A self-heated silicon nanowire array: selective surface modification with catalytic nanoparticles by nanoscale Joule heating and its gas sensing applications

Nanowatt-Level Photoactivated Gas Sensor Based on Fully-Integrated Visible MicroLED and Plasmonic Nanomaterials

Photoactivated gas sensors that are fully integrated with micro light-emitting diodes (µLED) have shown great potential to substitute conventional micro/nano-electromechanical (M/NEMS) gas sensors owing to their low power consumption, high mechanical stability, and mass-producibility. Previous photoactivated gas sensors mostly have utilized ultra-violet (UV) light (250-400 nm) for activating high-bandgap metal oxides, although energy conversion efficiencies of gallium nitride (GaN) LEDs are maximized in the blue range (430-470 nm). This study presents a more advanced monolithic photoactivated gas sensor based on a nanowatt-level, ultra-low-power blue (λ_peak  = 435 nm) µLED platform (µLP). To promote the blue light absorbance of the sensing material, plasmonic silver (Ag) nanoparticles (NPs) are uniformly coated on porous indium oxide (In₂ O₃ ) thin films. By the plasmonic effect, Ag NPs absorb the blue light and spontaneously transfer excited hot electrons to the surface of In₂ O₃ . Consequently, high external quantum efficiency (EQE, ≈17.3%) and sensor response (ΔR/R₀ (%) = 1319%) to 1 ppm NO₂ gas can be achieved with a small power consumption of 63 nW. Therefore, it is highly expected to realize various practical applications of mobile gas sensors such as personal environmental monitoring devices, smart factories, farms, and home appliances.

State-of-the-Art Research on Chemiresistive Gas Sensors in Korea: Emphasis on the Achievements of the Research Labs of Professors Hyoun Woo Kim and Sang Sub Kim

This review presents the results of cutting-edge research on chemiresistive gas sensors in Korea with a focus on the research activities of the laboratories of Professors Sang Sub Kim and Hyoun Woo Kim. The advances in the synthesis techniques and various strategies to enhance the gas-sensing performances of metal-oxide-, sulfide-, and polymer-based nanomaterials are described. In particular, the gas-sensing characteristics of different types of sensors reported in recent years, including core-shell, self-heated, irradiated, flexible, Si-based, glass, and metal-organic framework sensors, have been reviewed. The most crucial achievements include the optimization of shell thickness in core-shell gas sensors, decrease in applied voltage in self-heated gas sensors to less than 5 V, optimization of irradiation dose to achieve the highest response to gases, and the design of selective and highly flexible gas sensors-based WS2 nanosheets. The underlying sensing mechanisms are discussed in detail. In summary, this review provides an overview of the chemiresistive gas-sensing research activities led by the corresponding authors of this manuscript.

Recent advances in energy-saving chemiresistive gas sensors: A review

With the tremendous advances in technology, gas-sensing devices are being popularly used in many distinct areas, including indoor environments, industries, aviation, and detectors for various toxic domestic gases and vapors. Even though the most popular type of gas sensor, namely, resistive-based gas sensors, have many advantages over other types of gas sensors, their high working temperatures lead to high energy consumption, thereby limiting their practical applications, especially in mobile and portable devices. As possible ways to deal with the high-power consumption of resistance-based sensors, different strategies such as self-heating, MEMS technology, and room-temperature operation using especial morphologies, have been introduced in recent years. In this review, we discuss different types of energy-saving chemisresitive gas sensors including self-heated gas sensors, MEMS based gas sensors, room temperature operated flexible/wearable sensor and their application in the fields of environmental monitoring. At the end, the review will be concluded by providing a summary, challenges, recent trends, and future perspectives.

Chemo-Mechanically Operating Palladium-Polymer Nanograting Film for a Self-Powered H2 Gas Sensor

