Carrier concentration dependent optical and electrical properties of Ga doped ZnO hexagonal nanocrystals

Degenerately doped metal oxide nanocrystals for infrared light harvesting: insight into their plasmonic properties and future perspectives

The tuneability of the localized surface plasmon resonance (LSPR) of degenerately doped metal oxide (MOX) nanocrystals (NCs) over a wide range of the infrared (IR) region by controlling NC size and doping content offers a unique opportunity to develop a future generation of optoelectronic and photonic devices like IR photodetectors and sensors. The central aim of this review article is to highlight the distinctive and remarkable plasmonic properties of degenerately or heavily doped MOX nanocrystals by reviewing the comprehensive literature reported so far. In particular, the literature of each MOX NC, i.e. ZnO, CdO, In2O3, and WO3 doped with different dopants, is discussed separately. In addition to discussion of the most commonly used colloidal synthesis approaches, the ultrafast dynamics of charge carriers in NCs and the extraction of LSPR-assisted hot-carriers are also discussed in detail. Finally, future prospective applications of MOX NCs in IR photodetectors and photovoltaic (PV) self-powered chemical sensors are also presented.

Colloidal Approaches to Zinc Oxide Nanocrystals

Zinc oxide is an extensively studied semiconductor with a wide band gap in the near-UV. Its many interesting properties have found use in optics, electronics, catalysis, sensing, as well as biomedicine and microbiology. In the nanoscale regime the functional properties of ZnO can be precisely tuned by manipulating its size, shape, chemical composition (doping), and surface states. In this review, we focus on the colloidal synthesis of ZnO nanocrystals (NCs) and provide a critical analysis of the synthetic methods currently available for preparing ZnO colloids. First, we outline key thermodynamic considerations for the nucleation and growth of colloidal nanoparticles, including an analysis of different reaction methodologies and of the role of dopant ions on nanoparticle formation. We then comprehensively review and discuss the literature on ZnO NC systems, including reactions in polar solvents that traditionally occur at low temperatures upon addition of a base, and high temperature reactions in organic, nonpolar solvents. A specific section is dedicated to doped NCs, highlighting both synthetic aspects and structure-property relationships. The versatility of these methods to achieve morphological and compositional control in ZnO is explicated. We then showcase some of the key applications of ZnO NCs, both as suspended colloids and as deposited coatings on supporting substrates. Finally, a critical analysis of the current state of the art for ZnO colloidal NCs is presented along with existing challenges and future directions for the field.

Identifying the Correlation between Structural Parameters and Anisotropic Magnetic Properties in IMnV Semiconductors: A Possible Room-Temperature Magnetism

Layer-structured materials are of central importance in a wide range of research fields owing to their unique properties originating from their two dimensionality and anisotropy. Herein, quasi-2D layer-structured IMnV (I: alkali metals and V: pnictogen elements) compounds are investigated, which are potential antiferromagnetic (AFM) semiconductors. Single crystals of IMnV compounds are successfully grown using the self-flux method and their electronic and magnetic properties are analyzed in correlation with structural parameters. Combined with theoretical calculations, the structural analysis indicates that the variation in the bonding angle between VMnV is responsible for the change in the orbital hybridization of Mn and V, predominantly affecting their anisotropic semiconducting properties. Anisotropy in the magnetic properties is also found, where AFM ordering is expected to occur in the in-plane direction, as supported by spin-structure calculations. Furthermore, a possible ferromagnetic (FM) transition is discussed in relation to the vacancy defects. This study provides a candidate material group for AFM and FM spintronics and a basis for exploring magnetic semiconductors in quasi-2D layer-structured systems.

Comparative Studies of Undoped/Al-Doped/In-Doped ZnO Transparent Conducting Oxide Thin Films in Optoelectronic Applications

In this paper, undoped, Al-, and In-doped zinc oxide thin films were deposited. Film growth was performed using the sol–gel technique. The method included (a) preparing homogeneous and stable solutions of zinc acetate 2-hydrate, (b) mixing them with aluminum nitrate and indium acetate in 2-methoxyethanol and 2-aminoethanol solutions with various concentrations, and (c) spin coating them onto transparent glass substrates. After thermal annealing, the films showed a high transparency (80–90%) and good stability. Using typical diagnostic tools, the structural, morphological, optical, and electrical film properties were investigated and linked to the dopant type, and concentrations in view of optoelectronics were investigated.

