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Yin Y, Zeng S, Xiao C, Fan P, Shin DJ, Kim KJ, Nam H, Ma Q, Ma H, Zhu W, Kim T, Lee JY, Wang Y. Hybridized local and charge transfer dendrimers with near-unity exciton utilization for enabling high-efficiency solution-processed hyperfluorescent OLEDs. MATERIALS HORIZONS 2024; 11:1741-1751. [PMID: 38288665 DOI: 10.1039/d3mh01860a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Achieving both high emission efficiency and exciton utilization efficiency (ηS) in hot exciton materials is still a formidable task. Herein, a proof-of-concept design for improving ηS in hot exciton materials is proposed via elaborate regulation of singlet-triplet energy difference, leading to an additional thermally activated delayed fluorescence (TADF) process. Two novel dendrimers, named D-TTT-H and D-TTT-tBu, were prepared and characterized, in which diphenylamine derivatives were used as a donor moiety and tri(triazolo)triazine (TTT) as an acceptor fragment. Compounds D-TTT-H and D-TTT-tBu showed an intense green color with an emission efficiency of approximately 80% in solution. Impressively, both dendrimers simultaneously exhibited a hot exciton process and TADF characteristic in the solid state, as was demonstrated via theoretical calculation, transient photoluminescence, magneto-electroluminescence and transient electroluminescence measurements, thus achieving almost unity ηS. A solution processable organic light-emitting diode (OLED) employing the dendrimer as a dopant represents the best performance with the highest luminance of 15090 cd m-2 and a maximum external quantum efficiency (EQEmax) of 11.96%. Moreover, using D-TTT-H as a sensitizer, an EQEmax of 30.88%, 24.08% and 14.33% were achieved for green, orange and red solution-processed OLEDs, respectively. This research paves a new avenue to construct a fluorescent molecule with high ηS for efficient and stable OLEDs.
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Affiliation(s)
- Yixiao Yin
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications, School of Materials Science & Engineering, Changzhou University, Changzhou 213164, China.
| | - Songkun Zeng
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications, School of Materials Science & Engineering, Changzhou University, Changzhou 213164, China.
| | - Chen Xiao
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications, School of Materials Science & Engineering, Changzhou University, Changzhou 213164, China.
| | - Peng Fan
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications, School of Materials Science & Engineering, Changzhou University, Changzhou 213164, China.
| | - Dong Jin Shin
- School of Chemical Engineering, Sungkyunkwan University 2066, Seobu-ro, Jangan-gu, Gyeonggi, Suwon 14169, Korea.
| | - Ki Ju Kim
- Department of Information Display, Hongik University, 04066, Seoul, Korea
| | - Hyewon Nam
- Department of Information Display, Hongik University, 04066, Seoul, Korea
| | - Qian Ma
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Huili Ma
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Weiguo Zhu
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications, School of Materials Science & Engineering, Changzhou University, Changzhou 213164, China.
| | - Taekyung Kim
- Department of Information Display, Hongik University, 04066, Seoul, Korea
- Department of Materials Science and Engineering, Hongik University, Sejong, 30016, Korea.
| | - Jun Yeob Lee
- School of Chemical Engineering, Sungkyunkwan University 2066, Seobu-ro, Jangan-gu, Gyeonggi, Suwon 14169, Korea.
- SKKU Institute of Energy Science and Technology, Sungkyunkwan University 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi, 16419, Korea
| | - Yafei Wang
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications, School of Materials Science & Engineering, Changzhou University, Changzhou 213164, China.
