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Jo SB, Kang J, Cho JH. Recent Advances on Multivalued Logic Gates: A Materials Perspective. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004216. [PMID: 33898193 PMCID: PMC8061388 DOI: 10.1002/advs.202004216] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/03/2020] [Revised: 12/13/2020] [Indexed: 06/12/2023]
Abstract
The recent advancements in multivalued logic gates represent a rapid paradigm shift in semiconductor technology toward a new era of hyper Moore's law. Particularly, the significant evolution of materials is guiding multivalued logic systems toward a breakthrough gradually, whereby they are transcending the limits of conventional binary logic systems in terms of all the essential figures of merit, i.e., power dissipation, operating speed, circuit complexity, and, of course, the level of the integration. In this review, recent advances in the field of multivalued logic gates based on emerging materials to provide a comprehensive guideline for possible future research directions are reviewed. First, an overview of the design criteria and figures of merit for multivalued logic gates is presented, and then advancements in various emerging nanostructured materials-ranging from 0D quantum dots to multidimensional heterostructures-are summarized and these materials in terms of device design criteria are assessed. The current technological challenges and prospects of multivalued logic devices are also addressed and major research trends are elucidated.
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Affiliation(s)
- Sae Byeok Jo
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722South Korea
| | - Joohoon Kang
- School of Advanced Materials Science and EngineeringSungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722South Korea
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Jiang T, Shao Z, Fang H, Wang W, Zhang Q, Wu D, Zhang X, Jie J. High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals. ACS APPLIED MATERIALS & INTERFACES 2019; 11:24367-24376. [PMID: 31187623 DOI: 10.1021/acsami.9b03474] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Lead halide perovskites have been extensively investigated in a host of optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The halogen vacancy defects arising from the halogen-poor growth environment are normally regarded as an unfavorable factor to restrict the device performance. Here, for the first time, we demonstrate the utilization of the vacancy defects in lead halide perovskite nanostructures for achieving high-performance nanofloating gate memories (NFGMs). CH3NH3PbBr3 nanocrystals (NCs) were uniformly decorated on the CdS nanoribbon (NR) surface via a facile dip-coating process, forming a CdS NR/CH3NH3PbBr3 NC core-shell structure. Significantly, owing to the existence of sufficient carrier trapping states in CH3NH3PbBr3 NCs, the hybrid device possessed an ultralarge memory window up to 77.4 V, a long retention time of 12 000 s, a high current ON/OFF ratio of 7 × 107, and a long-term air stability for 50 days. The memory window of the device is among the highest for the low-dimensional nanostructure-based NFGMs. Also, this strategy shows good universality and can be extended to other perovskite nanostructures for the construction of high-performance NFGMs. This work paves the way toward the fabrication of new-generation, high-capacity nonvolatile memories using lead halide perovskite nanostructures.
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Affiliation(s)
- Tianhao Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Zhibin Shao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Huan Fang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Wei Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Qiao Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Di Wu
- School of Physics and Engineering, and Key Laboratory of Material Physics, Ministry of Education , Zhengzhou University , Zhengzhou , Henan 450052 , P. R. China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
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Xie C, Nie B, Zhu L, Zeng LH, Yu YQ, Wang XH, Fang QL, Luo LB, Wu YC. High-performance nonvolatile Al/AlO(x)/CdTe:Sb nanowire memory device. NANOTECHNOLOGY 2013; 24:355203. [PMID: 23924708 DOI: 10.1088/0957-4484/24/35/355203] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Here we demonstrate a room temperature processed nonvolatile memory device based on an Al/AlO(x)/CdTe:Sb nanowire (NW) heterojunction. Electrical analysis shows an echelon hysteresis composed of a high-resistance state (HRS) and a low-resistance state (LRS), which can allow it to write and erase data from the device. The conductance ratio is as high as 10⁶, with a retention time of 3 × 10⁴ s. Moreover, the SET voltages ranged from +6 to +8 V, whilst the RESET voltage ∼0 V. In addition, flexible memory nano-devices on PET substrate with comparable switching performance at bending condition were fabricated. XPS analysis of the Al/AlO(x)/CdTe:Sb NW heterojunction after controlled Ar⁺ bombardment reveals that this memory behavior is associated with the presence of ultra-thin AlO(x) film. This Al/AlO(x)/CdTe:Sb NW heterojunction will open up opportunities for new memory devices with different configurations.
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Affiliation(s)
- Chao Xie
- School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
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Li H, Wang X, Xu J, Zhang Q, Bando Y, Golberg D, Ma Y, Zhai T. One-dimensional CdS nanostructures: a promising candidate for optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:3017-3037. [PMID: 23629853 DOI: 10.1002/adma.201300244] [Citation(s) in RCA: 79] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2013] [Indexed: 06/02/2023]
Abstract
As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted.
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Affiliation(s)
- Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, PR China
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Chen CM, Liu CM, Wei KH, Jeng US, Su CH. Non-volatile organic field-effect transistor memory comprising sequestered metal nanoparticles in a diblock copolymer film. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c1jm13936c] [Citation(s) in RCA: 58] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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