1
|
Tseng R, Wang ST, Ahmed T, Pan YY, Chen SC, Shih CC, Tsai WW, Chen HC, Kei CC, Chou TT, Hung WC, Chen JC, Kuo YH, Lin CL, Woon WY, Liao SS, Lien DH. Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors. Nat Commun 2023; 14:5243. [PMID: 37640725 PMCID: PMC10462674 DOI: 10.1038/s41467-023-41041-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Accepted: 08/21/2023] [Indexed: 08/31/2023] Open
Abstract
The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (VT) in ultrathin transistors is challenging, as traditional doping methods are not readily applicable. In this work, we introduce a optical-thermal method, combining ultraviolet (UV) illumination and oxygen annealing, to achieve broad-range VT tunability in ultrathin In2O3. This method can achieve both positive and negative VT tuning and is reversible. The modulation of sheet carrier density, which corresponds to VT shift, is comparable to that obtained using other doping and capacitive charging techniques in other ultrathin transistors, including 2D semiconductors. With the controllability of VT, we successfully demonstrate the realization of depletion-load inverter and multi-state logic devices, as well as wafer-scale VT modulation via an automated laser system, showcasing its potential for low-power circuit design and non-von Neumann computing applications.
Collapse
Affiliation(s)
- Robert Tseng
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Sung-Tsun Wang
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Tanveer Ahmed
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Yi-Yu Pan
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Shih-Chieh Chen
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Che-Chi Shih
- Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Wu-Wei Tsai
- Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Hai-Ching Chen
- Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Chi-Chung Kei
- Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan
| | - Tsung-Te Chou
- Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan
| | - Wen-Ching Hung
- Department of Mechanical Engineering, National Central University, Jhongli City, Taiwan
- K-Jet Laser Tek Inc., Hsinchu, Taiwan
| | - Jyh-Chen Chen
- Department of Mechanical Engineering, National Central University, Jhongli City, Taiwan
| | - Yi-Hou Kuo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
| | - Wei-Yen Woon
- Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
| | - Szuya Sandy Liao
- Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
| | - Der-Hsien Lien
- Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
| |
Collapse
|
2
|
Esterhuizen M, Lutsko M, Kim Y, Yoon H, Park CB, Kim YJ, Pflugmacher S. Titanium (IV) oxide anatase nanoparticles as vectors for diclofenac: assessing the antioxidative responses to single and combined exposures in the aquatic macrophyte Egeria densa. ECOTOXICOLOGY (LONDON, ENGLAND) 2023; 32:394-402. [PMID: 37000303 PMCID: PMC10102128 DOI: 10.1007/s10646-023-02646-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Accepted: 03/16/2023] [Indexed: 06/19/2023]
Abstract
Titanium dioxide, frequently used in commonplace products, is now regularly detected in aquatic environments. Understanding its toxic effects on native biota is essential. However, combined toxicity with commonly occurring pollutants, such as the pharmaceutical diclofenac, may provide more insight into environmental situations. Therefore, the present study aimed to evaluate the effects of titanium dioxide and diclofenac, individually and combined, on the macrophyte Egeria densa. Diclofenac uptake and removal by the macrophyte were assessed. Diclofenac and titanium dioxide were mixed prior to exposure to allow binding, which was assessed. Toxicity of the individual compounds and the combination was evaluated by assaying enzymes as bioindicators of biotransformation and the antioxidative system. Cytosolic glutathione S-transferase and glutathione reductase activities were increased by diclofenac, titanium dioxide, and the combination. Both enzymes' activities were more significantly elevated by diclofenac and the combination than nanoparticles alone. Microsomal glutathione S-transferase was unaffected by diclofenac exposure but inhibited with titanium dioxide and the mixture. Diclofenac elicited the most significant response. Based on the data, the cytosolic enzymes effectively prevented damage.
Collapse
Affiliation(s)
- Maranda Esterhuizen
- Ecosystems and Environment Research Programme, Faculty of Biological and Environmental Sciences, Niemenkatu 73, University of Helsinki, 15140, Lahti, Finland.
- Helsinki Institute of Sustainability Science (HELSUS), Fabianinkatu 33, 00014, Helsinki, Finland.
- Clayton H. Riddell Faculty of Environment, Earth, and Resources, University of Manitoba, Wallace Building, 125 Dysart Road, Winnipeg, MB, R3T 2N2, Canada.
