Numerical characterization of the electronic and optical properties of plumbene/hBN heterobilayer using first-principles study

We present a novel plumbene/hexagonal boron nitride (hBN) heterobilayer with intriguing structural, electronic, and optical properties. Three different stacking patterns of the bilayer are proposed and studied under the framework of density functional theory using first-principles calculations. All the stacking configurations display direct band gaps ranging from 0.399 eV to 0.432 eV in the presence of spin orbit coupling (SOC), whereas pristine plumbene possesses an indirect band gap considering SOC. Based on binding energy calculations, the structures are found to be stable and, consequently, feasible for physical implementation. All three structures exhibit low effective mass, ∼0.20m0 for both electrons and holes, which suggests improved transport characteristics of the plumbene/hBN based electronic devices. The projected density of states reveals that the valence and conduction band peaks around Fermi energy are dominated by the contributions from the plumbene layer of the heterobilayer. Therefore, the hBN layer is a viable candidate as a substrate for plumbene since charge carriers will only travel through the plumbene layer. Biaxial strain is employed to explore the dependence of the electronic properties like bandgap and effective mass of the heterobilayer on applied strain. We find that applied biaxial compressive strain can induce switching from the semiconducting to metallic state of the material. In addition, we explore various optical characteristics of both pristine plumbene and plumbene/hBN. The optical properties of the heterobilayer signify its potential applications in solar cells as well as in UV photodetectors.

Synthesis of Nano-Structured Ge as Transmissive or Reflective Saturable Absorber for Mode-Locked Fiber Laser

Amorphous-Ge (α-Ge) or free-standing nanoparticles (NPs) synthesized via hydrogen-free plasma-enhanced chemical vapor deposition (PECVD) were applied as transmissive or reflective saturable absorbers, respectively, for starting up passively mode-locked erbium-doped fiber lasers (EDFLs). Under a threshold pumping power of 41 mW for mode-locking the EDFL, the transmissive α-Ge film could serve as a saturable absorber with a modulation depth of 52-58%, self-starting EDFL pulsation with a pulsewidth of approximately 700 fs. Under a high power of 155 mW, the pulsewidth of the EDFL mode-locked by the 15 s-grown α-Ge was suppressed to 290 fs, with a corresponding spectral linewidth of 8.95 nm due to the soliton compression induced by intra-cavity self-phase modulation. The Ge-NP-on-Au (Ge-NP/Au) films could also serve as a reflective-type saturable absorber to passively mode-lock the EDFL with a broadened pulsewidth of 3.7-3.9 ps under a high-gain operation with 250 mW pumping power. The reflection-type Ge-NP/Au film was an imperfect mode-locker, owing to their strong surface-scattered deflection in the near-infrared wavelength region. From the abovementioned results, both ultra-thin α-Ge film and free-standing Ge NP exhibit potential as transmissive and reflective saturable absorbers, respectively, for ultrafast fiber lasers.

Recent progress in emergent two-dimensional silicene

Although graphene is by far the most famous example of two-dimensional (2D) materials, which exhibits a wealth of exotic and intriguing properties, it suffers from a severe drawback. In this regard, the exploration of silicene, the silicon analog of the graphene material, has attracted substantial interest in the past decade. This review therefore provides a comprehensive survey of recent theoretical and experimental works on this 2D material. We first overview the distinctive structures and properties of silicene, including mechanical, electronic, and spintronic properties. We then discuss the growth and experimental characterization of silicene on Ag(111) and other different substrates, providing insights into the different phases or atomic arrangements of silicene observed on the metallic surfaces as well as on its electronic structures. Then, the recent state-of-the-art applications of silicene are summarized in section 4 with the aim to break the scientific and engineering barriers for application in nanoelectronics, sensors, energy storage devices, electrode materials, and quantum technology. Finally, the concluding remarks and the future prospects of silicene are also provided.