This study proposes a reliable and self-powered hydrogen (H₂) gas sensor composed of a chemo-mechanically operating nanostructured film and photovoltaic cell. Specifically, the nanostructured film has a configuration in which an asymmetrically coated palladium (Pd) film is coated on a periodic polyurethane acrylate (PUA) nanograting. The asymmetric Pd nanostructures, optimized by a finite element method simulation, swell upon reacting with H₂ and thereby bend the PUA nanograting, changing the amount of transmitted light and the current output of the photovoltaic cell. Since the degree of warping is determined by the concentration of H₂ gas, a wide concentration range of H₂ (0.1-4.0%) can be detected by measuring the self-generated electrical current of the photovoltaic cell without external power. The normalized output current changes are ∼1.5%, ∼2.8%, ∼3.5%, ∼5.0%, ∼21.5%, and 25.3% when the concentrations of H₂ gas are 0.1%, 0.5%, 1.0%, 1.6%, 2%, and 4%, respectively. Moreover, because Pd is highly chemically reactive to H₂ and also because there is no electrical current applied through Pd, the proposed sensor can avoid device failure due to the breakage of the Pd sensing material, resulting in high reliability, and can show high selectivity against various gases such as carbon monoxide, hydrogen sulfide, nitrogen dioxide, and water vapor. Finally, using only ambient visible light, the sensor was modularized to produce an alarm in the presence of H₂ gas, verifying a potential always-on H₂ gas monitoring application.

Nanoporous Silicon Thin Film-Based Hydrogen Sensor Using Metal-Assisted Chemical Etching with Annealed Palladium Nanoparticles

This article reports a nanoporous silicon (Si) thin-film-based high-performance and low-power hydrogen (H₂) sensor fabricated by metal-assisted chemical etching (MaCE). The nanoporous Si thin film treated with Pd-based MaCE showed improvement over a flat Si thin film sensor in H₂ response (ΔI/I₀ = 4.36% → 12.4% for 0.1% H₂). Furthermore, it was verified that the combination of thermal annealing of Pd and subsequent MaCE on the Si thin film synergistically enhances the H₂ sensitivity of the sensor by 65 times as compared to the flat Si thin film sensor (ΔI/I₀ = 4.36% → 285% for 0.1% H₂). This sensor also showed a very low operating power of 1.62 μW. After the thermal treatment, densely packed Pd nanoparticles agglomerate due to dewetting, which results in a higher surface-to-volume ratio by well-defined etched holes, leading to an increase in sensor response.

Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors

The high surface-to-volume ratio of nanostructured materials is the key factor for excellent performance when applied to chemical sensors. In order to achieve this by a facile and low-cost fabrication strategy, buffered oxide etchant (BOE) treatment of a silicon (Si)-based sensor was proposed. An n⁺-n^--n⁺ Si nanofilm structure was treated with a BOE, and palladium nanoparticles (PdNPs) were coated on the n-type Si channel surface via short-time electron beam evaporation to enable a highly sensitive and selective sensing of hydrogen (H₂) gas. The BOE treatment effect on lightly doped n-type Si was investigated, and the surface morphology of the etched Si was analyzed. Furthermore, the H₂ sensing characterization of PdNP-decorated Si devices with various BOE treatment times was systematically evaluated at room temperature. The results revealed that the surface of n-type Si is roughened by BOE treatment, which can further enhance the H₂-sensing performance of Pd-decorated Si. The elaborate study on the BOE-post-treated Si H₂ sensor showed that the performance enhancement was stable. The BOE treatment strategy was also applied to the nanopatterned Si sensors, which induced a clear performance enhancement for the H₂ sensing.

Light-enhanced room-temperature gas sensing performance of femtosecond-laser structured silicon after natural aging

Silicon has been studied as a room-temperature material for electrical-based gas sensing but the sensing performance after surface passivation or natural aging is unacceptable. In the present work, we report that for a gas sensor based on the femtosecond-laser structured silicon hyperdoped with sulfur, the gas sensing performance after long-term aging can be significantly enhanced by using a photovoltaic sensing mechanism. After sensor aging, the recorded response/recovery time is 478/2550 s in response to 50 ppm NH₃. In comparison, by using the new mechanism, the response/recovery time is much decreased and the shortest is recorded as 292/930 s. Moreover, the relative gas response could be increased by nearly 2 orders of magnitude. Even at a dryer environment where the gas adsorption/desorption process could take hours long, a much enhanced and rapid response is available in the same way. The enhanced sensing performance could be controlled by the bias voltage or by the light density. The results show that for the aged silicon surface, it can also be a potential gas sensing material through different working principles.

