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Arjmand T, Legallais M, Nguyen TTT, Serre P, Vallejo-Perez M, Morisot F, Salem B, Ternon C. Functional Devices from Bottom-Up Silicon Nanowires: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1043. [PMID: 35407161 PMCID: PMC9000537 DOI: 10.3390/nano12071043] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2022] [Revised: 03/03/2022] [Accepted: 03/14/2022] [Indexed: 02/04/2023]
Abstract
This paper summarizes some of the essential aspects for the fabrication of functional devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting nanowires in functional devices, from single nanowires to large assemblies of nanowires such as nanonets (two-dimensional arrays of randomly oriented nanowires), are briefly reviewed. Subsequently, the main properties of nanowires are discussed followed by those of nanonets that benefit from the large numbers of nanowires involved. After describing the main techniques used for the growth of nanowires, in the context of functional device fabrication, the different techniques used for nanowire manipulation are largely presented as they constitute one of the first fundamental steps that allows the nanowire positioning necessary to start the integration process. The advantages and disadvantages of each of these manipulation techniques are discussed. Then, the main families of nanowire-based transistors are presented; their most common integration routes and the electrical performance of the resulting devices are also presented and compared in order to highlight the relevance of these different geometries. Because they can be bottlenecks, the key technological elements necessary for the integration of silicon nanowires are detailed: the sintering technique, the importance of surface and interface engineering, and the key role of silicidation for good device performance. Finally the main application areas for these silicon nanowire devices are reviewed.
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Affiliation(s)
- Tabassom Arjmand
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France; (T.A.); (M.L.); (T.T.T.N.); (P.S.); (M.V.-P.); (F.M.)
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), IMEP-LAHC, F-38000 Grenoble, France
- Univ. Grenoble Alpes, CNRS, CEA/LETI-Minatec, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LTM, F-38000 Grenoble, France;
| | - Maxime Legallais
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France; (T.A.); (M.L.); (T.T.T.N.); (P.S.); (M.V.-P.); (F.M.)
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), IMEP-LAHC, F-38000 Grenoble, France
| | - Thi Thu Thuy Nguyen
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France; (T.A.); (M.L.); (T.T.T.N.); (P.S.); (M.V.-P.); (F.M.)
| | - Pauline Serre
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France; (T.A.); (M.L.); (T.T.T.N.); (P.S.); (M.V.-P.); (F.M.)
- Univ. Grenoble Alpes, CNRS, CEA/LETI-Minatec, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LTM, F-38000 Grenoble, France;
| | - Monica Vallejo-Perez
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France; (T.A.); (M.L.); (T.T.T.N.); (P.S.); (M.V.-P.); (F.M.)
| | - Fanny Morisot
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France; (T.A.); (M.L.); (T.T.T.N.); (P.S.); (M.V.-P.); (F.M.)
| | - Bassem Salem
- Univ. Grenoble Alpes, CNRS, CEA/LETI-Minatec, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LTM, F-38000 Grenoble, France;
| | - Céline Ternon
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France; (T.A.); (M.L.); (T.T.T.N.); (P.S.); (M.V.-P.); (F.M.)
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Dai WS, Yang B, Yan ST, Xu HG, Xu XL, Zheng WJ. Structural and Electronic Properties of LaSi n-/0 ( n = 2-6) Clusters: Anion Photoelectron Spectroscopy and Density Functional Calculations. J Phys Chem A 2021; 125:10557-10567. [PMID: 34870422 DOI: 10.1021/acs.jpca.1c08487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The structures and electronic properties of LaSin- (n = 2-6) anions and their neutral counterparts were investigated by anion photoelectron spectroscopy and theoretical calculations. The vertical detachment energies of the most stable structures of LaSin- (n = 2-6) were measured to be 1.28, 1.58, 2.30, 2.05, and 2.91 eV, respectively. The lowest-energy isomer of LaSi2- is an isosceles triangle with a C2v symmetry. For LaSi3-6- clusters, the most stable isomers are polyhedrons with La atom face-capping the Sin frameworks. The lowest-energy structures of neutral LaSi2,4,5 clusters are similar to their anionic counterparts. The most stable isomer of neutral LaSi3 is a planar structure with C2v symmetry, which is different from the triangular pyramid structure of LaSi3- anion. The lowest-energy isomer of LaSi6- is a C5v symmetric pentagonal bipyramid structure, while for neutral LaSi6 cluster, the C5v structure is not the most stable one. The natural population analysis showed that there is electron transfer from La atoms to Si atoms in LaSin-/0 (n = 2-6). The ZZ tensor component in isochemical shielding surfaces and the anisotropy of the induced current density analyses indicate that the most stable isomer of LaSi6- has aromaticity.
