Tunable Hydrogen-Related Defects in ZnO Nanowires Using Oxygen Plasma Treatment by Ion Energy Adjustment

The chemical bath deposition (CBD) process enables the deposition of ZnO nanowires (NWs) on various substrates with customizable morphology. However, the hydrogen-rich CBD environment introduces numerous hydrogen-related defects, unintentionally doping the ZnO NWs and increasing their electrical conductivity. The oxygen-based plasma treatment can modify the nature and amount of these defects, potentially tailoring the ZnO NW properties for specific applications. This study examines the impact of the average ion energy on the formation of oxygen vacancies (VO) and hydrogen-related defects in ZnO NWs exposed to low-pressure oxygen plasma. Using X-ray photoelectron spectroscopy (XPS), 5 K cathodoluminescence (5K CL), and Raman spectroscopy, a comprehensive understanding of the effect of the oxygen ion energy on the formation of defects and defect complexes was established. A series of associative and dissociative reactions indicated that controlling plasma process parameters, particularly ion energy, is crucial. The XPS data suggested that increasing the ion energy could enhance Fermi level pinning by increasing the amount of VO and favoring the hydroxyl group adsorption, expanding the depletion region of charge carriers. The 5K CL and Raman spectroscopy further demonstrated the potential to adjust the ZnO NW physical properties by varying the oxygen ion energy, affecting various donor- and acceptor-type defect complexes. This study highlights the ability to tune the ZnO NW properties at low temperature by modifying plasma process parameters, offering new possibilities for a wide variety of nanoscale engineering devices fabricated on flexible and/or transparent substrates.

Multifunctional and smart Er2O3-ZnO nanocomposites for electronic ceramic varistors and visible light degradation of wastewater treatment

In this proposed study, erbium (Er³⁺)-doped ZnO nanocomposites were prepared through the effective, basic, and green combustion method. The significant effects of Er dopants on the structural, morphological features, dielectric, and optical behaviors of the pure ZnO matrix as well as Er₂O₃-ZnO nanostructured materials were investigated applying X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared (FT-IR) spectroscopy, and UV-Vis spectrophotometer techniques. These results showed that the synthesized Er₂O₃-ZnO nanocomposites are well polycrystalline. The Er₂O₃-ZnO nanocomposites are almost uniformly distributed on the surface morphologies. Furthermore, UV-Vis diffuse reflectance spectroscopy, AC electrical conductivity, and dielectric properties' current-voltage characteristics were utilized to examine the influence of erbium doping on the optical properties, energy bandgaps of the proposed Er₂O₃-ZnO nanostructured powder. The tested nano-samples were applied for the visible light photodegradation of p-chlorophenol(4-CP) and p-nitrophenol (4-NP). The Er-doped ZnO ratio affects the photocatalytic activity of the ZnO matrix. This current research substantiated that more than 99.5% of 4-CP and 4-NP were photodegraded through 30 min of irradiation. Four times, the Er:ZnO nanocatalysts were used and still displayed an efficiency of more than 96.5% for 4-CP and 4-NP degradations in the specified period of 30 min. The as-prepared Er₂O₃-ZnO nanostructures are considered novel potential candidates in broad nano-applications from visible photocatalytic degradation of waste pollutants to the electronic varistor devices.

Particle size enlargement and 6-fold fluorescence enhancement of colloidal CdS quantum dots induced by selenious acid

Herein, colloidal CdS QDs have been synthesized by using cysteine as a stabilizing agent. The interaction between the CdS QDs and selenious acid was monitored by using UV-visible, fluorescence and Fourier transform infrared (FTIR) spectroscopy. The onset of absorption of the CdS QDs (430 nm) was progressively red-shifted upon increase in the concentration of selenious acid at pH 10. It indicated enlargement of the particle size which was confirmed by the dynamic light scattering (DLS) measurements. Interestingly, the addition of 100 μM selenious acid at pH 6 resulted in a 6-fold enhancement of the red emission (λ_max = 617 nm) of the CdS QDs. The particle size enlargement of CdS was due to an electrostatic interaction between selenious acid and QD stabilizer cysteine. The 6-fold fluorescence enhancement was of the CdS QDs was explained on the basis of hydrogen-bonding interaction between selenious acid and cysteine. The fluorescence-based method was applied for the sensing of selenious acid at pH 6.

Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors

Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.

Enhancing the luminescence efficiency of silicon-nanocrystals by interaction with H+ ions

The emission of silicon nanocrystals (Si-NCs), synthesized by pulsed laser ablation in water, was investigated on varying the pH of the solution. These samples emit μs decaying orange photoluminescence (PL) associated with radiative recombination of quantum-confined excitons. Time-resolved spectra reveal that both the PL intensity and the lifetime increase by a factor of ∼20 when the pH decreases from 10 to 1 thus indicating that the emission quantum efficiency increases by inhibiting nonradiative decay rates. Infrared (IR) absorption and electron paramagnetic resonance (EPR) experiments allow addressing the origin of defects on which the excitons nonradiatively recombine. The linear correlation between the PL and the growth of SiH groups demonstrates that H+ ions passivate the nonradiative defects that are located in the interlayer between the Si-NC core and the amorphous SiO2 shell.

