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Huang J, Mu J, Cho Y, Winter C, Wang V, Zhang Z, Wang K, Kim C, Yadav A, Wong K, Nemani S, Yieh E, Kummel A. Low- k SiO x/AlO x Nanolaminate Dielectric on Dielectric Achieved by Hybrid Pulsed Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56556-56566. [PMID: 37978920 DOI: 10.1021/acsami.3c13973] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Selective and smooth low-k SiOx/AlOx nanolaminate dielectric on dielectric (DOD) was achieved by a hybrid water-free pulsed CVD process consisting of 50 pulses of ATSB (tris(2-butoxy)aluminum) at 330 °C and a 60 s TBS (tris(tert-butoxy)silanol) exposure at 200 °C. Aniline selective passivation was demonstrated on W surfaces in preference to Si3N4 and SiO2 at 300 °C. At 200 °C, TBS pulsed CVD exhibited no growth on W or SiO2, but its growth was catalyzed by AlOx. Using a two-temperature pulsed CVD process, ∼2.7 nm selective SiOx/AlOx nanolaminate was deposited on Si3N4 in preference to aniline passivated W. Nanoselectivity was confirmed and demonstrated on nanoscale W/SiO2 patterned samples by TEM analysis. For a 1:1 Si:Al ratio, a dielectric constant (k) value of 3.3 was measured. For a 2:1 Si:Al ratio, a dielectric constant (k) value of 2.5 was measured. The k value well below that of Al2O3 and SiO2 is consistent with the formation of a low-density, low-k SiO2/Al2O3 nanolaminate in a purely thermal process. This is the first report of a further thermal CVD process for deposition of a low-k dielectric and the first report for a selective low-k process on the nanoscale.
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Affiliation(s)
- James Huang
- Program in Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States
| | - Jing Mu
- Program in Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States
| | - Yunil Cho
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, United States
| | - Charles Winter
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
| | - Victor Wang
- Program in Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States
| | - Zichen Zhang
- Program in Materials Science and Engineering, University of California, San Diego, La Jolla, California 92093, United States
| | - Kesong Wang
- Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093, United States
| | - Chanyoung Kim
- Department of Nanoengineering, University of California, San Diego, La Jolla, California 92093, United States
| | - Ajay Yadav
- Applied Materials, Inc., Santa Clara, California 95054, United States
| | - Keith Wong
- Applied Materials, Inc., Santa Clara, California 95054, United States
| | - Srinivas Nemani
- Applied Materials, Inc., Santa Clara, California 95054, United States
| | - Ellie Yieh
- Applied Materials, Inc., Santa Clara, California 95054, United States
| | - Andrew Kummel
- Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, United States
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Xu R, Zhou Z, Li J, Zhang X, Zhu Y, Xiao H, Xu L, Ding Y, Li A, Fang G. Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water. Front Chem 2022; 10:1035902. [PMID: 36405315 PMCID: PMC9672480 DOI: 10.3389/fchem.2022.1035902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2022] [Accepted: 10/06/2022] [Indexed: 11/06/2022] Open
Abstract
As a unique nanofabrication technology, atomic layer deposition (ALD) has been widely used for the preparation of various materials in the fields of microelectronics, energy and catalysis. As a high-κ gate dielectric to replace SiO2, zirconium oxide (ZrO2) has been prepared through the ALD method for microelectronic devices. In this work, through density functional theory calculations, the possible reaction pathways of ZrO2 ALD using tetrakis(dimethylamino)zirconium (TDMAZ) and water as the precursors were explored. The whole ZrO2 ALD reaction could be divided into two sequential reactions, TDMAZ and H2O reactions. In the TDMAZ reaction on the hydroxylated surface, the dimethylamino group of TDMAZ could be directly eliminated by substitution and ligand exchange reactions with the hydroxyl group on the surface to form dimethylamine (HN(CH3)2). In the H2O reaction with the aminated surface, the reaction process is much more complex than the TDMAZ reaction. These reactions mainly include ligand exchange reactions between the dimethylamino group of TDMAZ and H2O and coupling reactions for the formation of the bridged products and the by-product of H2O or HN(CH3)2. These insights into surface reaction mechanism of ZrO2 ALD can provide theoretical guidance for the precursor design and improving ALD preparation of other oxides and zirconium compounds, which are based ALD reaction mechanism.
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Affiliation(s)
- Rui Xu
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
| | - Zhongchao Zhou
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
| | - Jing Li
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
| | - Xu Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
| | - Yuanyuan Zhu
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
| | - Hongping Xiao
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China,*Correspondence: Hongping Xiao, ; Lina Xu, ; Guoyong Fang,
| | - Lina Xu
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China,*Correspondence: Hongping Xiao, ; Lina Xu, ; Guoyong Fang,
| | - Yihong Ding
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
| | - Aidong Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China
| | - Guoyong Fang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China,*Correspondence: Hongping Xiao, ; Lina Xu, ; Guoyong Fang,
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le Roux WH, Matthews M, Lederer A, van Reenen AJ, Malgas-Enus R. First report of Schiff-base nickel nanoparticle-catalyzed oligomerization and polymerization of norbornene. J Catal 2022. [DOI: 10.1016/j.jcat.2021.11.008] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Yu Y, Zhou Z, Xu L, Ding Y, Fang G. Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide. Phys Chem Chem Phys 2021; 23:9594-9603. [PMID: 33885104 DOI: 10.1039/d1cp00864a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Atomic layer deposition (ALD) is a nanopreparation technique for materials and is widely used in the fields of microelectronics, energy and catalysis. ALD methods for metal sulfides, such as Al2S3 and Li2S, have been developed for lithium-ion batteries and solid-state electrolytes. In this work, using density functional theory calculations, the possible reaction pathways of the ALD of Al2S3 using trimethylaluminum (TMA) and H2S were investigated at the M06-2X/6-311G(d, p) level. Al2S3 ALD can be divided into two consecutive and complementary half-reactions involving TMA and H2S, respectively. In the TMA half-reaction, the methyl group can be eliminated through the reaction with the sulfhydryl group on the surface. This process is a ligand exchange reaction between the methyl and sulfhydryl groups via a four-membered ring transition state. TMA half-reaction with the sulfhydrylated surface is more difficult than that with the hydroxylated surface. When the temperature increases, the reaction requires more energy, owing to the contribution of the entropy. In the H2S half-reaction, the methyl group on the surface can further react with the H2S precursor via a four-membered ring transition state. The orientation of H2S and more molecules have minimal effect on the H2S half-reaction. The reaction involving H2S through a six-membered ring transition state is unfavorable. In addition, the methyl and sulfhydryl groups on the surface can both react with the adjacent sulfhydryl group on the subsurface to form and release CH4 or H2S in the two half-reactions. Furthermore, sulfhydryl elimination occurs more easily than methyl elimination on the surface. These findings for the TMA and H2S half-reactions of Al2S3 ALD may be used for studying precursor chemistry and improvements in the preparation of other metal sulfides for emerging applications.
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Affiliation(s)
- Yanghong Yu
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
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Huang L, Han B, Fan M, Cheng H. Design of efficient mono-aminosilane precursors for atomic layer deposition of SiO2 thin films. RSC Adv 2017. [DOI: 10.1039/c7ra02301d] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022] Open
Abstract
The suitability of six mono(alkylamino)silane precursors for growing SiO2 films via ALD is assessed with DFT calculations.