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Affiliation(s)
- Wen-Shuai Dai
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Bin Yang
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,Xi'an Modern Chemistry Research Institute, Xi'an 710065, China
| | - Shuai-Ting Yan
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hong-Guang Xu
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xi-Ling Xu
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei-Jun Zheng
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.,University of Chinese Academy of Sciences, Beijing 100049, China
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Yang K, Coulon N, Salaun AC, Pichon L. 3D growth of silicon nanowires under pure hydrogen plasma at low temperature (250 °C). NANOTECHNOLOGY 2021; 32:065602. [PMID: 33080585 DOI: 10.1088/1361-6528/abc2ee] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The synthesis of silicon nanowires (SiNWs) is carried out at 250 °C under pure hydrogen plasma from monocrsytalline silicon substrates or amorphous silicon thin film, using indium as a catalyst. Studies have been carried out in function of the duration of the hydrogen plasma. The results showed a growth of smooth surface nanowire arrays (diameter 100 nm, length 500 nm) from an indium thickness of 20 nm and a hydrogen plasma duration of 30 min. The growth of nanowires for longer hydrogen plasma durations has led to SiNWs with larger diameters and rougher surfaces, revealing the onset of secondary nanowire growth on these surfaces, probably due to the presence of indium residues. The results present a new procedure for the 3D solid liquid solid growth mode of SiNWs.
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Affiliation(s)
- Kai Yang
- Univ Rennes, CNRS, IETR [Institut d'Electronique et des Technologies du numéRique-UMR 6164, F-35000 Rennes, France
| | - Nathalie Coulon
- Univ Rennes, CNRS, IETR [Institut d'Electronique et des Technologies du numéRique-UMR 6164, F-35000 Rennes, France
| | - Anne Claire Salaun
- Univ Rennes, CNRS, IETR [Institut d'Electronique et des Technologies du numéRique-UMR 6164, F-35000 Rennes, France
| | - Laurent Pichon
- Univ Rennes, CNRS, IETR [Institut d'Electronique et des Technologies du numéRique-UMR 6164, F-35000 Rennes, France
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Zhang T, Wang J, Yu L, Xu J, Roca I Cabarrocas P. Advanced radial junction thin film photovoltaics and detectors built on standing silicon nanowires. NANOTECHNOLOGY 2019; 30:302001. [PMID: 30849766 DOI: 10.1088/1361-6528/ab0e57] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Three-dimensional (3D) construction of radial junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells on standing silicon nanowires (SiNWs) is a promising strategy to maximize the light harvesting performance and improve the photocarrier collection in an optimized junction configuration. The unique light in-coupling and absorption behaviour in the antenna-like 3D photonic structures also necessitates a set of new theoretical models and simulation tools to design, predict and optimize the photovoltaic performance of radial junction solar cells, which can be rather different from planar junction solar cells. Recently, the performance of radial junction a-Si:H thin film solar cells has progressed steadily to a level comparable or even superior to that of their planar counterparts, with plenty of room for further improvement. This review will first address the growth strategy and critical parameter control of SiNWs produced via a plasma-assisted low-temperature vapour-liquid-solid procedure using low-melting-point metals as the catalyst. Then, the construction of high-performance radial junction thin film solar cells over the standing SiNW matrix, as well as their optimal structural designs, will be introduced. At the end, the new applications of 3D radial junction units will be summarized, which include, for example, the construction of very flexible, low-cost and efficient a-Si:H solar cells with the highest power-to-weight ratio, the demonstration of highly sensitive solar-blind photodetectors operating at the ultraviolet wavelength spectrum and the development of novel biomimetic radial tandem junction photodetectors with an intrinsic red-green-blue (RGB) colour distinguishing capability.
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Affiliation(s)
- Ting Zhang
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering, Nanjing University, 210093 Nanjing, People's Republic of China
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Prestopino G, Orsini A, Falconi C, Bietti S, Verona-Rinati G, Caselli F, Bisegna P. Length measurement and spatial orientation reconstruction of single nanowires. NANOTECHNOLOGY 2018; 29:375704. [PMID: 29947334 DOI: 10.1088/1361-6528/aacf54] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The accurate determination of the geometrical features of quasi one-dimensional nanostructures is mandatory for reducing errors and improving repeatability in the estimation of a number of geometry-dependent properties in nanotechnology. In this paper a method for the reconstruction of length and spatial orientation of single nanowires (NWs) is presented. Those quantities are calculated from a sequence of scanning electron microscope (SEM) images taken at different tilt angles using a simple 3D geometric model. The proposed method is evaluated on a collection of SEM images of single GaAs NWs. It is validated through the reconstruction of known geometric features of a standard reference calibration pattern. An overall uncertainty of about 1% in the estimated length of the NWs is achieved.
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Affiliation(s)
- G Prestopino
- Dipartimento di Ingegneria Industriale, Università di Roma 'Tor Vergata,' Via del Politecnico 1, I-00133 Roma, Italy
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6
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IWADATE Y, OHGANE K, OHKUBO T. Magnesiothermic Reduction of Silicon Dioxide to Obtain Fine Silicon Powder in Molten Salt Media: Analysis of Reduction Mechanism. ELECTROCHEMISTRY 2018. [DOI: 10.5796/electrochemistry.17-00090] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022] Open
Affiliation(s)
- Yasuhiko IWADATE
- Department of Applied Chemistry and Biotechnology, Graduate School of Engineering, Chiba University
| | - Keiko OHGANE
- Department of Applied Chemistry and Biotechnology, Graduate School of Engineering, Chiba University
| | - Takahiro OHKUBO
- Department of Applied Chemistry and Biotechnology, Graduate School of Engineering, Chiba University
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7
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Gouda A, Allam NK, Swillam MA. Efficient fabrication methodology of wide angle black silicon for energy harvesting applications. RSC Adv 2017. [DOI: 10.1039/c7ra03568c] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
In this paper, we report an easy and relatively cost effective fabrication technique of a wide band omnidirectional antireflective black silicon surface based on silicon nanowires (SiNWs).