- Korea Institute of Science and Technology Europe (KIST Europe) Forschungsgesellschaft GmbH, Joint Laboratory of Applied Ecotoxicology, Environmental Safety Group, Universität des Saarlandes Campus E7 1, 66123, Saarbrücken, Germany.
| | - Mariia Lutsko
- Department of Biotechnology, Technische Universität Berlin, Gustav-Meyer-Allee 25, 13355, Berlin, Germany
| | - Youngsam Kim
- Korea Institute of Science and Technology Europe (KIST Europe) Forschungsgesellschaft GmbH, Joint Laboratory of Applied Ecotoxicology, Environmental Safety Group, Universität des Saarlandes Campus E7 1, 66123, Saarbrücken, Germany
| | - Hakwon Yoon
- Environmental Exposure & Toxicology Research Center, Korea Institute of Toxicology, 17, Jegok-gil, Jinju, 52834, Republic of Korea
| | - Chang-Beom Park
- Environmental Exposure & Toxicology Research Center, Korea Institute of Toxicology, 17, Jegok-gil, Jinju, 52834, Republic of Korea
| | - Young Jun Kim
- Korea Institute of Science and Technology Europe (KIST Europe) Forschungsgesellschaft GmbH, Joint Laboratory of Applied Ecotoxicology, Environmental Safety Group, Universität des Saarlandes Campus E7 1, 66123, Saarbrücken, Germany
| | - Stephan Pflugmacher
- Clayton H. Riddell Faculty of Environment, Earth, and Resources, University of Manitoba, Wallace Building, 125 Dysart Road, Winnipeg, MB, R3T 2N2, Canada
| |
Collapse
|
3
|
Research and Progress of Transparent, Flexible Tin Oxide Ultraviolet Photodetector. CRYSTALS 2021. [DOI: 10.3390/cryst11121479] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for wearable devices continues to increase, the UV photodetector, which is one of the most important sensors, has put forward higher requirements for bending resistance, durability, and transparency. Tin oxide (SnO2) has a wide band gap, high ultraviolet exciton gain, etc., and is considered to be an ideal material for preparing UV photodetectors. At present, SnO2-based UV photodetectors have a transparency of more than 70% in the visible light region and also have excellent flexibility of 160% tensile strain. Focusing on SnO2 nanostructures, the article mainly summarizes the progress of SnO2 UV photodetectors in flexibility and transparency in recent years and proposes feasible optimization directions and difficulties.
Collapse
|
4
|
Improved Photoresponse Characteristics of a ZnO-Based UV Photodetector by the Formation of an Amorphous SnO 2 Shell Layer. SENSORS 2021; 21:s21186124. [PMID: 34577331 PMCID: PMC8473163 DOI: 10.3390/s21186124] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Revised: 09/03/2021] [Accepted: 09/07/2021] [Indexed: 01/11/2023]
Abstract
Although ZnO nanostructure-based photodetectors feature a well-established system, they still present difficulties when being used in practical situations due to their slow response time. In this study, we report on how forming an amorphous SnO2 (a-SnO2) shell layer on ZnO nanorods (NRs) enhances the photoresponse speed of a ZnO-based UV photodetector (UV PD). Our suggested UV PD, consisting of a ZnO/a-SnO2 NRs core–shell structure, shows a rise time that is 26 times faster than a UV PD with bare ZnO NRs under 365 nm UV irradiation. In addition, the light responsivity of the ZnO/SnO2 NRs PD simultaneously increases by 3.1 times, which can be attributed to the passivation effects of the coated a-SnO2 shell layer. With a wide bandgap (~4.5 eV), the a-SnO2 shell layer can successfully suppress the oxygen-mediated process on the ZnO NRs surface, improving the photoresponse properties. Therefore, with a fast photoresponse speed and a low fabrication temperature, our as-synthesized, a-SnO2-coated ZnO core–shell structure qualifies as a candidate for ZnO-based PDs.
Collapse
|
5
|
Younis A, Lin CH, Guan X, Shahrokhi S, Huang CY, Wang Y, He T, Singh S, Hu L, Retamal JRD, He JH, Wu T. Halide Perovskites: A New Era of Solution-Processed Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005000. [PMID: 33938612 DOI: 10.1002/adma.202005000] [Citation(s) in RCA: 48] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 10/29/2020] [Indexed: 05/26/2023]
Abstract
Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.