Joule-Heated and Suspended Silicon Nanowire Based Sensor for Low-Power and Stable Hydrogen Detection

We developed self-heated, suspended, and palladium-decorated silicon nanowires (Pd-SiNWs) for high-performance hydrogen (H₂) gas sensing with low power consumption and high stability against diverse environmental noises. To prepare the Pd-SiNWs, SiNWs were fabricated by conventional complementary metal-oxide-semiconductor (CMOS) processes, and Pd nanoparticles were coated on the SiNWs by a physical vapor deposition method. Suspended Pd-SiNWs were simply obtained by etching buried oxide layer and Pd deposition. Joule heating of Pd-SiNW (<1 mW) enables the detection of H₂ gas with a faster response and without the reduction of sensitivity unlike other Pd-based H₂ gas sensors. We proposed a H₂ sensing model using oxygen adsorption on the Pd nanoparticle-coated silicon oxide surface to understand the H₂ response of Joule-heated Pd-SiNWs. A suspended Pd-SiNW showed a similar transient sensing response with around four times lower Joule heating power (147 μW) than the substrate-bound Pd-SiNW (613 μW). The effect of interfering gas on the Pd-SiNW was investigated, and it was found that the Joule heating of Pd-SiNW helps to maintain the H₂ sensing performance in humid or carbon monoxide environments.

High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane

High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top-down fabrication process of flexible Pd/SiNM diode H₂ sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H₂ sensitivity (Δ I/ I₀ > 700-0.5% H₂ concentrations) and fast response time (τ_10-90 = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.

Palladium-Decorated Silicon Nanomesh Fabricated by Nanosphere Lithography for High Performance, Room Temperature Hydrogen Sensing

A hydrogen (H₂ ) gas sensor based on a silicon (Si) nanomesh structure decorated with palladium (Pd) nanoparticles is fabricated via polystyrene nanosphere lithography and top-down fabrication processes. The gas sensor shows dramatically improved H₂ gas sensitivity compared with an Si thin film sensor without nanopatterns. Furthermore, a buffered oxide etchant treatment of the Si nanomesh structure results in an additional performance improvement. The final sensor device shows fast H₂ response and high selectivity to H₂ gas among other gases. The sensing performance is stable and shows repeatable responses in both dry and high humidity ambient environments. The sensor also shows high stability without noticeable performance degradation after one month. This approach allows the facile fabrication of high performance H₂ sensors via a cost-effective, complementary metal-oxide-semiconductor (CMOS) compatible, and scalable nanopatterning method.

Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires

Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O₂ sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O₂, the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O₂.

Selective Deposition of Multiple Sensing Materials on Si Nanobelt Devices through Plasma-Enhanced Chemical Vapor Deposition and Device-Localized Joule Heating

This paper describes a novel method, using device-localized Joule heating (JH) in a plasma enhanced atomic layer deposition (PEALD) system, for the selective deposition of platinum (Pt) and zinc oxide (ZnO) in the n^- regions of n⁺/n^-/n⁺ polysilicon nanobelts (SNBs). COMSOL simulations were adopted to estimate device temperature distribution. However, during ALD process, the resistance of SNB device decreased gradually and reached to minima after 20 min JH. As a result, thermal decomposition of precursors occurred during PEALD process. Selective deposition in the n^- region was dominated by CVD instead of ALD. Selective deposition of Pt and ZnO films has been achieved and characterized using atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.

Localized Liquid-Phase Synthesis of Porous SnO2 Nanotubes on MEMS Platform for Low-Power, High Performance Gas Sensors

We have developed highly sensitive, low-power gas sensors through the novel integration method of porous SnO₂ nanotubes (NTs) on a micro-electro-mechanical-systems (MEMS) platform. As a template material, ZnO nanowires (NWs) were directly synthesized on beam-shaped, suspended microheaters through an in situ localized hydrothermal reaction induced by local thermal energy around the Joule-heated area. Also, the liquid-phase deposition process enabled the formation of a porous SnO₂ thin film on the surface of ZnO NWs and simultaneous etching of the ZnO core, eventually to generate porous SnO₂ NTs. Because of the localized synthesis of SnO₂ NTs on the suspended microheater, very low power for the gas sensor operation (<6 mW) has been realized. Moreover, the sensing performance (e.g., sensitivity and response time) of synthesized SnO₂ NTs was dramatically enhanced compared to that of ZnO NWs. In addition, the sensing performance was further improved by forming SnO₂-ZnO hybrid nanostructures due to the heterojunction effect.

