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Sun Y. Influence of shear strain on the electronic properties of monolayers MoS 2, WS 2, and MoS 2/WS 2 vdW heterostructure. J Mol Model 2024; 30:112. [PMID: 38538864 DOI: 10.1007/s00894-024-05913-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Accepted: 03/23/2024] [Indexed: 04/06/2024]
Abstract
CONTEXT This study investigates the dynamic stability of monolayers MoS2, WS2, and MoS2/WS2 van der Waals heterostructures (vdWHs) and the influence of shear strain on their electronic properties. The computational results of the binding energy and phonon dispersion demonstrate the excellent dynamic stability of MoS2/WS2 vdWHs. The MoS2/WS2 vdWH, with a type-II band alignment and an indirect bandgap, reduces electron-hole recombination, enhancing the efficiency and performance of optoelectronic devices. Under shear strain, the bandgap size and type of monolayers MoS2, WS2, and MoS2/WS2 vdWHs were effectively modulated, along with the interlayer charge redistribution in the MoS2/WS2 vdWHs. This work reveals the tunability of the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdWHs under shear strain, offering new possibilities and solutions for developing optoelectronic devices, sensors, and related fields. METHODS This work employed the CASTEP module within the Materials Studio software package for first-principles calculations. Ultrasoft pseudopotentials were employed during geometry optimizations to account for ion-electron interactions using the GGA-PBE functional for exchange-correlation potentials. The electronic configurations of the S, Mo, and W atoms were chosen as their typical arrangements: (3s2p4), (4s2p6d55s1), and (5s2p6d46s2), respectively. A vacuum layer of 20 Å was added to avoid interactions between the atomic layers. A cutoff energy of 500 eV was set for structural optimization and self-consistent calculations, with k-point grids of 6 × 6 × 1 and 9 × 9 × 1. During the structural optimization process, the energy convergence criterion was set to 1 × 10-5 eV, and the thresholds for interatomic forces and stresses were set to 0.01 eV/Å and 0.01 GPa, respectively. Grimmer's DFT-D2 correction accounted for the interlayer vdW interactions in the MoS2/WS2 vdWH, while the phonon dispersion was calculated using the linear response method.
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Affiliation(s)
- Yimin Sun
- Shenyang Institute of Engineering, Shenyang, 110136, China.
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2
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Hu K, Guan LM, Han D, Liu F, Xie SY. From Two-, One-, to Zero-Dimensional Vacancies: A Densification Pattern for a Typcial Transition-Metal Dichalcogenide of TiSe 2. J Phys Chem Lett 2021; 12:9422-9428. [PMID: 34553935 DOI: 10.1021/acs.jpclett.1c02308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In the areas of condensed matter physics, geoscience, material science, and inorganic chemistry, how the crystal structures evolve under an external field such as high-pressure is a fundamental question. By taking TiSe2 as the case, we investigate the phase transformations of the layered transition-metal dichalcogenides (TMDs) under high-pressure. The ambient 6-fold P-3m1 TiSe2 undergoes a transformation into the monoclinic 8-fold coordinated C2/m phase at 15 GPa and then into the hexagonal 9-fold Fe2P-type structure at 34 GPa. The above phase transitions can be unitedly described as the evolution of the vacancies: from a layered structure with two-dimensional (2D) vacancies to the structure with one-dimensional (1D) and zero-dimensional (0D) vacancies. The proposed densification model of TiSe2 reveals the processes how the symmetry breaking phase of spatial chemical bonding restores the symmetry under the isotropic external pressure.
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Affiliation(s)
- Kai Hu
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Li-Min Guan
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Dong Han
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
| | - Fuyang Liu
- Center for High Pressure Science and Technology Advanced Research, Beijing 100098, China
| | - Sheng-Yi Xie
- School of Physics and Electronics, Hunan University, Changsha 410082, China
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3
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Zhang L, Tang Y, Khan AR, Hasan MM, Wang P, Yan H, Yildirim T, Torres JF, Neupane GP, Zhang Y, Li Q, Lu Y. 2D Materials and Heterostructures at Extreme Pressure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002697. [PMID: 33344136 PMCID: PMC7740103 DOI: 10.1002/advs.202002697] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2020] [Revised: 09/03/2020] [Indexed: 06/02/2023]
Abstract
2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.
