Metal Oxide-Related Dendritic Structures: Self-Assembly and Applications for Sensor, Catalysis, Energy Conversion and Beyond

In the past two decades, we have learned a great deal about self-assembly of dendritic metal oxide structures, partially inspired by the nanostructures mimicking the aesthetic hierarchical structures of ferns and corals. The self-assembly process involves either anisotropic polycondensation or molecular recognition mechanisms. The major driving force for research in this field is due to the wide variety of applications in addition to the unique structures and properties of these dendritic nanostructures. Our purpose of this minireview is twofold: (1) to showcase what we have learned so far about how the self-assembly process occurs; and (2) to encourage people to use this type of material for drug delivery, renewable energy conversion and storage, biomaterials, and electronic noses.

Memristive Behavior Enabled by Amorphous-Crystalline 2D Oxide Heterostructure

The emergence of memristive behavior in amorphous-crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few-nanometer amorphous Al₂ O₃ layers onto atomically thin single-crystalline ZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al₂ O₃ facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high-resistance state follows Poole-Frenkel emission, and in the the low-resistance state is fitted by the Mott-Gurney law. From the slope of the fitting curve, the mobility in the low-resistance state is estimated to be ≈2400 cm² V^-1 s^-1 , which is the highest value reported in semiconductor oxides. When annealed at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the memristive behavior disappears, further confirming the oxygen vacancies as being responsible for the memristive behavior. The 2D heterointerface offers opportunities for new design of high-performance memristor devices.

High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability

The utilization of three-dimensional (3D) structures in next-generation nanodevices has been attractive due to the exceptional features they offer. These 3D structures can reduce component space and improve device properties compared to thin-film electronic components. The type of transistor applied in 3D nanodevices is one of the most widely studied components due to its rich physics and ubiquitous application. In this paper, we report a complete functionalized component, a 3D vertical resonant photo-effect-transistor (VRPET), which is realized with the functionalized nanowire current channel, asymmetric ohmic/Schottky contacts, and an ultraviolet photogate with an organic light emission diode (OLED) excitation. To enhance the VRPET performance, analyses of the design and fabrication parameters were carried out, where the focus was specifically on the relationship between light resonance and absorption. The transistor developed here can operate up to a high voltage of 16.5 V and control currents up to 50 μA with an ultrastable performance under a strong electromagnetic interference. The VRPET with excellent properties is a step toward achieving integrated photoelectric devices and corresponding applications.

Toward facile broadband photodetectors based on self-assembled ZnO nanobridge/rubrene heterointerface

ZnO nanowire photodetectors have attracted much attention due to their excellent optoelectronic performance. However, operating speed remains a challenge, and scalability is also impeded by uncontrolled transfer methods and sophisticated fabrication process. In this paper, we have fabricated an excellent ZnO nanobridge ultraviolet photodetector array by using a simple one-step method. The faster photoresponse speed and a broader response wavelength (from UV to visible range) have been achieved by constructing a type-II ZnO/rubrene heterointerface. Performance enhancement is believed to arise from the well-matching band alignment and highly efficient separation of photogenerated electron-hole pairs at the heterointerface. Our strategy provides a simple and promising route to develop cost-effective and highly sensitive UV-vis photodetectors.

Multichannel ZnO nanowire field effect transistors by lift-off process

This paper describes a new, low-cost, top-down fabrication process, which makes it possible to define nanowire field effect transistor arrays with different numbers of nanowires simultaneously and systematically comparing their electrical performance. The main feature of this process is a developed bilayer photoresist pattern with a retrograde profile, which enables the modification of the nanowire in width, length, height and the number of transistor channels. The approach is compatible with low-cost manufacture without electron beam lithography, and benefits from process temperatures below 190 °C. Process reliability has been investigated by scanning electron microscopy, transmission electron microscopy and atomic force microscopy. Electrical measurements demonstrate enhancement mode transistors, which show a scalable correlation between the number of nanowires and the electrical characteristics. Devices with 100 nanowires exhibit the best performance with a high field effect mobility of 11.0 cm² Vs^-1, on/off current ratio of 3.97 × 10⁷ and subthreshold swing of 0.66 V dec^-1.

Selectively arranged single-wire based nanosensor array systems for gas monitoring

Gas nanosensors, comprised of arrays of nanoelectrodes with finger-widths of ∼100 nm developed by electron beam lithography and aerosol assisted chemical vapor deposited non-functionalized and Pt-functionalized tungsten oxide nanowires (<100 nm) subsequently integrated across the pairs of electrodes via the dielectrophoresis method, are developed in this work. The functionality of these devices is validated towards various concentrations of NO2 and C2H5OH. The results demonstrate reproducible and consistent responses with better sensitivity and partial selectivity for the non-functionalized systems to NO2, as opposed to the Pt-functionalized systems, which display better sensing properties towards C2H5OH with a loss of response to NO2. These results are explained on the basis of the additional chemical and electronic interactions at the Pt/tungsten oxide interface, which increase the pre-adsorption of oxygen species and make the functionalized surface rather more sensitive to C2H5OH than to NO2, in contrast to the non-functionalized surface.

