High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

Making field emitters with both low turn-on field (E_to) and high current emission stability is one of the keys to push forward their practical applications. In the present work, we report the exploration of high-performance field emitters with designed sharp corners around SiC nanowires for fundamentally enhanced electron emission sites. The sharp corners with tailored densities are rationally created based on a facile etching technique. Accordingly, the emission sites and nanowires are integrated into a single-crystalline configuration without interfaces, which could offer the emitters with a robust structure to avoid the structural damage induced by the generated Joule heat and electrostatic forces over long-term field emission (FE) operation. Consequently, the E_to of the as-fabricated SiC field emitter is low down to 0.52 V/μm, which is comparable to the state-of-the-art one ever reported. Moreover, they have high electron emission stability with a current fluctuation of just 2% over 10 h, representing their promising applications in FE-based electronic units.

Superior B-Doped SiC Nanowire Flexible Field Emitters: Ultra-Low Turn-On Fields and Robust Stabilities against Harsh Environments

Low turn-on fields together with boosted stabilities are recognized as two key factors for pushing forward the implementations of the field emitters in electronic units. In current work, we explored superior flexible field emitters based on single-crystalline 3C-SiC nanowires, which had numbers of sharp edges, as well as corners surrounding the wire body and B dopants. The as-constructed field emitters behaved exceptional field emission (FE) behaviors with ultralow turn-on fields (E_to) of 0.94-0.68 V/μm and current emission fluctuations of ±1.0-3.4%, when subjected to harsh working conditions under different bending cycles, various bending configurations, as well as elevated temperature environments. The sharp edges together with the edges were able to significantly increase the electron emission sites, and the incorporated B dopants could bring a more localized state close to the Fermi level, which rendered the SiC nanowire emitters with low E_to, large field enhancement factor as well as robust current emission stabilities. Current B-doped SiC nanowires could meet all essential requirements for an ideal flexible emitters, which exhibit their promising prospect to be applied in flexible electronic units.

Local Field Enhancement-Induced Enriched Cathodoluminescence Behavior from CuI-RGO Nanophosphor Composite for Field-Emission Display Applications

Field-emission displays (FEDs) constitute one of the major foci of the cutting edge materials research because of the increasingly escalating demand for high-resolution display panels. However, poor efficiencies of the concurrent low voltage cathodoluminescence (CL) phosphors have created a serious bottleneck in the commercialization of such devices. Herein we report a novel CuI-RGO composite nanophosphor that exhibits bright red emission under low voltage electron beam excitation. Quantitative assessment of CL spectra reveals that CuI-RGO nanocomposite phosphor leads to the 4-fold enhancement in the CL intensity as compared to the pristine CuI counterpart. Addition of RGO in the CuI matrix facilitates efficient triggering of luminescence centers that are activated by local electric field enhancement at the CuI-RGO contact points. In addition, conducting RGO also reduces the negative loading problem on the surface of the nanophosphor composite. The concept presented here opens up a novel generic route for enhancing CL intensity of the existing (nano)phosphors as well as validates the bright prospects of the CuI-RGO composite nanophosphor in this rapidly growing field.

Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters

Novel P-doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E_to of 1.03-0.73 Vμm^-1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%-3.4%).

Room-temperature metal-free ferromagnetism, stability, and spin transport properties in topologically fluorinated silicon carbide nanotubes

A new topologically fluorinated armchair single-walled silicon carbide nanotube has been predicted via first principles density functional theory (DFT) and nonequilibrium Green's function method, as well as ab initio molecular dynamic (MD) simulations.

High-temperature stable field emission of B-doped SiC nanoneedle arrays

Current emission stability is one of the key issues for field emitters for them to be practically applied as electron sources. In the present work, large-scale and well-aligned B-doped SiC nanoneedle arrays have been grown on 6H-SiC wafer substrates via pyrolysis of polymeric precursors. The measured field emission (FE) characteristics suggest that the turn-on fields of the as-synthesized SiC nanoneedle arrays are reduced from 1.92 to 0.98 V μm(-1) with temperature increasing from room temperature (RT) to 500 °C, suggesting their excellent FE performances. The slightly changed current fluctuations (only ∼1.3%) between RT and 200 °C confirm that the present SiC nanoarrays with B dopants could be highly stable field emitters to be used in service under harsh conditions of high temperatures.

Controlled growth of SiC flexible field emitters with clear and sharp tips

We report the controlled growth of 3C-SiC flexible field emitters with clear and sharp tips based on the VLS mechanism.