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Włodarski M, Nowak MP, Putkonen M, Nyga P, Norek M. Surface Modification of ZnO Nanotubes by Ag and Au Coatings of Variable Thickness: Systematic Analysis of the Factors Leading to UV Light Emission Enhancement. ACS OMEGA 2024; 9:1670-1682. [PMID: 38222608 PMCID: PMC10785295 DOI: 10.1021/acsomega.3c08253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 12/07/2023] [Accepted: 12/11/2023] [Indexed: 01/16/2024]
Abstract
Surface modification by plasmonic metals is one of the most promising ways to increase the band-to-band excitonic recombination in zinc oxide (ZnO) nanostructures. However, the metal-induced modulation of the UV light emission depends strongly on the production method, making it difficult to recognize the mechanism responsible for charge/energy transfer between the semiconductor and a metal. Therefore, in this study, the ZnO/Ag and Au hybrids were produced by the same, fully controlled experimental approach. ZnO nanotubes (NTs), fabricated by a template-assisted ALD synthesis, were coated by metals of variable mass thickness (1-6.5 nm thick) using the electron beam PVD technique. The deposited Ag and Au metals grew in the form of island films made of metallic nanoparticles (NPs). The size of the NPs and their size distribution decreased, while the spacing between the NPs increased as the mass of the deposited Ag and Au metals decreased. Systematic optical analysis allowed us to unravel a specific role of surface defects in ZnO NTs in the processes occurring at the ZnO/metal interface. The enhancement of the UV emission was observed only in the ZnO/Ag system. The phenomena were tentatively ascribed to the coupling between the defect-related (DL) excitonic recombination in ZnO and the localized surface plasmon resonance (LSPR) at the Ag NPs. However, the enhancement of UV light was observed only for a narrow range of Ag NP dimensions, indicating the great importance of the size and internanoparticle spacing in the plasmonic coupling. Moreover, the enhancement factors were much stronger in ZnO NTs characterized by robust DL-related emission before metal deposition. In contrast to Ag, Au coatings caused quenching of the UV emission from ZnO NTs, which was attributed to the uncoupling between the DL and LSP energies in this system and a possible formation of the ohmic contact between the Au metal and the ZnO.
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Affiliation(s)
- Maksymilian Włodarski
- Institute
of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
| | - Michał P. Nowak
- Institute
of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
| | - Matti Putkonen
- Department
of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki, Finland
| | - Piotr Nyga
- Institute
of Optoelectronics, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
| | - Małgorzata Norek
- Institute
of Materials Science and Engineering, Faculty of Advanced Technologies
and Chemistry, Military University of Technology, 2 Gen. Sylwestra Kaliskiego Str., 00-908 Warsaw, Poland
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Repp D, Barreda A, Vitale F, Staude I, Peschel U, Ronning C, Pertsch T. Lasing modes in ZnO nanowires coupled to planar metals. OPTICS EXPRESS 2023; 31:3364-3378. [PMID: 36785331 DOI: 10.1364/oe.480742] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Accepted: 12/19/2022] [Indexed: 06/18/2023]
Abstract
Semiconductor nanowire lasers can be subject to modifications of their lasing threshold resulting from a variation of their environment. A promising choice is to use metallic substrates to gain access to low-volume Surface-Plasmon-Polariton (SPP) modes. We introduce a simple, yet quantitatively precise model that can serve to describe mode competition in nanowire lasers on metallic substrates. We show that an aluminum substrate can decrease the lasing threshold for ZnO nanowire lasers while for a silver substrate, the threshold increases compared with a dielectric substrate. Generalizing from these findings, we make predictions describing the interaction between planar metals and semiconductor nanowires, which allow to guide future improvements of highly-integrated laser sources.