Collapse
Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
- Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhir Campus, Zallaq, Kingdom of Bahrain
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Shamim Shahrokhi
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Yutao Wang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Tengyue He
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jose Ramon Duran Retamal
- Computer, Electrical and Mathematical Sciences and Engineering, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| |
Collapse
|
6
|
Costa IM, de Araújo EP, Arantes AN, Zaghete MA, Chiquito AJ. Unusual effects of nanowire-nanowire junctions on the persistent photoconductivity in SnO 2 nanowire network devices. NANOTECHNOLOGY 2020; 32:015702. [PMID: 33043905 DOI: 10.1088/1361-6528/abb7b2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The persistent photoconductivity (PPC) effect is a commonly observed behavior in SnO2 nanostructures. Here we described and studied this effect through a comparative study, based on measurements of electronic transport using network as well as single devices built from SnO2 nanowires under different experimental conditions. At room temperature, the PPC effect was observed to be more accentuated in single nanowire devices. It was found that nanowire-nanowire junctions play a fundamental role in the device behavior: the decay time of nanowire network (τ = 52 s) is about three orders of magnitude lower than those of single nanowire (τ = 4.57 × 104 s). Additionally, it was confirmed that the PPC effect was directly related to the amount of oxygen present in the environment and it is destroyed with increasing temperature. Furthermore, the PPC effect was interpreted based on the surface effect that depends on the capture/emission of electrons by the surface states.
Collapse
Affiliation(s)
- I M Costa
- LIEC, Instituto de Química, Universidade Estadual Paulista - UNESP, Araraquara, SP 14800-060, Brazil. NanOLaB, Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP 13565-905, Brazil
| | | | | | | | | |
Collapse
|
7
|
Fu HC, Varadhan P, Lin CH, He JH. Spontaneous solar water splitting with decoupling of light absorption and electrocatalysis using silicon back-buried junction. Nat Commun 2020; 11:3930. [PMID: 32764537 PMCID: PMC7411053 DOI: 10.1038/s41467-020-17660-0] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2019] [Accepted: 06/30/2020] [Indexed: 12/05/2022] Open
Abstract
Converting sunlight into a storable form of energy by spontaneous water splitting is of great interest but the difficulty in simultaneous management of optical, electrical, and catalytic properties has limited the efficiency of photoelectrochemical (PEC) devices. Herein, we implemented a decoupling scheme of light harvesting and electrocatalysis by employing a back-buried junction (BBJ) PEC cell design, which enables >95% front side light-harvesting, whereas the electrochemical reaction in conjunction with carrier separation/transport/collection occurs on the back side of the PEC cell. The resultant silicon BBJ-PEC half-cell produces a current density of 40.51 mA cm−2 for hydrogen evolution by minimizing optical, electrical, and catalytic losses (as low as 6.11, 1.76, and 1.67 mA cm−2, respectively). Monolithic fabrication also enables three BBJ-PEC cells to be connected in series as a single module, enabling unassisted solar water-splitting with a solar-to-hydrogen conversion efficiency of 15.62% and a hydrogen generation rate of 240 μg cm−2 h−1. The simultaneous management of optical, electrical, and catalytic properties is challenging for photoelectrochemical devices. Here, authors design Si back-buried junction photoelectrodes that can be series connected for unassisted water-splitting with a high solar-to-hydrogen efficiency of 15.62%.
Collapse
Affiliation(s)
- Hui-Chun Fu
- Computer, Electrical, and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, (KAUST), Thuwal, 23955-6900, Saudi Arabia.,KAUST Solar Center, KAUST, Thuwal, 23955-6900, Saudi Arabia.,Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR
| | - Purushothaman Varadhan
- Computer, Electrical, and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, (KAUST), Thuwal, 23955-6900, Saudi Arabia.,KAUST Solar Center, KAUST, Thuwal, 23955-6900, Saudi Arabia
| | - Chun-Ho Lin
- Computer, Electrical, and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Computer, Electrical, and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, (KAUST), Thuwal, 23955-6900, Saudi Arabia. .,KAUST Solar Center, KAUST, Thuwal, 23955-6900, Saudi Arabia. .,Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR.
