Outstanding Stability and Resistive Switching Performance through Octa-Amino-Polyhedral Oligomeric Silsesquioxane Modification in Flexible Perovskite Resistive Random-Access Memories

Resistive random access memory (RRAM) has emerged as a promising candidate for next-generation storage technologies due to its simple structure, high running speed, excellent durability, high integration density, and low power consumption. This paper focuses on the application of organic-inorganic hybrid perovskite (OIHP) materials in RRAM by introducing an innovative three-dimensional POPA modification strategy, which is realized by binding octa-amine-polyhedral oligomeric silsesquioxanes (8NH2-POSS) onto the side chains of poly(acrylic acid) (PAA), thereby enhancing the material's resilience under elevated temperatures and humidity conditions. POPA cross-links with perovskite grains at crystalline boundaries through multiple -NH3+ and -C═O chemical anchoring sites on its branch chain, enhancing the grain adhesion, optimizing the film quality, and improving the cage structure distribution at the perovskite grain boundaries. The experimental results demonstrate that the POPA-modified OIHP RRAM exhibits an excellent resistance switching performance, with an optimal ON/OFF ratio of 5.0 × 105 and a data retention time of 104 s. After 150 days of environmental exposure, the ON/OFF ratio remains at 1.0 × 105, indicating good stability. Furthermore, the POPA modification endows the perovskite film with considerable flexibility, maintaining stable resistance switching performance under various bending radii. This study provides a vital reference for flexible, high-performance, and long-lifespan perovskite memory devices.

A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories

The intergranular interface modification of organic-inorganic hybrid perovskites (OHP) is an important issue to regulate the flexibility, stability, and resistive switching (RS) performance of resistive random-access memories (RRAMs). A novel strategy of polymer additives for OHP intergranular interface modification is explored in this work with the polyanionic backbone to improve the distribution of cage-shaped cavity molecules at the perovskite grain boundaries. Specifically speaking, poly(1-adamantylammonium acrylate) (PADAm) is first synthesized through the acid-base reaction of polyacrylic acid with 1-adamantylamine to simultaneously realize the introduction of a cage-shaped cavity molecule and the polyanionic backbone. Herein, organic ammonium cations 1-adamantylammonium (ADNH₃⁺) in PADAm are applied as the cage-shaped cavity molecules to tune the dielectric property by being anchored at the perovskite grain boundaries. Meanwhile, polyacrylic anions in PADAm play the role of the polyanionic backbone to produce the more uniform distribution of ADNH₃⁺. Simultaneously, the flexibility and stability of OHP RRAM devices are also improved due to the introduction of the polyanionic backbone. Consequently, the 4% ADNH₃I-modified planar device exhibits the stable nonvolatile RS behavior with an on/off ratio of ∼10⁴, even with one-month exposure under an ambient environment. Importantly, the introduction of PADAm in the flexible fibrous crosspoint of functional fiber Al@MAPbI₃:PADAm and bare Al fiber further increases the on/off ratio to 10⁸ due to the effectively improved distribution of hollow cage-shaped ADNH₃⁺ at the perovskite intergranular interfaces together with the application of the fibrous crosspoint device configuration. Especially, these excellent crosspoint RRAM devices can be integrated into the woven fibrous RRAM array in the thermal plastic packaging configuration. In addition, the excellent multilevel RS behavior can also be realized in the woven fibrous RRAM array, indicating potential high-density data storage. This work provides a novel strategy of polymer additives bearing the polyanionic backbone to improve the flexibility, stability, and RS performance of perovskite RRAM devices.

Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity

The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a TPE-Azo@PEM composite, which served as an active layer to fabricate the FTO/TPE-Azo@PEM/Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:10^4.2:10^1.6 for "OFF", "ON1", and "ON2" states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV-vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.

Chemically Controlled Volatile and Nonvolatile Resistive Memory Characteristics of Novel Oxygen-Based Polymers

Recent advancements in modern microelectronics continuously increase the data storage capacity of modern devices, but they require delicate and costly fabrication processes. As alternatives to conventional inorganic based semiconductors, semiconducting polymers are of academic and industrial interest for their cost-efficiency, power efficiency, and flexible processability. Here, we have synthesized a series of novel oxygen-based polymers through the postmodification reactions of poly(ethylene-alt-maleate) with various oxybenzyl alcohol derivatives. The oxygen-based polymers are thermally stable up to 180 °C, and their nanoscale film devices exhibit reliable, power efficient p-type unipolar volatile and nonvolatile resistive memory characteristics with high ON/OFF current ratios. Additionally, when given a higher number of oxygen atoms in oxyphenyl side groups, the thin film polymer devices demonstrate a wide operational film thickness range. The memory characteristics depend on the oxyphenyl moieties functioning as charge trap sites, where a combination of Schottky emission and trap-limited space charge limited conductions in OFF-state and hopping conduction in ON-state are observed. This study demonstrates the chemical incorporation of oxyphenyl derivatives into polymer dielectrics as a powerful development tool for p-type resistive memory materials.