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Wang L, Li C, Li J, Zhang X, Li X, Cui Y, Xia Y, Zhang Y, Mao S, Ji Y, Sheng W, Han X. Liquid-phase scanning electron microscopy for single membrane protein imaging. Biochem Biophys Res Commun 2022; 590:163-168. [PMID: 34979317 DOI: 10.1016/j.bbrc.2021.12.081] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Accepted: 12/22/2021] [Indexed: 11/02/2022]
Abstract
Liquid-phase electron microscopy is highly desirable for observing biological samples in their native liquid state at high resolution. We developed liquid imaging approaches for biological cells using scanning electron microscopy. Novel approaches included scanning transmission electron imaging using a liquid-cell apparatus (LC-STEM), as well as correlative cathodoluminescence and electron microscopy (CCLEM) imaging. LC-STEM enabled imaging at a ∼2 nm resolution and excellent contrast for the precise recognition of localization, distribution, and configuration of individually labeled membrane proteins on the native cells in solution. CCLEM improved the resolution of fluorescent images down to 10 nm. Liquid SEM technologies will bring unique and wide applications to the study of the structure and function of cells and membrane proteins in their near-native states at the monomolecular level.
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Affiliation(s)
- Li Wang
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Changshuo Li
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Jintao Li
- Beijing Key Laboratory of Environmental and Viral Oncology, Beijing International Science and Technology, Cooperation Base of Antivirus Drug, College of Life Science and Bioengineering, Beijing University of Technology, Beijing, 100124, China
| | - Xiaofei Zhang
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Xiaochen Li
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Yiran Cui
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Yang Xia
- Beijing Key Laboratory of Environmental and Viral Oncology, Beijing International Science and Technology, Cooperation Base of Antivirus Drug, College of Life Science and Bioengineering, Beijing University of Technology, Beijing, 100124, China
| | - Yinqi Zhang
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Shengcheng Mao
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Yuan Ji
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China.
| | - Wang Sheng
- Beijing Key Laboratory of Environmental and Viral Oncology, Beijing International Science and Technology, Cooperation Base of Antivirus Drug, College of Life Science and Bioengineering, Beijing University of Technology, Beijing, 100124, China.
| | - Xiaodong Han
- Beijing Key Laboratory of Microstructure and Property of Solids, Institute of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China.
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Zhao J, Cui S, Zhang X, Li W. Significantly enhanced UV luminescence by plasmonic metal on ZnO nanorods patterned by screen-printing. NANOTECHNOLOGY 2018; 29:355703. [PMID: 29882750 DOI: 10.1088/1361-6528/aacb52] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A smart synthetic method is conceived to construct large batches of ZnO nanostructures to meet market demand for light-emitting diodes. Utilizing the localized surface plasmon resonance of metal nanoparticles (NPs) facilitates the recombination of electron-hole pairs and the release of photons. Compared to raw ZnO nanorods (NRs), ZnO NRs@HfO2@Al NPs show a ∼120× enhancement in ultraviolet (UV) photoluminescence (PL), while ZnO NRs@HfO2@Ag NPs show a six-fold enhancement. Because the surface plasmon energy of Al is nearer the ZnO band gap, the PL enhancement of ZnO NRs covered with Al is stronger than that of those covered with Ag. Based on this analysis, three-dimensional graphical ZnO NR arrays were manufactured by screen-printing, a mass production technique. After covering the arrays with layers of HfO2 and Al NPs, the UV PL intensities of the corresponding substrates were increased by approximately 16×. This indicates the potential to mass-produce highly efficient optoelectronic devices.
