Transfer printing of CVD graphene FETs on patterned substrates

Minimizing Contact Resistance and Flicker Noise in Micro Graphene Hall Sensors Using Persistent Carbene Modified Gold Electrodes

Scalable micro graphene Hall sensors (μGHSs) hold tremendous potential for highly sensitive and label-free biomagnetic sensing in physiological solutions. To enhance the performance of these devices, it is crucial to optimize frequency-dependent flicker noise to reduce the limit of detection (LOD), but it remains a great challenge due to the large contact resistance at the graphene-metal contact. Here we present a surface modification strategy employing persistent carbene on gold electrodes to reduce the contact resistivity by a factor of 25, greatly diminishing μGHS flicker noise by a factor of 1000 to 3.13 × 10-14 V2/Hz while simultaneously lowering the magnetic LOD SB1/2 to 1440 nT/Hz1/2 at 1 kHz under a 100 μA bias current. To the best of our knowledge, this represents the lowest SB1/2 reported for scalable μGHSs fabricated through wafer-scale photolithography. The reduction in contact noise is attributed to the π-π stacking interaction between the graphene and the benzene rings of persistent carbene, as well as the decrease in the work function of gold as confirmed by Kelvin Probe Force Microscopy. By incorporating a microcoil into the μGHS, we have demonstrated the real-time detection of superparamagnetic nanoparticles (SNPs), achieving a remarkable LOD of ∼528 μg/L. This advancement holds great potential for the label-free detection of magnetic biomarkers, e.g., ferritin, for the early diagnosis of diseases associated with iron overload, such as hereditary hemochromatosis (HHC).

Transfer of 2D Films: From Imperfection to Perfection

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.

Poly(vinyl alcohol)-Assisted Exfoliation of van der Waals Materials

We report a highly efficient and easily transferable poly(vinyl alcohol) (PVA)-assisted exfoliation method, which allows one to obtain van der Waals materials on large scales, e.g., centimeter-scale graphite flakes and hundred-micrometer-scale several layers of ZnIn₂S₄ and BN. The present exfoliation scheme is nondestructive, and the materials prepared by PVA-assisted exfoliation can be directly fabricated into devices. This exfoliation approach could be helpful in overcoming the preparation bottleneck for large-scale applications of two-dimensional (2D) materials.

Independent Dual-Channel Approach to Mesoscopic Graphene Transistors

Graphene field-effect transistors (GFETs) exhibit unique switch and sensing features. In this article, GFETs are investigated within the tight-binding formalism, including quantum capacitance correction, where the graphene ribbons with reconstructed armchair edges are mapped into a set of independent dual channels through a unitary transformation. A new transfer matrix method is further developed to analyze the electron transport in each dual channel under a back gate voltage, while the electronic density of states of graphene ribbons with transversal dislocations are calculated using the retarded Green's function and a novel real-space renormalization method. The Landauer electrical conductance obtained from these transfer matrices was confirmed by the Kubo-Greenwood formula, and the numerical results for the limiting cases were verified on the basis of analytical results. Finally, the size- and gate-voltage-dependent source-drain currents in GFETs are calculated, whose results are compared with the experimental data.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Cera alba-assisted ultraclean graphene transfer for high-performance PbI2 UV photodetectors

Large polymer residues introduced by the graphene transfer process is still a major obstacle limiting the integration of chemical vapor deposition (CVD)-grown graphene into next-generation electronic and photoelectronic devices. Here we use cera alba, a natural and environmental-friendly material that derives from honeycomb, as the supporting layer for ultraclean graphene transfer. The transferred graphene has a low surface roughness with a surface height fluctuation within 5 nm and an only 80.08% average sheet resistance of the polymethyl methacrylate (PMMA)-transferred graphene. Further, the ultraclean graphene is used as electrodes for the PbI₂-based UV photodetector and enables a 135% improvement on responsivity. The cera alba assisted transfer method reported here could achieve clean and damage-free graphene transfer, promoting the application of CVD-grown two-dimensional (2D) materials in large-area thin-film electronic and optoelectronic devices.

