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Kahraman A, Socie E, Nazari M, Kazazis D, Buldu-Akturk M, Kabanova V, Biasin E, Smolentsev G, Grolimund D, Erdem E, Moser JE, Cannizzo A, Bacellar C, Milne C. Tailoring p-Type Behavior in ZnO Quantum Dots through Enhanced Sol-Gel Synthesis: Mechanistic Insights into Zinc Vacancies. J Phys Chem Lett 2024; 15:1755-1764. [PMID: 38324709 PMCID: PMC10875662 DOI: 10.1021/acs.jpclett.3c03519] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 01/18/2024] [Accepted: 01/19/2024] [Indexed: 02/09/2024]
Abstract
The synthesis and control of properties of p-type ZnO is crucial for a variety of optoelectronic and spintronic applications; however, it remains challenging due to the control of intrinsic midgap (defect) states. In this study, we demonstrate a synthetic route to yield colloidal ZnO quantum dots (QD) via an enhanced sol-gel process that effectively eliminates the residual intermediate reaction molecules, which would otherwise weaken the excitonic emission. This process supports the creation of ZnO with p-type properties or compensation of inherited n-type defects, primarily due to zinc vacancies under oxygen-rich conditions. The in-depth analysis of carrier recombination in the midgap across several time scales reveals microsecond carrier lifetimes at room temperature which are expected to occur via zinc vacancy defects, supporting the promoted p-type character of the synthesized ZnO QDs.
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Affiliation(s)
| | - Etienne Socie
- École
polytechnique fédérale de Lausanne (EPFL), Rte Cantonale, 1015 Lausanne, Switzerland
| | - Maryam Nazari
- Institute
of Applied Physics, University of Bern, Sidlerstrasse 5, 3012 Bern, Switzerland
| | | | - Merve Buldu-Akturk
- Faculty
of Engineering and Natural Sciences, Sabanci
University, Tuzla 34956 Istanbul, Turkey
| | | | - Elisa Biasin
- Physical
Sciences Division, Pacific Northwest National
Laboratory, Richland, Washington 99352, United States
| | | | | | - Emre Erdem
- Faculty
of Engineering and Natural Sciences, Sabanci
University, Tuzla 34956 Istanbul, Turkey
| | - Jacques E. Moser
- École
polytechnique fédérale de Lausanne (EPFL), Rte Cantonale, 1015 Lausanne, Switzerland
| | - Andrea Cannizzo
- Institute
of Applied Physics, University of Bern, Sidlerstrasse 5, 3012 Bern, Switzerland
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2
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Banerjee P, Parasuram S, Kumar S, Bose S. Graphene oxide-mediated thermo-reversible bonds and in situ grown nano-rods trigger 'self-healable' interfaces in carbon fiber laminates. NANOSCALE 2022; 14:9004-9020. [PMID: 35700545 DOI: 10.1039/d2nr01234k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Carbon fiber reinforced epoxy (CFRE) laminate structures have emerged as futuristic materials having surpassed metals in strength and durability. The interfacial chemistry determines the mechanical performance of such laminates. In this study, a unique approach was adopted wherein the alternate layers of the carbon fiber (CF) mat were grown in situ with ZnO nano-rods and modified with bis-maleimide (BMI), and epoxy resin containing 0.2 or 0.5 wt% graphene oxide (GO) was infused using conventional VARTM technology to enhance the mechanical interlocking of epoxy with the fiber as well as to impart self-healing properties to the laminate. While ZnO rods offer surface roughness thereby facilitating better wetting of epoxy, the Diels-Alder thermo-reversible bonds between BMI and GO facilitate self-healing properties besides improving the interfacial adhesion between epoxy and CF. The rationale behind this work is to synergistically improve the interface-dominated mechanical properties like interlaminar shear strength (ILSS) while maintaining or even improving fiber-dominated properties like flexural strength (FS) as well as imparting considerable recovery in strength post the self-healing cycle. The laminates after this treatment (having 0.5 wt% GO) indeed exhibited 46% improvement in FS and 33% improvement in ILSS properties as well as an ILSS recovery of 70%. The surface analysis suggests that ZnO nano-rods offer surface roughness that helps in the wettability of the matrix on the fibers. In addition, the 2D and 3D representative volume analysis (RVE) model was established to identify the load transfer behaviour in the ZnO-CF-epoxy interface in the microscale reference region. The fractographic analysis confirmed that rigid ZnO nano-rods allowed better matrix adhesion resulting in improved mechanical performance.