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Li W, Bao X, Wang C, Yao Y, Song J, Peng K, Xu S, Chen L, Guan Y, Niu L. Exploring charge generation and separation in tandem organic light-emitting diodes based on magneto-electroluminescence. NANOTECHNOLOGY 2024; 35:175203. [PMID: 38150721 DOI: 10.1088/1361-6528/ad18e4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2023] [Accepted: 12/27/2023] [Indexed: 12/29/2023]
Abstract
5,6,11,12-tetraphenylnaphthacene (rubrene) exhibits resonant energy properties (ES1,rub≈ 2ET1,rub), resulting in rubrene-based organic light-emitting diode (OLED) devices that undergo the singlet fission (STT) process at room temperature. This unique process gives rise to a distinct magneto-electroluminescence (MEL) profile, differing significantly from the typical intersystem crossing (ISC) process. Therefore, in this paper, we investigate charge generation and separation in the interconnector, and the mechanism of charge transport in tandem OLEDs at room temperature using MEL tools. We fabricate tandem OLEDs comprising green (Alq3) and yellow (Alq3:rubrene) electroluminescence (EL) units using different interconnectors. The results demonstrate that all devices exhibited significant rubrene emission. However, the MEL did not exhibit an STT process with an increasing magnetic field, but rather a triplet-triplet annihilation (TTA) process. This occurrence is attributed to direct carrier trapping within doped EL units, which hinders the transport of rubrene trapped charges, consequently prolonging the lifetime of triplet excitons (T1,rub). Thus, the increased T1,rubconcentration causes TTA to occur at room temperature, causing the rapid decrease of MEL in all devices under high magnetic fields. In devices where only the TTA process occurs, the TTA increases with the increasing current. Consequently, the high magnetic field of devices A-C is only related to TTA. Notably, there exists a high magnetic field TTA of device D in the Alq3/1,4,5,8,9,11-Hexaazatriphenylene-hexacarbonitrile interconnector regardless of the current. This occurs because both EL units in the device emit simultaneously, resulting in the triplet-charge annihilation process of Alq3in the high magnetic field of the MEL. Moreover, the rapid increase in MEL at low magnetic field across all devices is attributed to the ISC between Alq3polaron pairs. This entire process involves Förster and Dexter energy transfer. This article not only provides novel insights into charge generation and separation in the interconnector but also enhances our understanding of the microscopic mechanisms in tandem OLED devices.
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Affiliation(s)
- Wanjiao Li
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Xi Bao
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Cheng Wang
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Yu Yao
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Jiayi Song
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Keao Peng
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Shuang Xu
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Lijia Chen
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Yunxia Guan
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Lianbin Niu
- Key Laboratory of Optoelectronic Engineering, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
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Cho HH, Gorgon S, Hung HC, Huang JY, Wu YR, Li F, Greenham NC, Evans EW, Friend RH. Efficient and Bright Organic Radical Light-Emitting Diodes with Low Efficiency Roll-Off. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303666. [PMID: 37684741 DOI: 10.1002/adma.202303666] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2023] [Revised: 08/08/2023] [Indexed: 09/10/2023]
Abstract
Organic radicals have been of interest due to their potential to replace nonradical-based organic emitters, especially for deep-red/near-infrared (NIR) electroluminescence (EL), based on the spin-allowed doublet fluorescence. However, the performance of the radical-based EL devices is limited by low carrier mobility which causes a large efficiency roll-off at high current densities. Here, highly efficient and bright doublet EL devices are reported by combining a thermally activated delayed fluorescence (TADF) host that supports both electron and hole transport and a tris(2,4,6-trichlorophenyl)methyl-based radical emitter. Steady-state and transient photophysical studies reveal the optical signatures of doublet luminescence mechanisms arising from both host and guest photoexcitation. The host system presented here allows balanced hole and electron currents, and a high maximum external quantum efficiency (EQE) of 17.4% at 707 nm peak emission with substantially improved efficiency roll-off is reported: over 70% of the maximum EQE (12.2%) is recorded at 10 mA cm-2 , and even at 100 mA cm-2 , nearly 50% of the maximum EQE (8.4%) is maintained. This is an important step in the practical application of organic radicals to NIR light-emitting devices.
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Affiliation(s)
- Hwan-Hee Cho
- Cavendish Laboratory, Department of Physics, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Sebastian Gorgon
- Cavendish Laboratory, Department of Physics, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Hsiao-Chun Hung
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, 10617, Taipei, Taiwan
| | - Jun-Yu Huang
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, 10617, Taipei, Taiwan
| | - Yuh-Renn Wu
- Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, 10617, Taipei, Taiwan
| | - Feng Li
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Qianjin Avenue 2699, Changchun, 130012, P. R. China
| | - Neil C Greenham
- Cavendish Laboratory, Department of Physics, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Emrys W Evans
- Department of Chemistry, Swansea University, Singleton Park, Swansea, SA2 8PP, UK
| | - Richard H Friend
- Cavendish Laboratory, Department of Physics, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, UK
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Song J, Wang C, Guan Y, Bao X, Li WJ, Chen L, Niu L. Mediation of exciton concentration on magnetic field effects in NPB : Alq 3-based heterojunction OLEDs. RSC Adv 2023; 13:23619-23625. [PMID: 37555095 PMCID: PMC10405046 DOI: 10.1039/d3ra03608a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Accepted: 07/18/2023] [Indexed: 08/10/2023] Open
Abstract
Organic light-emitting diodes (OLEDs) are considered one of the most promising new display technologies owing to their advantages, such as all-solid-state, high color gamut, and wide viewing angle. However, in terms of special fields, the brightness, lifetime, and stability of the devices need further improvement. Therefore, heterojunction devices with different concentrations were prepared to regulate device brightness. The brightness of the bulk heterojunction device is enhanced by 9740 cd m-2, with a growth rate of about 26.8%. The impact of various temperatures and various exciton concentrations on the device magneto-conductance (MC) and magneto-electroluminescence (MEL) was investigated. Experimental results demonstrate that the exciton concentration inside the device can be tuned to improve optoelectronic properties and organic magnetic effects. The complex spin mixing process inside the bulk heterojunction device is deeply investigated, which provides a reliable basis for the design of bulk heterojunction devices.