Controlled Zn1−xNixO nanostructures for an excellent humidity sensor and a plausible sensing mechanism

A Freundlich adsorption isotherm model confirms a plausible humidity sensing mechanism when using wet chemically prepared Zn_1−xNi_xO nanostructures.

Inkjet-printed optoelectronics

Inkjet printing is a powerful and cost-effective technique for deposition of liquid inks with high accuracy, which is not only of great significance for graphic applications but also has enormous potential for the direct printing of optoelectronic devices. This review highlights a comprehensive overview of the progress that has been made in optoelectronics fabrication by the inkjet printing technique. The first part briefly covers the droplet-generation process in the nozzles of printheads and the physical properties affecting droplet formation and the profiles of the printed patterns. The second section outlines the recent activities related to applications of inkjet printing in optoelectronics fabrication including solar cells, light-emitting diodes, photodetectors and transparent electrodes. In each application field, the challenges with the inkjet printing process and the possible solutions are discussed before a few remarks. In the last section, a brief summary on the progress of inkjet printing fabrication of optoelectronics and an outlook for future research effort are presented.

Large-area zinc oxide nanorod arrays templated by nanoimprint lithography: control of morphologies and optical properties

Vertically aligned, highly ordered, large area arrays of nanostructures are important building blocks for multifunctional devices. Here, ZnO nanorod arrays are selectively synthesized on Si substrates by a solution method within patterns created by nanoimprint lithography. The growth modes of two dimensional nucleation-driven wedding cakes and screw dislocation-driven spirals are inferred to determine the top end morphologies of the nanorods. Sub-bandgap photoluminescence of the nanorods is greatly enhanced by the manipulation of the hydrogen donors via a post-growth thermal treatment. Lasing behavior is facilitated in the nanorods with faceted top ends formed from wedding cakes growth mode. This work demonstrates the control of morphologies of oxide nanostructures in a large scale and the optimization of the optical performance.

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

NMR Observation of Mobile Protons in Proton-Implanted ZnO Nanorods

The diffusion properties of H(+) in ZnO nanorods are investigated before and after 20 MeV proton beam irradiation by using (1)H nuclear magnetic resonance (NMR) spectroscopy. Herein, we unambiguously observe that the implanted protons occupy thermally unstable site of ZnO, giving rise to a narrow NMR line at 4.1 ppm. The activation barrier of the implanted protons was found to be 0.46 eV by means of the rotating-frame spin-lattice relaxation measurements, apparently being interstitial hydrogens. High-energy beam irradiation also leads to correlated jump diffusion of the surface hydroxyl group of multiple lines at ~1 ppm, implying the presence of structural disorder at the ZnO surface.

Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors

Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.

Structure and properties of Co-doped ZnO films prepared by thermal oxidization under a high magnetic field

The effect of a high magnetic field applied during oxidation on the structure, optical transmittance, resistivity, and magnetism of cobalt (Co)-doped zinc oxide (ZnO) thin films prepared by oxidizing evaporated Zn/Co bilayer thin films in open air was studied. The relationship between the structure and properties of films oxidized with and without an applied magnetic field was analyzed. The results show that the high magnetic field obviously changed the structure and properties of the Co-doped ZnO films. The Lorentz force of the high magnetic field suppressed the oxidation growth on nanowhiskers. As a result, ZnO nanowires were formed without a magnetic field, whereas polyhedral particles formed under a 6 T magnetic field. This morphology variation from dendrite to polyhedron caused the transmittance below 1,200 nm of the film oxidized under a magnetic field of 6 T to be much lower than that of the film oxidized without a magnetic field. X-ray photoemission spectroscopy indicated that the high magnetic field suppressed Co substitution in the ZnO lattice, increased the concentration of oxygen vacancies, and changed the chemical state of Co. The increased concentration of oxygen vacancies affected the temperature dependence of the resistivity of the film oxidized under a magnetic field of 6 T compared with that of the film oxidized without a magnetic field. The changes of oxygen vacancy concentration and Co state caused by the application of the high magnetic field also increase the ferromagnetism of the film at room temperature. All of these results indicate that a high magnetic field is an effective tool to modify the structure and properties of ZnO thin films.

Electron field emission enhancement of hybrid Cu/CuO nanowires fabricated by rapid thermal reduction of CuO nanowires

CuO nanowires (NWs) were grown via the thermal oxidation of Cu film deposited on a CuO/glass template.

