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Shen J, Guan P, Jiang A, Fan W, Li S, Liu Y, Xu S, Cao S. A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories. ACS APPLIED MATERIALS & INTERFACES 2022; 14:44652-44664. [PMID: 36125291 DOI: 10.1021/acsami.2c10562] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The intergranular interface modification of organic-inorganic hybrid perovskites (OHP) is an important issue to regulate the flexibility, stability, and resistive switching (RS) performance of resistive random-access memories (RRAMs). A novel strategy of polymer additives for OHP intergranular interface modification is explored in this work with the polyanionic backbone to improve the distribution of cage-shaped cavity molecules at the perovskite grain boundaries. Specifically speaking, poly(1-adamantylammonium acrylate) (PADAm) is first synthesized through the acid-base reaction of polyacrylic acid with 1-adamantylamine to simultaneously realize the introduction of a cage-shaped cavity molecule and the polyanionic backbone. Herein, organic ammonium cations 1-adamantylammonium (ADNH3+) in PADAm are applied as the cage-shaped cavity molecules to tune the dielectric property by being anchored at the perovskite grain boundaries. Meanwhile, polyacrylic anions in PADAm play the role of the polyanionic backbone to produce the more uniform distribution of ADNH3+. Simultaneously, the flexibility and stability of OHP RRAM devices are also improved due to the introduction of the polyanionic backbone. Consequently, the 4% ADNH3I-modified planar device exhibits the stable nonvolatile RS behavior with an on/off ratio of ∼104, even with one-month exposure under an ambient environment. Importantly, the introduction of PADAm in the flexible fibrous crosspoint of functional fiber Al@MAPbI3:PADAm and bare Al fiber further increases the on/off ratio to 108 due to the effectively improved distribution of hollow cage-shaped ADNH3+ at the perovskite intergranular interfaces together with the application of the fibrous crosspoint device configuration. Especially, these excellent crosspoint RRAM devices can be integrated into the woven fibrous RRAM array in the thermal plastic packaging configuration. In addition, the excellent multilevel RS behavior can also be realized in the woven fibrous RRAM array, indicating potential high-density data storage. This work provides a novel strategy of polymer additives bearing the polyanionic backbone to improve the flexibility, stability, and RS performance of perovskite RRAM devices.
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Affiliation(s)
- Junqing Shen
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Ping Guan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Aiyun Jiang
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
| | - Wentao Fan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengnan Li
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Yingliang Liu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengang Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shaokui Cao
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
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Zhou PK, Zong LL, Song KY, Yang ZC, Li HH, Chen ZR. Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50350-50357. [PMID: 34647456 DOI: 10.1021/acsami.1c14686] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a TPE-Azo@PEM composite, which served as an active layer to fabricate the FTO/TPE-Azo@PEM/Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:104.2:101.6 for "OFF", "ON1", and "ON2" states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV-vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.
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Affiliation(s)
- Pan-Ke Zhou
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Lu-Lu Zong
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Kai-Yue Song
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Zhen-Cong Yang
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Hao-Hong Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou University, Fuzhou 350108, China
| | - Zhi-Rong Chen
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou University, Fuzhou 350108, China
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Chatterjee D, Jadhav UA, Javaregowda BH, Dongale TD, Patil PS, Wadgaonkar PP. Partially bio-based triarylamine-containing polyimides: Synthesis, characterization and evaluation in non-volatile memory device applications. Eur Polym J 2021. [DOI: 10.1016/j.eurpolymj.2021.110327] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Ree BJ, Isono T, Satoh T. Chemically Controlled Volatile and Nonvolatile Resistive Memory Characteristics of Novel Oxygen-Based Polymers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:28435-28445. [PMID: 32525296 DOI: 10.1021/acsami.0c06939] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent advancements in modern microelectronics continuously increase the data storage capacity of modern devices, but they require delicate and costly fabrication processes. As alternatives to conventional inorganic based semiconductors, semiconducting polymers are of academic and industrial interest for their cost-efficiency, power efficiency, and flexible processability. Here, we have synthesized a series of novel oxygen-based polymers through the postmodification reactions of poly(ethylene-alt-maleate) with various oxybenzyl alcohol derivatives. The oxygen-based polymers are thermally stable up to 180 °C, and their nanoscale film devices exhibit reliable, power efficient p-type unipolar volatile and nonvolatile resistive memory characteristics with high ON/OFF current ratios. Additionally, when given a higher number of oxygen atoms in oxyphenyl side groups, the thin film polymer devices demonstrate a wide operational film thickness range. The memory characteristics depend on the oxyphenyl moieties functioning as charge trap sites, where a combination of Schottky emission and trap-limited space charge limited conductions in OFF-state and hopping conduction in ON-state are observed. This study demonstrates the chemical incorporation of oxyphenyl derivatives into polymer dielectrics as a powerful development tool for p-type resistive memory materials.
