Si/Organic Integrated Narrowband Near-Infrared Photodetector

Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.

Low-Bandgap Organic Bulk-Heterojunction Enabled Efficient and Flexible Perovskite Solar Cells

Lead halide perovskite and organic solar cells (PSCs and OSCs) are considered as the prime candidates currently for clean energy applications due to their solution and low-temperature processibility. Nevertheless, the substantial photon loss in near-infrared (NIR) region and relatively large photovoltage deficit need to be improved to enable their uses in high-performance solar cells. To mitigate these disadvantages, low-bandgap organic bulk-heterojunction (BHJ) layer into inverted PSCs to construct facile hybrid solar cells (HSCs) is integrated. By optimizing the BHJ components, an excellent power conversion efficiency (PCE) of 23.80%, with a decent open-circuit voltage (V_oc ) of 1.146 V and extended photoresponse over 950 nm for rigid HSCs is achieved. The resultant devices also exhibit superior long-term (over 1000 h) ambient- and photostability compared to those from single-component PSCs and OSCs. More importantly, a champion PCE of 21.73% and excellent mechanical durability can also be achieved in flexible HSCs, which is the highest efficiency reported for flexible solar cells to date. Taking advantage of these impressive device performances, flexible HSCs into a power source for wearable sensors to demonstrate real-time temperature monitoring are successfully integrated.

Flexible and Highly Photosensitive Electrolyte-Gated Organic Transistors with Ionogel/Silver Nanowire Membranes

Flexible and low-voltage photosensors with high near-infrared (NIR) sensitivity are critical for realization of interacting humans with robots and environments by thermal imaging or night vision techniques. In this work, we for the first time develop an easy and cost-effective process to fabricate flexible and ultrathin electrolyte-gated organic phototransistors (EGOPTs) with high transparent nanocomposite membranes of high-conductivity silver nanowire (AgNW) networks and large-capacitance iontronic films. A high responsivity of 1.5 × 10³ A·W^1-, high sensitivity of 7.5 × 10⁵, and 3 dB bandwidth of ∼100 Hz can be achieved at very low operational voltages. Experimental studies in temporal photoresponse characteristics reveal the device has a shorter photoresponse time at lower light intensity since strong interactions between photoexcited hole carriers and anions induce extra long-lived trap states. The devices, benefiting from fast and air-stable operations, provide the possibility of the organic photosensors for constructing cost-effective and smart optoelectronic systems in the future.

Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes

Bulk heterojunction photodiodes are fabricated using a new donor-acceptor polymer with a near-infrared absorption edge at 1.2 μm, achieving a detectivity up to 10¹² Jones at a wavelength of 1 μm and an excellent linear dynamic range of 86 dB. The photodiode detectivity is maximized by operating at zero bias to suppress dark current, while a thin 175 nm active layer is used to facilitate charge collection without reverse bias. Analysis of the temperature dependence of the dark current and spectral response demonstrates a 2.8-fold increase in detectivity as the temperature was lowered from 44 to -12 °C, a relatively small change when compared to that of inorganic-based devices. The near-infrared photodiode shows a switching speed reaching up to 120 μs without an external bias. An application using our NIR photodiode to detect arterial pulses of a fingertip is demonstrated.