Oxygen adsorption onto pure and doped Al surfaces--the role of surface dopants

Hydrogen at symmetric tilt grain boundaries in aluminum: segregation energies and structural features

Aluminum is envisioned to be an important material in future hydrogen-based energy systems. Here we report an ab initio investigation on the interactions between H-atoms and common grain boundaries (GBs) of fcc Al: Σ9, Σ5, Σ11 and Σ3. We found that upon segregation to the GBs, single H-atoms can cause displacement of Al-atoms. Increasing their concentration revealed large cooperative effects between H-atoms that favor the segregation when other H-atoms are bound at neighboring sites. This makes these GBs able to accommodate high concentrations of H-atoms with considerable segregation energies per atom. Structural analyses derived from Laguerre–Voronoi tessellations show that these GBs have many interstitial sites with higher symmetry than the bulk tetrahedral interstitial site. Many of those sites have also large volumes and higher coordination numbers than the bulk sites. These factors are the increased driving force for H-atom segregation at the studied GBs in Al when compared to other metals. These GBs can accommodate a higher concentration of H-atoms which indicates a likely uniform distribution of H-atoms at GBs in the real material. This suggests that attempting to mitigate hydrogen uptake solely by controlling the occurrence of certain GBs may not be the most efficient strategy for Al.

Gas-Phase Anionic Metal Clusters are Model Systems for Surface Oxidation: Kinetics of the Reactions of Mn- with O2 (M = V, Cr, Co, Ni; n = 1-15)

The reactions of anionic metal clusters M_n^- with O₂ (M = V (n = 1-15), Cr (n = 1-15), Co (n = 1-12), and Ni (n = 1-14)) are investigated from 300 to 600 K using a selected-ion flow tube. All rate constants show a positive temperature dependence, well described by an Arrhenius equation. Rate constants exceed (or are extrapolated to exceed at higher temperatures) the Langevin-Gioumousis-Stevenson capture rate constant. Application of a capture model accounting for the finite size of the clusters reproduces the size-dependent trends in reactivity. The assumption that reactivity is further controlled by an energetic barrier early in the reaction coordinate is consistent with the experimental observations. An observed correlation of the derived barrier heights on the electron binding energy of M_n^- suggests the barrier may be formed at an avoided crossing between electronic states correlating to M_n^- + O₂ and M_n + O₂^- reactants, analogous to that previously proposed for Al_n^- + O₂ systems. The mechanism is analogous to that for reactions of O₂ with neutral metal surfaces, indicating that gas-phase reactions of anionic metal clusters can be an appropriate model systems for surface oxidation.

The first stages of oxide growth at the low index Al surfaces (100), (110), (111): clusters and stripes vs. homogeneous growth

We performed a density functional theory (DFT) investigation of the mechanisms of oxide growth at Al(100), Al(110) and Al(111) up to 1 monolayer (ML) coverage of O-atoms with 0.125 ML increments. We found that the surface binding site preferences of O-atoms are largely affected by the presence of neighboring O-atoms. Based on this we constructed two oxide growth models: the formation of clusters that evolve to stripes with increasing coverage and the formation of a more homogeneous distribution of O-atoms. While the former model is characterized by a lower symmetry of distribution of O-atoms at the surfaces, the latter corresponds to higher symmetries. We found that the prevalence of each oxide growth mode depends on the coverage of O-atoms and that this dependency is different for each surface. For Al(100) and Al(110), up to coverages of 1 ML the oxide grows preferably via the formation of clusters that evolve to stripes with increasing coverage, while for Al(111) the stripes and clusters are the preferred growth mode for coverages up to 0.375 ML, beyond which the homogeneous growth mode is energetically favored. The calculated Al-O pair distribution functions show that the formation of clusters and stripes leads to shorter Al-O bond lengths when compared to the homogeneous growth. The oxides formed at Al(100) and Al(110) have Al-O bond lengths and geometries typical of the shorter bonds of α-alumina while at Al(111) the bond lengths are typical of γ-alumina and β-alumina. These results suggest that for low coverages, the oxides formed at Al(100) and Al(110) are resemblant of defective α-alumina while the oxide formed at Al(111) is similar to less disordered γ-alumina and β-alumina. For Al(111), the small energy difference between the growth of clusters and stripes and homogeneous growth does not exclude the coexistence of both growth modes; this could lead to the formation of a defective or amorphous oxide.

Adsorption of Hydrogen Sulfide, Hydrosulfide and Sulfide at Cu(110) - Polarizability and Cooperativity Effects. First Stages of Formation of a Sulfide Layer

Understanding the surface site preference for single adsorbates, the interactions between adsorbates, how these interactions affect surface site specificity in adsorption and perturb the electronic states of surfaces is important for rationalizing the structure of interfaces and the growth of surface products. Herein, using density functional theory (DFT) calculations, we investigated the adsorption of H₂ S, HS and, S onto Cu(110). The surface site specificity observed for single adsorbates can be largely affected by the presence of other adsorbates, especially S that can affect the adsorption of other species even at distances of 13 Å. The large supercell employed with a surface periodicity of (6×6) allowed us to safely use the Helmholtz method for the determination of the dipole of the surface-adsorbate complex at low adsorbate coverages. We found that the surface perturbation induced by S can be explained by the charge transfer model, H₂ S leads to a perturbation of the surface that arises mostly from Pauli exclusion effects, whereas HS shows a mix of charge transfer and Pauli exclusion effects. These effects have a large contribution to the long range adsorbate-adsorbate interactions observed. Further support for the long range adsorbate-adsorbate interactions are the values of the adsorption energies of adsorbate pairs that are larger than the sum of the adsorption energies of the single adsorbates that constitute the pair. This happens even for large distances and thus goes beyond the H-bond contribution for the H-bond capable adsorbate pairs. Exploiting this knowledge we investigated two models for describing the first stages of growth of a layer of S-atoms at the surface: the formation of islands versus the formation of more homogeneous surface distributions of S-atoms. We found that for coverages lower than 0.5 ML the S-atoms prefer to cluster as islands that evolve to stripes along the [1 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mover><mml:mn>1</mml:mn><mml:mo>‾</mml:mo></mml:mover></mml:math> 0] direction with increasing coverage. At 0.5 ML a homogeneous distribution of S-atoms becomes more stable than the formation of stripes. For the coverage equivalent to 1 ML, the formation of two half-monolayers of S-atoms that disrupt the Cu-Cu bonds between the first and second layer is more favorable than the formation of 1 ML homogeneous coverage of S-atoms. Here the S-Cu bond distances and geometries are reminiscent of pyrite, covellite, and to some extent chalcocite. The small energy difference of ≈0.1 eV that exists between this structure and the formation of 1 ML suggests that in a real system at finite temperature both structures may coexist leading to a structure with even lower symmetry.