Highly sensitive 2D organic field-effect transistors for the detection of lithium-ion battery electrolyte leakage

Lithium ion batteries (LIBs) have become indispensable in daily life. Here, we fabricated a broad range of polymer semiconductor films as thin as 2 nm via a standard spin-coating method, and utilized the resulting organic transistors for the detection of LIB electrolytes, which can give an early warning signal before LIB failure.

Gas Sensors Based on Nano/Microstructured Organic Field-Effect Transistors

Benefiting from the advantages of organic field-effect transistors (OFETs), including synthetic versatility of organic molecular design and environmental sensitivity, gas sensors based on OFETs have drawn much attention in recent years. Potential applications focus on the detection of specific gas species such as explosive, toxic gases, or volatile organic compounds (VOCs) that play vital roles in environmental monitoring, industrial manufacturing, smart health care, food security, and national defense. To achieve high sensitivity, selectivity, and ambient stability with rapid response and recovery speed, the regulation and adjustment of the nano/microstructure of the organic semiconductor (OSC) layer has proven to be an effective strategy. Here, the progress of OFET gas sensors with nano/microstructure is selectively presented. Devices based on OSC films one dimensional (1D) single crystal nanowires, nanorods, and nanofibers are introduced. Then, devices based on two dimensional (2D) and ultrathin OSC films, fabricated by methods such as thermal evaporation, dip-coating, spin-coating, and solution-shearing methods are presented, followed by an introduction of porous OFET sensors. Additionally, the applications of nanostructured receptors in OFET sensors are given. Finally, an outlook in view of the current research state is presented and eight further challenges for gas sensors based on OFETs are suggested.

Direct Detection of Dilute Solid Chemicals with Responsive Lateral Organic Diodes

Organic field-effect transistors (OFETs) have emerged as promising sensors targeting chemical analytes in vapors and liquids. However, the direct detection of solid chemicals by OFETs has not been achieved. Here for the first time, we describe the direct detection of solid chemical analytes by organic electronics. An organic diode structure based on a horizontal side-by-side p-n junction was adopted and shown to be superior to OFETs for this purpose. The diodes showed more than 40% current decrease upon exposure to 1 ppm melamine powders. The estimated detection limit to melamine can potentially reach the ppb range. This is the first demonstration of an electronic signal from an interaction between a solid and an organic p-n junction directly, which suggests that our lateral organic diodes are excellent platforms for the development of future sensors when direct detection of solid chemicals is needed. The approach developed here is general and can be extended to chemical sensors targeting various analytes, opening unprecedented opportunities for the development of low-cost and high-performance solid chemical sensors.

Anion-Exchange Induced Strong π-π Interactions in Single Crystalline Naphthalene Diimide for Nitroexplosive Sensing: An Electronic Prototype for Visual on-Site Detection

A new derivative of naphthalene diimide (NDMI) was synthesized that displayed optical, electrical, and visual changes exclusively for the most widespread nitroexplosive and highly water-soluble toxicant picric acid (PA) due to strong π-π interactions, dipole-charge interaction, and a favorable ground state electron transfer process facilitated by Coulombic attraction. The sensing mechanism and interaction between NDMI with PA is demonstrated via X-ray diffraction analysis, (1)H NMR studies, cyclic voltammetry, UV-visible/fluorescence spectroscopy, and lifetime measurements. Single crystal X-ray structure of NDMI revealed the formation of self-assembled crystalline network assisted by noncovalent C-H···I interactions that get disrupted upon introducing PA as a result of anion exchange and strong π-π stacking between NDMI and PA. Morphological studies of NDMI displayed large numbers of single crystalline microrods along with some three-dimensional (3D) daisy-like structures which were fabricated on Al-coated glass substrate to construct a low-cost two terminal sensor device for realizing vapor mode detection of PA at room temperature and under ambient conditions. Furthermore, an economical and portable electronic prototype was developed for visual and on-site detection of PA vapors under exceptionally realistic conditions.