Multiple Transfer of Layer-by-Layer Nanofunctional Films by Adhesion Controls

Transfer methods to displace active functional layers onto desired surfaces have been developed for the fabrication of nanostructured thin film devices. However, multiple transfers with highly polar surfaces were not yet fully demonstrated presumably due to difficulty in the control of the competitive adhesions at interfaces. In this study, we present adhesion-assisted multiple transfer methods for the fabrication of highly ordered nanolaminated structures with layer-by-layer (LbL) assembled films composed of various functional nanomaterials. The interfacial adhesions were controlled with adhesive layers having a thickness of only 2.5 nm for the successful transfer of the LbL nanofunctional films from the donor substrates to the receiver substrates, which was determined mainly by the major functional moieties at the contact surfaces. The root-mean-square roughness should be lower than 200 nm for conformal contact in the transfer. The versatility of the proposed method was demonstrated with various functional Au, silica, ZnO, and TiO₂ nanoparticles as constituent materials and various types of substrates including Si wafer, glass, and polyethylene terephthalate surfaces. The fabricated films with periodic depositions of two different materials could exhibit photoreflective properties with high-order reflection peaks, which were simply tunable by adjusting the order in the multiple transfer. This transfer method could effectively reduce the cost and time in the nanofabrication as it did not require costly equipment, harsh synthesis conditions, and hazardous solvents.

Fabrication of High-resolution Graphene-based Flexible Electronics via Polymer Casting

In this study, a novel method based on the transfer of graphene patterns from a rigid or flexible substrate onto a polymeric film surface via solvent casting was developed. The method involves the creation of predetermined graphene patterns on the substrate, casting a polymer solution, and directly transferring the graphene patterns from the substrate to the surface of the target polymer film via a peeling-off method. The feature sizes of the graphene patterns on the final film can vary from a few micrometers (as low as 5 µm) to few millimeters range. This process, applied at room temperature, eliminates the need for harsh post-processing techniques and enables creation of conductive graphene circuits (sheet resistance: ~0.2 kΩ/sq) with high stability (stable after 100 bending and 24 h washing cycles) on various polymeric flexible substrates. Moreover, this approach allows precise control of the substrate properties such as composition, biodegradability, 3D microstructure, pore size, porosity and mechanical properties using different film formation techniques. This approach can also be used to fabricate flexible biointerfaces to control stem cell behavior, such as differentiation and alignment. Overall, this promising approach provides a facile and low-cost method for the fabrication of flexible and stretchable electronic circuits.

van der Waals Contact Engineering of Graphene Field-Effect Transistors for Large-Area Flexible Electronics

Graphene has great potential for high-performance flexible electronics. Although studied for more than a decade, contacting graphene efficiently, especially for large-area, flexible electronics, is still a challenge. Here, by engineering the graphene-metal van der Waals (vdW) contact, we demonstrate that ultralow contact resistance is achievable via a bottom-contact strategy incorporating a simple transfer process without any harsh thermal treatment (>150 °C). The majority of the fabricated devices show contact resistances below 200 Ω·μm with values as low as 65 Ω·μm achievable. This is on par with the state-of-the-art top- and edge-contacted graphene field-effect transistors. Further, our study reveals that these contacts, despite the presumed weak nature of the vdW interaction, are stable under various bending conditions, thus guaranteeing compatibility with flexible electronics with improved performance. This work illustrates the potential of the previously underestimated vdW contact approach for large-area flexible electronics.

Simplified detection of the hybridized DNA using a graphene field effect transistor

Detection of disease-related gene expression by DNA hybridization is a useful diagnostic method. In this study a monolayer graphene field effect transistor (GFET) was fabricated for the detection of a particular single-stranded DNA (target DNA). The probe DNA, which is a single-stranded DNA with a complementary nucleotide sequence, was directly immobilized onto the graphene surface without any linker. The V_Dirac was shifted to the negative direction in the probe DNA immobilization. A further shift of V_Dirac in the negative direction was observed when the target DNA was applied to GFET, but no shift was observed upon the application of non-complementary mismatched DNA. Direct immobilization of double-stranded DNA onto the graphene surface also shifted the V_Dirac in the negative direction to the same extent as that of the shift induced by the immobilization of probe DNA and following target DNA application. These results suggest that the further shift of V_Dirac after application of the target DNA to the GFET was caused by the hybridization between the probe DNA and target DNA.