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Affiliation(s)
- Jiayi Song
- College of Physics and Electronic Engineering, Chongqing Normal University Chongqing 401331 People's Republic of China
| | - Cheng Wang
- College of Physics and Electronic Engineering, Chongqing Normal University Chongqing 401331 People's Republic of China
| | - Yunxia Guan
- College of Physics and Electronic Engineering, Chongqing Normal University Chongqing 401331 People's Republic of China
| | - Xi Bao
- College of Physics and Electronic Engineering, Chongqing Normal University Chongqing 401331 People's Republic of China
| | - Wan Jiao Li
- College of Physics and Electronic Engineering, Chongqing Normal University Chongqing 401331 People's Republic of China
| | - Lijia Chen
- College of Physics and Electronic Engineering, Chongqing Normal University Chongqing 401331 People's Republic of China
| | - Lianbin Niu
- College of Physics and Electronic Engineering, Chongqing Normal University Chongqing 401331 People's Republic of China
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Jin P, Zhou Z, Wang H, Hao J, Chen R, Wang J, Zhang C. Spin-Enhanced Reverse Intersystem Crossing and Electroluminescence in Copper Acetate-Doped Thermally Activated Delayed Fluorescence Material. J Phys Chem Lett 2022; 13:2516-2522. [PMID: 35275641 DOI: 10.1021/acs.jpclett.2c00300] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Thermally activated delayed fluorescence (TADF) materials are attractive for next-generation organic light-emitting diodes (OLEDs) because of their utilization of nonradiative triplets via reverse intersystem crossing (RISC), which requires not only a small singlet-triplet energy splitting but also the conservation of spin angular momentum. Here we use copper acetate as a spin sensitizer to facilitate RISC and thus enhance electroluminescence in TADF-exciplex OLEDs. Copper acetate is involved in the radiative decay process due to its coordination interaction with exciplex molecules having intermolecular charge-transfer characteristics, which causes significant changes in the photoluminescence intensity and lifetime. Meanwhile, magneto-photoluminescence reveals that the addition of copper acetate promotes spin conversion in the RISC process. It allows the enhancement of the electroluminescence (∼80%) from spin-sensitized OLEDs, accompanied by the suppression of magneto-electroluminescence upon the doping of copper acetate. These results illustrate that using a spin sensitizer may overcome the limitation of harvesting nonradiative triplets in organic luminescent materials and devices.
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Affiliation(s)
- Pengfei Jin
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zeyang Zhou
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hong Wang
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinjie Hao
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Rui Chen
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jingying Wang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Chuang Zhang
- Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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Tang X, Pan R, Zhao X, Zhu H, Xiong Z. Achievement of High-Level Reverse Intersystem Crossing in Rubrene-Doped Organic Light-Emitting Diodes. J Phys Chem Lett 2020; 11:2804-2811. [PMID: 32191490 DOI: 10.1021/acs.jpclett.0c00451] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Using the fingerprint magneto-electroluminescence trace, we observe a fascinating high-level reverse intersystem crossing (HL-RISC) in rubrene-doped organic light-emitting diodes (OLEDs). This HL-RISC is achieved from high-lying triplet states (T2,rub) transferred from host triplet states by the Dexter energy transfer to the lowest singlet states (S1,rub) in rubrene. Although HL-RISC decreases with bias current, it increases with lowering temperature. This is contrary to the temperature-dependent RISC from conventional thermally activated delayed fluorescence, because HL-RISC is an exothermic process instead. Moreover, owing to the competition of exciton energy transfer with direct charge trap, HL-RISC changes nonmonotonically with the dopant concentration and increases luminous efficiency to a maximum at 10% of rubrene, which is about ten times greater than that from the pure-rubrene device. Additionally, the HL-RISC process is not observed in bare rubrene-doped films because of the absence of T2,rub. Our findings pave the way for designing highly efficient orange fluorescent OLEDs.
