Ultrahigh UV Responsivity Quasi-Two-Dimensional BixSn1-xO2 Films Achieved through Surface Reaction

In this study, quasi-two-dimensional BixSn1-xO2 (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 103 s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO2, and Na2SO3 after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.

Organic bromide-assisted one-pot synthesis of Bi2S3 nanorods using DMSO as a sulfur supply

Metal sulfide semiconductor nanorods have attracted much attention because of their potential use as a photo-responsive component of optical/electrical devices. In the present study, we report a simple solvothermal method...

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.

Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga₂O₃, SnO₂, TiO₂, and WO₃ are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI₂). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.

Tin dioxide-based nanomaterials as anodes for lithium-ion batteries

The development of new electrode materials for lithium-ion batteries (LIBs) has attracted significant attention because commercial anode materials in LIBs, like graphite, may not be able to meet the increasing energy demand of new electronic devices. Tin dioxide (SnO2) is considered as a promising alternative to graphite due to its high specific capacity. However, the large volume changes of SnO2 during the lithiation/delithiation process lead to capacity fading and poor cycling performance. In this review, we have summarized the synthesis of SnO2-based nanomaterials with various structures and chemical compositions, and their electrochemical performance as LIB anodes. This review addresses pure SnO2 nanomaterials, the composites of SnO2 and carbonaceous materials, the composites of SnO2 and transition metal oxides, and other hybrid SnO2-based materials. By providing a discussion on the synthesis methods and electrochemistry of some representative SnO2-based nanomaterials, we aim to demonstrate that electrochemical properties can be significantly improved by modifying chemical composition and morphology. By analyzing and summarizing the recent progress in SnO2 anode materials, we hope to show that there is still a long way to go for SnO2 to become a commercial LIB electrode and more research has to be focused on how to enhance the cycling stability.

Construction of Ag3PO4/SnO2 Heterojunction on Carbon Cloth with Enhanced Visible Light Photocatalytic Degradation

In this study, the Ag3PO4/SnO2 heterojunction on carbon cloth (Ag3PO4/SnO2/CC) was successfully fabricated via a facile two-step process. The results showed that the Ag3PO4/SnO2/CC heterojunction exhibited a remarkable photocatalytic performance for the degradation of Rhodamine B (RhB) and methylene blue (MB), under visible light irradiation. The calculated k values for the degradation of RhB and MB over Ag3PO4/SnO2/CC are 0.04716 min−1 and 0.04916 min−1, which are higher than those calculated for the reactions over Ag3PO4/SnO2, Ag3PO4/CC and SnO2/CC, respectively. The enhanced photocatalytic activity could mainly be attributed to the improved separation efficiency of photogenerated electron-hole pairs, after the formation of the Ag3PO4/SnO2/CC heterojunction. Moreover, carbon cloth with a large specific surface area and excellent conductivity was used as the substrate, which helped to increase the contact area of dye solution with photocatalysts and the rapid transfer of photogenerated electrons. Notably, when compared with the powder catalyst, the catalysts supported on carbon cloth are easier to quickly recycle from the pollutant solution, thereby reducing the probability of recontamination.

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction

Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga₂O₃ heterojunction was developed and investigated. The β-Ga₂O₃ layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ([Formula: see text] 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW^-1 under a 245-nm illumination (27 μWcm^-2) and the maximum detectivity (D*) of 3.14 × 10¹² cmHz^1/2 W^-1, which was attributed to the p-NiO/n-β-Ga₂O₃ heterojunction.