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Affiliation(s)
- Abdelaziz M. Gouda
- Department of Physics
- American University in Cairo
- New Cairo 11835
- Egypt
- Department of Physics
| | - Nageh K. Allam
- Energy Materials Laboratory (EML)
- Department of Physics
- American University in Cairo
- New Cairo 11835
- Egypt
| | - Mohamed A. Swillam
- Nanophotonics Research Laboratory (NRL)
- Department of Physics
- American University in Cairo
- New Cairo 11835
- Egypt
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8
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Yilbas BS, Salhi B, Yousaf MR, Al-Sulaiman F, Ali H, Al-Aqeeli N. Surface Characteristics of Silicon Nanowires/Nanowalls Subjected to Octadecyltrichlorosilane Deposition and n-octadecane Coating. Sci Rep 2016; 6:38678. [PMID: 27934970 PMCID: PMC5146678 DOI: 10.1038/srep38678] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2016] [Accepted: 11/11/2016] [Indexed: 11/09/2022] Open
Abstract
In this study, nanowires/nanowalls were generated on a silicon wafer through a chemical etching method. Octadecyltrichlorosilane (OTS) was deposited onto the nanowire/nanowall surfaces to alter their hydrophobicity. The hydrophobic characteristics of the surfaces were further modified via a 1.5-μm-thick layer of n-octadecane coating on the OTS-deposited surface. The hydrophobic characteristics of the resulting surfaces were assessed using the sessile water droplet method. Scratch and ultraviolet (UV)-visible reflectivity tests were conducted to measure the friction coefficient and reflectivity of the surfaces. The nanowires formed were normal to the surface and uniformly extended 10.5 μm to the wafer surface. The OTS coating enhanced the hydrophobic state of the surface, and the water contact angle increased from 27° to 165°. The n-octadecane coating formed on the OTS-deposited nanowires/nanowalls altered the hydrophobic state of the surface. This study provides the first demonstration that the surface wetting characteristics change from hydrophobic to hydrophilic after melting of the n-octadecane coating. In addition, this change is reversible; i.e., the hydrophilic surface becomes hydrophobic after the n-octadecane coating solidifies at the surface, and the process again occurs in the opposite direction after the n-octadecane coating melts.
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Affiliation(s)
- Bekir Sami Yilbas
- Mechanical Engineering Department, King Fahd University of Petroleum &Minerals, Dhahran, Saudi Arabia.,Centre of Excellence in Renewable Energy, King Fahd University of Petroleum &Minerals, Dhahran, Saudi Arabia
| | - Billel Salhi
- Centre of Excellence in Renewable Energy, King Fahd University of Petroleum &Minerals, Dhahran, Saudi Arabia
| | - Muhammad Rizwan Yousaf
- Mechanical Engineering Department, King Fahd University of Petroleum &Minerals, Dhahran, Saudi Arabia
| | - Fahad Al-Sulaiman
- Centre of Excellence in Renewable Energy, King Fahd University of Petroleum &Minerals, Dhahran, Saudi Arabia
| | - Haider Ali
- Mechanical Engineering Department, King Fahd University of Petroleum &Minerals, Dhahran, Saudi Arabia
| | - Nasser Al-Aqeeli
- Mechanical Engineering Department, King Fahd University of Petroleum &Minerals, Dhahran, Saudi Arabia
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9
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Sekone AK, Chen YB, Lu MC, Chen WK, Liu CA, Lee MT. Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties. NANOSCALE RESEARCH LETTERS 2016; 11:1. [PMID: 26729219 PMCID: PMC4816388 DOI: 10.1186/s11671-015-1209-4] [Citation(s) in RCA: 187] [Impact Index Per Article: 23.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2015] [Accepted: 12/21/2015] [Indexed: 05/24/2023]
Abstract
Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.
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Affiliation(s)
- Abdoul Karim Sekone
- Department of Mechanical Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China
| | - Yu-Bin Chen
- Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
| | - Ming-Chang Lu
- Department of Mechanical Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China
| | - Wen-Kai Chen
- Department of Mechanical Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China
| | - Chia-An Liu
- Department of Mechanical Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China
| | - Ming-Tsang Lee
- Department of Mechanical Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China.
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10
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Yang SP, Wen HS, Lee TM, Lui TS. Cell response on the biomimetic scaffold of silicon nano- and micro-topography. J Mater Chem B 2016; 4:1891-1897. [DOI: 10.1039/c5tb02361k] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Silicon scaffolds were synthesized in a low-pressure furnace via a vapor–liquid–solid (VLS) mechanism.