Photosensitive and Flexible Organic Field-Effect Transistors Based on Interface Trapping Effect and Their Application in 2D Imaging Array

Flexible organic phototransistors are fabricated using polylactide (PLA), a polar bio-material, as the dielectric material. The charge trapping effect induced by the polar groups of the PLA layer leads to a photosensitivity close to ≈10⁴. The excellent performance of this new device design is further demonstrated by incorporating the photo-transistors into a sensor array to successfully image a star pattern.

Conjugated Polymer Nanoparticles for the Amplified Detection of Nitro-explosive Picric Acid on Multiple Platforms

Spontaneously formed conjugated polymer nanoparticles (CPNs) or polymer dots displayed remarkable fluorescence response toward nitroexplosive-picric acid (PA) in multiple environments including 100% aqueous media, solid support using portable paper strips and vapor phase detection via two terminal device. This new cationic conjugated polyelectrolyte (CPE) poly(3,3'-((2-phenyl-9H-fluorene-9,9-diyl)bis(hexane-6,1-diyl))bis(1-methyl-1H-imidazol-3-ium)bromide) (PFMI) was synthesized by Suzuki coupling polymerization followed by post functionalization method without employing any hectic purification technique. Highest quenching constant value (K(sv)) of 1.12 × 10(8) M(-1) and a very low detection limit of 30.9 pM/7.07 ppt were obtained exclusively for PA in 100% aqueous environment which is rare and unique for any CPE/CPNs. Contact mode detection of PA was also performed using simple, cost-effective and portable fluorescent paper strips for achieving on-site detection. Furthermore, the two terminal sensor device fabricated with nanoparticles of PFMI (PFMI-NPs) provides an exceptional and unprecedented platform for the vapor mode detection of PA under ambient conditions. The mechanism for the ultrasensitivity of PFMI-NPs probe to detect PA is attributed to the "molecular-wire effect", electrostatic interaction, photoinduced electron transfer (PET), and possible resonance energy transfer (RET).

Electrochemical processes and mechanistic aspects of field-effect sensors for biomolecules

Electronic biosensing is a leading technology for determining concentrations of biomolecules. In some cases, the presence of an analyte molecule induces a measured change in current flow, while in other cases, a new potential difference is established. In the particular case of a field effect biosensor, the potential difference is monitored as a change in conductance elsewhere in the device, such as across a film of an underlying semiconductor. Often, the mechanisms that lead to these responses are not specifically determined. Because improved understanding of these mechanisms will lead to improved performance, it is important to highlight those studies where various mechanistic possibilities are investigated. This review explores a range of possible mechanistic contributions to field-effect biosensor signals. First, we define the field-effect biosensor and the chemical interactions that lead to the field effect, followed by a section on theoretical and mechanistic background. We then discuss materials used in field-effect biosensors and approaches to improving signals from field-effect biosensors. We specifically cover the biomolecule interactions that produce local electric fields, structures and processes at interfaces between bioanalyte solutions and electronic materials, semiconductors used in biochemical sensors, dielectric layers used in top-gated sensors, and mechanisms for converting the surface voltage change to higher signal/noise outputs in circuits.

Novel top-contact monolayer pentacene-based thin-film transistor for ammonia gas detection

We report on the fabrication of an organic field-effect transistor (OFET) of a monolayer pentacene thin film with top-contact electrodes for the aim of ammonia (NH3) gas detection by monitoring changes in its drain current. A top-contact configuration, in which source and drain electrodes on a flexible stamp [poly(dimethylsiloxane)] were directly contacted with the monolayer pentacene film, was applied to maintain pentacene arrangement ordering and enhance the monolayer OFET detection performance. After exposure to NH3 gas, the carrier mobility at the monolayer OFET channel decreased down to one-third of its original value, leading to a several orders of magnitude decrease in the drain current, which tremendously enhanced the gas detection sensitivity. This sensitivity enhancement to a limit of the 10 ppm level was attributed to an increase of charge trapping in the carrier channel, and the amount of trapped states was experimentally evaluated by the threshold voltage shift induced by the absorbed NH3 molecular analyte. In contrast, a conventional device with a 50-nm-thick pentacene layer displayed much higher mobility but lower response to NH3 gas, arising from the impediment of analyte penetrating into the conductive channel, owing to the thick pentacene film.