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Affiliation(s)
- Brian J Ree
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Lee JH, Wu C, Sung S, An H, Kim TW. Highly flexible and stable resistive switching devices based on WS 2 nanosheets:poly(methylmethacrylate) nanocomposites. Sci Rep 2019; 9:19316. [PMID: 31848387 PMCID: PMC6917699 DOI: 10.1038/s41598-019-55637-2] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2019] [Accepted: 10/09/2019] [Indexed: 11/09/2022] Open
Abstract
This paper reports data for the electrical characteristics and the operating mechanisms of flexible resistive switching devices based on WS2 nanosheets (NSs) dispersed in a poly(methyl methacrylate) (PMMA) layer. The ON/OFF ratio of the memristive device based on an Al/WS2 NSs:PMMA/indium tin oxides (ITO) structure was approximately 5.9 × 104. The memristive device based on the WS2 NSs also exhibited the bipolar switching characteristics with low power consumption and great performance in the bent state with radii of the curvatures of 20 and 10 mm. Especially, the results obtained after bending the device were similar to those observed before bending. The device showed nearly the same ON/OFF ratio for a retention time of 1 × 104 sec, and the number of endurance cycles was greater than 1 × 102. The set voltage and the reset voltage probability distributions for the setting and the resetting processes indicated bipolar switching characteristics. The operating and the carrier transport mechanisms of the Al/WS2 NSs:PMMA/ITO device could be explained based on the current-voltage results with the aid of an energy band diagram.
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Affiliation(s)
- Jeong Heon Lee
- Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Chaoxing Wu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Sihyun Sung
- Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Haoqun An
- Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Tae Whan Kim
- Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
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Yen HJ, Liou GS. Design and preparation of triphenylamine-based polymeric materials towards emergent optoelectronic applications. Prog Polym Sci 2019. [DOI: 10.1016/j.progpolymsci.2018.12.001] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Gao S, Yi X, Shang J, Liu G, Li RW. Organic and hybrid resistive switching materials and devices. Chem Soc Rev 2019; 48:1531-1565. [DOI: 10.1039/c8cs00614h] [Citation(s) in RCA: 211] [Impact Index Per Article: 42.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.
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Affiliation(s)
- Shuang Gao
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Xiaohui Yi
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Gang Liu
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
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8
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Beldjoudi Y, Nascimento MA, Cho YJ, Yu H, Aziz H, Tonouchi D, Eguchi K, Matsushita MM, Awaga K, Osorio-Roman I, Constantinides CP, Rawson JM. Multifunctional Dithiadiazolyl Radicals: Fluorescence, Electroluminescence, and Photoconducting Behavior in Pyren-1'-yl-dithiadiazolyl. J Am Chem Soc 2018; 140:6260-6270. [PMID: 29688006 DOI: 10.1021/jacs.7b12592] [Citation(s) in RCA: 49] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The pyren-1'-yl-functionalized dithiadiazolyl (DTDA) radical, C16H9CNSSN (1), is monomeric in solution and exhibits fluorescence in the deep-blue region of the visible spectrum (440 nm) upon excitation at 241 nm. The salt [1][GaCl4] exhibits similar emission, reflecting the largely spectator nature of the radical in the fluorescence process, although the presence of the radical leads to a modest quenching of emission (ΦF = 98% for 1+ and 50% for 1) through enhancement of non-radiative decay processes. Time-dependent density functional theory studies on 1 coupled with the similar emission profiles of both 1+ and 1 are consistent with the initial excitation being of predominantly pyrene π-π* character. Spectroscopic studies indicate stabilization of the excited state in polar media, with the fluorescence lifetime for 1 (τ = 5 ns) indicative of a short-lived excited state. Comparative studies between the energies of the frontier orbitals of pyren-1'-yl nitronyl nitroxide (2, which is not fluorescent) and 1 reveal that the energy mismatch and poor spatial overlap between the DTDA radical SOMO and the pyrene π manifold in 1 efficiently inhibit the non-radiative electron-electron exchange relaxation pathway previously described for 2. Solid-state films of both 1 and [1][GaCl4] exhibit broad emission bands at 509 and 545 nm, respectively. Incorporation of 1 within a host matrix for OLED fabrication revealed electroluminescence, with CIE coordinates of (0.205, 0.280) corresponding to a sky-blue emission. The brightness of the device reached 1934 cd/m2 at an applied voltage of 16 V. The crystal structure of 1 reveals a distorted π-stacked motif with almost regular distances between the pyrene rings but alternating long-short contacts between DTDA radicals. Solid state measurements on a thin film of 1 reveal emission occurs at shorter wavelengths (375 nm) whereas conductivity measurements on a single crystal of 1 show a photoconducting response at longer wavelength excitation (455 nm).