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Affiliation(s)
- Shih-Ping Yang
- Department of Materials Science and Engineering
- National Cheng Kung University
- Tainan
- Taiwan
| | | | - Tzer-Min Lee
- Institute of Oral Medicine
- National Cheng Kung University
- Tainan
- Taiwan
- School of Dentistry
| | - Truan-Sheng Lui
- Department of Materials Science and Engineering
- National Cheng Kung University
- Tainan
- Taiwan
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11
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Alhmoud H, Delalat B, Ceto X, Elnathan R, Cavallaro A, Vasilev K, Voelcker NH. Antibacterial properties of silver dendrite decorated silicon nanowires. RSC Adv 2016. [DOI: 10.1039/c6ra13734b] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2023] Open
Abstract
Silicon nanowires fabricated through Ag-assisted chemical etching were found to be effective bacterial-traps with strong antibacterial properties resulting from Ag-nanoclusters.
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Affiliation(s)
- Hashim Alhmoud
- Future Industries Institute
- University of South Australia
- University Boulevard
- Mawson Lakes
- Australia
| | - Bahman Delalat
- Future Industries Institute
- University of South Australia
- University Boulevard
- Mawson Lakes
- Australia
| | - Xavier Ceto
- Future Industries Institute
- University of South Australia
- University Boulevard
- Mawson Lakes
- Australia
| | - Roey Elnathan
- Future Industries Institute
- University of South Australia
- University Boulevard
- Mawson Lakes
- Australia
| | - Alex Cavallaro
- Future Industries Institute
- University of South Australia
- University Boulevard
- Mawson Lakes
- Australia
| | - Krasimir Vasilev
- Future Industries Institute
- University of South Australia
- University Boulevard
- Mawson Lakes
- Australia
| | - Nicolas H. Voelcker
- Future Industries Institute
- University of South Australia
- University Boulevard
- Mawson Lakes
- Australia
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12
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Li R, Li M, Li Y, Fu P, Luo Y, Huang R, Song D, Mbengue JM. Co-catalytic mechanism of Au and Ag in silicon etching to fabricate novel nanostructures. RSC Adv 2015. [DOI: 10.1039/c5ra19032k] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The co-catalytic mechanism of silicon etching with a bilayer Au and Ag nanofilm is revealed, resulting in two very different structures.
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Affiliation(s)
- Ruike Li
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
| | - Meicheng Li
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
- Chongqing Materials Research Institute
| | - Yingfeng Li
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
| | - Pengfei Fu
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
| | - Younan Luo
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
| | - Rui Huang
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
| | - Dandan Song
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
| | - Joseph Michel Mbengue
- State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources
- North China Electric Power University
- Beijing
- China
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13
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Sun L, Fan Y, Wang X, Agung Susantyoko R, Zhang Q. Large scale low cost fabrication of diameter controllable silicon nanowire arrays. NANOTECHNOLOGY 2014; 25:255302. [PMID: 24896291 DOI: 10.1088/0957-4484/25/25/255302] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We report on a novel solution etching method to fabricate vertically aligned aperiodic silicon nanowire (SiNW) arrays. We begin with a simple dewetting process to fabricate a monolayer of well-spaced metal particles in situ on a silicon wafer. The particles function as a sacrificial template to pattern a Ti/Au catalyst film into a metal mesh and the size of particles directly determines the diameter of SiNW. A conventional metal-assisted chemical etching process is then carried out with the obtained metal mesh as a catalyst to realize a vertically aligned SiNW array at a large scale and low cost.
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Affiliation(s)
- Leimeng Sun
- Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
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14
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Yan C, Chen G, Chen D, Pei J, Sun J, Xu H, Zhang Y, Qiu Z. Double surfactant-directed controllable synthesis of Sb2S3crystals with comparable electrochemical performances. CrystEngComm 2014. [DOI: 10.1039/c4ce00871e] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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15
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Srivastava SK, Kumar D, Schmitt SW, Sood KN, Christiansen SH, Singh PK. Large area fabrication of vertical silicon nanowire arrays by silver-assisted single-step chemical etching and their formation kinetics. NANOTECHNOLOGY 2014; 25:175601. [PMID: 24717841 DOI: 10.1088/0957-4484/25/17/175601] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Vertically aligned silicon nanowire (SiNW) arrays have been fabricated over a large area using a silver-assisted single-step electroless wet chemical etching (EWCE) method, which involves the etching of silicon wafers in aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. A comprehensive systematic investigation on the influence of different parameters, such as the etching time (up to 15 h), solution temperature (10-80 °C), AgNO3 (5-200 mM) and HF (2-22 M) concentrations, and properties of the multi-crystalline silicon (mc-Si) wafers, is presented to establish a relationship of these parameters with the SiNW morphology. A linear dependence of the NW length on the etch time is obtained even at higher temperature (10-50 °C). The activation energy for the formation of SiNWs on Si(100) has been found to be equal to ∼0.51 eV . It has been shown for the first time that the surface area of the Si wafer exposed to the etching solution is an important parameter in determining the etching kinetics in the single-step process. Our results establish that single-step EWCE offers a wide range of parameters by means of which high quality vertical SiNWs can be produced in a very simple and controlled manner. A mechanism for explaining the influence of various parameters on the evolution of the NW structure is discussed. Furthermore, the SiNW arrays have extremely low reflectance (as low as <3% for Si(100) NWs and <12% for mc-Si NWs) compared to ∼35% for the polished surface in the 350-1000 nm wavelength range. The remarkably low reflection surface of SiNW arrays has great potential for use as an effective light absorber material in novel photovoltaic architectures, and other optoelectronic and photonic devices.