Hollow-Structured Layered Double Hydroxide: Structure Evolution Induced by Gradient Composition

The rational design of hollow-structured materials with high specific area, advanced mass transfer, and exposure of selected sites is of great significance in both fundamental scientific research and applicable industrialization fields. In this work, we report a CoAl layered double hydroxides (LDH) nanoring evolved from integrate nanosheet in a urea hydrolysis process, showing enhanced oxygen reduction reaction activity. Detailed investigations into the evolution nature suggest that a gradient-increased Al³⁺ composition exists in the core region of the nanosheet arised from distinctly lower solubility of Al³⁺ than Co²⁺ in the synthesis; therefore, the selective etching of Al³⁺ by OH^- produced from urea hydrolysis leads to the formation of nanoring structure. Probed as an oxygen reduction reaction catalyst, the CoAl-LDH nanoring illustrates a half-wave potential lowered by around 110 mV compared to the integrate nanosheet counterpart, which might be due to the exposure of more edge sites with higher activity. This work paves a novel route for fabricating hollow-structured Al-contained metal hydroxides with defined outer edge and inner voids for multiple purposes.

High photosensitivity and external quantum efficiency photosensors achieved by a cable like nanoarchitecture

The poor intrinsic flexibility of semiconducting ceramic materials hinders their applications in wearable electronics. Here, we present a highly efficient photosensor with extreme levels of bending and repeatable resilience based on cable-like structure. The ZnO@TiO₂ cable-like photosensor demonstrates an ultra-high external quantum efficiency (2.82 × 10⁶%) and photosensitivity (1.27 × 10⁵) upon UV light illumination at 254 nm, and a stability of 85% at the small curvature radius of 0.5 mm. Moreover, the ZnO@TiO₂ photodetector demonstrates extremely stable flexibility over 1000 bending cycles. This specific nanoscale architecture has future potential applications for soft integrated electronics.

Flexible Sensors—From Materials to Applications

Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.

Hollow multi-shell structured SnO2 with enhanced performance for ultraviolet photodetectors

Hollow multi-shell structured (HoMS) SnO₂ was utilized as an active material to enhance ultraviolet photodetector performance.

Insights into non-noble metal based nanophotonics: exploration of Cr-coated ZnO nanorods for optoelectronic applications

Herein, the room temperature photoluminescence and Raman spectra of hydrothermally grown ZnO nanorods coated with Cr are investigated for optoelectronic applications. A thorough examination of the photoluminescence spectra of Cr coated ZnO nanorods showed the suppression of deep level emissions by more than twenty five times with Cr coating compared to that of pristine ZnO nanorods. Moreover, the underlying mechanism was proposed and can be attributed to the formation of Schottky contacts between Cr and ZnO resulting in defect passivation, weak exciton–plasmon coupling, enhanced electric field effect and formation of hot carriers due to interband transitions. Interestingly, with the increase in sputtering time, the ratio of the intensities corresponding to the band gap emission and deep level emission was observed to increase from 6.2 to 42.7, suggesting its application for UV only emission. Further, a planar photodetector was fabricated (Ag–ZnO–Ag planar configuration) and it was observed that the dark current value got reduced by more than ten times with Cr coating, thereby opening up its potential for transistor applications. Finally, Cr coated ZnO nanorods were employed for green light sensing. Our results demonstrated that ZnO nanorods decorated with Cr shed light on developing stable and high-efficiency non-noble metal based nanoplasmonic devices such as photodetectors, phototransistors and solar cells.

Herein, the room temperature photoluminescence and Raman spectra of hydrothermally grown ZnO nanorods coated with Cr are investigated for optoelectronic applications.

Flexible Photodetectors Based on Novel Functional Materials

Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.

An ultrafast-temporally-responsive flexible photodetector with high sensitivity based on high-crystallinity organic-inorganic perovskite nanoflake

Flexible cameras are important early warning wearable devices to protect security personnel from dangerous events. However, the desired key component of flexible cameras, a highly-sensitive and high-response-speed flexible photodetector, is difficult to create using conventional inorganic semiconductors. Here, we propose a low-temperature synthesis method to grow perovskite nanoflakes with high flexibility and crystallinity on a polymeric substrate. Furthermore, a high-performance flexible photodetector based on the obtained perovskite nanoflakes was fabricated. Its photoresponsivity rivals the highest values reported and, simultaneously, its response speed is faster than those of most current flexible photodetectors by 1-3 orders of magnitude.