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Affiliation(s)
- Poulami Banerjee
- Department of Materials Engineering, Indian Institute of Science, Bangalore - 560012, India.
| | - Sampath Parasuram
- Department of Materials Engineering, Indian Institute of Science, Bangalore - 560012, India.
| | - S Kumar
- Department of Materials Engineering, Indian Institute of Science, Bangalore - 560012, India.
| | - Suryasarathi Bose
- Department of Materials Engineering, Indian Institute of Science, Bangalore - 560012, India.
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3
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Parmar DH, M Pina J, Zhu T, Vafaie M, Atan O, Biondi M, Najjariyan AM, Hoogland S, Sargent EH. Controlled Crystal Plane Orientations in the ZnO Transport Layer Enable High-Responsivity, Low-Dark-Current Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200321. [PMID: 35230725 DOI: 10.1002/adma.202200321] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 02/21/2022] [Indexed: 06/14/2023]
Abstract
Colloidal quantum dots (CQD) have emerged as attractive materials for infrared (IR) photodetector (PD) applications because of their tunable bandgaps and facile processing. Presently, zinc oxide is the electron-transport layer (ETL) of choice in CQD PDs; however, ZnO relies on continuous ultraviolet (UV) illumination to remove adsorbed oxygen and maintain high external quantum efficiency (EQE), speed, and photocurrent. Here, it is shown that ZnO is dominated by electropositive crystal planes which favor excessive oxygen adsorption, and that this leads to a high density of trap states, an undesired shift in band alignment, and consequent poor performance. Over prolonged operation without UV exposure, oxygen accumulates at the electropositive planes, trapping holes and degrading performance. This problem is addressed by developing an electroneutral plane composition at the ZnO surface, aided by atomic layer deposition (ALD) as the means of materials processing. It is found that ALD ZnO has 10× lower binding energy for oxygen than does conventionally deposited ZnO. IR CQD PDs made with this ETL do not require UV activation to maintain low dark current and high EQE.
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Affiliation(s)
- Darshan H Parmar
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Joao M Pina
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Tong Zhu
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Maral Vafaie
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Ozan Atan
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Margherita Biondi
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Amin M Najjariyan
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Sjoerd Hoogland
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
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4
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Bah M, Tlemcani TS, Boubenia S, Justeau C, Vivet N, Chauveau JM, Jomard F, Nadaud K, Poulin-Vittrant G, Alquier D. Assessing the electrical activity of individual ZnO nanowires thermally annealed in air. NANOSCALE ADVANCES 2022; 4:1125-1135. [PMID: 36131772 PMCID: PMC9417669 DOI: 10.1039/d1na00860a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2021] [Accepted: 12/31/2021] [Indexed: 06/15/2023]
Abstract
ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications owing to their tunable electron concentration via structural and surface defect engineering. A 2D electrical profiling of these defects is necessary to understand their restructuring dynamics during engineering processes. Our work proposes the exploration of individual ZnO NWs, dispersed on a SiO2/p++-Si substrate without any embedding matrix, along their axial direction using scanning capacitance microscopy (SCM), which is a useful tool for 2D carrier profiling. ZnO NWs are hydrothermally grown using 0-20 mM ammonium hydroxide (NH4OH), one of the reactants of the hydrothermal synthesis, and then annealed in a tube oven at 350 °C/1.5-15 h and 450 °C/15 h. While the as-grown ZnO NWs are highly conductive, the annealed ones exhibit significant SCM data with a high signal-to-noise ratio and temperature-dependent uniformity. The SCM signal of ZnO NWs is influenced by both their reduced dimensionality and the electron screening degree inside them. The electrical activity of ZnO NWs is only observed below a critical defect concentration that depends on the annealing temperature. Optimal SCM signals of 200 and 147 mV are obtained for samples with 0 and 20 mM NH4OH, respectively, and annealed at 350 °C/15 h. The corresponding electron concentrations of 3.27 × 1018 and 4.58 × 1018 cm-3 were estimated from the calibration curve, respectively. While thermal treatment in air of ZnO NWs is an effective approach to tune the defect density, 2D electrical mapping enables identifying their optimal electrical characteristics, which could help to boost the performance of final devices exploiting their coupled semiconducting-piezoelectric properties.
