Control of layer stacking in CVD graphene under quasi-static condition

Layer-engineered large-area exfoliation of graphene

The competition between quality and productivity has been a major issue for large-scale applications of two-dimensional materials (2DMs). Until now, the top-down mechanical cleavage method has guaranteed pure perfect 2DMs, but it has been considered a poor option in terms of manufacturing. Here, we present a layer-engineered exfoliation technique for graphene that not only allows us to obtain large-size graphene, up to a millimeter size, but also allows selective thickness control. A thin metal film evaporated on graphite induces tensile stress such that spalling occurs, resulting in exfoliation of graphene, where the number of exfoliated layers is adjusted by using different metal films. Detailed spectroscopy and electron transport measurement analysis greatly support our proposed spalling mechanism and fine quality of exfoliated graphene. Our layer-engineered exfoliation technique can pave the way for the development of a manufacturing-scale process for graphene and other 2DMs in electronics and optoelectronics.

Controlled Island Formation of Large-Area Graphene Sheets by Atmospheric Chemical Vapor Deposition: Role of Natural Camphor

Camphor-based mono-/bilayer graphene (MLG) sheets have been synthesized by very facile atmospheric chemical vapor deposition processes on Si/SiO2, soda lime glass, and flexible polyethylene terephthalate films. The effect of camphor concentration with respect to distance between camphor and the Cu foil (D) has been varied to investigate the controlled formation of a homogeneous graphene sheet over a large area on Cu foil. Raman studies show a remarkable effect of camphor at a typical distance (D) to form a monolayer to multilayer graphene (MULG) sheet. The signature of MLG to MULG sheets appears due to increase in the number of nucleation sites, even over the subsequent domains that contribute stacks of graphene over each other as observed by high-resolution transmission electron microscopy images. Moreover, the increase in camphor concentration at a particular distance generates more defect states in graphene as denoted by D band at 1360 cm-1. Uniform distribution of large-area MLG demonstrates an intense 2D/G ratio of ∼2.3. Electrical and optical measurements show a sheet resistance of ∼1 kΩ/sq with a maximum transmittance of ∼88% at 550 nm for low camphor concentration. An improvement in the rectification and photodiode behavior is observed from the diodes fabricated on n-Si/MULG as compared to n-Si/MLG in dark and light conditions.

Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)₂ atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphene

Exposing graphene to a hydrogen post-etching process yields dendritic graphene shapes. Here, we demonstrate that similar dendritic structures can be achieved at long growth times without adding hydrogen externally. These shapes are not a result of a surface diffusion controlled growth but of the competing backward reaction (etching), which dominates the growth dynamics at long times due to an in situ rise in the hydrogen partial pressure. We have performed a systematic study on the growth of graphene as a function of time to identify the onset and gradual evolution of graphene shapes caused by etching and then demonstrated that the etching can be stopped by reducing the flow of hydrogen from the feed. In addition, we have found that the etching rate due to the in situ rise in hydrogen is strongly dependent on the confinement (geometrical confinement) of copper foil. Highly etched graphene with dendritic shapes was observed in unconfined copper foil regions while no etching was found in graphene grown in a confined reaction region. This highlights the effect of the dynamic reactant distribution in activating the in situ etching process during growth, which needs to be counteracted or controlled for large scale growth.

Growth to etching transformation following in situ rise in hydrogen with time results in dendritic graphene.

Probing Bilayer Grain Boundaries in Large-Area Graphene with Tip-Enhanced Raman Spectroscopy

The bilayer grain boundaries (GBs) in chemical-vapor-deposition-grown large-area graphene are identified using multispectral tip-enhanced Raman imaging with 18 nm spatial resolution. The misorientation angle of the bilayer GBs is determined from a quantitative analysis of the phonon-scattering properties associated with the modified electronic structure.