Highly flexible and stable resistive switching devices based on WS2 nanosheets:poly(methylmethacrylate) nanocomposites

This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS₂ nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS₂ NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 10⁴. The memristive device based on the WS₂ NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 10⁴ sec, and the number of endurance cycles was greater than 1 × 10². The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS₂ NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram.

Organic and hybrid resistive switching materials and devices

This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.

Multifunctional Dithiadiazolyl Radicals: Fluorescence, Electroluminescence, and Photoconducting Behavior in Pyren-1'-yl-dithiadiazolyl

The pyren-1'-yl-functionalized dithiadiazolyl (DTDA) radical, C₁₆H₉CNSSN (1), is monomeric in solution and exhibits fluorescence in the deep-blue region of the visible spectrum (440 nm) upon excitation at 241 nm. The salt [1][GaCl₄] exhibits similar emission, reflecting the largely spectator nature of the radical in the fluorescence process, although the presence of the radical leads to a modest quenching of emission (Φ_F = 98% for 1⁺ and 50% for 1) through enhancement of non-radiative decay processes. Time-dependent density functional theory studies on 1 coupled with the similar emission profiles of both 1⁺ and 1 are consistent with the initial excitation being of predominantly pyrene π-π* character. Spectroscopic studies indicate stabilization of the excited state in polar media, with the fluorescence lifetime for 1 (τ = 5 ns) indicative of a short-lived excited state. Comparative studies between the energies of the frontier orbitals of pyren-1'-yl nitronyl nitroxide (2, which is not fluorescent) and 1 reveal that the energy mismatch and poor spatial overlap between the DTDA radical SOMO and the pyrene π manifold in 1 efficiently inhibit the non-radiative electron-electron exchange relaxation pathway previously described for 2. Solid-state films of both 1 and [1][GaCl₄] exhibit broad emission bands at 509 and 545 nm, respectively. Incorporation of 1 within a host matrix for OLED fabrication revealed electroluminescence, with CIE coordinates of (0.205, 0.280) corresponding to a sky-blue emission. The brightness of the device reached 1934 cd/m² at an applied voltage of 16 V. The crystal structure of 1 reveals a distorted π-stacked motif with almost regular distances between the pyrene rings but alternating long-short contacts between DTDA radicals. Solid state measurements on a thin film of 1 reveal emission occurs at shorter wavelengths (375 nm) whereas conductivity measurements on a single crystal of 1 show a photoconducting response at longer wavelength excitation (455 nm).

Intrinsically stretchable, solution-processable functional poly(siloxane-imide)s for stretchable resistive memory applications

A stretchable WORM-type resistive memory device was fabricated using poly(siloxane-imide) ODPA-A12 with favorable mechanical properties.

Design and synthesis of high heat-resistant, soluble, and hydrophobic fluorinated polyimides containing pyridine and trifluoromethylthiophenyl units

In this study, a novel diamine monomer, 4-(4-trifluoromethylthiophenyl)-2,6-bis(4-aminophenyl)pyridine (FTPAP) was synthesized through two-step reaction from 4-trifluoromethylthiobenzaldehyde and 4-nitroacetophenone as raw materials, and then the structure of FTPAP was characterized by Fourier transform infrared (FTIR) spectroscopy, nuclear magnetic resonance, and mass spectrometry. A series of fluorinated polyimides were prepared from FTPAP with five commercial dianhydrides, namely, pyromellitic dianhydride, biphenyl tetracarboxylic dianhydride, oxydiphtahalic anhydride, benzophenone tetracarboxylic dianhydride, and 4,4′-(hexafluoroisopropylidene) diphthalic anhydride. The structure and performance of the fluorinated polymers were fully characterized by FTIR, differential scanning calorimetry, thermogravimetric analysis, and wide-angle X-ray diffraction (WAXD). The inherent viscosity of polymers ranged from 0.41 to 1.45 dL g−1. These polymers displayed good solubility in polar aprotic solvents, such as N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, and N-methyl-2-pyrrolidone, at room temperature or on heating. Furthermore, they exhibited outstanding thermal stability with glass transition temperatures beyond 305°C, and the temperature of 10% weight loss was in the range of 514–573°C with more than 56% residue at 800°C under nitrogen. Moreover, they showed high optical transparency with the cutoff wavelengths in the range of 385–457 nm and excellent hydrophobic property with contact angle in the range of 82.8–97.6°. In addition, the results of WAXD indicated that all of the polymers presented amorphous structure.