Gate-controlled heat generation in ZnO nanowire FETs

Nanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent heating and sensing. However, all proof-of-concept devices proposed so far relied on the use of highly conductive nanomaterials, typically metals or highly doped semiconductors. In this article, we demonstrate a novel nanoheater architecture based on a single semiconductor nanowire field-effect transistor (NW-FET). Nominally undoped ZnO nanowires were incorporated into three-terminal devices whereby control of the nanowire temperature at a given source-drain bias was achieved by additional charge carriers capacitatively induced via the third gate electrode. Joule-heating selective ablation of poly(methyl methacrylate) deposited on ZnO nanowires was shown, demonstrating the ability of the proposed NW-FET configuration to enhance by more than one order of magnitude the temperature of a ZnO nanowire, compared to traditional two-terminal configurations. These findings demonstrate the potential of field-effect architectures to improve Joule heating power in nanowires, thus vastly expanding the range of suitable materials and applications for nanowire-based nanoheaters.

Novel Self-Heated Gas Sensors Using on-Chip Networked Nanowires with Ultralow Power Consumption

The length of single crystalline nanowires (NWs) offers a perfect pathway for electron transfer, while the small diameter of the NWs hampers thermal losses to tje environment, substrate, and metal electrodes. Therefore, Joule self-heating effect is nearly ideal for operating NW gas sensors at ultralow power consumption, without additional heaters. The realization of the self-heated NW sensors using the "pick and place" approach is complex, hardly reproducible, low yield, and not applicable for mass production. Here, we present the sensing capability of the self-heated networked SnO₂ NWs effectively prepared by on-chip growth. Our developed self-heated sensors exhibit a good response of 25.6 to 2.5 ppm NO₂ gas, while the response to 500 ppm H₂, 100 ppm NH₃, 100 ppm H₂S, and 500 ppm C₂H₅OH is very low, indicating the good selectivity of the sensors to NO₂ gas. Furthermore, the detection limit is very low, down to 82 parts-per-trillion. As-obtained sensing performance under self-heating mode is nearly identical to that under external heating mode. While the power consumption under self-heating mode is extremely low, around hundreds of microwatts, as scaled-down the size of the electrode is below 10 μm. The selectivity of the sensors can be controlled simply by tuning the loading power that enables simple detection of NO₂ in mixed gases. Remarkable performance together with a significantly facile fabrication process of the present sensors enhances the potential application of NW sensors in next generation technologies such as electronic noses, the Internet of Things, and smartphone sensing.

Hydrogen gas sensors from polysilicon nanobelt devices selectively modified with sensing materials

Double-junction n⁺/n^-/n⁺ polysilicon nanobelts featuring selectively deposited sensing materials have been investigated for application as H₂ gas sensors. The selective modification of the devices was performed through a combination of localized ablation of a resist and lift-off of a previous catalyst material deposited through e-beam evaporation. Four nanobelt devices, differentiated by their doping concentrations at the n^- region (from 2.5 × 10¹³ to 2.5 × 10¹⁴ cm^-2), were analyzed in terms of the responses to H₂ and their self-heating effects. A low doping concentration improved the response at room temperature, owing to a longer Debye length. The variation in the H₂-induced surface potential associated with temperature, accounting for degradation in the response of the nanobelts with Joule heating bias, was analyzed in terms of the I-V characteristics of the double-junction device. Among various catalysts (Pt, Pd, Pt/Pd) evaluated for their H₂ sensing characteristics, an ultrathin film of Pt/Pd was most favorable.

Temperature measurement of Joule heated silicon micro/nanowires using selectively decorated quantum dots

We developed a novel method to measure local temperature at micro/nano-scale regions using selective deposition of quantum dots (QDs) as a sensitive temperature probe and measured the temperature of Joule heated silicon microwires (SiMWs) and silicon nanowires (SiNWs) by this method. The QDs are selectively coated only on the surface of the SiMWs and SiNWs by a sequential process composed of selective opening of a polymethyl methacrylate layer via Joule heating, covalent bonding of QDs, and lift-off process. The temperatures of the Joule-heated SiMWs and SiNWs can be measured by characterizing the temperature-dependent shift of photoluminescence peak of the selectively deposited QDs even with far-field optics. The validity of the extracted temperature has been also confirmed by comparing with numerical simulation results. The proposed method can potentially provide micro/nanoscale measurement of localized temperatures for a wide range of electrical and optical devices.

