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Grégoire G, Gil E, Zeghouane M, Bougerol C, Hijazi H, Castelluci D, Dubrovskii VG, Trassoudaine A, Goktas NI, LaPierre RR, André Y. Long catalyst-free InAs nanowires grown on silicon by HVPE. CrystEngComm 2021. [DOI: 10.1039/d0ce01385d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report for the first time on the hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires on Si(111) substrate. The thermodynamic and kinetic mechanisms involved during the growth of such long nanowires are identified.
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Affiliation(s)
- Gabin Grégoire
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | - Evelyne Gil
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | - Mohammed Zeghouane
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | | | | | - Dominique Castelluci
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | | | - Agnès Trassoudaine
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
| | | | - Ray R. LaPierre
- Department of Engineering Physics
- McMaster University
- Hamilton
- Canada
| | - Yamina André
- Université Clermont Auvergne
- CNRS
- SIGMA Clermont
- Institut Pascal
- F-63000 Clermont-Ferrand
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Sun Q, Pan D, Li M, Zhao J, Chen P, Lu W, Zou J. In situ TEM observation of the vapor-solid-solid growth of <001[combining macron]> InAs nanowires. NANOSCALE 2020; 12:11711-11717. [PMID: 32452500 DOI: 10.1039/d0nr02892d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <001[combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of <001[combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of <001[combining macron]> III-V nanowires, which provides pathways in controlling the growth of <001[combining macron]> semiconductor nanowires.
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Affiliation(s)
- Qiang Sun
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Meng Li
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia. and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072, Australia
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Sun Q, Gao H, Zhang X, Yao X, Zheng K, Chen P, Lu W, Zou J. Free-Standing InAs Nanobelts Driven by Polarity in MBE. ACS APPLIED MATERIALS & INTERFACES 2019; 11:44609-44616. [PMID: 31684720 DOI: 10.1021/acsami.9b15575] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this study, we demonstrated the Au-catalyzed growth of free-standing defect-free zinc-blende structured InAs nanobelts on the GaAs {111}B substrate by molecular beam epitaxy. Through detailed morphological, chemical, and structural characterizations using advanced electron microscopy, it was found that the nanobelts grew along the ⟨001̅⟩ direction, induced by Au catalysts via vapor-solid-solid mechanism, with features of {001̅} catalyst/nanobelt interfaces and extensive {11̅0} surfaces. The formation of the belt-shaped morphology of our nanostructures resulted from a faster lateral growth rate along the ±[110] direction than that along the ±[11̅0] direction, driven by polarity. This study provides insights into understanding the growth of free-standing zinc-blende structured <001̅> InAs nanobelts.
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Affiliation(s)
| | | | - Xutao Zhang
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road , Beijing 100049 , China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
- University of Chinese Academy of Sciences , No. 19A Yuquan Road , Beijing 100049 , China
| | - Kun Zheng
- Institute of Microstructure and Properties of Advanced Materials , Beijing University of Technology , Beijing 100124 , China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
| | - Wei Lu
- State Key Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yutian Road , Shanghai 200083 , China
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Abstract
Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices.
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da Silva BC, Oliveira DS, Iikawa F, Couto ODD, Bettini J, Zagonel LF, Cotta MA. Exploring Au Droplet Motion in Nanowire Growth: A Simple Route toward Asymmetric GaP Morphologies. NANO LETTERS 2017; 17:7274-7282. [PMID: 29111763 DOI: 10.1021/acs.nanolett.7b02770] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Here we show a new nanowire growth procedure, exploring the thermally activated motion of Au droplets on III-V surfaces. We show that by setting a single growth parameter we can activate the crawling motion of Au droplets in vacuum and locally modify surface composition in order to enhance vapor-solid (VS) growth along oxide-free areas on the trail of the metal particle. Asymmetric VS growth rates are comparable in magnitude to the vapor-liquid-solid growth, producing unconventional wurtzite GaP morphologies, which shows negligible defect density as well as optical signal in the green spectral region. Finally, we demonstrate that this effect can also be explored in different substrate compositions and orientations with the final shape finely tuned by group III flow and nanoparticle size. This distinct morphology for wurtzite GaP nanomaterials can be interesting for the design of nanophotonics devices.
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Affiliation(s)
- Bruno C da Silva
- Institute of Physics"Gleb Wataghin", University of Campinas , 13083-859 Campinas, São Paulo, Brazil
| | - Douglas S Oliveira
- Institute of Physics"Gleb Wataghin", University of Campinas , 13083-859 Campinas, São Paulo, Brazil
| | - Fernando Iikawa
- Institute of Physics"Gleb Wataghin", University of Campinas , 13083-859 Campinas, São Paulo, Brazil
| | - Odilon D D Couto
- Institute of Physics"Gleb Wataghin", University of Campinas , 13083-859 Campinas, São Paulo, Brazil
| | - Jefferson Bettini
- Brazilian Nanotechnology National Laboratory, National Center for Research in Energy and Materials , C P 6192, 13083-970 Campinas, São Paulo, Brazil
| | - Luiz F Zagonel
- Institute of Physics"Gleb Wataghin", University of Campinas , 13083-859 Campinas, São Paulo, Brazil
| | - Mônica A Cotta
- Institute of Physics"Gleb Wataghin", University of Campinas , 13083-859 Campinas, São Paulo, Brazil
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Ho DT, Kwon SY, Kim SY. Metal [100] Nanowires with Negative Poisson's Ratio. Sci Rep 2016; 6:27560. [PMID: 27282358 PMCID: PMC4901344 DOI: 10.1038/srep27560] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2016] [Accepted: 05/20/2016] [Indexed: 11/25/2022] Open
Abstract
When materials are under stretching, occurrence of lateral contraction of materials is commonly observed. This is because Poisson's ratio, the quantity describes the relationship between a lateral strain and applied strain, is positive for nearly all materials. There are some reported structures and materials having negative Poisson's ratio. However, most of them are at macroscale, and reentrant structures and rigid rotating units are the main mechanisms for their negative Poisson's ratio behavior. Here, with numerical and theoretical evidence, we show that metal [100] nanowires with asymmetric cross-sections such as rectangle or ellipse can exhibit negative Poisson's ratio behavior. Furthermore, the negative Poisson's ratio behavior can be further improved by introducing a hole inside the asymmetric nanowires. We show that the surface effect inducing the asymmetric stresses inside the nanowires is a main origin of the superior property.
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Affiliation(s)
- Duc Tam Ho
- Department of Mechanical Engineering, Ulsan National Institute
of Science and Technology, Ulsan
44919, South Korea
| | - Soon-Yong Kwon
- School of Materials Science and Engineering, Ulsan National
Institute of Science and Technology, Ulsan
44919, South Korea
| | - Sung Youb Kim
- Department of Mechanical Engineering, Ulsan National Institute
of Science and Technology, Ulsan
44919, South Korea
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Zhang Z, Chen PP, Lu W, Zou J. Defect-free thin InAs nanowires grown using molecular beam epitaxy. NANOSCALE 2016; 8:1401-1406. [PMID: 26671780 DOI: 10.1039/c5nr06429e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this study, we designed a simple method to achieve the growth of defect-free thin InAs nanowires with a lateral dimension well below their Bohr radius on different substrate orientations. By depositing and annealing a thin layer of Au thin film on a (100) substrate surface, we have achieved the growth of defect-free uniform-sized thin InAs nanowires. This study provides a strategy to achieve the growth of pure defect-free thin nanowires.
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Affiliation(s)
- Zhi Zhang
- Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia.
| | - Ping-Ping Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia. and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, QLD 4072, Australia
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