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Affiliation(s)
- Sanjay K Srivastava
- CSIR-National Physical Laboratory, New Delhi 110012, India. Network of Institutes for Solar Energy (NISE), India. Max Planck Institute for the Science of Light, Erlangen, D-91058, Germany
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16
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Wang YC, Chen IC. Low-temperature plasma-assisted growth of germanium nanorods. CrystEngComm 2014. [DOI: 10.1039/c3ce42120a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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17
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Fobelets K, Li CB, Coquillat D, Arcade P, Teppe F. Far infrared response of silicon nanowire arrays. RSC Adv 2013. [DOI: 10.1039/c3ra22880k] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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18
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Wan W, Xiong B, Zhang W, Feng J, Wang E. The effect of the electron-phonon coupling on the thermal conductivity of silicon nanowires. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2012; 24:295402. [PMID: 22728956 DOI: 10.1088/0953-8984/24/29/295402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
The thermal conductivity of free-standing silicon nanowires (SiNWs) with diameters from 1-3 nm has been studied by using the one-dimensional Boltzmann's transport equation. Our model explicitly accounts for the Umklapp scattering process and electron-phonon coupling effects in the calculation of the phonon scattering rates. The role of the electron-phonon coupling in the heat transport is relatively small for large silicon nanowires. It is found that the effect of the electron-phonon coupling on the thermal conduction is enhanced as the diameter of the silicon nanowires decreases. Electrons in the conduction band scatter low-energy phonons effectively where surface modes dominate, resulting in a smaller thermal conductivity. Neglecting the electron-phonon coupling leads to overestimation of the thermal transport for ultra-thin SiNWs. The detailed study of the phonon density of states from the surface atoms and central atoms shows a better understanding of the nontrivial size dependence of the heat transport in silicon nanowire.
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Affiliation(s)
- Wenhui Wan
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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Liu X, Giordano C, Antonietti M. A molten-salt route for synthesis of Si and Ge nanoparticles: chemical reduction of oxides by electrons solvated in salt melt. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm15453f] [Citation(s) in RCA: 60] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
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20
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Lai CH, Lu MY, Chen LJ. Metal sulfide nanostructures: synthesis, properties and applications in energy conversion and storage. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c1jm13879k] [Citation(s) in RCA: 484] [Impact Index Per Article: 40.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Xi S, Shi T, Zhang L, Liu D, Lai W, Tang Z. Growth of highly bright-white silica nanowires as diffusive reflection coating in LED lighting. OPTICS EXPRESS 2011; 19:26507-26514. [PMID: 22274235 DOI: 10.1364/oe.19.026507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Large quantities of silica nanowires were synthesized through thermal treatment of silicon wafer in the atmosphere of N(2)/H(2)(5%) under 1200 °C with Cu as catalyst. These nanowires grew to form a natural bright-white mat, which showed highly diffusive reflectivity over the UV-visible range, with more than 60% at the whole range and up to 88% at 350 nm. The utilization of silica nanowires in diffusive coating on the reflector cup of LED is demonstrated, which shows greatly improved light distribution comparing with the specular reflector cup. It is expected that these nanowires can be promising coating material for optoelectronic applications.
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Affiliation(s)
- Shuang Xi
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, China
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22
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Kwiat M, Elnathan R, Kwak M, de Vries JW, Pevzner A, Engel Y, Burstein L, Khatchtourints A, Lichtenstein A, Flaxer E, Herrmann A, Patolsky F. Non-covalent monolayer-piercing anchoring of lipophilic nucleic acids: preparation, characterization, and sensing applications. J Am Chem Soc 2011; 134:280-92. [PMID: 22084968 DOI: 10.1021/ja206639d] [Citation(s) in RCA: 44] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Abstract
Functional interfaces of biomolecules and inorganic substrates like semiconductor materials are of utmost importance for the development of highly sensitive biosensors and microarray technology. However, there is still a lot of room for improving the techniques for immobilization of biomolecules, in particular nucleic acids and proteins. Conventional anchoring strategies rely on attaching biomacromolecules via complementary functional groups, appropriate bifunctional linker molecules, or non-covalent immobilization via electrostatic interactions. In this work, we demonstrate a facile, new, and general method for the reversible non-covalent attachment of amphiphilic DNA probes containing hydrophobic units attached to the nucleobases (lipid-DNA) onto SAM-modified gold electrodes, silicon semiconductor surfaces, and glass substrates. We show the anchoring of well-defined amounts of lipid-DNA onto the surface by insertion of their lipid tails into the hydrophobic monolayer structure. The surface coverage of DNA molecules can be conveniently controlled by modulating the initial concentration and incubation time. Further control over the DNA layer is afforded by the additional external stimulus of temperature. Heating the DNA-modified surfaces at temperatures >80 °C leads to the release of the lipid-DNA structures from the surface without harming the integrity of the hydrophobic SAMs. These supramolecular DNA layers can be further tuned by anchoring onto a mixed SAM containing hydrophobic molecules of different lengths, rather than a homogeneous SAM. Immobilization of lipid-DNA on such SAMs has revealed that the surface density of DNA probes is highly dependent on the composition of the surface layer and the structure of the lipid-DNA. The formation of the lipid-DNA sensing layers was monitored and characterized by numerous techniques including X-ray photoelectron spectroscopy, quartz crystal microbalance, ellipsometry, contact angle measurements, atomic force microscopy, and confocal fluorescence imaging. Finally, this new DNA modification strategy was applied for the sensing of target DNAs using silicon-nanowire field-effect transistor device arrays, showing a high degree of specificity toward the complementary DNA target, as well as single-base mismatch selectivity.