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Affiliation(s)
- Micka Bah
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | | | - Sarah Boubenia
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | - Camille Justeau
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | - Nicolas Vivet
- STMicroelectronics Tours 10 Rue Thalès de Milet 37100 Tours France
| | - Jean-Michel Chauveau
- Université Cote d'azur, CNRS, CRHEA Rue B. Gregory F-06560 Valbonne France
- Université Paris-Saclay, Université Versailles-Saint-Quentin, CNRS, GEMAC 78035 Versailles France
| | - François Jomard
- Université Paris-Saclay, Université Versailles-Saint-Quentin, CNRS, GEMAC 78035 Versailles France
| | - Kevin Nadaud
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
| | | | - Daniel Alquier
- GREMAN UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire 37071 Tours France
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5
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Zhang X, Shen W, Bu F, Wang Y, Yu X, Zhang W, Wang J, Belfiore LA, Tang J. Strong enhanced efficiency of natural alginate for polymer solar cells through modification of the ZnO cathode buffer layer. APPLIED OPTICS 2020; 59:9042-9050. [PMID: 33104594 DOI: 10.1364/ao.398545] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2020] [Accepted: 09/02/2020] [Indexed: 06/11/2023]
Abstract
Sodium alginate (SA), as a natural marine biopolymer, possesses many merits such as super-easy accessibility from the ocean, low cost, nontoxicity, and no synthesis for practical application. For the chemical structure, SA has enough lone electron pairs of oxygen atoms in the backbone and short branched chains, which is expected to passivate oxygen vacancy on the surface of the ZnO cathode buffer layer to improve the photovoltaic performance. Herein, it was applied to modify the surface trap of the ZnO layer in fullerene and non-fullerene polymer solar cells (PSCs). The defects were successfully reduced, and the trap-assisted recombination decreased. In a PTB7-Th:PC71BM system, power conversion efficiency (PCE) was improved from 8.06% to 9.36%. In the PM6:IT-4F system, PCE was enhanced from 12.13% to 13.08%. The addition of SA did not destroy the stability of the device. Overall, this work demonstrates the potential for preparing devices with long-time stability and industrial manufacture of PSCs by using biological materials in the future.
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6
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Miao TJ, Tang J. Characterization of charge carrier behavior in photocatalysis using transient absorption spectroscopy. J Chem Phys 2020; 152:194201. [PMID: 33687236 DOI: 10.1063/5.0008537] [Citation(s) in RCA: 40] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022] Open
Abstract
Photocatalysis is a promising sustainable method to generate solar fuels for the future, as well as having other applications such as water/air purification. However, the performance of photocatalysts is often limited by poor charge carrier dynamics. To improve charge carrier dynamics, it is necessary to characterize and understand charge carrier behavior in photocatalytic systems. This critical review will present Transient Absorption Spectroscopy (TAS) as a useful technique for understanding the behavior of photoexcited charges in semiconductor photocatalysts. The role of TAS amongst other techniques for characterizing charge carrier behavior will be outlined. Basic principles behind TAS will be introduced, and interpretation of TAS spectra and kinetics will be discussed in the context of exemplar literature. It will be demonstrated that TAS is a powerful technique to obtain fundamental understanding of the behavior of photoexcited charges.
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Affiliation(s)
- Tina Jingyan Miao
- Department of Chemical Engineering, University College London (UCL), WC1E 7JE London, United Kingdom
| | - Junwang Tang
- Department of Chemical Engineering, University College London (UCL), WC1E 7JE London, United Kingdom
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7
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Purbayanto MAK, Rusydi A, Darma Y. The effect of crystallinity on the surface modification and optical properties of ZnO thin films. Phys Chem Chem Phys 2020; 22:2010-2018. [PMID: 31903459 DOI: 10.1039/c9cp05464b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We have studied the effects of crystallinity on the emergence of porous morphology and strong green emission in ZnO thin films after H2 annealing treatment. The unique multiple-stacked porous structure is observed after performing H2 annealing treatment on the film with low crystallinity. However, the annealed high-crystallinity film exhibits surface morphology with a shallow porous structure, as revealed by SEM images. To study the effects of these unique porous structures on the optical properties, photoluminescence (PL) spectroscopy, Raman spectroscopy, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy (XPS) are conducted. The multiple-stacked porous structure produces strong green emission as compared to the shallow porous structure centered at 2.5 eV, as detected by PL. Here, the green emission originates from the electronic transition related to the oxygen vacancy (VO). XPS spectra show that the high density of VO located on the multiple-stacked porous surface is much higher as compared to that for the shallow porous structure due to a high surface-to-volume ratio. The results show that the multiple-stacked porous structure has the potential to enhance the functionality of ZnO for applications in light-emitting.