Switching-behavior improvement in HfO2/ZnO bilayer memory devices by tailoring of interfacial and microstructural characteristics

We investigated the effect of top contact interface and microstructural characteristics of the insulating layers on resistive switching behaviors by fabricating and characterizing the HfO₂/ZnO bilayer heterostructures. Different thickness of ZnO underlying layer and different deposition temperatures of the upper HfO₂layer were designed to analyze the intrinsic contribution of the crystalline microstructure of the insulating bilayer. Pt and Ti top electrodes were used to demonstrate the extrinsic contribution of the interface configuration. It was observed that all devices show bipolar RS characteristics. Unlike the device composed of Pt/HfO₂/ZnO/Pt that exhibit an abrupt switching, a gradually continuous switching in the reset process was identified in the device composed of Ti/HfO₂/ZnO/Pt. Interfacial charge migration process/characteristic plays a key role in the RS process as well as its conduction mechanism. The RS performance of the former is significantly better than that of the latter, including much lower reset voltage, two orders of magnitude larger OFF/ON ratio and HRS resistance. In addition, as compared to the intrinsic contribution arising from the microstructure of the HfO₂/ZnO bilayer to the RS performances and current transport mechanism, the extrinsic effect contributed from the electrode characteristics (and its interface) is dominant.

Tunable structural and optical properties of AgxCuyInS2 colloidal quantum dots

Herein is discussed tunable absorption and emission properties of AgxCuyInS2 quantum dots involving wurtzite to chalcopyrite phase transformation dependent on Ag+ dopant content.

Surface Plasmon Resonance from Gallium-Doped Zinc Oxide Nanoparticles and Their Electromagnetic Enhancement Contribution to Surface-Enhanced Raman Scattering

In recent years, semiconductor-based surface-enhanced Raman scattering (SERS) substrates have received considerable attention and led to a forefront in the SERS field. However, the lack of electromagnetic (EM) enhancement contributions highly precludes the development of semiconductive-substrate-based SERS. In this study, Ga-doped ZnO nanoparticles (NPs) were fabricated and employed as novel SERS substrates based on the EM enhancement contribution of surface plasmon resonance (SPR). The obtained Ga-doped ZnO NPs exhibited obvious SPR absorptions in the visible and near- and mid-infrared regions. SPR absorption can be readily tuned by changing the doping ratios of Ga³⁺ ions. The SERS spectra of Ga-doped ZnO/4-mercaptopyridine (MPy) were investigated at different excitation wavelengths of 488, 532, 633, and 785 nm. The spectral enhancement of Ga-doped ZnO substrates depended on the doping ratios, excitation wavelengths, and nearby SPR absorption. Ga-doped ZnO NPs with the highest free charge carrier density and the doping ratio of 5% showed the strongest SERS spectra. For the fixed doping ratio of 5%, the better is the match between excitation wavelengths and SPR absorption, the higher is the SERS spectral enhancement. This study showed the feasibility of EM contributions to SERS by using semiconductive substrates and can contribute to the development of the semiconductor-based EM mechanism.

Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films

This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

Ga-Doped ZnO Nanostructured Powder for Cool-Nanopigment in Environment Applications

Gallium (Ga) doped zinc oxide (ZnO) nanocrystals were successfully synthesized via a γ-radiation-assisted polymer-pyrolysis route. Ga doped ZnO samples with Ga and ZnO precursor salts with molar ratios of 0%, 3%, 5%, and 10% were produced. A γ-radiation dosage of 1.5 kGy was used for polymerization initiation during the sample preparation. The properties of the obtained nanocrystal samples were characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR), UV-visible absorption, NIR-VIS-UV diffused reflectance, and high-resolution transmission electron microscopy (HR-TEM) characterization techniques. XRD results revealed the formation of ZnO nanocrystals with wurtzite structure for both Ga-doped and undoped ZnO samples. Noticeable increasing in the line broadening of the XRD peaks as well as pronounced decreasing of crystallite size were observed with the increasing Ga ratio in the samples. Optical peaks around Ga:ZnO samples showed a blueshift in the optical absorption peaks with increasing Ga content. These results are in good agreement with the dependency of crystallites size as well as grain size on Ga ratio obtained from XRD and TEM images, which make them fit well for the powder cool-pigment applications. The doped samples showed high values of NIR reflectance (RNIR*) with percentage varied from 84.25% to 89.05% that enabled them to qualify for cool-nanopigment applications. Furthermore, such doped samples registered low values of visible reflectance (RVIS*) that enabled to reduce the glare from the reflected visible sunlight.