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Affiliation(s)
- Linglong Zhang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Yilin Tang
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Ahmed Raza Khan
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Md Mehedi Hasan
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Ping Wang
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Han Yan
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Tanju Yildirim
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Juan Felipe Torres
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Guru Prakash Neupane
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
| | - Yupeng Zhang
- Institute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Quan Li
- International Center for Computational Methods and SoftwareCollege of PhysicsJilin UniversityChangchun130012China
| | - Yuerui Lu
- Research School of Electrical, Energy and Materials EngineeringCollege of Engineering and Computer ScienceThe Australian National UniversityCanberraACT2601Australia
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Xiao Z, Hu J, Liu Y, Dong F, Huang Y. Co-segregation behavior of Sc and Zr solutes and their effect on the Al Σ5 (210) [110] symmetrical tilt grain boundary: a first-principles study. Phys Chem Chem Phys 2019; 21:19437-19446. [PMID: 31460522 DOI: 10.1039/c9cp03002f] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The research into the co-segregation behavior of Sc and Zr solutes and their effect on the mechanical properties of the Al Σ5 (210) [110] grain boundary was carried out by first principles calculations. It is concluded that Sc and Zr both have a powerful driving force to segregate to the grain boundary, and based on the most negative segregation energy, first one Sc atom segregates to the grain boundary, then one Zr atom and finally another Sc atom. The grain boundary energy, strengthening/embrittling energy, fracture energy and theoretical tensile peak stress all demonstrate that Sc and Zr solutes have a strengthening effect on the grain boundary, which can be attributed to the combination of the "chemical effect" (charge density variation) and the "structural effect" (atomic arrangement change), especially the migration of the first Sc-segregated site toward the grain boundary, which not only brings stronger Sc/Zr-Al bonds instead of weak Al-Al bonds but also leads to the shrinkage and charge accumulation of the great vacuum area between two grains. This work sheds light on the underlying mechanism of the better mechanical performance due to the co-addition of Sc and Zr solutes at the atomic and electronic levels.
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Affiliation(s)
- Zhengbing Xiao
- State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083, China. and Light Alloy Research Institute, Central South University, Changsha 410012, China
| | - Jiawei Hu
- Light Alloy Research Institute, Central South University, Changsha 410012, China
| | - Yu Liu
- Light Alloy Research Institute, Central South University, Changsha 410012, China
| | - Fang Dong
- State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083, China. and Light Alloy Research Institute, Central South University, Changsha 410012, China
| | - Yuanchun Huang
- State Key Laboratory of High Performance Complex Manufacturing, Central South University, Changsha 410083, China.
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5
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Yan P, Gao GY, Ding GQ, Qin D. Bilayer MSe2 (M = Zr, Hf) as promising two-dimensional thermoelectric materials: a first-principles study. RSC Adv 2019; 9:12394-12403. [PMID: 35515840 PMCID: PMC9063645 DOI: 10.1039/c9ra00586b] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2019] [Accepted: 04/07/2019] [Indexed: 01/08/2023] Open
Abstract
Motivated by experimental synthesis of two-dimensional MSe2 (M = Zr, Hf) thin films, we investigate the thermoelectric transport properties of MSe2 (M = Zr, Hf) bilayers by using first-principles calculations and Boltzmann transport theory.
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Affiliation(s)
- Peng Yan
- Physics Department
- Binzhou Medical University
- 264003 Yantai
- P. R. China
| | - Guo-ying Gao
- School of Physics
- Huazhong University of Science and Technology
- 430074 Wuhan
- P. R. China
| | - Guang-qian Ding
- School of Science
- Chongqing University of Posts and Telecommunications
- 400065 Chongqing
- P. R. China
| | - Dan Qin
- Physics Department
- Binzhou Medical University
- 264003 Yantai
- P. R. China
- School of Physics
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Bhattacharyya G, Choudhuri I, Bhauriyal P, Garg P, Pathak B. Ferromagnetism in magnesium chloride monolayer with an unusually large spin-up gap. NANOSCALE 2018; 10:22280-22292. [PMID: 30465686 DOI: 10.1039/c8nr07429a] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The primary research target of the rapidly evolving spintronic industry is to design highly efficient novel materials that consume very low power and operate with high speed. Main group based ferromagnetic half-metallic materials are very promising due to their long spin-relaxation time. In recent years, the discovery of superconducting state with high critical temperature in a magnesium based system (MgB2) invigorated researchers due to its simple crystal structure and intriguing results, leading to its use as a good material for large scale application in electronic devices. Here, we report ferromagnetism and strong half-metallicity in another Mg-based system, which can be a promising material for spintronics based devices rather than for electronic devices (such as MgB2). Based on the first principle calculations, we report here a series of magnetic half-metallic magnesium chloride based monolayers [Mg0.89δ0.11Cl2, Mg0.78δ0.22Cl2, and Mg0.67δ0.33Cl2 (MgCl3)]. This MgCl3 phase has a similar pattern as that in CrI3, which has drawn remarkable attention worldwide as the first intrinsic 2D magnet. These magnesium chloride monolayer based systems are 100% spin-polarized, and promising for scattering-less transport due to strong half-metallicity and large spin-up gap (∼6.135-6.431 eV). The unusually large spin-up gap in our proposed system may shield spin current leakage even in nanoscale device. Further investigation explores a ferromagnetic ordering in Mg0.89δ0.11Cl2 with a Curie temperature of 250 K, which makes the system viable for operation at temperatures slightly lower than the room temperature. High magnetic anisotropy energy (MAE) in Mg0.89δ0.11Cl2 (452.84 μeV) indicates that the energy required to flip the spin is high, and therefore inhibits spin fluctuation. These results suggest a promising way to discover MgCl2-based 2D spin valves, GMR, TMR and other spintronics devices.
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Affiliation(s)
- Gargee Bhattacharyya
- Discipline of Metallurgy Engineering and Materials Science, School of Basic Sciences, Indian Institute of Technology (IIT) Indore, Indore, Madhya Pradesh 453552, India.
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Zhai H, Qin Z, Sun D, Wang J, Liu C, Min N, Li Q. Pressure-induced phase transition, metallization and superconductivity in ZrS 2. Phys Chem Chem Phys 2018; 20:23656-23663. [PMID: 30191245 DOI: 10.1039/c8cp04271c] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Zirconium disulfide (ZrS2) is an exemplary case among layered materials that exhibit unusual electronic and vibrational properties, with applications in potential photovoltaic and single-layer transistor materials. Here, we examine the effect of pressure on the structural stability, phonon dispersion, electronic properties and electron-phonon coupling of ZrS2 using first-principles calculations. Our results unravel that ZrS2 undergoes several pressure-induced phase transformations from the ambient-pressure P3[combining macron]m1 structure to a monoclinic P21/m structure at 2.0 GPa, to an orthorhombic Immm structure at 5.6 GPa, and to a tetragonal I4/mmm structure at 25.0 GPa. The electronic band calculations indicate that the layered P3[combining macron]m1 and P21/m structures are narrow-gap semiconductors. The gaps of the above two phases, which are normal semiconductors, decrease with pressure. Our results show that ZrS2 reaches the metallic state by a P21/m → Immm phase transition and keeps its metallic state in the I4/mmm phase. A pressure-driven evolution of the topological Fermi surface has been uncovered. The electron-phonon coupling results identify superconducting states in both metallic Immm and I4/mmm structures. Our research shows that pressure is efficient in the modulation of the bonding states, crystal structures and electronic properties of ZrS2, which will stimulate further high-pressure structural and conductive measurements.
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Affiliation(s)
- Hang Zhai
- Key Laboratory of Automobile Materials of MOE, State Key Laboratory of Superhard Materials, and Department of Materials Science, Jilin University, Changchun 130012, China.
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8
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Shkvarin AS, Merentsov AI, Shkvarina EG, Yarmoshenko YM, Píš I, Nappini S, Titov AN. Electronic structure of ZrX 2 (X = Se, Te). J Chem Phys 2018; 148:124707. [PMID: 29604889 DOI: 10.1063/1.5019316] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The electronic structure of the ZrX2 (X = Se, Te) compounds has been studied using photoelectron, resonant photoelectron and X-ray absorption spectroscopy, theoretical calculations of the X-ray absorption spectra, and density of electronic states. It was found that the absorption spectra and valence band spectra are influenced by the chalcogen type. The results of the multiplet calculation of the Zr4+ atom show that the change in the splitting in the crystal field, which is described by the 10Dq parameter, is due to the change in the ratio of covalent and ionic contributions to the chemical bond. The resonance band near the Fermi level in the valence band spectra is observed for ZrTe2 in the Zr 3p-4d resonant excitation mode. The extent of photon energy indicates the charge localization on the Zr atom. Similar resonance band for ZrSe2 is absent; it indicates the presence of a gap at the Fermi level.
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Affiliation(s)
- A S Shkvarin
- M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg, Russia
| | - A I Merentsov
- Ural Federal University, 620089 Yekaterinburg, Russia
| | - E G Shkvarina
- M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg, Russia
| | - Yu M Yarmoshenko
- M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg, Russia
| | - I Píš
- Elettra-Sincrotrone Trieste S.C.p.A, S.S. 14, km 163.5, 34149 Basovizza, Trieste, Italy
| | - S Nappini
- IOM-CNR, Laboratorio TASC, S.S. 14, km 163.5, 34149 Basovizza, Trieste, Italy
| | - A N Titov
- M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg, Russia
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9
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García ÁM, Corro ED, Kalbac M, Frank O. Tuning the electronic properties of monolayer and bilayer transition metal dichalcogenide compounds under direct out-of-plane compression. Phys Chem Chem Phys 2017; 19:13333-13340. [PMID: 28492694 DOI: 10.1039/c7cp00012j] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
The band-gap modulation of atomically thin semiconductor transition metal dichalcogenides (MX2; M = Mo or W, X = S or Se) under direct out-of-plane compression is systematically studied by means of the density functional theory (DFT) formalism including spin-orbit coupling (SOC) and dispersion correction (D3). The out-of-plane compared with other regimes stress regime significantly reduces the pressure threshold at which the semimetal state is achieved (2.7-3.1 and 1.9-3.2 GPa for mono- and bilayer systems, respectively). Structural, electronic and bonding properties are investigated for a better understanding of the electronic transitions achieved with compression. A notable relationship with the formal ionic radius (M4+ and X2-) is obtained. On one hand, the monolayer systems with the smallest transition metal radius (Mo4+ < W4+) reach the semimetal state at lower stress, on the other hand, for bilayer specimens the transition to semimetal is observed earlier for compounds with the smallest chalcogenide radius (S2- < Se2-). Moreover, the appearance of non-covalent interaction (NCI) domains in the semimetal state confirms that the out-of-plane compression promotes the interaction between sulfur atoms in the single layered systems and reduces the interlayer space in bilayer configurations. Our predictions, supported by experimental evidences in the case of monolayered MoS2, demonstrate new alternative methods for tuning the electronic properties of transition metal dichalcogenides under direct out-of-plane compression.
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Affiliation(s)
- Ángel Morales García
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Hlavova 2030, 128 43 Prague 2, Czech Republic.
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10
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Swaroop R, Ahluwalia PK, Tankeshwar K, Kumar A. Ultra-narrow blue phosphorene nanoribbons for tunable optoelectronics. RSC Adv 2017. [DOI: 10.1039/c6ra26253h] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We report optoelectronic properties of ultra-narrow blue phosphorene nanoribbons (BPNRs) within the state-of-the-art density functional theory framework.
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Affiliation(s)
- Ram Swaroop
- Centre for Physical Sciences
- School of Basic and Applied Sciences
- Central University of Punjab
- Bathinda
- India
| | | | - K. Tankeshwar
- Department of Physics
- Guru Jambheshwar University of Science and Technology
- Hisar
- India
| | - Ashok Kumar
- Centre for Physical Sciences
- School of Basic and Applied Sciences
- Central University of Punjab
- Bathinda
- India
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Quhe R, Feng S, Lu J, Lei M. Electronic properties of layered phosphorus heterostructures. Phys Chem Chem Phys 2017; 19:1229-1235. [DOI: 10.1039/c6cp06583j] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
By using ab initio approaches, the electronic properties of vertical heterostructured compounds of different structural phases of layered phosphorus have been studied.
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Affiliation(s)
- Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science
- Beijing University of Posts and Telecommunications
- Beijing 100876
- P. R. China
| | - Shenyan Feng
- State Key Laboratory of Information Photonics and Optical Communications and School of Science
- Beijing University of Posts and Telecommunications
- Beijing 100876
- P. R. China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics
- Peking University
- Beijing 100871
- P. R. China
- Collaborative Innovation Center of Quantum Matter
| | - Ming Lei
- State Key Laboratory of Information Photonics and Optical Communications and School of Science
- Beijing University of Posts and Telecommunications
- Beijing 100876
- P. R. China
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12
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Bahuguna BP, Saini LK, Tiwari B, Sharma RO. Electric field induced insulator to metal transition in a buckled GaAs monolayer. RSC Adv 2016. [DOI: 10.1039/c6ra07415d] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We investigate the electronic properties of two-dimensional buckled honeycomb GaAs in the presence of an external electric field using first principles calculations.
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Affiliation(s)
| | - L. K. Saini
- Applied Physics Department
- Sardar Vallabhbhai National Institute of Technology
- Surat
- India-395007
| | - Brajesh Tiwari
- Applied Physics Department
- Sardar Vallabhbhai National Institute of Technology
- Surat
- India-395007
| | - R. O. Sharma
- Applied Physics Department
- Sardar Vallabhbhai National Institute of Technology
- Surat
- India-395007
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Sung HJ, Choe DH, Chang KJ. Tuning Dirac points by strain in MoX2nanoribbons (X = S, Se, Te) with a 1T′ structure. Phys Chem Chem Phys 2016; 18:16361-6. [DOI: 10.1039/c6cp02204a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report the tunability of the topological edge state by strain engineering in quasi-one-dimensional nanoribbons of 1T′-MoX2with X = (S, Se, Te) through first-principles calculations.
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Affiliation(s)
- Ha-Jun Sung
- Department of Physics
- Korea Advanced Institute of Science and Technology
- Daejeon 34141
- Republic of Korea
| | - Duk-Hyun Choe
- Department of Physics
- Korea Advanced Institute of Science and Technology
- Daejeon 34141
- Republic of Korea
| | - K. J. Chang
- Department of Physics
- Korea Advanced Institute of Science and Technology
- Daejeon 34141
- Republic of Korea
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Kaur S, Kumar A, Srivastava S, Tankeshwar K. Electronic structure engineering of various structural phases of phosphorene. Phys Chem Chem Phys 2016; 18:18312-22. [DOI: 10.1039/c6cp01252c] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report the tailoring of the electronic structures of various structural phases of phosphorene (α-P, β-P, γ-P and δ-P) based homo- and hetero-bilayers through in-plane mechanical strains, vertical pressure and transverse electric field by employing density functional theory.
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Affiliation(s)
- Sumandeep Kaur
- Department of Physics
- Panjab University
- Chandigarh 160014
- India
| | - Ashok Kumar
- Centre for Physical Sciences
- School of Basic and Applied Sciences
- Central University of Punjab
- Bathinda
- India
| | | | - K. Tankeshwar
- Department of Physics
- Guru Jambheshwar University of Science and Technology
- Hisar
- India
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