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Affiliation(s)
- Yassine Beldjoudi
- Department of Chemistry & Biochemistry , University of Windsor , 401 Sunset Avenue , Windsor , ON N9B 3P4 , Canada
| | - Mitchell A Nascimento
- Department of Chemistry & Biochemistry , University of Windsor , 401 Sunset Avenue , Windsor , ON N9B 3P4 , Canada
| | - Yong Joo Cho
- Department of Electrical & Computer Engineering, Waterloo Institute of Nanotechnology , University of Waterloo , 200 University Avenue West , Waterloo , ON N2L 3G1 , Canada
| | - Hyeonghwa Yu
- Department of Electrical & Computer Engineering, Waterloo Institute of Nanotechnology , University of Waterloo , 200 University Avenue West , Waterloo , ON N2L 3G1 , Canada
| | - Hany Aziz
- Department of Electrical & Computer Engineering, Waterloo Institute of Nanotechnology , University of Waterloo , 200 University Avenue West , Waterloo , ON N2L 3G1 , Canada
| | - Daiki Tonouchi
- Department of Chemistry & Integrated Research Consortium on Chemical Sciences (IRCCS) , The University of Nagoya , Furo-Cho, Chikusa-Ku , Nagoya City , Aichi 464-8602 , Japan
| | - Keitaro Eguchi
- Department of Chemistry & Integrated Research Consortium on Chemical Sciences (IRCCS) , The University of Nagoya , Furo-Cho, Chikusa-Ku , Nagoya City , Aichi 464-8602 , Japan
| | - Michio M Matsushita
- Department of Chemistry & Integrated Research Consortium on Chemical Sciences (IRCCS) , The University of Nagoya , Furo-Cho, Chikusa-Ku , Nagoya City , Aichi 464-8602 , Japan
| | - Kunio Awaga
- Department of Chemistry & Integrated Research Consortium on Chemical Sciences (IRCCS) , The University of Nagoya , Furo-Cho, Chikusa-Ku , Nagoya City , Aichi 464-8602 , Japan
| | - Igor Osorio-Roman
- Department of Chemistry & Biochemistry , University of Windsor , 401 Sunset Avenue , Windsor , ON N9B 3P4 , Canada
| | - Christos P Constantinides
- Department of Chemistry , North Caroline State University , 2620 Yarbrough Drive, Box 8204 , Raleigh , North Carolina 27695 , United States
| | - Jeremy M Rawson
- Department of Chemistry & Biochemistry , University of Windsor , 401 Sunset Avenue , Windsor , ON N9B 3P4 , Canada
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Hsu LC, Shih CC, Hsieh HC, Chiang YC, Wu PH, Chueh CC, Chen WC. Intrinsically stretchable, solution-processable functional poly(siloxane-imide)s for stretchable resistive memory applications. Polym Chem 2018. [DOI: 10.1039/c8py01283k] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
A stretchable WORM-type resistive memory device was fabricated using poly(siloxane-imide) ODPA-A12 with favorable mechanical properties.