Monolithic and Flexible ZnS/SnO2 Ultraviolet Photodetectors with Lateral Graphene Electrodes

A continuing trend of miniaturized and flexible electronics/optoelectronic calls for novel device architectures made by compatible fabrication techniques. However, traditional layer-to-layer structures cannot satisfy such a need. Herein, a novel monolithic optoelectronic device fabricated by a mask-free laser direct writing method is demonstrated in which in situ laser induced graphene-like materials are employed as lateral electrodes for flexible ZnS/SnO₂ ultraviolet photodetectors. Specifically, a ZnS/SnO₂ thin film comprised of heterogeneous ZnS/SnO₂ nanoparticles is first coated on polyimide (PI) sheets by a solution process. Then, CO₂ laser irradiation ablates designed areas of the ZnS/SnO₂ thin film and converts the underneath PI into highly conductive graphene as the lateral electrodes for the monolithic photodetectors. This in situ growth method provides good interfaces between the graphene electrodes and the semiconducting ZnS/SnO₂ resulting in high optoelectronic performance. The lateral electrode structure reduces total thickness of the devices, thus minimizing the strain and improving flexibility of the photodetectors. The demonstrated lithography-free monolithic fabrication is a simple and cost-effective method, showing a great potential for developement into roll-to-roll manufacturing of flexible electronics.

Boosting Fiber-Shaped Photodetectors via "Soft" Interfaces

Lightweight, flexible fiber-shaped devices that can be woven into wearable electronic products have received great attention in recent years. However, the bending and poor interfaces of fiber-shaped devices typically lead to ineluctable performance degradation, which is still a great challenge yet to be dealt with. Here, taking a fiber-shaped photodetector as an example, we proposed an effective strategy, constructing inorganic-organic-graphene hybrid interfaces on a single fiber, to greatly improve the performances of fiber-shaped device. In the proposed structure, the ZnO nanorod array is grown vertically on the surface of a Zn wire (center core) and then wrapped by PVK and graphene (outmost layer) as the two outer layers. These "soft" interfaces successfully built compact contacts between various functional layers even on curved interfaces, which markedly reduced the contact resistance. Meanwhile, the whole structure also exhibited excellent durability toward the bending operations. Evidently, the I_light/I_dark ratio and photoresponsivity under bias of 0.5 V are as high as 7.2 and 0.9 A/W. In particular, the photoresponse speed has been greatly improved with the rise time of 280 ms, which was 1 order of magnitude faster than that of other fiber-shaped photodetectors without the above "soft" interfaces.

A high-performance nanobridged MoO3 UV photodetector based on nanojunctions with switching characteristics

Ultraviolet photodetectors (UVPDs) were fabricated via the in situ growth of orthorhombic MoO₃ nanobelts among interdigital electrodes. Two types of nanojunction, touching and interpenetration, were formed between neighboring nanobelts at different growth conditions. The photoresponse mechanism of the UVPDs greatly depends on the type of nanojunction. Nanojunctions formed with touching nanobelts possess switching characteristics due to the barrier height variation along with the UV illumination. The UVPD with the touching structure exhibits low noise, high UV sensitivity and fast speed, having a dark current of 1.4 nA, an on/off ratio of over 100 and a response time of below 1 s, at an applied voltage of 10 V. The enhanced performance can be attributed to the switching characteristics of the touching nanojunction.

A high-performance TiO2 nanowire UV detector assembled by electrospinning

A transparent, flexible and high-performance TiO₂ ultraviolet sensor has been fabricated by electrospinning.

Construction of hybrid multi-shell hollow structured CeO2–MnOx materials for selective catalytic reduction of NO with NH3

Multi-shell CeO₂–MnO_x hollow spheres with superior catalytic performance were prepared via modification of the calcination rate.