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Affiliation(s)
| | - Andrivo Rusydi
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603, Singapore
| | - Yudi Darma
- Department of Physics, Institut Teknologi Bandung, Ganesha 10, Bandung 40132, Indonesia.
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8
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Alwadai N, Ajia IA, Janjua B, Flemban TH, Mitra S, Wehbe N, Wei N, Lopatin S, Ooi BS, Roqan IS. Catalyst-Free Vertical ZnO-Nanotube Array Grown on p-GaN for UV-Light-Emitting Devices. ACS APPLIED MATERIALS & INTERFACES 2019; 11:27989-27996. [PMID: 31343859 DOI: 10.1021/acsami.9b06195] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
One-dimensional (1D) structures-based UV-light-emitting diode (LED) has immense potential for next-generation applications. However, several issues related to such devices must be resolved first, such as expensive material and growth methods, complicated fabrication process, efficiency droop, and unavoidable metal contamination due to metal catalyst that reduces device efficiency. To overcome these obstacles, we have developed a novel growth method for obtaining a high-quality hexagonal, well-defined, and vertical 1D Gd-doped n-ZnO nanotube (NT) array deposited on p-GaN films and other substrates by pulsed laser deposition. By adopting this approach, the desired high optical and structural quality is achieved without utilizing metal catalyst. Transmission electron microscopy measurements confirm that gadolinium dopants in the target form a transparent in situ interface layer to assist in vertical NT formation. Microphotoluminescence (PL) measurements of the NTs reveal an intense ZnO band edge emission without a defect band, indicating high quality. Carrier dynamic analysis via time-resolved PL confirms that the emission of n-ZnO NTs/p-GaN LED structure is dominated significantly by the radiative recombination process without efficiency droop when high carrier density is injected optically. We developed an electrically pumped UV Gd-doped ZnO NTs/GaN LED as a proof of concept, demonstrating its high internal quantum efficiency (>65%). The demonstrated performance of this cost-effective UV LED suggests its potential application in large-scale device production.
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Affiliation(s)
- Norah Alwadai
- Department of Physics, College of Sciences , Princess Nourah Bint Abdulrahman University (PNU) , Riyadh 11671 , Saudi Arabia
| | | | | | - Tahani H Flemban
- Department of Physics, College of Science , Imam Abdulrahman Bin Faisal University (IAU) , Dammam 31441 , Saudi Arabia
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9
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Periyannan S, Manceriu L, Nguyen ND, Klein A, Jaegermann W, Colson P, Henrist C, Cloots R. Influence of ZnO Surface Modification on the Photocatalytic Performance of ZnO/NiO Thin Films. Catal Letters 2019. [DOI: 10.1007/s10562-019-02781-z] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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10
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Li B, Wei W, Yan X, Zhang X, Liu P, Luo Y, Zheng J, Lu Q, Lin Q, Ren X. Mimicking synaptic functionality with an InAs nanowire phototransistor. NANOTECHNOLOGY 2018; 29:464004. [PMID: 30246691 DOI: 10.1088/1361-6528/aadf63] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
We demonstrate a nanowire (NW) phototransistor with synaptic behavior based on inherent persistent photoconductivity. The device is comprised of a single crystalline InAs NW, covered by a native indium oxide layer acting as the photogating layer (PGL). In the negative photoresponse range, the device mimics synaptic neuromorphic behaviors of short-term plasticity, long-term plasticity (LTP), and paired-pulse facilitation. Moreover, the transition from short-term to LTP is observed as the stimulus intensity increases, behaving in accord with the feature of cooperativity. The synaptic behaviors of the device are attributed to the photo-generated electrons trapped/detrapped in the PGL. This NW-based photonic synaptic device would find promising applications in neuromorphic systems and networks.
