Superconductivity in HfTe5 across weak to strong topological insulator transition induced via pressures

Two step I to II type transitions in layered Weyl semi-metals and their impact on superconductivity

Novel "quasi two dimensional" typically layered (semi) metals offer a unique opportunity to control the density and even the topology of the electronic matter. Along with doping and gate voltage, a robust tuning is achieved by application of the hydrostatic pressure. In Weyl semi-metals the tilt of the dispersion relation cones, [Formula: see text] increases with pressure, so that one is able to reach type II ([Formula: see text]starting from the more conventional type I Weyl semi-metals [Formula: see text]. The microscopic theory of such a transition is constructed. It is found that upon increasing pressure the I to II transition occurs in two continuous steps. In the first step the cones of opposite chirality coalesce so that the chiral symmetry is restored, while the second transition to the Fermi surface extending throughout the Brillouin zone occurs at higher pressures. Flattening of the band leads to profound changes in Coulomb screening. Superconductivity observed recently in wide range of pressure and chemical composition in Weyl semi-metals of both types. The phonon theory of pairing including the Coulomb repulsion for a layered material is constructed and applied to recent extensive experiments on [Formula: see text].

Pressure-Induced Superconductivity in HgTe Single-Crystal Film

HgTe film is widely used for quantum Hall well studies and devices, as it has unique properties, like band gap inversion, carrier-type switch, and topological evolution depending on the film thickness modulation near the so-called critical thickness (63.5 Å), while its counterpart bulk materials do not hold these nontrivial properties at ambient pressure. Here, much richer transport properties emerging in bulk HgTe crystal through pressure-tuning are reported. Not only the above-mentioned abnormal properties can be realized in a 400 nm thick bulk HgTe single crystal, but superconductivity is also discovered in a series of high-pressure phases. Combining crystal structure, electrical transport, and Hall coefficient measurements, a p-n carrier type switching is observed in the first high-pressure cinnabar phase. Superconductivity emerges after the semiconductor-to-metal transition at 3.9 GPa and persists up to 54 GPa, crossing four high-pressure phases with an increased upper critical field. Density functional theory calculations confirm that a surface-dominated topologic band structure contributes these exotic properties under high pressure. This discovery presents broad and efficient tuning effects by pressure on the lattice structure and electronic modulations compared to the thickness-dependent critical properties in 2D and 3D topologic insulators and semimetals.

Correlated oxide Dirac semimetal in the extreme quantum limit

Quantum materials (QMs) with strong correlation and nontrivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Here, we report that strain-induced symmetry modification in correlated oxide SrNbO₃ thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO₃ films reveal ultrahigh mobility (μ_max ≈ 100,000 cm²/Vs), exceptionally small effective mass (m* ~ 0.04m_e), and nonzero Berry phase. Strained SrNbO₃ films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO₃ is a rare example of correlated oxide Dirac semimetals, in which strong correlation of Dirac electrons leads to the realization of a novel correlated topological QM.

Log-periodic quantum magneto-oscillations and discrete-scale invariance in topological material HfTe5

Discrete-scale invariance (DSI) is a phenomenon featuring intriguing log-periodicity that can be rarely observed in quantum systems. Here, we report the log-periodic quantum oscillations in the longitudinal magnetoresistivity (ρxx ) and the Hall traces (ρyx ) of HfTe5 crystals, which reveal the DSI in the transport-coefficients matrix. The oscillations in ρxx and ρyx show the consistent logB-periodicity with a phase shift. The finding of the logB oscillations in the Hall resistance supports the physical mechanism as a general quantum effect originating from the resonant scattering. Combined with theoretical simulations, we further clarify the origin of the log-periodic oscillations and the DSI in the topological materials. This work evidences the universality of the DSI in the Dirac materials and provides indispensable information for a full understanding of this novel phenomenon.

Fermi level tuning of Ag-doped Bi2Se3 topological insulator

The temperature dependence of the resistivity (ρ) of Ag-doped Bi₂Se₃ (Ag_xBi_2−xSe₃) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi₂Se₃ at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi₂Se₃ can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag_xBi_2−xSe₃ and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag_xBi_2−xSe₃ provides metallic behavior that is similar to that of non-doped Bi₂Se₃, indicating a successful upward tuning of the Fermi level.

The Property, Preparation and Application of Topological Insulators: A Review

Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI.