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Zhang B, Zhang B, Sheng G, Gu C, Yu J, Zhang X. Modulating the density of silicon nanowire arrays for high-performance hydrovoltaic devices. NANOTECHNOLOGY 2024; 35:185401. [PMID: 38271720 DOI: 10.1088/1361-6528/ad22a9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Accepted: 01/25/2024] [Indexed: 01/27/2024]
Abstract
Hydrovoltaic devices (HDs) based on silicon nanowire (SiNW) arrays have received intensive attention due to their simple preparation, mature processing technology, and high output power. Investigating the impact of structure parameters of SiNWs on the performance of HDs can guide the optimization of the devices, but related research is still not sufficient. This work studies the effect of the SiNW density on the performance of HDs. SiNW arrays with different densities were prepared by controlling the react time of Si wafers in the seed solution (tseed) in metal-assisted chemical etching. Density of SiNW array gradually decreases with the increase oftseed. HDs were fabricated based on SiNW arrays with different densities. The research results indicate that the open-circuit voltage gradually decreases with increasingtseed, while the short-circuit current first increases and then decreases with increasingtseed. Overall, SiNW devices withtseedof 20 s and 60 s have the best output performance. The difference in output performance of HDs based on SiNWs with different densities is attributed to the difference in the gap sizes between SiNWs, specific surface area of SiNWs, and the number of SiNWs in parallel. This work gives the corresponding relationship between the preparation conditions of SiNWs, array density, and output performance of hydrovoltaic devices. Density parameters of SiNW arrays with optimized output performance and corresponding preparation conditions are revealed. The relevant results have important reference value for understanding the mechanism of HDs and designing structural parameters of SiNWs for high-performance hydrovoltaic devices.
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Affiliation(s)
- Binbin Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, People's Republic of China
| | - Bingchang Zhang
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, Jiangsu, People's Republic of China
| | - Guangshang Sheng
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, Jiangsu, People's Republic of China
| | - Chenyang Gu
- School of Optoelectronic Science and Engineering, Key Laboratory of Advanced Optical Manufacturing Technologies of Jiangsu Province, Key Laboratory of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, Jiangsu, People's Republic of China
| | - Jia Yu
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, People's Republic of China
| | - Xiaohong Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, Jiangsu, People's Republic of China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215123, Jiangsu, People's Republic of China
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Raman S, A RS, M S. Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review. NANOTECHNOLOGY 2023; 34:182001. [PMID: 36640446 DOI: 10.1088/1361-6528/acb320] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 01/14/2023] [Indexed: 06/17/2023]
Abstract
Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.
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Affiliation(s)
- Srinivasan Raman
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Ravi Sankar A
- Centre for Innovation and Product Development (CIPD), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
| | - Sindhuja M
- School of Electronics Engineering (SENSE), Vellore Institute of Technology (VIT), Chennai Campus, Chennai, Tamil Nadu 600127, India
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Pang H, Yang G, Li P, Huang H, Ichihara F, Takei T, Ye J. Wafer-scale Si nanoconed arrays induced syngas in the photoelectrochemical CO2 reduction. Catal Today 2020. [DOI: 10.1016/j.cattod.2019.04.042] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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Peng Y, Xia C, Tan Z, An J, Zhang Q. Size-controlled excitonic effects on electronic and optical properties of Sb 2S 3 nanowires. Phys Chem Chem Phys 2019; 21:26515-26524. [PMID: 31777912 DOI: 10.1039/c9cp05134a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
In this work, the electronic and optical properties of one-dimensional (1D) Sb2S3 nanowires (NWs) with different sizes are investigated using first-principles calculations. The indirect-direct band transition of Sb2S3 NWs can be tuned effectively by the NW size and various uniaxial strains. In the Sb2S3 NWs, the quantum confinement effects result in wider bandgaps while the significantly enhanced electron-hole interaction that is expected to produce excitonic bound states generates a bandgap narrowing. The exciton binding energies for the Sb2S3 NWs are predicted by the effective masses of electrons and holes to lie in the range of 0-1 eV, which are larger than that of bulk Sb2S3, suggesting that excitons in Sb2S3 NWs may bind possible defects to promote luminescence. The size-controlled absorption edge blueshift and redshift of Sb2S3 NWs suggest that Sb2S3 NWs may be promising in the applications of nanoscale light emitting devices.
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Affiliation(s)
- Yuting Peng
- Department of Physics, University of Texas at Arlington, TX 76019, USA.
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Affiliation(s)
- Jiao Deng
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Yude Su
- Department of Chemistry, University of California, Berkeley, Berkeley, California 94720, United States
| | - Dong Liu
- School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 637459, Singapore
| | - Peidong Yang
- Department of Chemistry, University of California, Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute, Berkeley, California 94720, United States
| | - Bin Liu
- School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 637459, Singapore
| | - Chong Liu
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
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Zhang B, Jie J, Zhang X, Ou X, Zhang X. Large-Scale Fabrication of Silicon Nanowires for Solar Energy Applications. ACS APPLIED MATERIALS & INTERFACES 2017; 9:34527-34543. [PMID: 28921947 DOI: 10.1021/acsami.7b06620] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The development of silicon (Si) materials during past decades has boosted up the prosperity of the modern semiconductor industry. In comparison with the bulk-Si materials, Si nanowires (SiNWs) possess superior structural, optical, and electrical properties and have attracted increasing attention in solar energy applications. To achieve the practical applications of SiNWs, both large-scale synthesis of SiNWs at low cost and rational design of energy conversion devices with high efficiency are the prerequisite. This review focuses on the recent progresses in large-scale production of SiNWs, as well as the construction of high-efficiency SiNW-based solar energy conversion devices, including photovoltaic devices and photo-electrochemical cells. Finally, the outlook and challenges in this emerging field are presented.
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Affiliation(s)
- Bingchang Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Xuemei Ou
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
| | - Xiaohong Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, People's Republic of China
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