0.5-3 V observed for the pristine BiFeO3. Ca and Ti cosubstitution facilitate the formation of smaller crystallites, which in turn increase the GB area and thereby the GB-VO. This creates defect bands occupying the bulk band gap, as inferred from the diffused reflection spectra and band structure calculations, leading to a three-order increase in JSC. The cosubstitution, following a charge compensation mechanism, decreases the lattice VO concentration significantly to retain the ferroelectric nature with enhanced polarization. It helps to achieve VOC (3-8 V) much larger than that of BiFeO3 (0.5-3 V). It is noteworthy that as Ca substitution maintains moderate crystallite size, the lattice VO concentration dominates GB-VO concentration. Notwithstanding, both lattice and GB-VO contribute to the increase in JSC; the former weakens ferroelectricity, and as a consequence, undesirably, VOC is lowered well below 0.5 V. Using optimum JSC and VOC, we demonstrate that the efficiency ∼0.22% can be achieved in solid-state BFO solar cells under AM 1.5 one Sun illumination.
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Affiliation(s)
- Subhajit Nandy
- Multifunctional Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600 036, India
| | - Kulwinder Kaur
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600 036, India
| | - Sanjeev Gautam
- Advanced Functional Materials Lab, Dr. S. S. Bhatnagar University Institute of Chemical Engineering & Technology, Punjab University, Chandigarh 160014, India
| | - Keun Hwa Chae
- Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - B R K Nanda
- Condensed Matter Theory and Computational Lab, Department of Physics, Indian Institute of Technology Madras, Chennai 600 036, India
| | - Chandran Sudakar
- Multifunctional Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600 036, India
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8
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Functional Ferroic Domain Walls for Nanoelectronics. MATERIALS 2019; 12:ma12182927. [PMID: 31510049 PMCID: PMC6766344 DOI: 10.3390/ma12182927] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Revised: 09/05/2019] [Accepted: 09/06/2019] [Indexed: 11/17/2022]
Abstract
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
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9
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Yang T, Wei J, Guo Y, Lv Z, Xu Z, Cheng Z. Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23372-23381. [PMID: 31252505 DOI: 10.1021/acsami.9b06704] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Very recently, the ferroelectric photovoltaic property of bismuth ferrite (BiFeO3, BFO) has attracted much attention. However, the physical mechanisms for its anomalous photovoltaic effect and switchable photovoltaic effect are still largely unclear. Herein, a novel design was proposed to realize a high photovoltaic output in BiFeO3 films by manipulating its oxygen vacancy concentration through the alteration of the Bi content. Subsequent results and analysis manifested that the highest photovoltaic output was achieved in Bi1.05FeO3 films, differing 1000 times from that of Bi0.95FeO3 films. Simultaneously, the origin of photovoltaic effect in all BiFeO3 films was suggested as the bulk photovoltaic mechanism instead of the Schottky effect. Moreover, oxygen vacancy migration should be the dominant factor determining the switchable photovoltaic effect rather than the ferroelectric polarization. A switchable Schottky-to-Ohmic interfacial contact model was proposed to illustrate the observed switchable photovoltaic or diodelike effect. Therefore, the present work may open a new way to realize the high power output and controllable photovoltaic switching behavior for the photovoltaic applications of BiFeO3 compounds.
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Affiliation(s)
- Tiantian Yang
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Jie Wei
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Yaxin Guo
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Zhibin Lv
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Zhuo Xu
- Electronic Materials Research Laboratory, Key Laboratory of Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials (ISEM) , University of Wollongong , Innovation Campus, Squires Way , North Wollongong , NSW 2500 , Australia
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10
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Yang MM, Iqbal AN, Peters JJP, Sanchez AM, Alexe M. Strain-gradient mediated local conduction in strained bismuth ferrite films. Nat Commun 2019; 10:2791. [PMID: 31243266 PMCID: PMC6594973 DOI: 10.1038/s41467-019-10664-5] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2018] [Accepted: 05/15/2019] [Indexed: 11/27/2022] Open
Abstract
It has been recently shown that the strain gradient is able to separate the light-excited electron-hole pairs in semiconductors, but how it affects the photoelectric properties of the photo-active materials remains an open question. Here, we demonstrate the critical role of the strain gradient in mediating local photoelectric properties in the strained BiFeO3 thin films by systematically characterizing the local conduction with nanometre lateral resolution in both dark and illuminated conditions. Due to the giant strain gradient manifested at the morphotropic phase boundaries, the associated flexo-photovoltaic effect induces on one side an enhanced photoconduction in the R-phase, and on the other side a negative photoconductivity in the morphotropic \documentclass[12pt]{minimal}
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\begin{document}$$T\prime$$\end{document}T′-phase. This work offers insight and implication of the strain gradient on the electronic properties in both optoelectronic and photovoltaic devices. In semiconductors strain gradients can separate light induced electron-hole pairs via the flexo-photovoltaic effect. Here the authors show that this effect can also account for the enhancement of the photoconduction in certain phase regions at the morphotropic phase boundary in Bismuth Ferrite films.