Visualizing and quantifying charge distributions correlated to threshold voltage shifts in lateral organic transistors

Lateral organic field-effect transistors (OFETs), consisting of a polystyrene (PS) polymer gate material and a pentacene organic semiconductor (OSC), were electrically polarized from bias stress during operation or in a separate charging step, and investigated with scanning Kelvin probe microscopy (SKPM) and current-voltage determinations. The charge storage inside the polymer was indicated, without any alteration of the OFET, as a surface voltage with SKPM, and correlated to a threshold voltage (VT) shift in the transistor operation. The SKPM method allows the gate material/OSC interface of the OFET to be visualized and the surface voltage variation between the two gate material interfaces to be mapped. The charge distribution for three samples was derived from the surface voltage maps using Poisson's equation. Charge densities calculated this way agreed with those derived from the VT shifts and the lateral gate-OSC capacitance. We also compared the behavior of two other polymers with PS: PS accepted the most static charge in its entire volume, poly(2-trifluoromethylstyrene) (F-PS) had the most stability to bias stress, and poly(methyl methacrylate) (PMMA) showed the most leakage current and least consistent response to static charging of the three polymers. This work provides a clear demonstration that surface voltage on a working OFET gate material can be related to the quantity of static charge responsible for bias stress and nonvolatility in OFETs.

Highly sensitive NH3 detection based on organic field-effect transistors with tris(pentafluorophenyl)borane as receptor

We have increased organic field-effect transistor (OFET) NH(3) response using tris(pentafluorophenyl)borane (TPFB) as a receptor. OFETs with this additive could detect concentrations of 450 ppb v/v, with a limit of detection of 350 ppb, the highest sensitivity reported to date for semiconductor films; in comparison, when triphenylmethane (TPM) or triphenylborane (TFB) was used as an additive, no obvious improvement in the sensitivity was observed. These OFETs also showed considerable selectivity with respect to common organic vapors and stability toward storage. Furthermore, excellent memory of exposure was achieved by keeping the exposed devices in a sealed container stored at -30 °C, the first such capability demonstrated with OFETs.

Air-stable spin-coated naphthalocyanine transistors for enhanced chemical vapor detection

Air-stable organic thin-film transistor (OTFT) sensors fabricated using spin-cast films of 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine (OBNc) demonstrated improved chemical vapor sensitivity and selectivity relative to vacuum-deposited phthalocyanine (H(2)Pc) OTFTs. UV-vis spectroscopy data show that annealed spin-cast OBNc films exhibit a red-shift in the OBNc Q-band λ(max) which is generally diagnostic of improved π-orbital overlap in phthalocyanine ring systems. Annealed OBNc OTFTs have mobilities of 0.06 cm(2) V(-1) s(-1), low threshold voltages (|V(th)| < 1 V), and on/off ratios greater than 10(6). These air-stable device parameters are utilized for sensing modalities which enhance the sensitivity and selectivity of OBNc OTFTs relative to H(2)Pc OTFTs. While both sensors exhibit mobility decreases for all analytes, only OBNc OTFTs exhibit V(th) changes for highly polar/nonpolar analytes. The observed mobility decreases for both sensors are consistent with electron donation trends via hydrogen bonding by basic analytes. In contrast, V(th) changes for OBNc sensors appear to correlate with the analyte's octanol-water partition coefficient, consistent with polar molecules stabilizing charge in the organic semiconductor film. The analyte induced V(th) changes for OBNc OTFTs can be employed to develop selective multiparameter sensors which can sense analyte stabilized fixed charge in the film.

Digital Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors

Chemiresistors and sensitive OFETs have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Here we report higher order logic circuits utilizing OFETs sensitive to amine vapors. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including an unprecedented analyte-induced current increase by the n-channel semiconductor. This represents the first step towards 'intelligent sensors' that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt

We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 μA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 μm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.