Two-dimensional germanium islands with Dirac signature on Ag2Ge surface alloy

Two-dimensional (2D) Dirac materials have attracted intense research efforts due to their promise for applications ranging from field-effect transistors and low-power electronics to fault-tolerant quantum computation. One key challenge is to fabricate 2D Dirac materials hosting Dirac electrons. Here, monolayer germanene is successfully fabricated on a Ag₂Ge surface alloy. Scanning tunneling spectroscopy measurements revealed a linear energy dispersion relation. The latter was supported by density functional theory calculations. These results demonstrate that monolayer germanene can be realistically fabricated on a Ag₂Ge surface alloy. The finding opens the door to exploration and study of 2D Dirac material physics and device applications.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Ab initio investigation of topological phase transitions induced by pressure in trilayer van der Waals structures: the example of h-BN/SnTe/h-BN

The combination of two-dimensional crystals through the formation of van der Waals bilayers, trilayers, and heterostructures has been considered a promising route to design new materials due to the possibility of tuning their properties through the control of the number of layers, alloying pressure, strain, and other tuning mechanisms. Here, we report a density functional theory study on the interlayer phonon coupling and electronic structure of the trilayer h-BN/SnTe/h-BN, and the effects of pressure on the encapsulation of this trilayer system. Our findings demonstrated the establishment of a type I junction in the system, with a trivial bandgap of 0.55 eV, which is 10 % lower than the free-standing SnTe one. The almost inert h-BN capping layers allow a topological phase transition at a pressure of 13.5 GPa, in which the system evolves from a trivial insulator to a topological insulator. In addition, with further increase of the pressure up to 35 GPa, the non-trivial energy bandgap increases up to 0.30 eV. This behavior is especially relevant to allow experimental access to topological properties of materials, since large non-trivial energy bandgaps are required.

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices. By using first-principles calculations, here, we systematically investigate the effect of the GaGeTe substrate on the electronic properties of monolayer germanene. Linear dichroism of the Dirac-cone like band dispersion and higher carrier mobility (9.7 × 103 cm2 V-1 s-1) in the Ge/GaGeTe heterostructure (HTS) are found to be preserved compared to that of free-standing germanene. Remarkably, the band structure of HTS can be flexibly modulated by applying bias voltage or strain. A prototype data storage device FET based on Ge/GaGeTe HTS is proposed, which presents a promising high performance platform with a tunable band gap and high carrier mobility.

Graphene-based heterostructures with moiré superlattice that preserve the Dirac cone: a first-principles study

In van der Waals heterostructures consisting of graphene and a substrate, lattice mismatch often leads to a moiré pattern with a huge supercell, preventing its treatment within first-principles calculations. Previous theoretical works considered mostly simple stacking models such as AB, AA with straining the lattice of graphene to match that of the substrate. Here, we propose a moiré superlattice build from graphene and porous graphene or graphyne like monolayers, having a lower interlayer binding energy, needing little strain in order to match the lattices. In contrast to the results from the simple stacking models, the present ab initio calculations for the moiré superlattices show different properties in lattice structure, energy, and band structures. For example, the Dirac cone at the K point is preserved and a linear energy dispersion near the Fermi level is obtained.

Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111)

Large-scale two-dimensional sheets of graphene-like germanium, namely, germanene, have been epitaxially prepared on Ag(111) thin films grown on Ge(111), using a segregation method, differing from molecular beam epitaxy used in previous reports. From the scanning tunneling microscopy (STM) images, the surface is completely covered with an atom-thin layer showing a highly ordered long-range superstructure in wide scale. Two types of protrusions, named hexagon and line, form a (7√7 × 7√7) R19.1° supercell with respect to Ag(111), with a very large periodicity of 5.35 nm. Auger electron spectroscopy and high-resolution synchrotron radiation photoemission spectroscopy demonstrate that Ge atoms are segregated on the Ag(111) surface as an overlayer. Low-energy electron diffraction clearly shows incommensurate "(1.35 × 1.35)" R30° spots, corresponding to a lattice constant of 0.39 nm, in perfect accord with close-up STM images, which clearly reveal an internal honeycomb arrangement with corresponding parameter and low buckling within 0.01 nm. As this 0.39 nm value is in good agreement with the theoretical lattice constant of free-standing germanene, conclusively, the segregated Ge atoms with trivalent bonding in honeycomb configuration form a characteristic two-dimensional germanene-like structure.

Ideal inert substrates for planar antimonene: h-BN and hydrogenated SiC(0001)

Planar antimonene, as one of the most promising two-dimensional materials, was recently obtained on a Ag(111) substrate [Y. Shao, Z. L. Liu, et al., Nano Lett., 2018, 18, 2133]. However, its particular electronic properties are severely degraded due to the substrate, making its further study and practical applications challenging. Here, using first-principles calculations, we propose that h-BN and hydrogenated SiC(0001) are extraordinary substrates of planar antimonene. Their interactions with planar antimonene exhibit low binding energies and large interlayer distances, and are typical van der Waals interactions. Most importantly, the bands of planar antimonene near the Fermi level are perfectly preserved, with the bands of h-BN and hydrogenated SiC(0001) lying away from the Fermi level. Moreover, such features are inert to the stacking patterns for both systems, making them suitable for practical applications. Our results will greatly broaden the scientific and technological impact of planar antimonene.

Functionalization of group-14 two-dimensional materials

The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp² and sp³ orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

Germanene on single-layer ZnSe substrate: novel electronic and optical properties

In this work, the structural, electronic and optical properties of germanene and ZnSe substrate nanocomposites have been investigated using first-principles calculations. We found that the large direct-gap ZnSe semiconductors and zero-gap germanene form a typical orbital hybridization heterostructure with a strong binding energy, which shows a moderate direct band gap of 0.503 eV in the most stable pattern. Furthermore, the heterostructure undergoes semiconductor-to-metal band gap transition when subjected to external out-of-plane electric field. We also found that applying external strain and compressing the interlayer distance are two simple ways of tuning the electronic structure. An unexpected indirect-direct band gap transition is also observed in the AAII pattern via adjusting the interlayer distance. Quite interestingly, the calculated results exhibit that the germanene/ZnSe heterobilayer structure has perfect optical absorption in the solar spectrum as well as the infrared and UV light zones, which is superior to that of the individual ZnSe substrate and germanene. The staggered interfacial gap and tunability of the energy band structure via interlayer distance and external electric field and strain thus make the germanene/ZnSe heterostructure a promising candidate for field effect transistors (FETs) and nanoelectronic applications.

Quantum anomalous Hall effect in a stable 1T-YN2 monolayer with a large nontrivial bandgap and a high Chern number

The quantum anomalous Hall (QAH) effect is a topologically nontrivial phase, characterized by a non-zero Chern number defined in the bulk and chiral edge states in the boundary. Using first-principles calculations, we demonstrate the presence of the QAH effect in a 1T-YN2 monolayer, which was recently predicted to be a Dirac half metal without spin-orbit coupling (SOC). We show that the inclusion of SOC opens up a large nontrivial bandgap of nearly 0.1 eV in the electronic band structure. This results in the nontrivial bulk topology, which is confirmed by the calculation of Berry curvature, anomalous Hall conductance and the presence of chiral edge states. Remarkably, a QAH phase of high Chern number C = 3 is found, and there are three corresponding gapless chiral edge states emerging inside the bulk gap. Different substrates are also chosen to study the possible experimental realization of the 1T-YN2 monolayer, while retaining its nontrivial topological properties. Our results open a new avenue in searching for QAH insulators with high temperature and high Chern numbers, which can have nontrivial practical applications.

Structure, Stability, and Kinetics of Vacancy Defects in Monolayer PtSe2: A First-Principles Study

The recent epitaxial growth of monolayer PtSe₂ has raised hope for its novel applications in valleytronic, spintronic, and energy-harvesting devices. Compared with 2H-phase transition-metal dichalcogenides, the 1T-phase PtSe₂ is much less studied and this is especially true for its defects behaviors and their influence on electronic properties. In this article, we systemically explore the structure, stability, and kinetics of both Pt and Se vacancies in monolayer PtSe₂ using first-principles calculations. By examining the relative energies of these vacancies, we identify the most stable Se/Pt single and double vacancies. In particular, we reveal a new type of Se double vacancy structure with the lowest energy. Energetically, both Se and Pt single vacancies prefer to combine to form double vacancies. All Se and Pt vacancies have remarkable influence on the electronic properties. Moreover, Pt single and double vacancies can introduce strong spin polarization in PtSe₂, which may be promising for spintronic applications. These findings not only enrich the fundamental understanding of 1T-phase PtSe₂ but also provide useful guidance to design PtSe₂ for its optoelectronic and spintronic applications.

