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Li X, Lou C, Li W, Wang L, Gao F, Shao G, Chen S, Yang W. High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites. ACS APPLIED MATERIALS & INTERFACES 2021; 13:3062-3069. [PMID: 33405499 DOI: 10.1021/acsami.0c20694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Making field emitters with both low turn-on field (Eto) and high current emission stability is one of the keys to push forward their practical applications. In the present work, we report the exploration of high-performance field emitters with designed sharp corners around SiC nanowires for fundamentally enhanced electron emission sites. The sharp corners with tailored densities are rationally created based on a facile etching technique. Accordingly, the emission sites and nanowires are integrated into a single-crystalline configuration without interfaces, which could offer the emitters with a robust structure to avoid the structural damage induced by the generated Joule heat and electrostatic forces over long-term field emission (FE) operation. Consequently, the Eto of the as-fabricated SiC field emitter is low down to 0.52 V/μm, which is comparable to the state-of-the-art one ever reported. Moreover, they have high electron emission stability with a current fluctuation of just 2% over 10 h, representing their promising applications in FE-based electronic units.
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Affiliation(s)
- Xiaoxiao Li
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P. R. China
- School of Materials Science and Engineering, Shandong University, Jinan 250061, P. R. China
| | - Chenxuan Lou
- Department of Physics, Beijing Normal University, Beijing 100875, P. R. China
| | - Weijun Li
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P. R. China
| | - Lin Wang
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P. R. China
| | - Fengmei Gao
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P. R. China
| | - Gang Shao
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, P. R. China
| | - Shanliang Chen
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P. R. China
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P. R. China
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Chen S, Shang M, Wang L, Yang Z, Gao F, Zheng J, Yang W. Superior B-Doped SiC Nanowire Flexible Field Emitters: Ultra-Low Turn-On Fields and Robust Stabilities against Harsh Environments. ACS APPLIED MATERIALS & INTERFACES 2017; 9:35178-35190. [PMID: 28933812 DOI: 10.1021/acsami.7b07921] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Low turn-on fields together with boosted stabilities are recognized as two key factors for pushing forward the implementations of the field emitters in electronic units. In current work, we explored superior flexible field emitters based on single-crystalline 3C-SiC nanowires, which had numbers of sharp edges, as well as corners surrounding the wire body and B dopants. The as-constructed field emitters behaved exceptional field emission (FE) behaviors with ultralow turn-on fields (Eto) of 0.94-0.68 V/μm and current emission fluctuations of ±1.0-3.4%, when subjected to harsh working conditions under different bending cycles, various bending configurations, as well as elevated temperature environments. The sharp edges together with the edges were able to significantly increase the electron emission sites, and the incorporated B dopants could bring a more localized state close to the Fermi level, which rendered the SiC nanowire emitters with low Eto, large field enhancement factor as well as robust current emission stabilities. Current B-doped SiC nanowires could meet all essential requirements for an ideal flexible emitters, which exhibit their promising prospect to be applied in flexible electronic units.
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Affiliation(s)
- Shanliang Chen
- Institute of Material, Ningbo University of Technology , Ningbo 315016, P. R. China
| | - Minghui Shang
- Institute of Material, Ningbo University of Technology , Ningbo 315016, P. R. China
| | - Lin Wang
- Institute of Material, Ningbo University of Technology , Ningbo 315016, P. R. China
| | - Zuobao Yang
- Institute of Material, Ningbo University of Technology , Ningbo 315016, P. R. China
| | - Fengmei Gao
- Institute of Material, Ningbo University of Technology , Ningbo 315016, P. R. China
| | - Jinju Zheng
- Institute of Material, Ningbo University of Technology , Ningbo 315016, P. R. China
| | - Weiyou Yang
- Institute of Material, Ningbo University of Technology , Ningbo 315016, P. R. China
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Saha S, Roy R, Das S, Sen D, Ghorai UK, Mazumder N, Chattopadhyay KK. Local Field Enhancement-Induced Enriched Cathodoluminescence Behavior from CuI-RGO Nanophosphor Composite for Field-Emission Display Applications. ACS APPLIED MATERIALS & INTERFACES 2016; 8:25571-25577. [PMID: 27166784 DOI: 10.1021/acsami.6b02047] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Field-emission displays (FEDs) constitute one of the major foci of the cutting edge materials research because of the increasingly escalating demand for high-resolution display panels. However, poor efficiencies of the concurrent low voltage cathodoluminescence (CL) phosphors have created a serious bottleneck in the commercialization of such devices. Herein we report a novel CuI-RGO composite nanophosphor that exhibits bright red emission under low voltage electron beam excitation. Quantitative assessment of CL spectra reveals that CuI-RGO nanocomposite phosphor leads to the 4-fold enhancement in the CL intensity as compared to the pristine CuI counterpart. Addition of RGO in the CuI matrix facilitates efficient triggering of luminescence centers that are activated by local electric field enhancement at the CuI-RGO contact points. In addition, conducting RGO also reduces the negative loading problem on the surface of the nanophosphor composite. The concept presented here opens up a novel generic route for enhancing CL intensity of the existing (nano)phosphors as well as validates the bright prospects of the CuI-RGO composite nanophosphor in this rapidly growing field.