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Affiliation(s)
- Ming-Min Yang
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK.
| | - Affan N Iqbal
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK
| | | | - Ana M Sanchez
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK
| | - Marin Alexe
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK.
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11
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Bai Y, Jantunen H, Juuti J. Ferroelectric Oxides for Solar Energy Conversion, Multi-Source Energy Harvesting/Sensing, and Opto-Ferroelectric Applications. CHEMSUSCHEM 2019; 12:2540-2549. [PMID: 31033177 PMCID: PMC6617779 DOI: 10.1002/cssc.201900671] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2019] [Revised: 04/23/2019] [Indexed: 06/09/2023]
Abstract
Photoferroelectrics belong to a unique material family that exhibits both photovoltaic and ferroelectric effects simultaneously. The photovoltaic effect is the only known direct method of converting light into electricity and is the basis of solar cells. The ferroelectric effect can induce piezoelectric and pyroelectric effects, which are the working principles of widely used kinetic and thermal sensors, transducers, actuators, and energy harvesters. For a long time, photoferroelectric research was restricted to theoretical investigations only because of either the wide band gap (Eg ), which is not able to effectively absorb visible light, or to the weak ferroelectricity caused by a narrow Eg . Recent scientific breakthroughs, however, have opened doors for the development of practical applications. In this article, emerging concepts of creating balanced photovoltaic and ferroelectric properties for photoferroelectrics, as well as those of novel applications in future devices, are presented.
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Affiliation(s)
- Yang Bai
- Microelectronics Research UnitFaculty of Information Technology and Electrical EngineeringUniversity of Oulu90014OuluFinland
| | - Heli Jantunen
- Microelectronics Research UnitFaculty of Information Technology and Electrical EngineeringUniversity of Oulu90014OuluFinland
| | - Jari Juuti
- Microelectronics Research UnitFaculty of Information Technology and Electrical EngineeringUniversity of Oulu90014OuluFinland
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12
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Gruverman A, Alexe M, Meier D. Piezoresponse force microscopy and nanoferroic phenomena. Nat Commun 2019; 10:1661. [PMID: 30971688 PMCID: PMC6458164 DOI: 10.1038/s41467-019-09650-8] [Citation(s) in RCA: 119] [Impact Index Per Article: 23.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2017] [Accepted: 03/05/2019] [Indexed: 11/23/2022] Open
Abstract
Since its inception more than 25 years ago, Piezoresponse Force Microscopy (PFM) has become one of the mainstream techniques in the field of nanoferroic materials. This review describes the evolution of PFM from an imaging technique to a set of advanced methods, which have played a critical role in launching new areas of ferroic research, such as multiferroic devices and domain wall nanoelectronics. The paper reviews the impact of advanced PFM modes concerning the discovery and scientific understanding of novel nanoferroic phenomena and discusses challenges associated with the correct interpretation of PFM data. In conclusion, it offers an outlook for future trends and developments in PFM.
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Affiliation(s)
- Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA.
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Dennis Meier
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), N-7034, Trondheim, Norway
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13
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Nadupalli S, Kreisel J, Granzow T. Increasing bulk photovoltaic current by strain tuning. SCIENCE ADVANCES 2019; 5:eaau9199. [PMID: 30838328 PMCID: PMC6397022 DOI: 10.1126/sciadv.aau9199] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2018] [Accepted: 01/23/2019] [Indexed: 05/20/2023]
Abstract
Photovoltaic phenomena are widely exploited not only for primary energy generation but also in photocatalytic, photoelectrochemistry, or optoelectronic applications. In contrast to the interface-based photovoltaic effect of semiconductors, the anomalous or bulk photovoltaic effect in ferroelectrics is not bound by the Shockley-Queisser limit and, thus, can potentially reach high efficiencies. Here, we observe in the example of an Fe-doped LiNbO3 bulk single crystal the existence of a purely intrinsic "piezophotovoltaic" effect that leads to a linear increase in photovoltaic current density. The increase reaches 75% under a low uniaxial compressive stress of 10 MPa, corresponding to a strain of only 0.005%. The physical origin and symmetry properties of the effect are investigated, and its potential for strain-tuned efficiency increase in nonconventional photovoltaic materials is presented.
