Rapid atomic layer deposition of silica nanolaminates: synergistic catalysis of Lewis/Brønsted acid sites and interfacial interactions

Low-k SiOx/AlOx Nanolaminate Dielectric on Dielectric Achieved by Hybrid Pulsed Chemical Vapor Deposition

Selective and smooth low-k SiOx/AlOx nanolaminate dielectric on dielectric (DOD) was achieved by a hybrid water-free pulsed CVD process consisting of 50 pulses of ATSB (tris(2-butoxy)aluminum) at 330 °C and a 60 s TBS (tris(tert-butoxy)silanol) exposure at 200 °C. Aniline selective passivation was demonstrated on W surfaces in preference to Si3N4 and SiO2 at 300 °C. At 200 °C, TBS pulsed CVD exhibited no growth on W or SiO2, but its growth was catalyzed by AlOx. Using a two-temperature pulsed CVD process, ∼2.7 nm selective SiOx/AlOx nanolaminate was deposited on Si3N4 in preference to aniline passivated W. Nanoselectivity was confirmed and demonstrated on nanoscale W/SiO2 patterned samples by TEM analysis. For a 1:1 Si:Al ratio, a dielectric constant (k) value of 3.3 was measured. For a 2:1 Si:Al ratio, a dielectric constant (k) value of 2.5 was measured. The k value well below that of Al2O3 and SiO2 is consistent with the formation of a low-density, low-k SiO2/Al2O3 nanolaminate in a purely thermal process. This is the first report of a further thermal CVD process for deposition of a low-k dielectric and the first report for a selective low-k process on the nanoscale.

Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water

As a unique nanofabrication technology, atomic layer deposition (ALD) has been widely used for the preparation of various materials in the fields of microelectronics, energy and catalysis. As a high-κ gate dielectric to replace SiO₂, zirconium oxide (ZrO₂) has been prepared through the ALD method for microelectronic devices. In this work, through density functional theory calculations, the possible reaction pathways of ZrO₂ ALD using tetrakis(dimethylamino)zirconium (TDMAZ) and water as the precursors were explored. The whole ZrO₂ ALD reaction could be divided into two sequential reactions, TDMAZ and H₂O reactions. In the TDMAZ reaction on the hydroxylated surface, the dimethylamino group of TDMAZ could be directly eliminated by substitution and ligand exchange reactions with the hydroxyl group on the surface to form dimethylamine (HN(CH₃)₂). In the H₂O reaction with the aminated surface, the reaction process is much more complex than the TDMAZ reaction. These reactions mainly include ligand exchange reactions between the dimethylamino group of TDMAZ and H₂O and coupling reactions for the formation of the bridged products and the by-product of H₂O or HN(CH₃)₂. These insights into surface reaction mechanism of ZrO₂ ALD can provide theoretical guidance for the precursor design and improving ALD preparation of other oxides and zirconium compounds, which are based ALD reaction mechanism.

Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide

Atomic layer deposition (ALD) is a nanopreparation technique for materials and is widely used in the fields of microelectronics, energy and catalysis. ALD methods for metal sulfides, such as Al2S3 and Li2S, have been developed for lithium-ion batteries and solid-state electrolytes. In this work, using density functional theory calculations, the possible reaction pathways of the ALD of Al2S3 using trimethylaluminum (TMA) and H2S were investigated at the M06-2X/6-311G(d, p) level. Al2S3 ALD can be divided into two consecutive and complementary half-reactions involving TMA and H2S, respectively. In the TMA half-reaction, the methyl group can be eliminated through the reaction with the sulfhydryl group on the surface. This process is a ligand exchange reaction between the methyl and sulfhydryl groups via a four-membered ring transition state. TMA half-reaction with the sulfhydrylated surface is more difficult than that with the hydroxylated surface. When the temperature increases, the reaction requires more energy, owing to the contribution of the entropy. In the H2S half-reaction, the methyl group on the surface can further react with the H2S precursor via a four-membered ring transition state. The orientation of H2S and more molecules have minimal effect on the H2S half-reaction. The reaction involving H2S through a six-membered ring transition state is unfavorable. In addition, the methyl and sulfhydryl groups on the surface can both react with the adjacent sulfhydryl group on the subsurface to form and release CH4 or H2S in the two half-reactions. Furthermore, sulfhydryl elimination occurs more easily than methyl elimination on the surface. These findings for the TMA and H2S half-reactions of Al2S3 ALD may be used for studying precursor chemistry and improvements in the preparation of other metal sulfides for emerging applications.

Design of efficient mono-aminosilane precursors for atomic layer deposition of SiO2 thin films

The suitability of six mono(alkylamino)silane precursors for growing SiO₂ films via ALD is assessed with DFT calculations.

Interfacial catalysis in and initial reaction mechanism of Al2O3 films fabricated by atomic layer deposition using non-hydrolytic sol-gel chemistry

Atomic layer deposition (ALD) is a powerful nanofabrication technique that can precisely control the composition, structure, and thickness of thin films at the atomic scale, and is widely used in the fields of electronic displays, microelectronics, catalysis, coatings, and energy storage and conversion. ALD of metal oxide thin films can be completed using metal alkoxides as the oxygen source, which is similar to the non-hydrolytic sol-gel (NHSG) technique. Density functional theory calculations show that metal alkoxides, such as Al(OⁱPr)₃ and Al(OEt)₃, can directly form M-O bonds through strong chemisorption on the surface. Meanwhile, alkyl groups can be eliminated through the formation of alkyl halides and alkenes, which can be catalyzed by interfacial interactions between alkyl groups and the surface. Such noncovalent catalysis resulting from interfacial interaction can be termed as interfacial catalysis. This can be characterized by the difference between the interfacial interaction energies of the transition state and the corresponding intermediate based on natural bond analysis. We expect that such interfacial catalysis can be used in precursor designs, improvement of ALD of oxides and as a new characterization method for other interfacial catalysis and noncovalent catalysis processes.

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2

In SiO₂ PE-ALD, aminosilanes can self-catalyze Si–O formation and ¹O₂, ¹O, and ³O can strongly oxidize surface –SiH to –SiOH.