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Affiliation(s)
- Xiantong Tang
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University, Chongqing 400715, China
| | - Ruiheng Pan
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing Jiaotong University, Beijing 100044, China
| | - Xi Zhao
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University, Chongqing 400715, China
| | - Hongqiang Zhu
- Chongqing Key Laboratory of Photo-Electric Functional Materials, Chongqing Normal University, Chongqing 401331, China
| | - Zuhong Xiong
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University, Chongqing 400715, China
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Hu Y, Tang X, Pan R, Deng J, Zhu H, Xiong Z. Spin-pair state-induced exceptional magnetic field responses from a thermally activated delayed fluorescence-assisted fluorescent material doping system. Phys Chem Chem Phys 2019; 21:17673-17686. [PMID: 31364625 DOI: 10.1039/c9cp01201j] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The thermally activated delayed fluorescence (TADF) material 2,3,5,6-tetrakis(3,6-diphenylcarbazol-9-yl)-1,4-dicyanobenzene (4CzTPN-Ph) and the conventional fluorescent dopant 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were used to co-dope the host material 4,4'-bis(carbazol-9-yl)biphenyl (CBP) for the fabrication of TADF-assisted fluorescent organic light-emitting diodes (OLEDs). Some exceptional magnetic field effect (MFE) curves with abundant structures and four tunable components within a low magnetic field range (≤50 mT) were obtained, in sharp contrast to the maximum of two components observed in typical OLEDs. These MFE components were easily tuned by the injection current, dopant concentration, working temperature, and dopant energy gap, leading to a wide variety of MFE curve line shapes. The experimental results are attributed to the spin-pair state inter-conversions occurring in the device, including intersystem crossing (ISC) of CBP polaron pairs, ISC of 4CzTPN-Ph polaron pairs, reverse ISC (RISC) of 4CzTPN-Ph excitons, RISC of DCJTB polaron pairs, DCJTB triplet fusion, and DCJTB triplet-charge annihilation. Moreover, the exciton energy transfer processes among the host material and the guest dopants had a pronounced impact on the formation of these four components. This work gives a deeper understanding of the microscopic mechanisms of TADF-based co-doped systems for the further development of organic magnetic field effects in the extensive field of OLEDs.
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Affiliation(s)
- Yeqian Hu
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University, Chongqing 400715, People's Republic of China.
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Tang X, Hu Y, Jia W, Pan R, Deng J, Deng J, He Z, Xiong Z. Intersystem Crossing and Triplet Fusion in Singlet-Fission-Dominated Rubrene-Based OLEDs Under High Bias Current. ACS APPLIED MATERIALS & INTERFACES 2018; 10:1948-1956. [PMID: 29300090 DOI: 10.1021/acsami.7b17695] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Singlet fission is usually the only reaction channel for excited states in rubrene-based organic light-emitting diodes (OLEDs) at ambient temperature. Intriguingly, we discover that triplet fusion (TF) and intersystem crossing (ISC) within rubrene-based devices begin at moderate and high current densities (j), respectively. Both processes enhance with decreasing temperature. This behavior is discovered by analyzing the magneto-electroluminescence curves of the devices. The j-dependent magneto-conductance, measured at ambient temperature indicates that spin mixing within polaron pairs that are generated by triplet-charge annihilation (TQA) causes the occurrence of ISC, while the high concentrations of triplets are responsible for generating TF. Additionally, the reduction in exciton formation and the elevated TQA with decreasing temperature may contribute to the enhanced ISC at low temperatures. This work provides considerable insight into the different mechanisms that occur when a high density of excited states exist in rubrene and reasonable reasons for the absence of EL efficiency roll-off in rubrene-based OLEDs.
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Affiliation(s)
- Xiantong Tang
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
| | - Yeqian Hu
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
| | - Weiyao Jia
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
| | - Ruiheng Pan
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
| | - Junquan Deng
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
| | - Jinqiu Deng
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
| | - Zhenghong He
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
| | - Zuhong Xiong
- School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University , Chongqing 400715, People's Republic of China
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