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Affiliation(s)
- Li-Che Hsu
- Institute of Polymer Science and Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Chien-Chung Shih
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
- Advanced Research Center for Green Materials Science and Technology
| | - Hui-Ching Hsieh
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Ping-Han Wu
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
- Advanced Research Center for Green Materials Science and Technology
| | - Wen-Chang Chen
- Institute of Polymer Science and Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
- Department of Chemical Engineering
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10
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Huang X, Li H, Liu C, Wei C. Design and synthesis of high heat-resistant, soluble, and hydrophobic fluorinated polyimides containing pyridine and trifluoromethylthiophenyl units. HIGH PERFORM POLYM 2017. [DOI: 10.1177/0954008317749018] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
In this study, a novel diamine monomer, 4-(4-trifluoromethylthiophenyl)-2,6-bis(4-aminophenyl)pyridine (FTPAP) was synthesized through two-step reaction from 4-trifluoromethylthiobenzaldehyde and 4-nitroacetophenone as raw materials, and then the structure of FTPAP was characterized by Fourier transform infrared (FTIR) spectroscopy, nuclear magnetic resonance, and mass spectrometry. A series of fluorinated polyimides were prepared from FTPAP with five commercial dianhydrides, namely, pyromellitic dianhydride, biphenyl tetracarboxylic dianhydride, oxydiphtahalic anhydride, benzophenone tetracarboxylic dianhydride, and 4,4′-(hexafluoroisopropylidene) diphthalic anhydride. The structure and performance of the fluorinated polymers were fully characterized by FTIR, differential scanning calorimetry, thermogravimetric analysis, and wide-angle X-ray diffraction (WAXD). The inherent viscosity of polymers ranged from 0.41 to 1.45 dL g−1. These polymers displayed good solubility in polar aprotic solvents, such as N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, and N-methyl-2-pyrrolidone, at room temperature or on heating. Furthermore, they exhibited outstanding thermal stability with glass transition temperatures beyond 305°C, and the temperature of 10% weight loss was in the range of 514–573°C with more than 56% residue at 800°C under nitrogen. Moreover, they showed high optical transparency with the cutoff wavelengths in the range of 385–457 nm and excellent hydrophobic property with contact angle in the range of 82.8–97.6°. In addition, the results of WAXD indicated that all of the polymers presented amorphous structure.
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Affiliation(s)
- Xiaohua Huang
- Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Ministry of Education, and School of Material Science and Engineering, Guilin University of Technology, Guilin, People’s Republic of China
| | - Hua Li
- Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Ministry of Education, and School of Material Science and Engineering, Guilin University of Technology, Guilin, People’s Republic of China
| | - Chanjuan Liu
- Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Ministry of Education, and School of Material Science and Engineering, Guilin University of Technology, Guilin, People’s Republic of China
| | - Chun Wei
- Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Ministry of Education, and School of Material Science and Engineering, Guilin University of Technology, Guilin, People’s Republic of China
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12
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Wang M, Li Z, Li H, He J, Li N, Xu Q, Lu J. Different Steric-Twist-Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8-Naphthalimide Moieties. Chem Asian J 2017; 12:2744-2748. [DOI: 10.1002/asia.201701044] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2017] [Revised: 08/15/2017] [Indexed: 01/04/2023]
Affiliation(s)
- Ming Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Zhuang Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jinghui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Najun Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
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Yen HJ, Shan C, Wang L, Xu P, Zhou M, Wang HL. Development of Conjugated Polymers for Memory Device Applications. Polymers (Basel) 2017; 9:E25. [PMID: 30970701 PMCID: PMC6432021 DOI: 10.3390/polym9010025] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2016] [Revised: 12/27/2016] [Accepted: 01/08/2017] [Indexed: 11/26/2022] Open
Abstract
This review summarizes the most widely used mechanisms in memory devices based on conjugated polymers, such as charge transfer, space charge traps, and filament conduction. In addition, recent studies of conjugated polymers for memory device applications are also reviewed, discussed, and differentiated based on the mechanisms and structural design. Moreover, the electrical conditions of conjugated polymers can be further fine-tuned by careful design and synthesis based on the switching mechanisms. The review also emphasizes and demonstrates the structure-memory properties relationship of donor-acceptor conjugated polymers for advanced memory device applications.
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Affiliation(s)
- Hung-Ju Yen
- Physical Chemistry and Applied Spectroscopy (C-PCS), Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | - Changsheng Shan
- Physical Chemistry and Applied Spectroscopy (C-PCS), Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
| | - Leeyih Wang
- Center for Condensed Matter Science, National Taiwan University, 1 Roosevelt Road, 4th Sec., Taipei 10617, Taiwan.
| | - Ping Xu
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China.
| | - Ming Zhou
- Department of Chemistry, Northeast Normal University, Changchun 130024, China.
| | - Hsing-Lin Wang
- Physical Chemistry and Applied Spectroscopy (C-PCS), Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
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Fang J, Wang Q, Yue X, Wang G, Jiang Z. A WORM type polymer electrical memory based on polyethersulfone with carbazole derivatives. HIGH PERFORM POLYM 2016. [DOI: 10.1177/0954008315621122] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
A series of high-performance polyethersulfone, which had pendent carbazole moieties (Cz-PES 1–3), have been designed and successfully synthesized for an application in a write-once read-many type memory device as the active polymer layer. The memory performance can be tuned by changing the substituent in the Cz derivatives units. Cz-PES 3 with excellent thermal properties ( Tg = 185°C and Td = 378°C) exhibits the best memory performance. For Cz-PES 3-based device indium tin oxide/Cz-PES 3/aluminum, the turn-on voltage is 2.5 V and the ON/OFF current ratio is higher than 106. Moreover, the data can be maintained for longer than 3 × 105 s once written and can be read for more than 450 cycles under a reading voltage of 1.0 V at ambient conditions. Thus Cz-PES 3 can serve as an excellent memory material in the data storage field of next generation.