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Affiliation(s)
- Liang Huang
- The State Key Laboratory of Refractories and Metallurgy
- Wuhan University of Science and Technology
- Wuhan 430081
- China
- Sustainable Energy Laboratory
| | - Bo Han
- Sustainable Energy Laboratory
- Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- China
| | - Maohong Fan
- Department of Chemical and Petroleum Engineering
- University of Wyoming
- Laramie 82071
- USA
| | - Hansong Cheng
- Sustainable Energy Laboratory
- Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- China
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Xu L, Fang G, Cao Y, Li A. Interfacial catalysis in and initial reaction mechanism of Al 2O 3 films fabricated by atomic layer deposition using non-hydrolytic sol-gel chemistry. Phys Chem Chem Phys 2016; 18:31223-31229. [PMID: 27819089 DOI: 10.1039/c6cp05842f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
Atomic layer deposition (ALD) is a powerful nanofabrication technique that can precisely control the composition, structure, and thickness of thin films at the atomic scale, and is widely used in the fields of electronic displays, microelectronics, catalysis, coatings, and energy storage and conversion. ALD of metal oxide thin films can be completed using metal alkoxides as the oxygen source, which is similar to the non-hydrolytic sol-gel (NHSG) technique. Density functional theory calculations show that metal alkoxides, such as Al(OiPr)3 and Al(OEt)3, can directly form M-O bonds through strong chemisorption on the surface. Meanwhile, alkyl groups can be eliminated through the formation of alkyl halides and alkenes, which can be catalyzed by interfacial interactions between alkyl groups and the surface. Such noncovalent catalysis resulting from interfacial interaction can be termed as interfacial catalysis. This can be characterized by the difference between the interfacial interaction energies of the transition state and the corresponding intermediate based on natural bond analysis. We expect that such interfacial catalysis can be used in precursor designs, improvement of ALD of oxides and as a new characterization method for other interfacial catalysis and noncovalent catalysis processes.
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Affiliation(s)
- Lina Xu
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
| | - Guoyong Fang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China. and National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Yanqiang Cao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Aidong Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
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Fang G, Xu L, Cao Y, Li A. Theoretical design and computational screening of precursors for atomic layer deposition. Coord Chem Rev 2016. [DOI: 10.1016/j.ccr.2016.05.011] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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Fang GY, Xu LN, Wang LG, Cao YQ, Wu D, Li AD. Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst. NANOSCALE RESEARCH LETTERS 2015; 10:68. [PMID: 25897298 PMCID: PMC4398678 DOI: 10.1186/s11671-014-0714-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/12/2014] [Accepted: 12/23/2014] [Indexed: 06/04/2023]
Abstract
Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.
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Affiliation(s)
- Guo-Yong Fang
- />National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
- />Zhejiang Provincial Key Laboratory of Carbon Materials, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035 China
| | - Li-Na Xu
- />Zhejiang Provincial Key Laboratory of Carbon Materials, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035 China
| | - Lai-Guo Wang
- />National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
| | - Yan-Qiang Cao
- />National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
| | - Di Wu
- />National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
| | - Ai-Dong Li
- />National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
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Fang GY, Xu LN, Cao YQ, Wang LG, Wu D, Li AD. Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2. Chem Commun (Camb) 2015; 51:1341-4. [DOI: 10.1039/c4cc08004a] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
In SiO2 PE-ALD, aminosilanes can self-catalyze Si–O formation and 1O2, 1O, and 3O can strongly oxidize surface –SiH to –SiOH.
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Affiliation(s)
- Guo-Yong Fang
- National Laboratory of Solid State Microstructures
- College of Engineering and Applied Sciences
- Collaborative Innovation Center of Advanced Microstructures
- Nanjing University
- Nanjing 210093
| | - Li-Na Xu
- Zhejiang Provincial Key Laboratory of Carbon Materials
- College of Chemistry and Materials Engineering
- Wenzhou University
- Wenzhou 325035
- China
| | - Yan-Qiang Cao
- National Laboratory of Solid State Microstructures
- College of Engineering and Applied Sciences
- Collaborative Innovation Center of Advanced Microstructures
- Nanjing University
- Nanjing 210093
| | - Lai-Guo Wang
- National Laboratory of Solid State Microstructures
- College of Engineering and Applied Sciences
- Collaborative Innovation Center of Advanced Microstructures
- Nanjing University
- Nanjing 210093
| | - Di Wu
- National Laboratory of Solid State Microstructures
- College of Engineering and Applied Sciences
- Collaborative Innovation Center of Advanced Microstructures
- Nanjing University
- Nanjing 210093
| | - Ai-Dong Li
- National Laboratory of Solid State Microstructures
- College of Engineering and Applied Sciences
- Collaborative Innovation Center of Advanced Microstructures
- Nanjing University
- Nanjing 210093
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