Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects

Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers or polymer matrix help in further improving the dielectric properties as compared to two-phase nanocomposites. Recent research has been focused on altering the dielectric properties of different materials while also maintaining their superior flexibility. Flexible polymer nanocomposites are the best candidates for application in various fields. However, certain challenges still present, which can be solved only by extensive research in this field.

Remarkable enhancement of mechanical and dielectric properties of flexible ethylene propylene diene monomer (EPDM)/ barium titanate (BaTiO3) dielectric elastomer by chemical modification of particles

Just 1 wt% SG-Si6490 can raise tensile strength of EPDM with untreated BaTiO₃ from 1.94 to 9.00 MPa. (A) EPDM control; (B) untreated BaTiO₃; (C) NDZ109 treated BaTiO₃; (D) KH570 treated BaTiO₃; (E) SG-Si6490 treated BaTiO₃.

Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates

Ferroelectric-gate thin-film transistors (FGTs) with a stacked oxide structure of ZnO/Bi_3.15Nd_0.85Ti₃O₁₂ (BNT)/LaNiO₃ (LNO) on Si substrates have been prepared and characterized.