Probing structural and photophysical features of Eu3+ activated NaCdPO4 orthophosphate phosphor

A series of Eu³⁺ doped NaCd_1-xPO₄: x Eu³⁺ (0 ≤ x ≤ 0.1) phosphors were synthesized and a systematic investigation of structural, morphological, optical and photophysical properties were carried out. Structural characteristics were analyzed both qualitatively as well as quantitatively to establish the phase purity, supported by FTIR and Raman spectroscopy methods. The valance state of the dopant, as well as surface elemental compositions were investigated by XPS technique. The optical characteristics were analyzed by employing UV-Visible DRS, which shows that the host bandgap is getting broadened upon doping as a result of the Burstein-Moss (BM) effect. Eu³⁺ doped phosphor exhibits emissions rich in red (617 nm) under suitable excitations at 393 nm while the optimal doping concentration was found to be around x = 0.06. The effective non-radiative transfer of energy from host to activator is governed by the dominant dipole-dipole transitions. The hypersensitive transition line ⁵D₀ → ⁷F₂ is observed owing to the induced electric dipole (ED) transition of Eu³⁺ centered at 617 nm. Local site symmetry has been analyzed to ascertain the environment around Eu³⁺ and presence of any non-equivalent cation sites. The concentration quenching effect of phosphors was explained on the basis of Dexter's theory and charge compensation mechanism. The Commission Internationale de l'Eclairage (CIE 1931) chromaticity coordinates for the prepared phosphors were estimated and found to lie in the red region of color space. The photoluminescence decay time was measured for the most intense emission line ⁵D₀ → ⁷F₂ at 617 nm under 393 nm excitation and the results indicate that Eu³⁺ activated NaCdPO₄ can be a suitable red phosphor for white LED using UV-LED chip owing to it's near UV-excitation characteristics.

Permanent photodoping of plasmonic gallium-ZnO nanocrystals

Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.

Defect engineering, microstructural examination and improvement of ultrafast third harmonic generation in GaZnO nanostructures: a study of e-beam irradiation

Electron beam induced effects on defect engineering and structural, morphological and optical properties of Ga doped ZnO (GaZnO) nanostructures for improved ultrafast nonlinear optical properties are presented. A microstructural analysis was carried out based on the Scherrer, Williamson-Hall, and size-strain models. All three models reveal a peak broadening effect upon electron beam irradiation (EBI) and the crystallite size of the films shows a decrease of 30% compared to unirradiated nanostructures. The decrease in intensity, variation in the peak position and broadening of the Raman E2H mode confirm that the EBI treatment introduces disorder into the nanostructures. The interband gap emissions observed in photoluminescence spectra are primarily due to defect-related emissions originating from intrinsic defects such as Zni, Oi, VZn, VO, VZn+, VO+ and OZn. The O1s core-level spectra show that the peak related to oxygen vacancy defects is suppressed upon EBI. Surface morphology studies reveal that the nucleation barriers of GaZnO nanostructures are reduced upon irradiation treatment resulting in a coalescence mechanism. Third harmonic generation studies show that higher electron-beam doses lead to the occurrence of enhanced THG signals due to a drastic change in the occupation of localized defect levels. Thermally induced nonlinear optical studies depict an improved χ(3) of 1.71 × 10-3 esu upon irradiation due to enhanced FCA induced TPA mechanism and non-radiative transitions which indicates the credibility of the grown films in photonic devices.

Enhancement of adjustable localized surface plasmon resonance in ZnO nanocrystals via a dual doping approach

Recently, the localized surface plasmon resonance (LSPR) concept was expanded from noble metals to doped semiconductor nanocrystals (NCs). However, the strengthening of the intrinsically very weak LSPR in NCs remains a great challenge for its applications in optics, electronics and optoelectronics fields. In this work, we report on the remarkable strengthening and controllability of LSPR in ZnO through a dual-doping strategy. First, high quality In-doped ZnO (IZO) NCs with intense LSPR were synthesized by a simple single-pot method. Importantly, the LSPR can be tuned by simply adjusting the concentration of In dopant, as well as by UV light irradiation (photo-induced doping). The pattern of electricity of an IZO NC film matches the shift of LSPR independent of dopant concentration. The UV light irradiation clearly enhanced the electrical properties of the films (350Ω/sq) due to increase carrier density explained by LSPR and confirmed by X-ray photoelectron spectroscopy. The IZO NCs can be easily dispersed in various organic solvents and serve as inks for assembling uniform films via solution processes. These IZO NC ink is promising for application in next-generation solution-based field effect transistors and other optoelectronic devices.

Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m² and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

Shape Controlled Plasmonic Sn Doped CdO Colloidal Nanocrystals: A Synthetic Route to Maximize the Figure of Merit of Transparent Conducting Oxide

The synthesis of different anisotropic shaped (eight different shapes) Sn⁴⁺ doped CdO (Sn:CdO) colloidal nanocrystals (NCs) by precise tuning of precursor reactivity and proper choice of capping agent is reported. In all these systems, formation of Sn:CdO quantum dots (QDs) of 2-3 nm is identified at very early stage of reaction. The colloidally stable QDs act as a continuous source for the formation of primary nanoparticles that can be transformed selectively into specific type of nanoparticle morphology. The specific facet stabilization of fcc (face centered cubic)CdO is predicted by particular choice of ligand. Fine tuning of plasmonic absorbance band can be achieved by variation of Sn⁴⁺ doping concentration. Different anisotropic Sn:CdO NCs exhibit interesting shape dependent plasmonic absorbance features in NIR region. High quality crack free uniform dense thin film has been deposited on glass substrate to make high quality transparent conducting oxide (TCO) coatings. figure of merit of TCO can be maximized as high as 0.523 Ω^-1 with conductivity of 43 600 S cm^-1 and visible transmittance of ≈85% which is much higher than commercially available tin doped indium oxide and other transparent electrodes.

Colloidal metal oxide nanocrystals as charge transporting layers for solution-processed light-emitting diodes and solar cells

This review bridges the chemistry of colloidal oxide nanocrystals and their application as charge transporting interlayers in solution-processed optoelectronics.

Degenerately Doped Metal Oxide Nanocrystals as Plasmonic and Chemoresistive Gas Sensors

Highly doped wide band gap metal oxide nanocrystals have recently been proposed as building blocks for applications as transparent electrodes, electrochromics, plasmonics, and optoelectronics in general. Here we demonstrate the application of gallium-doped zinc oxide (GZO) nanocrystals as novel plasmonic and chemiresistive sensors for the detection of hazardous gases including hydrogen (H₂) and nitrogen dioxide (NO₂). GZO nanocrystals with a tunable surface plasmon resonance in the near-infrared are obtained using a colloidal heat-up synthesis. Thanks to the strong sensitivity of the plasmon resonances to chemical and electrical changes occurring at the surface of the nanocrystals, such optical features can be used to detect the presence of toxic gases. By monitoring the changes in the dopant-induced plasmon resonance in the near-infrared, we demonstrate that GZO thin films prepared depositing an assembly of highly doped GZO colloids are able to optically detect both oxidizing and reducing gases at mild (<100 °C) operating temperatures. Combined optical and electrical measurements show that trivalent dopants within ZnO nanocrystals enhance the gas sensing response compared to undoped ZnO. Moreover, improved sub-ppm of NO₂ gas sensitivity is achieved by activating the sensors response through combined purple-blue (λ = 430 nm) light irradiation and mild heating at 75 °C. In addition, these thin films based on degenerately doped semiconductors are highly transparent in the visible range, enabling the fabrication of "invisible" gas sensors. The use of highly doped semiconductive nanocrystals for both IR plasmonic and chemiresistive sensors represent a marked advancement toward the development of highly sensitive and selective devices.

Conjugated polyelectrolyte nano field emission adlayers

Here we report on a straightforward and rapid means of enhancing the field electron emission performance of nascent vertically aligned multi-walled carbon nanotubes by introducing a polar zwitterionic conjugated polyelectrolyte adlayer at the vacuum-emitter interface. We attribute the observed 66% decrease in turn-on electric field to the augmented emitter micro-morphology and shifted surface band structure. The composite emitters can be optically modulated by exploiting the absorption cross-section of the solution cast adlayer, which increases the local carrier concentration which broadens the effective electrostatic shape of the emitter during optical excitation. Assessment via scanning anode field emission microscopy reveals a 25% improvement in DC time stability, a significant reduction in long-term hysteresis shift, and a threefold increase in bandwidth during pulsed mode operation.

Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1−xMgxO system

Multiple plasmonic magnetic Ag@Ni core–shell metal nanocrystal decorated Zn_1−xMg_xO nanoheterostructures have been synthesized and enhanced photophysical properties were found.