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Affiliation(s)
- Jiyong Fang
- Alan G. MacDiarmid Institute, College of Chemistry, Jilin University, Changchun, China
| | - Qinhong Wang
- Alan G. MacDiarmid Institute, College of Chemistry, Jilin University, Changchun, China
| | - Xigui Yue
- Alan G. MacDiarmid Institute, College of Chemistry, Jilin University, Changchun, China
| | - Guibin Wang
- Alan G. MacDiarmid Institute, College of Chemistry, Jilin University, Changchun, China
| | - Zhenhua Jiang
- Alan G. MacDiarmid Institute, College of Chemistry, Jilin University, Changchun, China
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Liu B, Yuan Y, He D, Huang DY, Luo CY, Zhu ZL, Lu F, Tong QX, Lee CS. High-Performance Blue OLEDs Based on Phenanthroimidazole Emitters via Substitutions at the C6- and C9-Positions for Improving Exciton Utilization. Chemistry 2016; 22:12130-7. [PMID: 27412733 DOI: 10.1002/chem.201602122] [Citation(s) in RCA: 35] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2016] [Indexed: 11/12/2022]
Abstract
Donor-acceptor (D-A) molecular architecture has been shown to be an effective strategy for obtaining high-performance electroluminescent materials. In this work, two D-A molecules, Ph-BPA-BPI and Py-BPA-BPI, have been synthesized by attaching highly fluorescent phenanthrene or pyrene groups to the C6- and C9-positions of a locally excited-state emitting phenylamine-phenanthroimidazole moiety. Equipped with good physical and hybridized local and charge-transfer properties, both molecules show high performances as blue emitters in nondoped organic light-emitting devices (OLEDs). An OLED using Ph-BPA-BPI as the emitting layer exhibits deep-blue emission with CIE coordinates of (0.15, 0.08), and a maximum external quantum efficiency (EQE), current efficiency (CE), and power efficiency (PE) of 4.56 %, 3.60 cd A(-1) , and 3.66 lm W(-1) , respectively. On the other hand, a Py-BPA-BPI-based, sky-blue OLED delivers the best results among nondoped OLEDs with CIEy values of < 0.3 reported so far, for which a very low turn-on voltage of 2.15 V, CIE coordinates of (0.17, 0.29), and maximum CE, PE, and EQE values of 10.9 cd A(-1) , 10.5 lm W(-1) , and 5.64 %, were achieved, respectively. More importantly, both devices show little or even no efficiency roll-off and high singlet exciton-utilizing efficiencies of 36.2 % for Ph-BPA-BPI and 39.2 % for Py-BPA-BPI.
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Affiliation(s)
- Bin Liu
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China
| | - Yi Yuan
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China.,Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
| | - Dan He
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China
| | - De-Yue Huang
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China
| | - Cheng-Yuan Luo
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China
| | - Ze-Lin Zhu
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China.,Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
| | - Feng Lu
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China
| | - Qing-Xiao Tong
- Department of Chemistry and Key laboratory for Preparation and Application of Ordered Structural Materials of Guangdong Province, Shantou University, Guangdong, 515063, P. R. China.
| | - Chun-Sing Lee
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China.
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16
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Liu Q, Dong H, Li Y, Li H, Chen D, Wang L, Xu Q, Lu J. Improving Memory Performances by Adjusting the Symmetry and Polarity of O-Fluoroazobenzene-Based Molecules. Chem Asian J 2016; 11:512-9. [PMID: 26530289 DOI: 10.1002/asia.201501030] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/24/2015] [Indexed: 11/11/2022]
Abstract
Three O-fluoroazobenzene-based molecules were chosen as memory-active molecules: FAZO-1 with a D-A2-D symmetric structure, FAZO-2 with an A1-A2-A1 symmetric structure, and FAZO-3 with a D-A2-A1 asymmetric structure. Both FAZO-1 and FAZO-2 had a lower molecular polarity, whereas FAZO-3 had a higher polarity. The fabricated indium-tin oxide (ITO)/FAZO-1/Al (Au) and ITO/FAZO-2/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO/FAZO-3/Al (Au) device showed nonvolatile ternary write-once-read-many-times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric-field-induced charge-transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.