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Affiliation(s)
- Bang Li
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
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11
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Fang X, Wei Z, Fang D, Chu X, Tang J, Wang D, Wang X, Li J, Li Y, Yao B, Wang X, Chen R. Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment. ACS OMEGA 2018; 3:4412-4417. [PMID: 31458667 PMCID: PMC6641701 DOI: 10.1021/acsomega.7b01783] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2017] [Accepted: 03/19/2018] [Indexed: 06/10/2023]
Abstract
GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed for GaSb. The surface states and optical properties of GaSb were found to depend on the N passivation conditions. Varying the plasma power during passivation modified the chemical bonds of the GaSb surface, which influenced the emission efficiency. X-ray photoelectron spectroscopy was used to quantitatively demonstrate that the GaSb oxide layer was removed via treatment at a plasma power of 100 W. After nitrogen passivation, the samples exhibited enhanced emission. Free exciton emission was the main factor leading to this enhanced luminescence. An energy band model for the surface states is used to explain the carrier radiative recombination processes. This nitrogen passivation approach can suppress surface states and improve the surface quality of GaSb-based materials and devices. The enhancement in exciton-related emission by this simple approach is important for improving the performance of GaSb-based optoelectronic devices.
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Affiliation(s)
- Xuan Fang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Zhipeng Wei
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dan Fang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xueying Chu
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jilong Tang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dengkui Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xinwei Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jinhua Li
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Yongfeng Li
- Key
Laboratory of Physics and Technology for Advanced Batteries, Ministry
of Education, College of Physics, Jilin
University, Changchun 130012, P. R. China
| | - Bin Yao
- Key
Laboratory of Physics and Technology for Advanced Batteries, Ministry
of Education, College of Physics, Jilin
University, Changchun 130012, P. R. China
| | - Xiaohua Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Rui Chen
- Department
of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, P. R. China
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12
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Xie YP, Yang Y, Wang G, Liu G. Oxygen vacancies promoted interfacial charge carrier transfer of CdS/ZnO heterostructure for photocatalytic hydrogen generation. J Colloid Interface Sci 2017; 503:198-204. [DOI: 10.1016/j.jcis.2017.05.006] [Citation(s) in RCA: 76] [Impact Index Per Article: 10.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2017] [Revised: 04/28/2017] [Accepted: 05/03/2017] [Indexed: 10/19/2022]
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13
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Nazarkovsky M, Bogatyrov V, Czech B, Galaburda M, Wójcik G, Kolomys O, Strelchuk V, Malysheva M, Oranska O, Gun’ko V. Synthesis and properties of zinc oxide photocatalyst by high-temperature processing of resorcinol-formaldehyde/zinc acetate mixture. J Photochem Photobiol A Chem 2017. [DOI: 10.1016/j.jphotochem.2016.10.040] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
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14
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Wahyuono RA, Hermann-Westendorf F, Dellith A, Schmidt C, Dellith J, Plentz J, Schulz M, Presselt M, Seyring M, Rettenmeyer M, Dietzek B. Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures. Chem Phys 2017. [DOI: 10.1016/j.chemphys.2016.12.002] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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15
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Marusak KE, Feng Y, Eben CF, Payne ST, Cao Y, You L, Zauscher S. Cadmium sulphide quantum dots with tunable electronic properties by bacterial precipitation. RSC Adv 2016; 6:76158-76166. [PMID: 28435671 DOI: 10.1039/c6ra13835g] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We present a new method to fabricate semiconducting, transition metal nanoparticles (NPs) with tunable bandgap energies using engineered Escherichia coli. These bacteria overexpress the Treponema denticola cysteine desulfhydrase gene to facilitate precipitation of cadmium sulphide (CdS) NPs. Analysis with transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy reveal that the bacterially precipitated NPs are agglomerates of mostly quantum dots, with diameters that can range from 3 to 15 nm, embedded in a carbon-rich matrix. Additionally, conditions for bacterial CdS precipitation can be tuned to produce NPs with bandgap energies that range from quantum-confined to bulk CdS. Furthermore, inducing precipitation at different stages of bacterial growth allows for control over whether the precipitation occurs intra- or extracellularly. This control can be critically important in utilizing bacterial precipitation for the environmentally-friendly fabrication of functional, electronic and catalytic materials. Notably, the measured photoelectrochemical current generated by these NPs is comparable to values reported in the literature and higher than that of synthesized chemical bath deposited CdS NPs. This suggests that bacterially precipitated CdS NPs have potential for applications ranging from photovoltaics to photocatalysis in hydrogen evolution.