Self-heated silicon nanowires for high performance hydrogen gas detection

Self-heated silicon nanowire sensors for high-performance, ultralow-power hydrogen detection have been developed. A top-down nanofabrication method based on well-established semiconductor manufacturing technology was utilized to fabricate silicon nanowires in wafer scale with high reproducibility and excellent compatibility with electronic readout circuits. Decoration of palladium nanoparticles onto the silicon nanowires enables sensitive and selective detection of hydrogen gas at room temperature. Self-heating of silicon nanowire sensors allows us to enhance response and recovery performances to hydrogen gas, and to reduce the influence of interfering gases such as water vapor and carbon monoxide. A short-pulsed heating during recovery was found to be effective for additional reduction of operation power as well as recovery characteristics. This self-heated silicon nanowire gas sensor will be suitable for ultralow-power applications such as mobile telecommunication devices and wireless sensing nodes.

Highly integrated synthesis of heterogeneous nanostructures on nanowire heater array

We have proposed a new method for the multiplexed synthesis of heterogeneous nanostructures using a top-down fabricated nanowire heater array. Hydrothermally synthesized nanostructures can be grown only on the heated nanowire through nanoscale temperature control using a Joule heated nanowire. We have demonstrated the selective synthesis of zinc oxide (ZnO) nanowires and copper oxide (CuO) nanostructures, as well as their surface modification with noble metal nanoparticles, using a nanowire heater array. Furthermore, we could fabricate an array of heterogeneous nanostructures via Joule heating of individual nanowire heaters and changing of the precursor solutions in a sequential manner. We have formed a parallel array of palladium (Pd) coated ZnO nanowires and gold (Au) coated ZnO nanowires, as well as a parallel array of ZnO nanowires and CuO nanospikes, in the microscale region by using the developed method.

Controlled amino-functionalization by electrochemical reduction of bromo and nitro azobenzene layers bound to Si(111) surfaces

4-Nitrobenzenediazonium (4-NBD) and 4-bromobenzenediazonium (4-BBD) salts were grafted electrochemically onto H-terminated, p-doped silicon (Si) surfaces. Atomic force microscopy (AFM) and ellipsometry experiments clearly showed layer thicknesses of 2-7 nm, which indicate multilayer formation. Decreasing the diazonium salt concentration and the reaction time resulted in a smaller layer thickness, but did not prevent the formation of multilayers. It was demonstrated, mainly by X-ray photoelectron spectroscopy (XPS), that the diazonium salts not only react with the H-terminated Si surface, but also with electrografted phenyl groups via azo-bond formation. These azo bonds can be electrochemically reduced at Ered = -1.5 V, leading to the corresponding amino groups. This reduction resulted in a modest decrease in layer thickness, and did not yield monolayers. This indicates that other coupling reactions, notably a biphenyl coupling, induced by electrochemically produced phenyl radicals, take place as well. In addition to the azo functionalities, the nitro functionalities in electrografted layers of 4-NBD were independently reduced to amino functionalities at a lower potential (Ered = -2.1 V). The presence of amino functionalities on fully reduced layers, both from 4-NBD- and 4-BBD-modified Si, was shown by the presence of fluorine after reaction with trifluoroacetic anhydride (TFAA). This study shows that the electrochemical reduction of azo bonds generates amino functionalities on layers produced by electrografting of aryldiazonium derivatives. In this way multifunctional layers can be formed by employing functional aryldiazonium salts, which is believed to be very practical in the fabrication of sensor platforms, including those made of multi-array silicon nanowires.

Silicon nanowire field-effect-transistor based biosensors: from sensitive to ultra-sensitive

Silicon nanowire field effect transistors (SiNW-FETs) have shown great promise as biosensors in highly sensitive, selective, real-time and label-free measurements. While applications of SiNW-FETs for detection of biological species have been described in several publications, less attention has been devoted to summarize the conjugating methods involved in linking organic bio-receptors with the inorganic transducer and the strategies of improving the sensitivity of devices. This article attempts to focus on summarizing the various organic immobilization approaches and discussing various sensitivity improving strategies, that include (I) reducing non-specific binding, (II) alignment of the probes, (III) enhancing signals by charge reporter, (IV) novel architecture structures, and (V) sensing in the sub-threshold regime.

Silicon nanowire-based devices for gas-phase sensing

Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed.