Revealing anisotropic strain in exfoliated graphene by polarized Raman spectroscopy

Dynamic modulation of the Fermi energy in suspended graphene backgated devices

Freestanding (suspended) graphene films, with high electron mobility (up to ~200,000 cm²V^-1s^-1), good mechanical and electronic properties, could resolve many of the current issues that are hampering the upscaling of graphene technology. Thus far, attempts at reliably fabricating suspended graphene devices comprising metal contacts, have often been hampered by difficulties in exceeding sizes of 1 µm in diameter, if using UV lithography. In this work, area of suspended graphene large enough to be utilized in microelectronic devices, have been obtained by suspending a CVD graphene film over cavities, with top contacts defined through UV lithography with both wet and dry etching. An area of up to 160 µm² can be fabricated as backgated devices. The suspended areas exhibit rippling of the surfaces which simultaneously introduces both tensile and compressive strain on the graphene film. Finally, the variations of the Fermi level in the suspended graphene areas can be modulated by applying a potential difference between the top contacts and the backgate. Having achieved large area suspended graphene, in a manner compatible with CMOS fabrication processes, together with enabling the modulation of the Fermi level, are substantial steps forward in demonstrating the potential of suspended graphene-based electronic devices and sensors.

Anisotropic Strain Relaxation of Graphene by Corrugation on Copper Crystal Surfaces

Corrugation is a ubiquitous phenomenon for graphene grown on metal substrates by chemical vapor deposition, which greatly affects the electrical, mechanical, and chemical properties. Recent years have witnessed great progress in controlled growth of large graphene single crystals; however, the issue of surface roughness is far from being addressed. Here, the corrugation at the interface of copper (Cu) and graphene, including Cu step bunches (CuSB) and graphene wrinkles, are investigated and ascribed to the anisotropic strain relaxation. It is found that the corrugation is strongly dependent on Cu crystallographic orientations, specifically, the packed density and anisotropic atomic configuration. Dense Cu step bunches are prone to form on loose packed faces due to the instability of surface dynamics. On an anisotropic Cu crystal surface, Cu step bunches and graphene wrinkles are formed in two perpendicular directions to release the anisotropic interfacial stress, as revealed by morphology imaging and vibrational analysis. Cu(111) is a suitable crystal face for growth of ultraflat graphene with roughness as low as 0.20 nm. It is believed the findings will contribute to clarifying the interplay between graphene and Cu crystal faces, and reducing surface roughness of graphene by engineering the crystallographic orientation of Cu substrates.

Sensitive Raman Probe of Electronic Interactions between Monolayer Graphene and Substrate under Electrochemical Potential Control

In situ electrochemical Raman spectroscopic measurements of defect-free monolayer graphene on various substrates were performed under electrochemical potential control. The G and 2D Raman band wavenumbers (ω_G, ω_2D) of graphene were found to depend upon the electrochemical potential, i.e., the charge density of graphene. The values of ω_G and ω_2D also varied depending on the choice of substrates. On metal substrates where graphene was synthesized by chemical vapor deposition, a strong blue shift of ω_2D was induced, which could not account for the strain and charge doping. We attributed the blue shift of ω_2D to a change in the electronic properties of graphene induced by distinct electronic interactions with the metal substrates. To explain the unique characteristics in the Raman spectrum of graphene on various substrates, a novel mechanism is proposed considering reduction of the Fermi velocity in graphene owing to dielectric screening from the metal substrates.

Electrostatic Deposition of Large-Surface Graphene

This work describes a method for electrostatic deposition of graphene over a large area using controlled electrostatic exfoliation from a Highly Ordered Pyrolytic Graphite (HOPG) block. Deposition over 130 × 130 µm² with 96% coverage is achieved, which contrasts with sporadic micro-scale depositions of graphene with little control from previous works on electrostatic deposition. The deposition results are studied by Raman micro-spectroscopy and hyperspectral analysis using large fields of view to allow for the characterization of the whole deposition area. Results confirm that laser pre-patterning of the HOPG block prior to cleaving generates anchor points favoring a more homogeneous and defect-free HOPG surface, yielding larger and more uniform graphene depositions. We also demonstrate that a second patterning of the HOPG block just before exfoliation can yield features with precisely controlled geometries.

Graphene nanoribbons under mechanical strain

Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.

Probing substrate influence on graphene by analyzing Raman lineshapes

We provide a new approach to identify the substrate influence on graphene surface. Distinguishing the substrate influences or the doping effects of charged impurities on graphene can be realized by optically probing the graphene surfaces, included the suspended and supported graphene. In this work, the line scan of Raman spectroscopy was performed across the graphene surface on the ordered square hole. Then, the bandwidths of G-band and 2D-band were fitted into the Voigt profile, a convolution of Gaussian and Lorentzian profiles. The bandwidths of Lorentzian parts were kept as constant whether it is the suspended and supported graphene. For the Gaussian part, the suspended graphene exhibits much greater Gaussian bandwidths than those of the supported graphene. It reveals that the doping effect on supported graphene is stronger than that of suspended graphene. Compared with the previous studies, we also used the peak positions of G bands, and I2D/IG ratios to confirm that our method really works. For the suspended graphene, the peak positions of G band are downshifted with respect to supported graphene, and the I2D/IG ratios of suspended graphene are larger than those of supported graphene. With data fitting into Voigt profile, one can find out the information behind the lineshapes.