Direct Evidence of Dirac Signature in Bilayer Germanene Islands on Cu(111)

Bernal-stacked bilayer germanene with a stable buckled honeycomb structure has been successfully synthesized on Cu(111). Structural and electronic characterizations as well as theoretical calculations unequivocally demonstrate for the first time the presence of a nearly linear energy dispersion in the vicinity of the Fermi energy, as expected of the Dirac signature for theoretical freestanding germanene.

The electronic properties of the stanene/MoS2 heterostructure under strain

The effect of a MoS₂ substrate on the structural and electronic properties of stanene were systematically investigated by first-principles calculations.

Defective Hexagonal Boron Nitride Nanosheet on Ni(111) and Cu(111): Stability, Electronic Structures, and Potential Applications

Defective hexagonal boron nitride nanosheets (h-BNNSs) supported by Ni(111) and Cu(111) surfaces have been systematically studied in this work by first-principles methods. The calculation results show that various defects play an important role in enhancing the stability of h-BNNS/metal heterostructure. Importantly, significant electron transfer through the interface between metal substrate and h-BNNS to the defect sites can make h-BNNS more catalytically active. Using the oxygen reduction reaction (ORR) as a probe, it is shown that the binding energies of O2*, OH*, OOH*, and O* on h-BNNS/Cu(111) with a boron vacancy (VB) are quite similar to those observed on the Pt(111) surface, suggesting inert h-BNNS materials with defects can be functionalized by metal surfaces to become catalytically active for the ORR process. On the other hand, the reaction mechanism of CO oxidation on Ni(111) and Cu(111) supported h-BNNS with VB is systematically investigated. The h-BN/Cu(111) catalyst with a VB precovered by a CO species exhibits catalytic capacity for CO oxidation with a lower energy barrier compared with that on h-BN/Cu(111) without any defect. While on Ni(111) supported h-BNNS with a N vacancy, the defect site turns to be dominated by O2 and the energy barrier is significantly increased, indicating its dependence on the type of defect. This work will provide information for designing h-BN-based catalysts in heterogeneous catalysis.

Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(1 1 1)

In this work, a structural analysis of Ge layers deposited by molecular beam epitaxy (MBE) on Ag(1 1 1) surfaces with and without an AlN buffer layer have been investigated by x-ray Absorption Spectroscopy (XAS) at the Ge-K edge. For the Ge layers deposited on h-AlN buffer layer on Ag(1 1 1) an interatomic Ge-Ge distance [Formula: see text] Å is found, typical of 2-Dimensional Ge layers and in agreement with the theoretical predictions for free standing low-buckled Germanene presented in literature. First principles calculations, performed in the density functional theory (DFT) framework, supported the experimental RHEED and XAS findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1) template.

Does the Dirac cone of germanene exist on metal substrates?

The contrast of the band structures of silicene and germanene on the metal substrates. The Dirac cone of germanene is identifiable.

Tailoring the germanene–substrate interactions by means of hydrogenation

The interactions between the Ge atoms of a germanene layer and an Al(111) substrate are weakened by hydrogenation.

Recent Advances in Two-Dimensional Materials beyond Graphene

The isolation of graphene in 2004 from graphite was a defining moment for the "birth" of a field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials "beyond graphene". We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.

Multiple Dirac Points and Hydrogenation-Induced Magnetism of Germanene Layer on Al (111) Surface

A continuous germanene layer grown on the Al (111) surface has recently been achieved in experiment. In this work, we investigate its structural, electronic, and hydrogenation-induced properties through first-principles calculations. We find that despite having a different lattice structure from its free-standing form, germanene on Al (111) still possesses Dirac points at high-symmetry K and K' points. More importantly, there exist another three pairs of Dirac points on the K(K')-M high-symmetry lines, which have highly anisotropic dispersions due to the reduced symmetry. These massless Dirac Fermions become massive when spin-orbit coupling is included. Hydrogenation of the germanene layer strongly affects its structural and electronic properties. Particularly, when not fully hydrogenated, ferromagnetism can be induced due to unpaired local orbitals from the unsaturated Ge atoms. Remarkably, we discover that the one-side semihydrogenated germanene turns out to be a two-dimensional half-semimetal, representing a novel state of matter that is simultaneously a half-metal and a semimetal.