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Affiliation(s)
- Moria Kwiat
- School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 69978, Israel
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Bondi RJ, Lee S, Hwang GS. First-principles study of the structural, electronic, and optical properties of oxide-sheathed silicon nanowires. ACS NANO 2011; 5:1713-1723. [PMID: 21366232 DOI: 10.1021/nn102232u] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Using a density functional theory approach, we examine the dielectric function (ε(ω)) optical spectra and electronic structure of various silicon nanowire (SiNW) orientations (<100>, <110>, <111>, and <112>) with amorphous oxide sheaths (-a-SiOx) and compare the results against H-terminated reference SiNWs. We extend the same methods to investigate the effects of surface passivation on <111> SiNW properties using functional group termination (-H, -OH, and -F) and three different thicknesses of oxide sheath passivation. Oxide layer growth is evidenced in the spectra by concomitant appearance of tail oxide character with signatures of increased Si disorder. Suboxide contributions and increased Si disorder from oxidation average out the band structure dispersion observed in the reference SiNWs. Furthermore, we plot average Seraphin coefficients for <111> passivations that clearly distinguish functional group termination from surface oxidation and discuss the suboxide and disorder contributions on the characteristic intersection of these coefficients. The substantial difference in properties observed between <111>-OH and <111>-a-SiOx SiNWs emphasizes the importance of using realistic oxidation models to improve understanding of SiNW properties.
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Affiliation(s)
- Robert J Bondi
- Department of Chemical Engineering, University of Texas, Austin, Texas 78712, United States
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Liu CY, Li WS, Chu LW, Lu MY, Tsai CJ, Chen LJ. An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters. NANOTECHNOLOGY 2011; 22:055603. [PMID: 21178255 DOI: 10.1088/0957-4484/22/5/055603] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
A method was developed to grow ordered silicon nanowire with NiSi(2) tip arrays by reacting nickel thin films on silica-coated ordered Si nanowire (NW) arrays. The coating of thin silica shell on Si NW arrays has the effect of limiting the diffusion of nickel during the silicidation process to achieve the single crystalline NiSi(2) NWs. In the meantime, it relieves the distortion of the NWs caused by the strain associated with formation of NiSi(2) to maintain the straightness of the nanowire and the ordering of the arrays. Other nickel silicide phases such as Ni(2)Si and NiSi were obtained if the silicidation processes were conducted on the ordered Si NWs without a thin silica shell. Excellent field emission properties were found for NiSi(2)/Si NW arrays with a turn on field of 0.82 V µm(-1) and a threshold field of 1.39 V µm(-1). The field enhancement factor was calculated to be about 2440. The stability test showed a fluctuation of about 7% with an applied field of 2.6 V µm(-1) for a period of 24 h. The excellent field emission characteristics are attributed to the well-aligned and highly ordered arrangement of the single crystalline NiSi(2)/Si heterostructure field emitters. In contrast to other growth methods, the present growth of ordered nickel silicide/Si NWs on silicon is compatible with silicon nanoelectronics device processes, and also provides a facile route to grow other well-aligned metal silicide NW arrays. The advantages will facilitate its applications as field emission devices.
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Affiliation(s)
- Chun-Yi Liu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Peng KQ, Lee ST. Silicon nanowires for photovoltaic solar energy conversion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011; 23:198-215. [PMID: 20931630 DOI: 10.1002/adma.201002410] [Citation(s) in RCA: 206] [Impact Index Per Article: 15.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.
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Affiliation(s)
- Kui-Qing Peng
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
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26
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Lee DH, Kim Y, Doerk GS, Laboriante I, Maboudian R. Strategies for controlling Si nanowire formation during Au-assisted electroless etching. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm11164g] [Citation(s) in RCA: 36] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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27
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Ostrikov K(K, Mehdipour H. Rapid, simultaneous activation of thin nanowire growth in low-temperature, low-pressure chemically active plasmas. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm10318k] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Wu HC, Tsai HY, Chiu HT, Lee CY. Silicon rice-straw array emitters and their superior electron field emission. ACS APPLIED MATERIALS & INTERFACES 2010; 2:3285-3288. [PMID: 20964442 DOI: 10.1021/am100716y] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Free standing and vertically aligned silicon rice-straw- like array emitters were fabricated by modified electroless metal deposition (EMD), using HF-H(2)O(2) as an etching solution to reduce the emitter density and to make the emitter end of the formed silicon rice-straw arrays shaper than those formed by conventional EMD. These silicon rice-straw array emitters can be turned on at E(0) = 4.7 V/μm, yielding an EFE (electron field emission) current density of J(e) = 139 μA/cm(2) in an applied field of 12.8 V/μm. According to a simple simulation, the excellent EFE performance of the silicon rice-straw array emitters originates in not only the favorable distribution of emitter arrays, but also the shape of the emitter apexes. The modified-EMD method is easily scaled up without expensive equipment, so silicon rice-straw array emitters are a promising alternative to silicon-based field emitters.
