Synthesis of MOF525/PEDOT Composites as Microelectrodes for Electrochemical Sensing of Dopamine

Dopamine (DA) is an important neurotransmitter responsible for the functions and activities of multiple systems in human. Electrochemical detection of DA has the advantages of fast analysis and cost-effectiveness, while a regular electrode probe is restricted to laboratory use because the probe size is too large to be suitable for an in vivo or in vitro analysis. In this study, we have developed porphyrin-based metal organic framework (MOF525) and poly(3,4-ethylenedioxythiophene) (PEDOT)-based composites to modify microelectrode for DA detection. Two types of PEDOT monomers with different functional groups were investigated in this study. By varying the monomer ratios, electrolyte concentrations, and electropolymerization temperature, it was found that the PEDOT monomer containing carboxylic group facilitated the formation of regular morphology during the electropolymerization process. The uniform morphology of the PEDOT promoted the electron transmission efficiency in the same direction, while the MOF525 provided a large reactive surface area for electrocatalysis of DA. Thus, the MOF525/PEDOT composite improved the sensitivity-to-noise ratio of DA signaling, where the sensitivity reached 11 nA/μM in a good linear range of 4–100 µM. In addition, porphyrin-based MOF could also increase the selectivity to DA against other common clinical interferences, such as ascorbic acid and uric acid. The as-synthesized microelectrode modified with MOF525/PEDOT in this study exhibited great potential in real time analysis.

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact

Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect.

A WORM type polymer electrical memory based on polyethersulfone with carbazole derivatives

A series of high-performance polyethersulfone, which had pendent carbazole moieties (Cz-PES 1–3), have been designed and successfully synthesized for an application in a write-once read-many type memory device as the active polymer layer. The memory performance can be tuned by changing the substituent in the Cz derivatives units. Cz-PES 3 with excellent thermal properties ( Tg = 185°C and Td = 378°C) exhibits the best memory performance. For Cz-PES 3-based device indium tin oxide/Cz-PES 3/aluminum, the turn-on voltage is 2.5 V and the ON/OFF current ratio is higher than 106. Moreover, the data can be maintained for longer than 3 × 105 s once written and can be read for more than 450 cycles under a reading voltage of 1.0 V at ambient conditions. Thus Cz-PES 3 can serve as an excellent memory material in the data storage field of next generation.

The effect of junction modes between backbones and side chains of polyimides on the stability of liquid crystal vertical alignment

Polyimides (PI-N9 and PI-N12) were synthesized from two kinds of functional diamines, whose junction modes between backbones and side chains were different. Side chains of PI-N9 were linked to the backbones with an ether bond spacer; and side chains of PI-N12 were directly linked to the backbones without any spacer. The PI alignment layer surfaces were investigated by atomic force microscopy, surface free energy measurements, X-ray photo-electron spectroscopy and polarized attenuated total reflection Fourier transformed infrared spectroscopy. It was found that PI-N9 lost the vertical alignment capability after high-strength rubbing, while PI-N12 could still induce liquid crystals (LCs) to align vertically under the same condition. The mechanism of the macroscopic molecular orientation of the PI surface is proposed. During the high-strength rubbing process, the side chain could rotate around the flexible ether bond which existed between the side chain and the main chain of PI-N9 and then fell over. Therefore, PI-N9 could not induce the vertical alignment of LCs anymore. But PI-N12 could keep LCs aligning vertically all the time, which proved that the stability of LC alignment induced by PI-N12 was better.

Polymer-based resistive memory materials and devices

Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability, and large capacity for data storage, polymer-based resistive memories have been a promising alternative or supplementary devices to conventional inorganic semiconductor-based memory technology, and attracted significant scientific interest as a new and promising research field. In this review, we first introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer-based resistive memory devices. Subsequently, the research progress concerning the use of single polymers or polymer composites as active materials for resistive memory devices has been summarized and discussed. In particular, we consider a rational approach to their design and discuss how to realize the excellent memory devices and understand the memory mechanisms. Finally, the current challenges and several possible future research directions in this field have also been discussed.