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Xu Z, Sun C, Min S, Ye Z, Zhao C, Li J, Liu Z, Liu Y, Li WD, Tang MC, Song Q, Fu HY, Kang F, Li J, Shen Y, Yu C, Wei G. Si/Organic Integrated Narrowband Near-Infrared Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302072. [PMID: 37431202 DOI: 10.1002/smll.202302072] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Revised: 06/26/2023] [Indexed: 07/12/2023]
Abstract
Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.
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Affiliation(s)
- Zhuhua Xu
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Chuying Sun
- Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077, China
| | - Siyi Min
- Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077, China
| | - Zilong Ye
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Cong Zhao
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Jingzhou Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Zhenghao Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Youdi Liu
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
| | - Wen-Di Li
- Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077, China
| | - Man-Chung Tang
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Qinghua Song
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - H Y Fu
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
| | - Feiyu Kang
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Jiangyu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yang Shen
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Cunjiang Yu
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
- Department of Biomedical Engineering, Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
| | - Guodan Wei
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
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Wang F, Yuan J, Yang S, Potapov AA, Zhang X, Liang Z, Feng T. Compact ring resonators of silicon nanorods for strong optomechanical interaction. NANOSCALE 2023; 15:4982-4990. [PMID: 36786450 DOI: 10.1039/d2nr06449a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Optomechanical interaction in microstructures plays a more and more important role in the fields of quantum technology, information processing, and sensing, among others. It is still a challenge to obtain a strong optomechanical interaction in a compact device. Here, we propose and demonstrate that compact ring resonators consisting of silicon nanorods can realize strong optomechanical interaction even surpassing that of most optical microcavities. The proposed ring resonators can well confine infrared optical waves by the quasi-bound states in the continuum. Meanwhile, each nanorod in the resonator acts as a mechanical resonator of GHz resonating frequency, thus realizing an optomechanical coupling rate of up to 1.8 MHz. We have found that the interaction area can be extended by increasing the number of nanorods while maintaining the optomechanical interaction strength. Finally, we have studied the influence of supporting structures for suspended nanorods on the optomechanical interaction properties. The proposed ring resonators of silicon nanorods offer a promising platform for the study of optomechanical interaction.
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Affiliation(s)
- Fugen Wang
- Department of Electronic Engineering, College of Information Science and Technology, Jinan University, Guangzhou 510632, China.
| | - Jin Yuan
- Department of Electronic Engineering, College of Information Science and Technology, Jinan University, Guangzhou 510632, China.
| | - Shuaifeng Yang
- Department of Electronic Engineering, College of Information Science and Technology, Jinan University, Guangzhou 510632, China.
| | - Alexander A Potapov
- Department of Electronic Engineering, College of Information Science and Technology, Jinan University, Guangzhou 510632, China.
| | - Xin Zhang
- Joint Laboratory of Digital Optical Chip, Wuyi University, Jiangmen 529020, China
| | - Zixian Liang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Tianhua Feng
- Department of Electronic Engineering, College of Information Science and Technology, Jinan University, Guangzhou 510632, China.
- Joint Laboratory of Digital Optical Chip, Wuyi University, Jiangmen 529020, China
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Yang S, Wan L, Wang F, Potapov AA, Feng T. Strong optomechanical coupling in chain-like waveguides of silicon nanoparticles with quasi-bound states in the continuum. OPTICS LETTERS 2021; 46:4466-4469. [PMID: 34525023 DOI: 10.1364/ol.436316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Accepted: 08/12/2021] [Indexed: 06/13/2023]
Abstract
We propose and demonstrate that strong optomechanical coupling can be achieved in a chain-like waveguide consisting of silicon nanorods. By employing quasi-bound states in the continuum and mechanical resonances at a frequency around 10 GHz, the optomechanical coupling rate can be above 2 MHz and surpass most microcavities. We have also studied cases with different optical wave numbers and size parameters of silicon, and a robust coupling rate has been verified, benefiting the experimental measurements and practical applications. The proposed silicon chain-like waveguide of strong optomechanical coupling may pave new ways for research on photon-phonon interaction with microstructures.