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Affiliation(s)
- Shankari Nadupalli
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
| | - Jens Kreisel
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
- Physics and Materials Science Research Unit, University of Luxembourg, 41 Rue du Brill, 4422 Belvaux, Luxembourg
| | - Torsten Granzow
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, L-4422 Belvaux, Luxembourg
- Corresponding author.
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Ferroelastic domain identification in BiFeO 3 crystals using Raman spectroscopy. Sci Rep 2019; 9:379. [PMID: 30674911 PMCID: PMC6344528 DOI: 10.1038/s41598-018-36462-5] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2018] [Accepted: 11/23/2018] [Indexed: 12/02/2022] Open
Abstract
Multiferroic BiFeO3 crystals were investigated by means of micro-Raman spectroscopy using the laser wavelengths of 442 nm (resonant conditions) and 633 nm (non-resonant conditions). The azimuthal angle dependence of the intensity of the Raman modes allowed their symmetry assignment. The experimental data are consistent with a simulation based on Raman tensor formalism. Mixed symmetries were taken into account, considering the orientation of the crystal optic axis along a pseudo-cubic <111> direction. The strong anisotropic intensity variation of some of the polar Raman modes was used for line scans and mappings in order to identify ferroelastic domain patterns. The line scans performed with different excitation wavelengths and hence different information depths indicate a tilt of the domain walls with respect to the sample surface. The domain distribution found by Raman spectroscopy is in very good agreement with the finding of electron back scattering diffraction.
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15
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Feng Y, Tang Y, Ma D, Zhu Y, Zou M, Han M, Ma J, Ma X. Thickness-Dependent Evolution of Piezoresponses and Stripe 90° Domains in (101)-Oriented Ferroelectric PbTiO 3 Thin Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:24627-24637. [PMID: 29969007 DOI: 10.1021/acsami.8b07206] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High-index ferroelectric films as (101)-orientated ones exhibit enhanced dielectric responses, piezoelectric responses, and exotic ferroelectric switching behaviors, which are potential candidates for applications in memories and capacitors. However, possible domain patterns and domain wall structures in (101)-oriented ferroelectric thin films are still elusive, which results in difficulties in understanding the origin and further modulating their special properties. In this work, a series of PbTiO3 (PTO) thin films with 35, 50, 60, and 70 nm in thickness were grown on (101)-oriented (LaAlO3)0.29(SrTa1/2Al1/2O3)0.71 (LSAT(101)) substrates by pulsed laser deposition and investigated by both piezoresponse force microscopy (PFM) and (scanning) transmission electron microscopy ((S)TEM). PFM measurements reveal that periodic stripe domains are dominant in 50 nm thick PTO films. Besides stripe domains, a/ c domains appear in films with thickness more than 60 nm. A thickness-dependent evolution of piezoresponse amplitude indicates that the 50 nm thick PTO films demonstrate a superior piezoresponse. Electron diffraction and contrast analysis clarify that all these (101)-oriented PTO films contain periodic stripe ferroelectric 90° domains. The domain periods increase with the film thickness following Kittel's law. Aberration-corrected STEM imaging reveals that the stripe ferroelectric 90° domains have an alternate arrangement of wide and narrow c domains with polarization directions along [100] for c1 domains and [001̅] for c2 domains, forming a "head-to-tail" polarization configuration. Further strain analysis reveals that stripe domains have uniform strain distributions and distinct lattice rotations around domain walls. It is proposed that the periodic arrangement of high-density stripe 90° domains in 50 nm thick PTO films is the main contributor to the superior piezoresponse behavior. These results are expected to provide useful information to understand the domain structures in (101)-oriented PTO thin films and thus facilitate further modulation of the properties for potential applications.