Doped ZnO 1D nanostructures: synthesis, properties, and photodetector application

In the past decades, the doping of ZnO one-dimensional nanostructures has attracted a great deal of attention due to the variety of possible morphologies, large surface-to-volume ratios, simple and low cost processing, and excellent physical properties for fabricating high-performance electronic, magnetic, and optoelectronic devices. This article mainly concentrates on recent advances regarding the doping of ZnO one-dimensional nanostructures, including a brief overview of the vapor phase transport method and hydrothermal method, as well as the fabrication process for photodetectors. The dopant elements include B, Al, Ga, In, N, P, As, Sb, Ag, Cu, Ti, Na, K, Li, La, C, F, Cl, H, Mg, Mn, S, and Sn. The various dopants which act as acceptors or donors to realize either p-type or n-type are discussed. Doping to alter optical properties is also considered. Lastly, the perspectives and future research outlook of doped ZnO nanostructures are summarized.

Defects in chemically synthesized and thermally processed ZnO nanorods: implications for active layer properties in dye-sensitized solar cells

We have carried out the effect of post annealing temperatures on the performance of solution-grown ZnO rods as photoanodes in dye-sensitized solar cells. Keeping our basic objective of exploring the effect of native defects on the performance of DSSC, we have synthesized ZnO rods having length in the range of 2-5 μm by a modified sonication-induced precipitation technique. We performed extensive characterization on the samples annealed at various temperatures and confirmed that annealing at 300 °C results in ZnO rods with minimum native defects that have been identified as doubly ionized oxygen vacancies. The electron paramagnetic resonance measurements on the samples, on the other hand, confirmed the presence of shallow donors in the low temperature annealed samples. We also carried out electrochemical impedance measurements to understand the transport properties at different interfaces in the solar cell assembly. We could conclude that solution-processed ZnO rods annealed at 300 °C are better suited for fabricating DSSC with improved efficiency (1.57%), current density (5.11 mA/cm(2)), and fill factor (45.29%). On the basis of our results, we were able to establish a close connection between the defects in the metal oxide electron transporting nano system and the DSSC performance.

Highly crystalline urchin-like structures made of ultra-thin zinc oxide nanowires

Synthesis of ultra-thin, well-aligned, monocrystalline, highly luminescent ZnO nanowires on polystyrene beads as templates.

Aluminum-doped zinc oxide nanoparticles with tunable near-infrared absorption/reflectance by a simple solvothermal process

Aluminum-doped ZnO nanoparticles with tunable NIR absorption.

The effect of nitridation temperature on the structural, optical and electrical properties of GaN nanoparticles

Nitridation at high temperature enhances the crystalline and optical quality of GaN nanoparticles synthesized by a novel chemical co-precipitation method.

Role of spectator ions in influencing the properties of dopant-free ZnO nanocrystals

The effect of defects on the functional properties of dopant-free ZnO nanocrystals has been established by recording their luminescence and magnetism.

Magnetic anisotropy induced in NiCo granular nanostructures by ZnO nanorods deposited on a polymer substrate

Magnetic hetero-nanostructures were deposited on a polymer substrate by a two-step method. Magnetic anisotropy was found to be induced in the CoNi nanostructures by ZnO nanorods deposited on the flexible substrate.

Low threshold amplified spontaneous emission from tin oxide quantum dots: a instantiation of dipole transition silence semiconductors

Direct bandgap semiconductors, such as In2O3, Cu2O, and SnO2, have enormous applications in photochemistry, photovoltaics, and optoelectronics. Due to the same parity of conduction and valence bands, the dipole transition is silent in these direct bandgap semiconductors. The low band-to-band transition efficiency prevents them from high intensity light emission or absorption. Here, we report the fabrication of SnO2 quantum dots (QDs) with sizes less than the exciton Bohr radius by a facile "top-down" strategy based on laser fragmentation of SnO in water. The SnO2 QDs shows exciton emission at ∼300 nm with a high quantum yield of ~17%. Amplified spontaneous exciton emission is also achieved from a thin layer of SnO2 QDs dispersed in PEG400 on a quartz substrate. Therefore, we have shown that SnO2 QDs can be a potential luminescent material suitable for the realization of ultraviolet B lasing devices.

Surface passivation effect on the photoluminescence of ZnO nanorods

We report an investigation of the impact of surface passivation on the optical properties of ZnO nanorods. Al2O3 coating and hydrogen plasma treatment were used to passivate the surface states. It was found that Al2O3 coating led to the suppression of the deep level emissions, while hydrogen plasma treatment completely quenched the deep level emissions. It was confirmed that the surface states of the as-grown ZnO nanorod arrays indeed contributed to the deep level emissions. Evidence was also provided that shows surface states have a greater impact on the green emission than the orange emission and may cause the negative thermal quenching behavior. Moreover, the passivation effect was confirmed by the changes of the O 1s and Zn 2p spectra.