Development of Conjugated Polymers for Memory Device Applications

This review summarizes the most widely used mechanisms in memory devices based on conjugated polymers, such as charge transfer, space charge traps, and filament conduction. In addition, recent studies of conjugated polymers for memory device applications are also reviewed, discussed, and differentiated based on the mechanisms and structural design. Moreover, the electrical conditions of conjugated polymers can be further fine-tuned by careful design and synthesis based on the switching mechanisms. The review also emphasizes and demonstrates the structure-memory properties relationship of donor-acceptor conjugated polymers for advanced memory device applications.

A WORM type polymer electrical memory based on polyethersulfone with carbazole derivatives

A series of high-performance polyethersulfone, which had pendent carbazole moieties (Cz-PES 1–3), have been designed and successfully synthesized for an application in a write-once read-many type memory device as the active polymer layer. The memory performance can be tuned by changing the substituent in the Cz derivatives units. Cz-PES 3 with excellent thermal properties ( Tg = 185°C and Td = 378°C) exhibits the best memory performance. For Cz-PES 3-based device indium tin oxide/Cz-PES 3/aluminum, the turn-on voltage is 2.5 V and the ON/OFF current ratio is higher than 106. Moreover, the data can be maintained for longer than 3 × 105 s once written and can be read for more than 450 cycles under a reading voltage of 1.0 V at ambient conditions. Thus Cz-PES 3 can serve as an excellent memory material in the data storage field of next generation.

High-Performance Blue OLEDs Based on Phenanthroimidazole Emitters via Substitutions at the C6- and C9-Positions for Improving Exciton Utilization

Donor-acceptor (D-A) molecular architecture has been shown to be an effective strategy for obtaining high-performance electroluminescent materials. In this work, two D-A molecules, Ph-BPA-BPI and Py-BPA-BPI, have been synthesized by attaching highly fluorescent phenanthrene or pyrene groups to the C6- and C9-positions of a locally excited-state emitting phenylamine-phenanthroimidazole moiety. Equipped with good physical and hybridized local and charge-transfer properties, both molecules show high performances as blue emitters in nondoped organic light-emitting devices (OLEDs). An OLED using Ph-BPA-BPI as the emitting layer exhibits deep-blue emission with CIE coordinates of (0.15, 0.08), and a maximum external quantum efficiency (EQE), current efficiency (CE), and power efficiency (PE) of 4.56 %, 3.60 cd A(-1) , and 3.66 lm W(-1) , respectively. On the other hand, a Py-BPA-BPI-based, sky-blue OLED delivers the best results among nondoped OLEDs with CIEy values of < 0.3 reported so far, for which a very low turn-on voltage of 2.15 V, CIE coordinates of (0.17, 0.29), and maximum CE, PE, and EQE values of 10.9 cd A(-1) , 10.5 lm W(-1) , and 5.64 %, were achieved, respectively. More importantly, both devices show little or even no efficiency roll-off and high singlet exciton-utilizing efficiencies of 36.2 % for Ph-BPA-BPI and 39.2 % for Py-BPA-BPI.

Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules

Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.

Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices

Biocompatible deoxyribonucleic acid (DNA), with high mechanical strength, was employed as the substrate for a Ag nanowire (Ag NW) pattern and then used to fabricate flexible resistor-type memory devices.

Novel solution-processable functional polyimide/ZrO2 hybrids with tunable digital memory behaviors

The resulting PI hybrid films exhibited electrically programmable digital memory properties from DRAM, SRAM to WORM with a high ON/OFF current ratio by controlling the content of ZrO₂ from 0 to 30 wt%.

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.

Electrochemically fabricated electrochromic films from 4-(N-carbazolyl)triphenylamine and its dimethoxy derivative

4-(N-Carbazolyl)triphenylamine (TPACz) and its methoxy derivative MeOTPACz could be facilely fabricated into redox-active and electrochromic PTPACz polymer and (MeOTPACz)2 dimer films via electrochemical polymerization.

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.

Towards the development of flexible non-volatile memories

Flexible non-volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non-volatile memories.

Tunable electrical memory characteristics using polyimide:polycyclic aromatic compound blends on flexible substrates

Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4'-diamino-4″-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronene, the PI(AMTPA):PDI-DO blend based memory devices show a smaller threshold voltage and change the memory behavior in a smaller additive content. Besides, the memory devices fabricated on a flexible PEN substrate exhibit an excellent durability upon the bending conditions. These tunable memory performances of the developed PI/polycyclic aromatic compound blends are advantageous for future advanced memory device applications.

Linkage effect on the memory behavior of sulfonyl-containing aromatic polyether, polyester, polyamide, and polyimide

Sulfonyl-containing aromatic polymers DSPE, DSPET, DSPA, and DSPI consisting of a triphenylamine moiety were synthesized and the memory behavior was investigated. By choosing the suitable linkage between the electron donor and acceptor, tunable memory properties (from insulator to different retention time SRAM) could be achieved.