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Affiliation(s)
- Yanpeng Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Wenhua Road 72 , 110016 Shenyang , China
- University of Chinese Academy of Sciences , Yuquan Road 19 , 100049 Beijing , China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Wenhua Road 72 , 110016 Shenyang , China
| | - Desheng Ma
- School of Physics , Nankai University , Weijin Road 94 , 300071 Tianjin , China
| | - Yinlian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Wenhua Road 72 , 110016 Shenyang , China
| | - Minjie Zou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Wenhua Road 72 , 110016 Shenyang , China
- School of Material Science and Engineering , University of Science and Technology of China , 230026 Hefei , China
| | - Mengjiao Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Wenhua Road 72 , 110016 Shenyang , China
- University of Chinese Academy of Sciences , Yuquan Road 19 , 100049 Beijing , China
| | - Jinyuan Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Wenhua Road 72 , 110016 Shenyang , China
- School of Materials Sciences and Engineering , Lanzhou University of Technology , Langongping Road 287 , 730050 Lanzhou , China
| | - Xiuliang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research , Chinese Academy of Sciences , Wenhua Road 72 , 110016 Shenyang , China
- School of Materials Sciences and Engineering , Lanzhou University of Technology , Langongping Road 287 , 730050 Lanzhou , China
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Zhang Y, Jie W, Chen P, Liu W, Hao J. Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707007. [PMID: 29888451 DOI: 10.1002/adma.201707007] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2017] [Revised: 02/05/2018] [Indexed: 05/12/2023]
Abstract
Piezoelectric and ferroelectric materials have shown great potential for control of the optical process in emerging materials. There are three ways for them to impact on the optical process in various materials. They can act as external perturbations, such as ferroelectric gating and piezoelectric strain, to tune the optical properties of the materials and devices. Second, ferroelectricity and piezoelectricity as innate attributes may exist in some optoelectronic materials, which can couple with other functional features (e.g., semiconductor transport, photoexcitation, and photovoltaics) in the materials giving rise to unprecedented device characteristics. The last way is artificially introducing optical functionalities into ferroelectric and piezoelectric materials and devices, which provides an opportunity for investigating the intriguing interplay between the parameters (e.g., electric field, temperature, and strain) and the introduced optical properties. Here, the tuning strategies, fundamental mechanisms, and recent progress in ferroelectric and piezoelectric effects modulating the optical properties of a wide spectrum of materials, including lanthanide-doped phosphors, quantum dots, 2D materials, wurtzite-type semiconductors, and hybrid perovskites, are presented. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Yang Zhang
- Institute of Modern Optics, Nankai University, Tianjin, 300071, China
| | - Wenjing Jie
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610068, China
| | - Ping Chen
- Institute of Modern Optics, Nankai University, Tianjin, 300071, China
| | - Weiwei Liu
- Institute of Modern Optics, Nankai University, Tianjin, 300071, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
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17
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Bai Y, Jantunen H, Juuti J. Energy Harvesting Research: The Road from Single Source to Multisource. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707271. [PMID: 29877037 DOI: 10.1002/adma.201707271] [Citation(s) in RCA: 54] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2017] [Revised: 02/03/2018] [Indexed: 06/08/2023]
Abstract
Energy harvesting technology may be considered an ultimate solution to replace batteries and provide a long-term power supply for wireless sensor networks. Looking back into its research history, individual energy harvesters for the conversion of single energy sources into electricity are developed first, followed by hybrid counterparts designed for use with multiple energy sources. Very recently, the concept of a truly multisource energy harvester built from only a single piece of material as the energy conversion component is proposed. This review, from the aspect of materials and device configurations, explains in detail a wide scope to give an overview of energy harvesting research. It covers single-source devices including solar, thermal, kinetic and other types of energy harvesters, hybrid energy harvesting configurations for both single and multiple energy sources and single material, and multisource energy harvesters. It also includes the energy conversion principles of photovoltaic, electromagnetic, piezoelectric, triboelectric, electrostatic, electrostrictive, thermoelectric, pyroelectric, magnetostrictive, and dielectric devices. This is one of the most comprehensive reviews conducted to date, focusing on the entire energy harvesting research scene and providing a guide to seeking deeper and more specific research references and resources from every corner of the scientific community.