Sonochemical assisted synthesis of RGO/ZnO nanowire arrays for photoelectrochemical water splitting

This article presented the synthesis of a hybrid nanoarchitecture material composed of reduced graphene oxide (RGO) multiple sheets and ZnO nanowire arrays (NWAs) formed on an arbitrary ZnO coated fluorine doped tin oxide (FTO) substrates via pulse sonication and hydrothermal approach. The NWAs have high aspect-ratio, high density, apt positioning and well-ordered formation. FESEM images demonstrated that RGO layers have been effectively intercalated between and on the accessible surfaces of the ZnO NWAs. The diameter of ZnO nanowires is 80-150nm and length about 1-2μm. Raman spectrum of hybrid material exhibited characteristic D and suppressed G peaks for graphene and E₂ mode at 437cm^-1 for ZnO NWAs. UV-visible spectrum indicated slight red shift towards visible range after formation of RGO/ZnO NWAs heterostructure. The Photoelectrochemical results indicated higher current densities for RGO/ZnO NWAs heterostructure due to water oxidation reaction at the working electrode compared to pristine ZnO NWAs.

Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

Modulation of electronic properties of tin oxide nanobelts via thermal control of surface oxygen defects

Nanomaterials made from binary metal oxides are of increasing interest because of their versatility in applications from flexible electronics to portable chemical and biological sensors. Controlling the electrical properties of these materials is the first step in device implementation. Tin dioxide (SnO₂) nanobelts (NB) synthesized by the vapor-liquid-solid mechanism have shown much promise in this regard. We explore the modification of devices prepared with single crystalline NBs by thermal annealing in vacuum and oxygen, resulting in a viable field-effect transistor (FET) for numerous applications at ambient temperature. An oxygen annealing step initially increases the device conductance by up to a factor of 10⁵, likely through the modification of the surface defects of the NB, leading to Schottky barrier limited devices. A multi-step annealing procedure leads to further increase of the conductance by approximately 350% and optimization of the electronic properties. The effects of each step is investigated systematically on a single NB. The optimization of the electrical properties of the NBs makes possible the consistent production of channel-limited FETs and control of the device performance. Understanding these improvements on the electrical properties over the as-grown materials provides a pathway to enhance and tailor the functionalities of tin oxide nanostructures for a wide variety of optical, electronic, optoelectronic, and sensing applications that operate at room temperature.

Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors

Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.

Flexible electronics based on inorganic nanowires

This review summarizes the latest research for exploiting the flexible electronic applications of inorganic nanowires.

Gas sensors based on semiconducting nanowire field-effect transistors

One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.

Fabrication of high-quality ZnTe nanowires toward high-performance rigid/flexible visible-light photodetectors

ZnTe is an important p-type semiconductor with great applications as field-effect transistors and photodetectors. In this paper, individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility of 11.3 cm(2)/Vs. Single ZnTe nanowire based photodetectors on rigid silicon substrate exhibited high sensitivity and excellent stability to visible incident light with responstivity and quantum efficiency as high as 1.87 × 10(5) A/W and 4.36 × 10(7)% respectively and are stable in a wide temperature range (25-250 °C). The polarization-sensitivity of the ZnTe nanowires was studied for the first time. The results revealed a periodic oscillation with the continuous variation of polarization angles. Besides, flexible photodetectors were also fabricated with the features of excellent flexibility, stability and sensitivity to visible incident light. Our work would enable application opportunities in using ZnTe nanowires for ultrahigh-performance photodetectors in scientific, commercial and industrial applications.

Contact printing of horizontally-aligned p-type Zn₃P₂ nanowire arrays for rigid and flexible photodetectors

Zn(3)P(2) is an important p-type semiconductor with the ability to detect almost all visible and ultraviolet light. By using the simple and efficient contact printing process, we reported the assembly of horizontally-aligned p-type Zn(3)P(2) nanowire arrays to be used as building blocks for high performance photodetectors. Horizontally-aligned Zn(3)P(2) nanowire arrays were first printed on silicon substrate to make thin-film transistors, exhibiting typical p-type transistor behavior with a high on/off ratio of 10(3). Besides, the Zn(3)P(2) nanowire array based devices showed a substantial response to illuminated lights with a wide range of wavelengths and densities. Flexible photodetectors were also fabricated by contact printing of horizontally-aligned Zn(3)P(2) nanowire arrays on flexible PET substrate, showing a comparable performance to the device on rigid silicon substrate.