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Affiliation(s)
- K E Marusak
- Department of Mechanical Engineering & Materials Science, 144 Hudson Hall, Box 90300 Durham, NC 27708, United States
| | - Y Feng
- Department of Mechanical Engineering & Materials Science, 144 Hudson Hall, Box 90300 Durham, NC 27708, United States
| | - C F Eben
- Department of Biomedical Engineering, Duke University, 101 Science Drive, Durham NC 27708, United States
| | - S T Payne
- Department of Biomedical Engineering, Duke University, 101 Science Drive, Durham NC 27708, United States
| | - Y Cao
- Department of Biomedical Engineering, Duke University, 101 Science Drive, Durham NC 27708, United States
| | - L You
- Department of Biomedical Engineering, Duke University, 101 Science Drive, Durham NC 27708, United States
| | - S Zauscher
- Department of Mechanical Engineering & Materials Science, 144 Hudson Hall, Box 90300 Durham, NC 27708, United States
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16
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Lee KM, Lai CW, Ngai KS, Juan JC. Recent developments of zinc oxide based photocatalyst in water treatment technology: A review. WATER RESEARCH 2016; 88:428-448. [PMID: 26519627 DOI: 10.1016/j.watres.2015.09.045] [Citation(s) in RCA: 773] [Impact Index Per Article: 96.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2015] [Revised: 09/28/2015] [Accepted: 09/28/2015] [Indexed: 05/19/2023]
Abstract
Today, a major issue about water pollution is the residual dyes from different sources (e.g., textile industries, paper and pulp industries, dye and dye intermediates industries, pharmaceutical industries, tannery and craft bleaching industries, etc.), and a wide variety of persistent organic pollutants have been introduced into our natural water resources or wastewater treatment systems. In fact, it is highly toxic and hazardous to the living organism; thus, the removal of these organic contaminants prior to discharge into the environment is essential. Varieties of techniques have been employed to degrade those organic contaminants and advanced heterogeneous photocatalysis involving zinc oxide (ZnO) photocatalyst appears to be one of the most promising technology. In recent years, ZnO photocatalyst have attracted much attention due to their extraordinary characteristics. The high efficiency of ZnO photocatalyst in heterogeneous photocatalysis reaction requires a suitable architecture that minimizes electron loss during excitation state and maximizes photon absorption. In order to further improve the immigration of photo-induced charge carriers during excitation state, considerable effort has to be exerted to further improve the heterogeneous photocatalysis under UV/visible/solar illumination. Lately, interesting and unique features of metal doping or binary oxide photocatalyst system have gained much attention and became favourite research matter among various groups of scientists. It was noted that the properties of this metal doping or binary oxide photocatalyst system primarily depend on the nature of the preparation method and the role of optimum dopants content incorporated into the ZnO photocatalyst. Therefore, this paper presents a critical review of recent achievements in the modification of ZnO photocatalyst for organic contaminants degradation.
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Affiliation(s)
- Kian Mun Lee
- Nanotechnology & Catalysis Research Centre (NANOCAT), 3rd Floor, Block A, Institute of Postgraduate Studies (IPS), University of Malaya, 50603 Kuala Lumpur, Malaysia.
| | - Chin Wei Lai
- Nanotechnology & Catalysis Research Centre (NANOCAT), 3rd Floor, Block A, Institute of Postgraduate Studies (IPS), University of Malaya, 50603 Kuala Lumpur, Malaysia
| | - Koh Sing Ngai
- Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor Darul Ehsan, Malaysia
| | - Joon Ching Juan
- Nanotechnology & Catalysis Research Centre (NANOCAT), 3rd Floor, Block A, Institute of Postgraduate Studies (IPS), University of Malaya, 50603 Kuala Lumpur, Malaysia; School of Science, Monash University, Sunway Campus, Jalan Lagoon Selatan, Bandar Sunway 46150, Malaysia.
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Li X, Feng S, Liu S, Li Z, Wang L, Zhan Z, Lu W. Fabrication of ZnO nanowires array with nanodiamond as reductant. RSC Adv 2016. [DOI: 10.1039/c6ra12398h] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The availability of well-aligned high quality ZnO nanowires will extend the potential applications of such materials.