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Affiliation(s)
- Quan Liu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Huilong Dong
- Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Youyong Li
- Functional Nano & Soft Materials Laboratory (FUNSOM) and, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Dongyun Chen
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Lihua Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
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17
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Shih CC, Chung CY, Lam JY, Wu HC, Morimitsu Y, Matsuno H, Tanaka K, Chen WC. Transparent deoxyribonucleic acid substrate with high mechanical strength for flexible and biocompatible organic resistive memory devices. Chem Commun (Camb) 2016; 52:13463-13466. [DOI: 10.1039/c6cc07648c] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Biocompatible deoxyribonucleic acid (DNA), with high mechanical strength, was employed as the substrate for a Ag nanowire (Ag NW) pattern and then used to fabricate flexible resistor-type memory devices.
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Affiliation(s)
- Chien-Chung Shih
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Cheng-Yu Chung
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Jeun-Yan Lam
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Hung-Chin Wu
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Yuma Morimitsu
- Department of Applied Chemistry
- Kyushu University
- Fukuoka 819-0395
- Japan
| | - Hisao Matsuno
- Department of Applied Chemistry
- Kyushu University
- Fukuoka 819-0395
- Japan
| | - Keiji Tanaka
- Department of Applied Chemistry
- Kyushu University
- Fukuoka 819-0395
- Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
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18
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Tsai CL, Lee TM, Liou GS. Novel solution-processable functional polyimide/ZrO2 hybrids with tunable digital memory behaviors. Polym Chem 2016. [DOI: 10.1039/c6py00841k] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
The resulting PI hybrid films exhibited electrically programmable digital memory properties from DRAM, SRAM to WORM with a high ON/OFF current ratio by controlling the content of ZrO2 from 0 to 30 wt%.
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Affiliation(s)
- Chia-Liang Tsai
- Functional Polymeric Materials Laboratory
- Institute of Polymer Science and Engineering
- National Taiwan University
- Taipei 10617
| | - Tzong-Ming Lee
- Material and Chemical Research Laboratories
- Industrial Technology Research Institute
- Hsinchu 31040
| | - Guey-Sheng Liou
- Functional Polymeric Materials Laboratory
- Institute of Polymer Science and Engineering
- National Taiwan University
- Taipei 10617
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19
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Huang TT, Tsai CL, Hsiao SH, Liou GS. Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers. RSC Adv 2016. [DOI: 10.1039/c6ra02349e] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023] Open
Abstract
In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.
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Affiliation(s)
- Tzu-Tien Huang
- Institute of Polymer Science and Engineering
- National Taiwan University
- Taipei
- Taiwan 10617
| | - Chia-Liang Tsai
- Institute of Polymer Science and Engineering
- National Taiwan University
- Taipei
- Taiwan 10617
| | - Sheng-Huei Hsiao
- Department of Chemical Engineering and Biotechnology
- National Taipei University of Technology
- Taipei
- Taiwan 10608
| | - Guey-Sheng Liou
- Institute of Polymer Science and Engineering
- National Taiwan University
- Taipei
- Taiwan 10617
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20
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Hsiao SH, Wang HM. Electrochemically fabricated electrochromic films from 4-(N-carbazolyl)triphenylamine and its dimethoxy derivative. RSC Adv 2016. [DOI: 10.1039/c6ra08528h] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023] Open
Abstract
4-(N-Carbazolyl)triphenylamine (TPACz) and its methoxy derivative MeOTPACz could be facilely fabricated into redox-active and electrochromic PTPACz polymer and (MeOTPACz)2 dimer films via electrochemical polymerization.