Continuous germanene layer on Al(111)

Germanene, a 2D honeycomb structure similar to silicene, has been fabricated on Al(111). The 2D germanene layer covers uniformly the substrate with a large coherence over the Al(111) surface atomic plane. It is characterized by a (3 × 3) superstructure with respect to the substrate lattice, shown by low energy electron diffraction and scanning tunnelling microscopy. First-principles calculations indicate that the Ge atoms accommodate in a very regular atomic configuration with a buckled conformation.

The rare two-dimensional materials with Dirac cones

Inspired by the great development of graphene, more and more research has been conducted to seek new two-dimensional (2D) materials with Dirac cones. Although 2D Dirac materials possess many novel properties and physics, they are rare compared with the numerous 2D materials. To provide explanation for the rarity of 2D Dirac materials as well as clues in searching for new Dirac systems, here we review the recent theoretical aspects of various 2D Dirac materials, including graphene, silicene, germanene, graphynes, several boron and carbon sheets, transition-metal oxides (VO2)n/(TiO2)m and (CrO2)n/(TiO2)m, organic and organometallic crystals, so-MoS2, and artificial lattices (electron gases and ultracold atoms). Their structural and electronic properties are summarized. We also investigate how Dirac points emerge, move, and merge in these systems. The von Neumann–Wigner theorem is used to explain the scarcity of Dirac cones in 2D systems, which leads to rigorous requirements on the symmetry, parameters, Fermi level, and band overlap of materials to achieve Dirac cones. Connections between existence of Dirac cones and the structural features are also discussed.

Hydrogenation-induced large-gap quantum-spin-Hall insulator states in a germanium–tin dumbbell structure

The germanium–tin dumbbell structure, Sn₆Ge₄H₄ has large topological nontrivial band gaps.

Dumbbell stanane: a large-gap quantum spin hall insulator

Hydrogenating DB stanene improves its stability and spin–orbit coupling effect, leading to a stable large-gap quantum spin Hall insulator.

Molecular functionalization of silicene/Ag(111) by covalent bonds: a DFT study

Thanks to differential functional theory calculations, we show that a benzene molecule can be chemisorbed in the butterfly configuration on the (3 × 3) silicene/(4 × 4) Ag(111) surface by means of two Si–C covalent bonds.

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

Lattice match and lattice mismatch models of graphene on hexagonal boron nitride from first principles

The interface between graphene and hexagonal boron nitride (h-BN) substrate plays an important role in device applications. Previously, theoretical studies have suggested that a small gap is opened at Dirac cones of graphene, but there is no detectable band gap in experiments. To explain the experimental result, we used two models from the views of lattice match and lattice mismatch between graphene and h-BN by first-principles calculations. We first studied the landscapes of the sliding energy surface (SES) and band gap of graphene on h-BN substrate within a lattice match approximation, which mimics continuously variable stacking sequences in a long-period graphene/BN Moiré superstructure arising from minor lattice mismatch. The plausibility of the long-period Moiré superstructure was evidenced by the smooth SES. The main features of the SES landscape can be captured by means of a simple registry index method. For most stacking patterns, the interactions between graphene and h-BN substrate open a band gap at the Dirac cones of graphene. However, there are special stacking modes in the landscape that preserve the Dirac cones of graphene. To further simulate the long-period graphene/BN Moiré superstructure observed in experiments, we also employed a rotation model within the lattice mismatch approximation. At the equilibrium interlayer spacing, the Dirac cones of graphene are preserved in all the rotational graphene/BN superstructures. The zero-band-gap feature is independent of the translation and rotation of graphene with respect to the h-BN substrate, which clearly agrees with the results of zero band gap in experiments.

Electron spin-polarization and spin lattices in the boron- and nitrogen-doped organic framework COF-5

Kagome spin lattice and half-metallicity can be achieved in a COF-5 framework by substitutional doping with nitrogen and boron atoms.

Intrinsic carrier mobility of germanene is larger than graphene's: first-principle calculations

Shown here is the intrinsic carrier mobility (ICM) of germanene, a group-IV graphene-like two-dimensional buckled nanosheet.