An organic-inorganic broadband photodetector based on a single polyaniline nanowire doped with quantum dots

The capability to detect light over a broad waveband is highly important for practical optoelectronic applications and has been achieved with photodetectors of one-dimensional inorganic nanomaterials such as Si, ZnO, and GaN. However, achieving high speed responsivity over an entire waveband within such a photodetector remains a challenge. Here we demonstrate a broadband photodetector using a single polyaniline nanowire doped with quantum dots that is highly responsive over a broadband from 350 to 700 nm. The high responsivity is due to the high density of trapping states at the enormous interfaces between polyaniline and quantum dots. The interface trapping can effectively reduce the recombination rate and enhance the efficiency for light detection. Furthermore, a tunable spectral range can be achieved by size-based spectral tuning of quantum dots. The use of organic-inorganic hybrid polyaniline nanowires in broadband photodetection may offer novel functionalities in optoelectronic devices and circuits.

An overview on emerging photoelectrochemical self-powered ultraviolet photodetectors

In recent years, as a new member of ultraviolet photodetectors (UV-PDs), photoelectrochemical UV-PDs (PEC UV-PDs) have received great attention. Compared to conventional photoconductors, PEC UV-PDs exhibit a number of merits, including low cost, environmentally friendly nature, being self-powered, and fast response. This tutorial review provides a comprehensive introduction to this research field, covering from the basics of performance evaluation of PEC UV-PDs, the state-of-the-art advances in structural design, electrolyte matching, and electrode fabrication of PEC UV-PDs, to the integration of multiple functions into a PEC UV-PD. In the end, we present our perspectives on the future development of PEC UV-PDs and highlight the key technical challenges in aiming to stimulate further developments in this research field.

Defect structure and optical phonon confinement in ultrananocrystalline BixSn1−xO2 (x = 0, 0.03, 0.05, and 0.08) synthesized by a sonochemical method

Relaxation of the zone-centre optical phonon selection rule due to size effect causes interesting changes in vibrational spectra.

High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions

We report on the significant performance enhancement of SnO₂ thin film ultraviolet (UV) photodetectors (PDs) through incorporation of CuO/SnO₂p-n nanoscale heterojunctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in ambient to form CuO. We attribute the performance improvements to enhanced UV absorption, demonstrated both experimentally and using optical simulations, and electron transfer facilitated by the nanoheterojunctions. The peak responsivity of the PDs at a bias of 0.2 V improved from 1.9 A/W in a SnO₂-only device to 10.3 A/W after CuO deposition. The wavelength-dependent photocurrent-to-dark current ratio was estimated to be ~ 592 for the CuO/SnO₂ PD at 290 nm. The morphology, distribution of nanoparticles, and optical properties of the CuO/SnO₂ heterostructured thin films are also investigated.

Metallic Sn spheres and SnO2@C core-shells by anaerobic and aerobic catalytic ethanol and CO oxidation reactions over SnO2 nanoparticles

SnO₂ has been studied intensely for applications to sensors, Li-ion batteries and solar cells. Despite this, comparatively little attention has been paid to the changes in morphology and crystal phase that occur on the metal oxide surface during chemical reactions. This paper reports anaerobic and aerobic ethanol and CO oxidation reactions over SnO₂ nanoparticles (NPs), as well as the subsequent changes in the nature of the NPs. Uniform SnO₂@C core-shells (10 nm) were formed by an aerobic ethanol oxidation reaction over SnO₂ NPs. On the other hand, metallic Sn spheres were produced by an anaerobic ethanol oxidation reaction at 450 °C, which is significantly lower than that (1200 °C) used in industrial Sn production. Anaerobic and aerobic CO oxidation reactions were also examined. The novelty of the methods for the production of metallic Sn and SnO₂@C core-shells including other anaerobic and aerobic reactions will contribute significantly to Sn and SnO₂-based applications.

Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors

Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.