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Affiliation(s)
- Sheng-Huei Hsiao
- Department of Chemical Engineering and Biotechnology
- National Taipei University of Technology
- Taipei 10608
- Taiwan
| | - Hui-Min Wang
- Department of Chemical Engineering and Biotechnology
- National Taipei University of Technology
- Taipei 10608
- Taiwan
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21
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Fang J, Zhang H, Wei W, Li Y, Yue X, Jiang Z. A low onset voltage WORM type polymer memory based on functional PES. J Appl Polym Sci 2015. [DOI: 10.1002/app.42644] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Jiyong Fang
- Alan G. MacDiarmid Institute; College of Chemistry; Jilin University; 2699 Qianjin street Changchun 130012 People's Republic of China
| | - Haibo Zhang
- Alan G. MacDiarmid Institute; College of Chemistry; Jilin University; 2699 Qianjin street Changchun 130012 People's Republic of China
| | - Wei Wei
- Alan G. MacDiarmid Institute; College of Chemistry; Jilin University; 2699 Qianjin street Changchun 130012 People's Republic of China
| | - Yunxi Li
- Alan G. MacDiarmid Institute; College of Chemistry; Jilin University; 2699 Qianjin street Changchun 130012 People's Republic of China
| | - Xigui Yue
- Alan G. MacDiarmid Institute; College of Chemistry; Jilin University; 2699 Qianjin street Changchun 130012 People's Republic of China
| | - Zhenhua Jiang
- Alan G. MacDiarmid Institute; College of Chemistry; Jilin University; 2699 Qianjin street Changchun 130012 People's Republic of China
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22
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Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices. Polym J 2015. [DOI: 10.1038/pj.2015.87] [Citation(s) in RCA: 60] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
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23
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Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics. ELECTRONICS 2015. [DOI: 10.3390/electronics4030424] [Citation(s) in RCA: 104] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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24
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Kang M, Khim D, Park WT, Kim J, Kim J, Noh YY, Baeg KJ, Kim DY. Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory. Sci Rep 2015. [PMID: 26201747 PMCID: PMC4511867 DOI: 10.1038/srep12299] [Citation(s) in RCA: 44] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022] Open
Abstract
Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.
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Affiliation(s)
- Minji Kang
- Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
| | - Dongyoon Khim
- Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, UK
| | - Won-Tae Park
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
| | - Jihong Kim
- Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
| | - Juhwan Kim
- Department of Chemical Engineering and Materials Science, University of California, Irvine, Irvine, California 92697, United States
| | - Yong-Young Noh
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
| | - Kang-Jun Baeg
- Nanocarbon Materials Research Group, Korea Electrotechnology Research Institute (KERI) 12 Bulmosan-ro 10Beon-gil, Seongsan-gu, Changwon, Gyeongsangnam-do 642-120, Republic of Korea
| | - Dong-Yu Kim
- Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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25
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Zhou Y, Han ST, Yan Y, Zhou L, Huang LB, Zhuang J, Sonar P, Roy VAL. Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends. Sci Rep 2015; 5:10683. [PMID: 26029856 PMCID: PMC4450595 DOI: 10.1038/srep10683] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2015] [Accepted: 04/17/2015] [Indexed: 11/25/2022] Open
Abstract
Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.
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Affiliation(s)
- Ye Zhou
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Su-Ting Han
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Yan Yan
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Li Zhou
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Long-Biao Huang
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Jiaqing Zhuang
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Prashant Sonar
- School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), GPO Box 2434, Brisbane, QLD 4001, Australia
| | - V. A. L. Roy
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
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26
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Synthesis of blue light emitting and electrochromic polyimidothioethers with diphenylpyrenylamine chromophore via thiol-ene reaction. JOURNAL OF POLYMER RESEARCH 2015. [DOI: 10.1007/s10965-015-0754-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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27
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Polymer memory devices with widely tunable memory characteristics based on functional copolynaphthalimides bearing varied fluorene and triphenylamine moieties. Eur Polym J 2015. [DOI: 10.1016/j.eurpolymj.2014.12.001] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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28
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Non-volatile organic memory with sub-millimetre bending radius. Nat Commun 2014; 5:3583. [DOI: 10.1038/ncomms4583] [Citation(s) in RCA: 182] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2013] [Accepted: 03/06/2014] [Indexed: 12/12/2022] Open
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29
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Yu AD, Tung WY, Chiu YC, Chueh CC, Liou GS, Chen WC. Multilevel Nonvolatile Flexible Organic Field-Effect Transistor Memories Employing Polyimide Electrets with Different Charge-Transfer Effects. Macromol Rapid Commun 2014; 35:1039-45. [DOI: 10.1002/marc.201400089] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2014] [Revised: 03/06/2014] [Indexed: 11/08/2022]
Affiliation(s)
- An-Dih Yu
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Wei-Yao Tung
- Institute of Polymer Science and Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Guey-Sheng Liou
- Institute of Polymer Science and Engineering; National Taiwan University; Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering; National Taiwan University; Taipei 10617 Taiwan
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30
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Shi L, Tian G, Ye H, Qi S, Wu D. Volatile static random access memory behavior of an aromatic polyimide bearing carbazole-tethered triphenylamine moieties. POLYMER 2014. [DOI: 10.1016/j.polymer.2013.12.046] [Citation(s) in RCA: 36] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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31
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Polycyclic arene-based D-A polyimide electrets for high-performance n-type organic field effect transistor memory devices. ACTA ACUST UNITED AC 2013. [DOI: 10.1002/pola.26983] [Citation(s) in RCA: 31] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023]
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32
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Han ST, Zhou Y, Roy VAL. Towards the development of flexible non-volatile memories. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:5425-49. [PMID: 24038631 DOI: 10.1002/adma.201301361] [Citation(s) in RCA: 193] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2013] [Revised: 05/25/2013] [Indexed: 05/10/2023]
Abstract
Flexible non-volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non-volatile memories.