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Affiliation(s)
- Yang Bai
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, FI-90014, Finland
| | - Heli Jantunen
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, FI-90014, Finland
| | - Jari Juuti
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, FI-90014, Finland
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18
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Yang MM, Kim DJ, Alexe M. Flexo-photovoltaic effect. Science 2018; 360:904-907. [DOI: 10.1126/science.aan3256] [Citation(s) in RCA: 171] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2017] [Accepted: 04/06/2018] [Indexed: 01/24/2023]
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19
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Yang MM, Alexe M. Light-Induced Reversible Control of Ferroelectric Polarization in BiFeO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1704908. [PMID: 29457305 DOI: 10.1002/adma.201704908] [Citation(s) in RCA: 59] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2017] [Revised: 12/22/2017] [Indexed: 06/08/2023]
Abstract
Manipulation of ferroic order parameters, namely (anti-)ferromagnetic, ferroelectric, and ferroelastic, by light at room temperature is a fascinating topic in modern solid-state physics due to potential cross-fertilization in research fields that are largely decoupled. Here, full optical control, that is, reversible switching, of the ferroelectric/ferroelastic domains in BiFeO3 thin films at room temperature by the mediation of the tip-enhanced photovoltaic effect is demonstrated. The enhanced short-circuit photocurrent density at the tip contact area generates a local electric field well exceeding the coercive field, enabling ferroelectric polarization switching. Interestingly, by tailoring the photocurrent direction, via either tuning the illumination geometry or simply rotating the light polarization, full control of the ferroelectric polarization is achieved. The finding offers a new insight into the interactions between light and ferroic orders, enabling fully optical control of all the ferroic orders at room temperature and providing guidance to design novel optoferroic devices for data storage and sensing.
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Affiliation(s)
- Ming-Min Yang
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK
| | - Marin Alexe
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK
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20
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Shirolkar MM, Li J, Dong X, Li M, Wang H. Controlling the ferroelectric and resistive switching properties of a BiFeO 3 thin film prepared using sub-5 nm dimension nanoparticles. Phys Chem Chem Phys 2018; 19:26085-26097. [PMID: 28926034 DOI: 10.1039/c7cp04341d] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
In recent years, BiFeO3 has attracted significant attention as an interesting multiferroic material in the exploration of fundamental science and development of novel applications. Our previous study (Phys. Chem. Chem. Phys.18, 2016, 25409) highlighted the interesting physicochemical features of BiFeO3 of sub-5 nm dimension. The study also accentuated the existence of weak ferroelectricity at sub-5 nm dimensions in BiFeO3. Based on this feature, we have prepared thin films using sub-5 nm BiFeO3 nanoparticles and explored various physicochemical properties of the thin film. We report that during the formation of the thin film, the nanoparticles aggregated; particularly, annihilation of their nanotwinning nature was observed. Qualitatively, the Gibbs free energy change ΔG governed the abovementioned processes. The thin film exhibited an R3c phase and enhanced Bi-O-Fe coordination as compared to the sub-5 nm nanoparticles. Raman spectroscopy under the influence of a magnetic field shows a magnetoelectric effect, spin phonon coupling, and magnetic anisotropy. We report room-temperature ferroelectric behavior in the thin film, which enhances with the application of a magnetic field; this confirms the multiferroic nature of the thin film. The thin film shows polarization switching ability at multiple voltages and read-write operation at low bias (±0.5 V). Furthermore, the thin film shows negative differential-complementary resistive switching behavior in the nano-microampere current range. We report nearly stable 1-bit operation for 102 cycles, 105 voltage pulses, and 105 s, demonstrating the paradigm device applications. The observed results thus show that the thin films prepared using sub-5 nm BiFeO3 nanoparticles are a promising candidate for future spintronics and memory applications. The reported approach can also be pertinent to explore the physicochemical properties and develop potential applications of several other nanoparticles.
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Affiliation(s)
- Mandar M Shirolkar
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
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Liu S, Cohen RE. Stable charged antiparallel domain walls in hyperferroelectrics. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:244003. [PMID: 28443824 DOI: 10.1088/1361-648x/aa6f95] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Charge-neutral 180° domain walls that separate domains of antiparallel polarization directions are common structural topological defects in ferroelectrics. In normal ferroelectrics, charged 180° domain walls running perpendicular to the polarization directions are highly energetically unfavorable because of the depolarization field and are difficult to stabilize. We explore both neutral and charged 180° domain walls in hyperferroelectrics, a class of proper ferroelectrics with persistent polarization in the presence of a depolarization field, using density functional theory. We obtain zero temperature equilibrium structures of head-to-head and tail-to-tail walls in recently discovered ABC-type hexagonal hyperferroelectrics. Charged domain walls can also be stabilized in canonical ferroelectrics represented by LiNbO3 without any dopants, defects or mechanical clamping. First-principles electronic structure calculations show that charged domain walls can reduce and even close the band gap of host materials and support quasi-two-dimensional electron(hole) gas with enhanced electrical conductivity.
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Affiliation(s)
- S Liu
- Extreme Materials Initiative, Geophysical Laboratory, Carnegie Institution for Science, Washington, DC 20015-1305, United States of America
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