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Zurita RO, Wiederhecker GS, Mayer Alegre TP. Designing of strongly confined short-wave Brillouin phonons in silicon waveguide periodic lattices. OPTICS EXPRESS 2021; 29:1736-1748. [PMID: 33726381 DOI: 10.1364/oe.413770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 12/23/2020] [Indexed: 06/12/2023]
Abstract
We propose a feasible waveguide design optimized for harnessing Stimulated Brillouin Scattering with long-lived phonons. The design consists of a fully suspended ridge waveguide surrounded by a 1D phononic crystal that mitigates losses to the substrate while providing the needed homogeneity for the build-up of the optomechanical interaction. The coupling factor of these structures was calculated to be GB/Qm = 0.54 (W m)-1 for intramodal backward Brillouin scattering with its fundamental TE-like mode and GB/Qm = 4.5 (W m)-1 for intramodal forward Brillouin scattering. The addition of the phononic crystal provides a 30 dB attenuation of the mechanical displacement after only five unitary cells, possibly leading to a regime where the acoustic losses are only limited by fabrication. As a result, the total Brillouin gain, which is proportional to the product of the coupling and acoustic quality factors, is nominally equal to the idealized fully suspended waveguide.
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Shi B, Luo C, Flor Flores JG, Lo G, Kwong DL, Wu J, Wong CW. Gbps physical random bit generation based on the mesoscopic chaos of a silicon photonics crystal microcavity. OPTICS EXPRESS 2020; 28:36685-36695. [PMID: 33379757 DOI: 10.1364/oe.404923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2020] [Accepted: 10/26/2020] [Indexed: 06/12/2023]
Abstract
We present an experimental and theoretical physical random bit (PRB) generator using the mesoscopic chaos from a photonic-crystal optomechanical microcavity with a size of ∼10µm and very low operating intracavity energy of ∼60 Femto-Joule that was fabricated with CMOS compatible processes. Moreover, two kinds of PRB generation were proposed with rates over gigabits per second (Gbps). The randomness of the large PRB strings was further verified using the NIST Special Publication 800-22. In addition, the Diehard statistical test was also used to confirm the quality of the obtained PRBs. The results of this study can offer a new generation of dedicated PRB solutions that can be integrated on Si substrates, which can speed up systems and eliminate reliance on external mechanisms for randomness collection.
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Otterstrom NT, Behunin RO, Kittlaus EA, Wang Z, Rakich PT. A silicon Brillouin laser. Science 2018; 360:1113-1116. [DOI: 10.1126/science.aar6113] [Citation(s) in RCA: 139] [Impact Index Per Article: 23.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2017] [Revised: 02/03/2018] [Accepted: 04/16/2018] [Indexed: 11/02/2022]
Abstract
Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.
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Gonzalez-Henao JC, Pugliese E, Euzzor S, Meucci R, Roversi JA, Arecchi FT. Control of entanglement dynamics in a system of three coupled quantum oscillators. Sci Rep 2017; 7:9957. [PMID: 28855667 PMCID: PMC5577133 DOI: 10.1038/s41598-017-09989-2] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2017] [Accepted: 08/01/2017] [Indexed: 11/17/2022] Open
Abstract
Dynamical control of entanglement and its connection with the classical concept of instability is an intriguing matter which deserves accurate investigation for its important role in information processing, cryptography and quantum computing. Here we consider a tripartite quantum system made of three coupled quantum parametric oscillators in equilibrium with a common heat bath. The introduced parametrization consists of a pulse train with adjustable amplitude and duty cycle representing a more general case for the perturbation. From the experimental observation of the instability in the classical system we are able to predict the parameter values for which the entangled states exist. A different amount of entanglement and different onset times emerge when comparing two and three quantum oscillators. The system and the parametrization considered here open new perspectives for manipulating quantum features at high temperatures.
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Affiliation(s)
- J C Gonzalez-Henao
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, Unicamp, 13083-970, Campinas, São Paulo, Brazil.,Departamento de Física, Universidad de Sucre, Cra 28 No 5-267 Puerta Roja, Sincelejo, Sucre, Colombia
| | - E Pugliese
- Istituto Nazionale di Ottica-CNR Largo E. Fermi 6, 50125, Firenze, Italy.
| | - S Euzzor
- Istituto Nazionale di Ottica-CNR Largo E. Fermi 6, 50125, Firenze, Italy
| | - R Meucci
- Istituto Nazionale di Ottica-CNR Largo E. Fermi 6, 50125, Firenze, Italy
| | - J A Roversi
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, Unicamp, 13083-970, Campinas, São Paulo, Brazil
| | - F T Arecchi
- Istituto Nazionale di Ottica-CNR Largo E. Fermi 6, 50125, Firenze, Italy.,Emeritus of Physics, Università degli Studi di Firenze, Firenze, Italy
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