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Affiliation(s)
- Subhajit Saha
- School of Materials Science and Nanotechnology, Jadavpur University , Kolkata 700032, India
| | - Rajarshi Roy
- School of Materials Science and Nanotechnology, Jadavpur University , Kolkata 700032, India
- Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Swati Das
- Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Dipayan Sen
- Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Uttam Kumar Ghorai
- School of Materials Science and Nanotechnology, Jadavpur University , Kolkata 700032, India
| | - Nilesh Mazumder
- Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Kalyan Kumar Chattopadhyay
- School of Materials Science and Nanotechnology, Jadavpur University , Kolkata 700032, India
- Department of Physics, Jadavpur University , Kolkata 700032, India
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Chen S, Shang M, Gao F, Wang L, Ying P, Yang W, Fang X. Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2016; 3:1500256. [PMID: 27774383 PMCID: PMC5063129 DOI: 10.1002/advs.201500256] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2015] [Revised: 09/16/2015] [Indexed: 05/31/2023]
Abstract
Novel P-doped SiC flexible field emitters are developed on carbon fabric substrates, having both low Eto of 1.03-0.73 Vμm-1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%-3.4%).
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Affiliation(s)
- Shanliang Chen
- Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China; School of Material Science and Engineering China University of Mining and Technology Xuzhou City 221116 P.R. China
| | - Minghui Shang
- Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China
| | - Fengmei Gao
- Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China
| | - Lin Wang
- Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China
| | - Pengzhan Ying
- School of Material Science and Engineering China University of Mining and Technology Xuzhou City 221116 P.R. China
| | - Weiyou Yang
- Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China
| | - Xiaosheng Fang
- Department of Materials Science Fudan University Shanghai 200433 P. R. China
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Lou P. Room-temperature metal-free ferromagnetism, stability, and spin transport properties in topologically fluorinated silicon carbide nanotubes. RSC Adv 2016. [DOI: 10.1039/c6ra00839a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A new topologically fluorinated armchair single-walled silicon carbide nanotube has been predicted via first principles density functional theory (DFT) and nonequilibrium Green's function method, as well as ab initio molecular dynamic (MD) simulations.
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Affiliation(s)
- Ping Lou
- Department of Physics
- Anhui University
- Hefei 230039
- China
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Wang L, Wei G, Gao F, Li C, Yang W. High-temperature stable field emission of B-doped SiC nanoneedle arrays. NANOSCALE 2015; 7:7585-7592. [PMID: 25873281 DOI: 10.1039/c5nr00952a] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Current emission stability is one of the key issues for field emitters for them to be practically applied as electron sources. In the present work, large-scale and well-aligned B-doped SiC nanoneedle arrays have been grown on 6H-SiC wafer substrates via pyrolysis of polymeric precursors. The measured field emission (FE) characteristics suggest that the turn-on fields of the as-synthesized SiC nanoneedle arrays are reduced from 1.92 to 0.98 V μm(-1) with temperature increasing from room temperature (RT) to 500 °C, suggesting their excellent FE performances. The slightly changed current fluctuations (only ∼1.3%) between RT and 200 °C confirm that the present SiC nanoarrays with B dopants could be highly stable field emitters to be used in service under harsh conditions of high temperatures.
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Affiliation(s)
- Lin Wang
- School of Materials Science and Engineering, University of Science & Technology Beijing, Beijing City, 100083, P.R. China.
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Chen S, Ying P, Wang L, Gao F, Wei G, Zheng J, Xie Z, Yang W. Controlled growth of SiC flexible field emitters with clear and sharp tips. RSC Adv 2014. [DOI: 10.1039/c3ra46982d] [Citation(s) in RCA: 34] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We report the controlled growth of 3C-SiC flexible field emitters with clear and sharp tips based on the VLS mechanism.
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Affiliation(s)
- Shanliang Chen
- School of Chemical Engineering and Technology
- China University of Mining and Technology
- Xuzhou, P.R. China
- School of Material Science and Engineering
- China University of Mining and Technology
| | - Pengzhan Ying
- School of Material Science and Engineering
- China University of Mining and Technology
- Xuzhou, P.R. China
| | - Lin Wang
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Fengmei Gao
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Guodong Wei
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Jinju Zheng
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
| | - Zhipeng Xie
- State Key Laboratory of New Ceramics and Fine Processing
- Department of Materials Science and Engineering
- Tsinghua University
- Beijing, China
| | - Weiyou Yang
- Institute of Materials
- Ningbo University of Technology
- Ningbo, P.R. China
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Lou P. Edge reconstruction effect in pristine and H-passivated zigzag silicon carbide nanoribbons. Phys Chem Chem Phys 2011; 13:17194-204. [DOI: 10.1039/c1cp21287g] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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