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Affiliation(s)
- Hung-Chi Wu
- Department of Materials Science and Engineering, Department of Power Mechanical Engineering, and Center for Nanotechnology, Materials Science, and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
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29
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Li L, Fang X, Zhai T, Liao M, Gautam UK, Wu X, Koide Y, Bando Y, Golberg D. Electrical transport and high-performance photoconductivity in individual ZrS(2) nanobelts. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:4151-6. [PMID: 20730817 DOI: 10.1002/adma.201001413] [Citation(s) in RCA: 49] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Individual ZrS(2)-nanobelt field-effect transistors were fabricated using a photolithography process. Temperature-dependent electrical transport revealed different electrical conductivity mechanism at different working temperature regions. ZrS(2)-nanobelt photodetectors demonstrated a high-performance visible-light photoconductivity.
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Affiliation(s)
- Liang Li
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan.
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30
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Sharma P, Anguita JV, Stolojan V, Henley SJ, Silva SRP. The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO(2) layers. NANOTECHNOLOGY 2010; 21:295603. [PMID: 20585171 DOI: 10.1088/0957-4484/21/29/295603] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
A large area compatible and solid-state process for growing silica nanowires is reported using nickel, titanium and silicon dioxide layers on silicon. The silica nanowires also contain silicon, as indicated by Raman spectroscopy. The phonon confinement model is employed to measure the diameter of the Si rich tail for our samples. The measured Raman peak shift and full width at half-maximum variation with the nanowire diameter qualitatively match with data available in the literature. We have investigated the effect of the seedbed structure on the nanowires, and the effect of using different gas conditions in the growth stages. From this, we have obtained the growth mechanism, and deduced the role of each individual substrate seedbed layer in the growth of the nanowires. We report a combined growth mechanism, where the growth is initiated by a solid-liquid-solid process, which is then followed by a vapour-liquid-solid process. We also report on the formation of two distinct structures of nanowires (type I and type II). The growth of these can be controlled by the use of titanium in the seedbed. We also observe that the diameter of the nanowires exhibits an inverse relation with the catalyst thickness.
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Affiliation(s)
- Parul Sharma
- Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK
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31
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Mbenkum BN, Schneider AS, Schütz G, Xu C, Richter G, van Aken PA, Majer G, Spatz JP. Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates. ACS NANO 2010; 4:1805-1812. [PMID: 20218667 DOI: 10.1021/nn900969y] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10-20 nm), enabling Si 1D growth at temperatures as low as 320 degrees C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 degrees C. On SiOx/Si, only Si nanotubes (SiNTs) are obtained right up to 420 degrees C. A mixture of SiNTs and SiNWs is observed at 450 degrees C and only SiNWs grow at 480 degrees C.
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Affiliation(s)
- Beri N Mbenkum
- Max Planck Institute for Metals Research, Heisenbergstr. 3, D-70569 Stuttgart, Germany
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32
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Lai CH, Huang KW, Cheng JH, Lee CY, Hwang BJ, Chen LJ. Direct growth of high-rate capability and high capacity copper sulfide nanowire array cathodes for lithium-ion batteries. ACTA ACUST UNITED AC 2010. [DOI: 10.1039/c0jm00434k] [Citation(s) in RCA: 160] [Impact Index Per Article: 11.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Yang HJ, Yuan FW, Tuan HY. Vapor–liquid–solid growth of silicon nanowires using organosilane as precursor. Chem Commun (Camb) 2010; 46:6105-7. [PMID: 20657918 DOI: 10.1039/c0cc01454k] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Affiliation(s)
- Hong-Jie Yang
- Department of Chemical Engineering, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan 30013, ROC
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34
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Core–shell structures of silicon nanoparticles and nanowires with free and hydrogenated surface. Chem Phys Lett 2009. [DOI: 10.1016/j.cplett.2009.10.081] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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35
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Kanungo PD, Kögler R, Nguyen-Duc K, Zakharov N, Werner P, Gösele U. Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation. NANOTECHNOLOGY 2009; 20:165706. [PMID: 19420579 DOI: 10.1088/0957-4484/20/16/165706] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Vertical epitaxial short (200-300 nm long) silicon nanowires (Si NWs) grown by molecular beam epitaxy on Si(111) substrates were separately doped p- and n-type ex situ by implanting with B, P and As ions respectively at room temperature. Multi-energy implantations were used for each case, with fluences of the order of 10(13)-10(14) cm(-2), and the NWs were subsequently annealed by rapid thermal annealing (RTA). Transmission electron microscopy showed no residual defect in the volume of the NWs. Electrical measurements of single NWs with a Pt/Ir tip inside a scanning electron microscope (SEM) showed significant increase of electrical conductivity of the implanted NWs compared to that of a nominally undoped NW. The p-type, i.e. B-implanted, NWs showed the conductivity expected from the intended doping level. However, the n-type NWs, i.e. P- and As-implanted ones, showed one to two orders of magnitude lower conductivity. We think that a stronger surface depletion is mainly responsible for this behavior of the n-type NWs.