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Affiliation(s)
- Xin Li
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Sciences
- Chongqing
- PR China
| | - Shuanglong Feng
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Sciences
- Chongqing
- PR China
| | - Shuangyi Liu
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Sciences
- Chongqing
- PR China
| | - Zhenhu Li
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Sciences
- Chongqing
- PR China
| | - Liang Wang
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Sciences
- Chongqing
- PR China
| | - Zhaoyao Zhan
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Sciences
- Chongqing
- PR China
| | - Wenqiang Lu
- Chongqing Key Laboratory of Multi-Scale Manufacturing Technology
- Chongqing Institute of Green and Intelligent Technology
- Chinese Academy of Sciences
- Chongqing
- PR China
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18
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Design and Applications of Nanomaterial-Based and Biomolecule-Based Nanodevices and Nanosensors. ACTA ACUST UNITED AC 2014. [DOI: 10.1007/978-94-017-8848-9_3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/16/2023]
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Su Y, Xin X, Wang Y, Wang T, Wang X. Unprecedented catalytic performance in disordered nickel niobate through photo-synergistic promotion. Chem Commun (Camb) 2014; 50:4200-2. [DOI: 10.1039/c3cc49825e] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Abstract
AbstractSurfaces and interfaces play a critical role in determining properties and functions of nanomaterials, in many cases dominating bulk properties, owing to the large surface- and interface-area-to-volume ratio. Using Si nanomembranes, a well-controlled two-dimensional single-crystalline semiconductor, as a prototype system, we discuss how surfaces and interfaces influence electrical transport properties at the nanoscale. We show that electronic conduction in Si nanomembranes is not determined by bulk dopants but by the interplay of surface and interface electronic structures with the “bulk” band structure of the thin Si membrane. Additionally, we describe our recent experimental results on the control of highly ordered molecular structures on Si surfaces, which is of intense interest for the integration of ordered organic thin films in silicon-based electronics. This could also potentially lead to the rational design of Si nanostructures with controlled properties through regulation of the surface chemistry.
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Pan X, Yang MQ, Fu X, Zhang N, Xu YJ. Defective TiO2 with oxygen vacancies: synthesis, properties and photocatalytic applications. NANOSCALE 2013; 5:3601-14. [PMID: 23532413 DOI: 10.1039/c3nr00476g] [Citation(s) in RCA: 768] [Impact Index Per Article: 69.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Titanium dioxide (TiO2), as an important semiconductor metal oxide, has been widely investigated in the field of photocatalysis. The properties of TiO2, including its light absorption, charge transport and surface adsorption, are closely related to its defect disorder, which in turn plays a significant role in the photocatalytic performance of TiO2. Among all the defects identified in TiO2, oxygen vacancy is one of the most important and is supposed to be the prevalent defect in many metal oxides, which has been widely investigated both by theoretical calculations and experimental characterizations. Here, we give a short review on the existing strategies for the synthesis of defective TiO2 with oxygen vacancies, and the defect related properties of TiO2 including structural, electronic, optical, dissociative adsorption and reductive properties, which are intimately related to the photocatalytic performance of TiO2. In particular, photocatalytic applications with regard to defective TiO2 are outlined. In addition, we offer some perspectives on the challenge and new direction for future research in this field. We hope that this tutorial minireview would provide some useful contribution to the future design and fabrication of defective semiconductor-based nanomaterials for diverse photocatalytic applications.
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Affiliation(s)
- Xiaoyang Pan
- State Key Laboratory Breeding Base of Photocatalysis, College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350002, PR China
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Arruda LB, Orlandi MO, Lisboa-Filho PN. Morphological modifications and surface amorphization in ZnO sonochemically treated nanoparticles. ULTRASONICS SONOCHEMISTRY 2013; 20:799-804. [PMID: 23274054 DOI: 10.1016/j.ultsonch.2012.11.013] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2012] [Revised: 11/24/2012] [Accepted: 11/24/2012] [Indexed: 06/01/2023]
Abstract
Application of nanoscale materials in photovoltaic and photocatalysis devices and photosensors are dramatically affected by surface morphology of nanoparticles, which plays a fundamental role in the understanding of the physical and chemical properties of nanoscale materials. Zinc oxide nanoparticles with an average size of 20nm were obtained by the use of a sonochemical technique. X-ray diffraction (XRD) associated to Rietveld refinements and transmission electron microscopy (TEM) were used to study structural and morphological characteristics of the samples. An amorphous shell approximately 10nm thick was observed in the ultrasonically treated sample, and a large reduction in particle size and changes in the lattice parameters were also observed.
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Affiliation(s)
- Larisa B Arruda
- POSMAT - Programa de Pós-Graduação em Ciência e Tecnologia de Materiais UNESP, Bauru, Brazil
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