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Affiliation(s)
- Su-Ting Han
- Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR
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33
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Kurosawa T, Yu AD, Higashihara T, Chen WC, Ueda M. Inducing a high twisted conformation in the polyimide structure by bulky donor moieties for the development of non-volatile memory. Eur Polym J 2013. [DOI: 10.1016/j.eurpolymj.2013.07.016] [Citation(s) in RCA: 21] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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34
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Yu AD, Kurosawa T, Chou YH, Aoyagi K, Shoji Y, Higashihara T, Ueda M, Liu CL, Chen WC. Tunable electrical memory characteristics using polyimide:polycyclic aromatic compound blends on flexible substrates. ACS APPLIED MATERIALS & INTERFACES 2013; 5:4921-4929. [PMID: 23646879 DOI: 10.1021/am4006594] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Resistance switching memory devices with the configuration of poly(ethylene naphthalate)(PEN)/Al/polyimide (PI) blend/Al are reported. The active layers of the PI blend films were prepared from different compositions of poly[4,4'-diamino-4″-methyltriphenylamine-hexafluoroisopropylidenediphthalimide] (PI(AMTPA)) and polycyclic aromatic compounds (coronene or N,N-bis[4-(2-octyldodecyloxy)phenyl]-3,4,9,10-perylenetetracarboxylic diimide (PDI-DO)). The additives of large π-conjugated polycyclic compounds can stabilize the charge transfer complex induced by the applied electric field. Thus, the memory device characteristic changes from the volatile to nonvolatile behavior of flash and write-once-read-many times (WORM) as the additive contents increase in both blend systems. The main differences between these two blend systems are the threshold voltage values and the additive content to change the memory behavior. Due to the stronger accepting ability and higher electron affinity of PDI-DO than those of coronene, the PI(AMTPA):PDI-DO blend based memory devices show a smaller threshold voltage and change the memory behavior in a smaller additive content. Besides, the memory devices fabricated on a flexible PEN substrate exhibit an excellent durability upon the bending conditions. These tunable memory performances of the developed PI/polycyclic aromatic compound blends are advantageous for future advanced memory device applications.
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Affiliation(s)
- An-Dih Yu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan
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35
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Chen CJ, Hu YC, Liou GS. Linkage effect on the memory behavior of sulfonyl-containing aromatic polyether, polyester, polyamide, and polyimide. Chem Commun (Camb) 2013; 49:2536-8. [PMID: 23423191 DOI: 10.1039/c3cc40411k] [Citation(s) in RCA: 34] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Sulfonyl-containing aromatic polymers DSPE, DSPET, DSPA, and DSPI consisting of a triphenylamine moiety were synthesized and the memory behavior was investigated. By choosing the suitable linkage between the electron donor and acceptor, tunable memory properties (from insulator to different retention time SRAM) could be achieved.
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Affiliation(s)
- Chih-Jung Chen
- Functional Polymeric Materials Laboratory, Institute of Polymer Science and Engineering, National Taiwan University, 1 Roosevelt Road, 4th Sec., Taipei 10617, Taiwan
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36
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Kurosawa T, Higashihara T, Ueda M. Polyimide memory: a pithy guideline for future applications. Polym Chem 2013. [DOI: 10.1039/c2py20632c] [Citation(s) in RCA: 158] [Impact Index Per Article: 14.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
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37
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Chen CJ, Hu YC, Liou GS. Linkage and acceptor effects on diverse memory behavior of triphenylamine-based aromatic polymers. Polym Chem 2013. [DOI: 10.1039/c3py00500c] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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38
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Sun Z, Liu M, Yi L, Wang Y. High glass transition of organo-soluble copolyimides derived from a rigid diamine with tert-butyl-substituted triphenylpyridine moiety. RSC Adv 2013. [DOI: 10.1039/c3ra00147d] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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Kurosawa T, Lai YC, Yu AD, Wu HC, Higashihara T, Ueda M, Chen WC. Effects of the acceptor conjugation length and composition on the electrical memory characteristics of random copolyimides. ACTA ACUST UNITED AC 2012. [DOI: 10.1002/pola.26502] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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