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Affiliation(s)
- Jun Zhao
- Department of Physics, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Wuhan University, Wuhan, 430072, People's Republic of China
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Wu Y, Dai Y, Jiang S, Ma C, Lin Y, Du D, Wu Y, Ding H, Zhang Q, Pan N, Wang X. Interfacially Al-doped ZnO nanowires: greatly enhanced near band edge emission through suppressed electron-phonon coupling and confined optical field. Phys Chem Chem Phys 2017; 19:9537-9544. [PMID: 28345696 DOI: 10.1039/c7cp00973a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Aluminium (Al)-doped zinc oxide (ZnO) nanowires (NWs) with a unique core-shell structure and a Δ-doping profile at the interface were successfully grown using a combination of chemical vapor deposition re-growth and few-layer AlxOy atomic layer deposition. Unlike the conventional heavy doping which degrades the near-band-edge (NBE) luminescence and increases the electron-phonon coupling (EPC), it was found that there was an over 20-fold enhanced NBE emission and a notably-weakened EPC in this type of interfacially Al-doped ZnO NWs. Further experiments revealed a greatly suppressed nonradiative decay process and a much enhanced radiative recombination rate. By comparing the finite-difference time-domain simulation with the experimental results from intentionally designed different NWs, this enhanced radiative decay rate was attributed to the Purcell effect induced by the confined and intensified optical field within the interfacial layer. The ability to manipulate the confinement, transport and relaxation dynamics of ZnO excitons can be naturally guaranteed with this unique interfacial Δ-doping strategy, which is certainly desirable for the applications using ZnO-based nano-photonic and nano-optoelectronic devices.
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Affiliation(s)
- Yiming Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Yanmeng Dai
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Shenlong Jiang
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Chao Ma
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Yue Lin
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Dongxue Du
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Yukun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Huaiyi Ding
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
| | - Qun Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Nan Pan
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China and Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Xiaoping Wang
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China. and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China and Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
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Wang X, Mao S, Zhang J, Li Z, Deng Q, Ning J, Yang X, Wang L, Ji Y, Li X, Liu Y, Zhang Z, Han X. MEMS Device for Quantitative In Situ Mechanical Testing in Electron Microscope. MICROMACHINES 2017. [PMCID: PMC6190302 DOI: 10.3390/mi8020031] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
In this work, we designed a micro-electromechanical systems (MEMS) device that allows simultaneous direct measurement of mechanical properties during deformation under external stress and characterization of the evolution of nanomaterial microstructure within a transmission electron microscope. This MEMS device makes it easy to establish the correlation between microstructure and mechanical properties of nanomaterials. The device uses piezoresistive sensors to measure the force and displacement of nanomaterials qualitatively, e.g., in wire and thin plate forms. The device has a theoretical displacement resolution of 0.19 nm and a force resolution of 2.1 μN. The device has a theoretical displacement range limit of 5.47 μm and a load range limit of 55.0 mN.
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Affiliation(s)
- Xiaodong Wang
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
- Department of Fundamental Sciences, Chinese People’s Armed Police Force Academy, Langfang 065000, China
| | - Shengcheng Mao
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
- Correspondence: (S.M.); (Y.L.); (X.H.); Tel.: +86-10-6739-6769 (S.M.); +61-8-6488-3132 (Y.L.); +86-10-6739-6087 (X.H.)
| | - Jianfei Zhang
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
| | - Zhipeng Li
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
| | - Qingsong Deng
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
| | - Jin Ning
- Research Center of Engineering for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
| | - Xudong Yang
- College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;
| | - Li Wang
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
| | - Yuan Ji
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
| | - Xiaochen Li
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
| | - Yinong Liu
- School of Mechanical and Chemical Engineering, The University of Western Australia, Crawley 6009, WA, Australia
- Correspondence: (S.M.); (Y.L.); (X.H.); Tel.: +86-10-6739-6769 (S.M.); +61-8-6488-3132 (Y.L.); +86-10-6739-6087 (X.H.)
| | - Ze Zhang
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310008, China
| | - Xiaodong Han
- Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China; (X.W.); (J.Z.); (Z.L.); (Q.D.); (L.W.); (Y.J.); (X.L.); (Z.Z.)
- Correspondence: (S.M.); (Y.L.); (X.H.); Tel.: +86-10-6739-6769 (S.M.); +61-8-6488-3132 (Y.L.); +86-10-6739-6087 (X.H.)
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