Surface Plasmon Resonance from Gallium-Doped Zinc Oxide Nanoparticles and Their Electromagnetic Enhancement Contribution to Surface-Enhanced Raman Scattering

In recent years, semiconductor-based surface-enhanced Raman scattering (SERS) substrates have received considerable attention and led to a forefront in the SERS field. However, the lack of electromagnetic (EM) enhancement contributions highly precludes the development of semiconductive-substrate-based SERS. In this study, Ga-doped ZnO nanoparticles (NPs) were fabricated and employed as novel SERS substrates based on the EM enhancement contribution of surface plasmon resonance (SPR). The obtained Ga-doped ZnO NPs exhibited obvious SPR absorptions in the visible and near- and mid-infrared regions. SPR absorption can be readily tuned by changing the doping ratios of Ga³⁺ ions. The SERS spectra of Ga-doped ZnO/4-mercaptopyridine (MPy) were investigated at different excitation wavelengths of 488, 532, 633, and 785 nm. The spectral enhancement of Ga-doped ZnO substrates depended on the doping ratios, excitation wavelengths, and nearby SPR absorption. Ga-doped ZnO NPs with the highest free charge carrier density and the doping ratio of 5% showed the strongest SERS spectra. For the fixed doping ratio of 5%, the better is the match between excitation wavelengths and SPR absorption, the higher is the SERS spectral enhancement. This study showed the feasibility of EM contributions to SERS by using semiconductive substrates and can contribute to the development of the semiconductor-based EM mechanism.

ZnO:Ga-graded ITO electrodes to control interface between PCBM and ITO in planar perovskite solar cells

Ga-doped ZnO (GZO)-graded layer, facilitating electron extraction from electron transport layer, was integrated on the surface of transparent indium tin oxide (ITO) cathode by using graded sputtering technique to improve the performance of planar n-i-p perovskite solar cells (PSCs). The thickness of graded GZO layer was controlled to optimize GZO-indium tin oxide (ITO) combined electrode for planar n-i-p PSCs. At optimized graded thickness of 15 nm, the GZO-ITO combined electrode showed an optical transmittance of 95%, a resistivity of 2.3 × 10^-4 Ohm cm, a sheet resistance of 15.6 Ohm/square, and work function of 4.23 eV, which is well matched with the 4.0-eV lowest unoccupied molecular orbital of [6,6]-phenyl-C₆₁-butyric acid methyl ester. Owing to enhanced extraction of electron by the graded GZO, the n-i-p PSC with GZO-ITO combined electrode showed higher power conversion efficiency (PCE) of 9.67% than the PCE (5.25%) of PSC with only ITO electrode without GZO-graded layer. In addition, the GZO integrated-ITO electrode acts as transparent electrode and electron extraction layer simultaneously due to graded mixing of the GZO at the surface region of ITO electrode.

Investigation of the Charge-Transfer Between Ga-Doped ZnO Nanoparticles and Molecules Using Surface-Enhanced Raman Scattering: Doping Induced Band-Gap Shrinkage

Semiconductor nanomaterial is a kind of important enhancement substrate in surface-enhanced Raman scattering (SERS), and the charge-transfer (CT) process contributes dominantly when they are used as the enhancement substrate for SERS. Doping has significant effect on the CT process of semiconductor nanomaterials. Yet till now, none attempts have been made to explore how doping affects the CT process between the semiconductor and probe molecules. For the first time, this paper investigates the effect of gallium (Ga) doping on the CT process between ZnO nanoparticles and 4-mercaptobenzoic acid (4-MBA) monolayer. In this paper, a series of Ga-doped ZnO nanoparticles (NPs) with various ratio of Ga and Zn are synthesized and their SERS performances are studied. The study shows that the doped Ga can cause the band gap shrinkage of ZnO NPs and then affect the CT resonance process form the valence band (VB) of ZnO NPs to the LUMO of 4-MBA molecules. The band gap of Ga-doped ZnO NPs is gradually narrowed with the increasing doping concentration, and a minimum value (3.16 eV) is reached with the Ga and Zn ratio of 3.8%, resulting in the maximum degree of CT. This work investigates the effects of doping induced band gap shrinkage on CT using SERS and provides a new insight on improving the SERS performance of semiconductor NPs.

Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m² and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation

Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

Growth of Highly Conductive Ga-Doped ZnO Nanoneedles

The molecular beam epitaxy growth of highly degenerate Ga-doped ZnO (GaZnO) nanoneedles (NNs) based on the vapor-liquid-solid (VLS) growth mode using Ag nanoparticles (NPs) as the growth catalyst is demonstrated. It is shown that when the growth substrate temperature is sufficiently high, a portion of a Ag NP can be melted for serving as the catalyst to precipitate GaZnO on the residual Ag NP and form a GaZnO NN. Record-low turn-on and threshold electric fields in the field emission test of the grown GaZnO NNs are observed. Also, a record-high field enhancement factor in field emission is calibrated. Such superior field emission performances are attributed to a few factors, including (1) the low work function and high conductivity of the grown GaZnO NNs due to highly degenerate Ga doping, (2) the sharp-pointed geometry of the vertically aligned GaZnO NNs, (3) the Ag doping in VLS precipitation of GaZnO for further reducing NN resistivity, and (4) the residual small Ag NP at the NN tip for making the tip even sharper and tip conductivity even higher.