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Affiliation(s)
- Pratyush Das Kanungo
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
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Kim BS, Koo TW, Lee JH, Kim DS, Jung YC, Hwang SW, Choi BL, Lee EK, Kim JM, Whang D. Catalyst-free growth of single-crystal silicon and germanium nanowires. NANO LETTERS 2009; 9:864-869. [PMID: 19159250 DOI: 10.1021/nl803752w] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We report metal-free synthesis of high-density single-crystal elementary semiconductor nanowires with tunable electrical conductivities and systematic diameter control with narrow size distributions. Single-crystal silicon and germanium nanowires were synthesized by nucleation on nanocrystalline seeds and subsequent one-dimensional anisotropic growth without using external catalyst. Systematic control of the diameters with tight distribution and tunable doping concentration were realized by adjusting the growth conditions, such as growth temperature and ratio of precursor partial pressures. We also demonstrated both n-type and ambipolar field effect transistors using our undoped and phosphorus-doped metal-free silicon nanowires, respectively. This growth approach offers a method to eliminate potential metal catalyst contamination and thus could serve as an important point for further developing nanowire nanoelectronic devices for applications.
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Affiliation(s)
- Byung-Sung Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Cheng Q, Xu S, Ostrikov K(K. Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas: enabling nanocrystallinity at very low hydrogen dilution. ACTA ACUST UNITED AC 2009. [DOI: 10.1039/b904227j] [Citation(s) in RCA: 70] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
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Rong J, Oberbeck F, Wang X, Li X, Oxsher J, Niu Z, Wang Q. Tobacco mosaic virus templated synthesis of one dimensional inorganic–polymer hybrid fibres. ACTA ACUST UNITED AC 2009. [DOI: 10.1039/b901130g] [Citation(s) in RCA: 46] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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39
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Lai CH, Huang KW, Cheng JH, Lee CY, Lee WF, Huang CT, Hwang BJ, Chen LJ. Oriented growth of large-scale nickel sulfide nanowire arrays via a general solution route for lithium-ion battery cathode applications. ACTA ACUST UNITED AC 2009. [DOI: 10.1039/b909261g] [Citation(s) in RCA: 126] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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40
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Pan C, Zhu J. The syntheses, properties and applications of Si, ZnO, metal, and heterojunction nanowires. ACTA ACUST UNITED AC 2009. [DOI: 10.1039/b816463k] [Citation(s) in RCA: 49] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
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41
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Mouchet C, Latu-Romain L, Cayron C, Rouviere E, Celle C, Simonato JP. Growth of one-dimensional Si/SiGe heterostructures by thermal CVD. NANOTECHNOLOGY 2008; 19:335603. [PMID: 21730625 DOI: 10.1088/0957-4484/19/33/335603] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The first results on a simple new process for the direct fabrication of one-dimensional superlattices using common CVD chambers are presented. The experiments were carried out in a 200 mm industrial Centura reactor (Applied Materials). Low dimensionality and superlattices allow a significant increase in the figure of merit of thermoelectrics by controlling the transport of phonons and electrons. The monocrystalline nanowires produced according to this process are both one-dimensional and present heterostructures, with very thin layers (40 nm) of Si and SiGe. Concentrations up to 30 at.% Ge were obtained in the SiGe parts. Complementary techniques including transmission electronic microscopy (TEM), selected area electron diffraction (SAED), energy dispersive x-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) in bright field and high angle annular dark field (HAADF STEM), and energy-filtered transmission electron microscopy (EF-TEM) were used to characterize the nanoheterostructures.
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Chou YC, Wu WW, Cheng SL, Yoo BY, Myung N, Chen LJ, Tu KN. In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si. NANO LETTERS 2008; 8:2194-9. [PMID: 18616326 DOI: 10.1021/nl080624j] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The formation of CoSi and CoSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron microscope. The CoSi2 has undergone an axial epitaxial growth in the Si nanowire and a stepwise growth mode was found. We observed that the stepwise growth occurs repeatedly in the form of an atomic step sweeping across the CoSi2/Si interface. It appears that the growth of a new step or a new silicide layer requires an independent event of nucleation. We are able to resolve the nucleation stage and the growth stage of each layer of the epitaxial growth in video images. In the nucleation stage, the incubation period is measured, which is much longer than the period needed to grow the layer across the silicide/Si interface. So the epitaxial growth consists of a repeating nucleation and a rapid stepwise growth across the epitaxial interface. This is a general behavior of epitaxial growth in nanowires. The axial heterostructure of CoSi2/Si/CoSi2 with sharp epitaxial interfaces has been obtained. A discussion of the kinetics of supply limited and source-limited reaction in nanowire case by point contact reaction is given. The heterostructures are promising as high performance transistors based on intrinsic Si nanowires.
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Affiliation(s)
- Yi-Chia Chou
- Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, California 90095-1595, USA.
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