Ultraviolet photodetectors with high photosensitivity based on type-II ZnS/SnO2 core/shell heterostructured ribbons

Semiconducting heterostructures with type-II band structure have attracted much attention due to their novel physical properties and wide applications in optoelectronics. Herein, we report, for the first time, a controlled synthesis of type-II ZnS/SnO2 heterostructured ribbon composed of SnO2 nanoparticles that uniformly cover the surface of ZnS ribbon via a simple and versatile thermal evaporation approach. Structural analysis indicated that the majority of SnO2 nanoparticles have an equivalent zone axis, i.e., <-313> of rutile SnO2, which is perpendicular to ±(2-1-10) facets (top/down surfaces) of ZnS ribbon. For those SnO2 nanoparticles decorated on ±(01-10) facets (side surfaces) of ZnS ribbon, an epitaxial relationship of (01-10)ZnO//(020)SnO2 and [2-1-10]ZnO//[001]SnO2 was identified. To explore their electronic and optoelectronic properties, we constructed field-effect transistors from as-prepared new heterostructures, which exhibited an n-type characteristic with an on/off ratio of ∼10(3) and a fast carrier mobility of ∼33.2 cm2 V(-1) s(-1). Owing to the spatial separation of photogenerated electron-hole pairs from type-II band alignment together with the good contacts between electrodes and ribbon, the resultant photodetector showed excellent photoresponse properties, including large photocurrent, high sensitivity (external quantum efficiency as high as ∼2.4×10(7)%), good stability and reproducibility, and relatively fast response speed. Our results suggest great potential of ZnS/SnO2 heterostructures for efficient UV light sensing, and, more importantly, signify the advantages of type-II semiconducting heterostructures for construction of high-performance nano-photodetectors.

Self-assembly of SnO2 quantum dots into hierarchically ordered structures assisted by oriented attachment

Taking SnO₂ quantum dots with random orientation as a precursor, NaOH induces self-assembly of SnO₂ dots to form the nanowires, side-by-side attachment of which generates hierarchically ordered structures.

Photosensing performance of branched CdS/ZnO heterostructures as revealed by in situ TEM and photodetector tests

CdS/ZnO branched heterostructures have been successfully synthesized by combining thermal vapour deposition and a hydrothermal method. Drastic optoelectronic performance enhancement of such heterostructures was revealed, compared to plain CdS nanobelts, as documented by comparative in situ optoelectronic studies on corresponding individual nanostructures using an originally designed laser-compatible transmission electron microscopy (TEM) technique. Furthermore, flexible thin-film based photodetectors based on standard CdS nanobelts and newly prepared CdS/ZnO heterostructures were fabricated on PET substrates, and comparative photocurrent and photo-responsivity measurements thoroughly verified the in situ TEM results. The CdS/ZnO branched heterostructures were found to have better performance than standard CdS nanobelts for optoelectronic applications with respect to the photocurrent to dark current ratio and responsivity.

Single-crystalline ZnO spherical particles by pulsed laser irradiation of colloidal nanoparticles for ultraviolet photodetection

We report the formation and ultraviolet (UV) photodetection of single-crystalline spherical ZnO particles by pulsed laser irradiation of commercial ZnO nanoparticles in water. The phase and microstructure analysis before and after laser irradiation reveals a crystal size increase and shape transformation from irregular to spherical. Time-dependent laser irradiation confirmed that fusion is the reason for nanoparticle growth up to single-crystalline spherical particles. After rapid cooling, they maintain size and shape and possess unique optical and electrical properties. Because of the single-crystalline feature and smooth surfaces, high and selective sensing of ultraviolet light is observed.

High-performance BiOBr ultraviolet photodetector fabricated by a green and facile interfacial self-assembly strategy

We have fabricated a BiOBr film for the first time through water-air interfacial self-assembly, which is a green, easily processable and environmentally friendly strategy. Moreover, an ultraviolet photodetector based on the BiOBr film exhibited excellent stability and a fast response time.

A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.