| |
Collapse
|
8
|
Stable Pb2+ ion-selective electrodes based on polyaniline-TiO2 solid contacts. Anal Chim Acta 2020; 1094:26-33. [DOI: 10.1016/j.aca.2019.10.008] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2019] [Revised: 09/14/2019] [Accepted: 10/06/2019] [Indexed: 12/20/2022]
|
9
|
Durán Retamal JR, Kang CF, Lien DH, Kuo WC, Juang ZY, Tsai ML, Ho CH, Juang JY, Hsiao VKS, Chu YH, Li LJ, Wu Y, He JH. A Nanostructuring Method to Decouple Electrical and Thermal Transport through the Formation of Electrically Triggered Conductive Nanofilaments. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705385. [PMID: 29806141 DOI: 10.1002/adma.201705385] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2017] [Indexed: 05/25/2023]
Abstract
Transforming thermal energy into electric energy and vice versa needs the decoupling of electrical transport from thermal transport. An innovative strategy is proposed by forming/disrupting electrically triggered conductive nanofilaments within semiconducting thin films to switch thermoelectric properties between two states without further material modification and manufacturing processes. It can also controllably adjust the degree of decoupling, providing a potential resolution and performance adjustability for heat/coldness control or power consumption reduction on demand.
Collapse
Affiliation(s)
- José Ramón Durán Retamal
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Chen-Fang Kang
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Der-Hsien Lien
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Wei-Cheng Kuo
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan, Republic of China
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, Republic of China
| | - Zhen-Yu Juang
- Physical Sciences and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Meng-Lin Tsai
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Chih-Hsiang Ho
- Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Jenh-Yih Juang
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan, Republic of China
| | - Vincent K S Hsiao
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan, Republic of China
| | - Lain-Jong Li
- Physical Sciences and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Yue Wu
- Department of Chemical and Biological Engineering, Iowa State University, Ames, IA, 50011, USA
| | - Jr-Hau He
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| |
Collapse
|
10
|
Yang C, Xi X, Yu Z, Cao H, Li J, Lin S, Ma Z, Zhao L. Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN Structure. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5492-5497. [PMID: 29350908 DOI: 10.1021/acsami.7b15344] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
On the basis of the laterally porous GaN, we designed and fabricated a composite porous GaN structure with both well-ordered lateral and vertical holes. Compared to the plane GaN, the composite porous GaN structure with the combination of the vertical holes can help to reduce UV reflectance and increase the saturation photocurrent during water splitting by a factor of ∼4.5. Furthermore, we investigated the underlying mechanism for the enhancement of the water splitting performance using a finite-difference time-domain method. The results show that the well-ordered vertical holes can not only help to open the embedded pore channels to the electrolyte at both sides and reduce the migration distance of the gas bubbles during the water splitting reactions but also help to modulate the light field. Using this composite porous GaN structure, most of the incident light can be modulated and trapped into the nanoholes, and thus the electric fields localized in the lateral pores can increase dramatically as a result of the strong optical coupling. Our findings pave a new way to develop GaN photoelectrodes for highly efficient solar water splitting.
Collapse
Affiliation(s)
- Chao Yang
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xin Xi
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Zhiguo Yu
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
| | - Haicheng Cao
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Jing Li
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Shan Lin
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Zhanhong Ma
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Lixia Zhao
- Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences , No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences , No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| |
Collapse
|
11
|
Cong R, Qiao S, Liu J, Mi J, Yu W, Liang B, Fu G, Pan C, Wang S. Ultrahigh, Ultrafast, and Self-Powered Visible-Near-Infrared Optical Position-Sensitive Detector Based on a CVD-Prepared Vertically Standing Few-Layer MoS 2/Si Heterojunction. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700502. [PMID: 29619301 PMCID: PMC5827457 DOI: 10.1002/advs.201700502] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2017] [Revised: 09/28/2017] [Indexed: 05/08/2023]
Abstract
MoS2, as a typical transition metal dichalcogenide, has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, its advantages of strong light absorption and fast intralayer mobility cannot be well developed in the usual reported monolayer/few-layer structures, which make the performances of MoS2-based devices undesirable. Here, large-area, high-quality, and vertically oriented few-layer MoS2 (V-MoS2) nanosheets are prepared by chemical vapor deposition and successfully transferred onto an Si substrate to form the V-MoS2/Si heterojunction. Because of the strong light absorption and the fast carrier transport speed of the V-MoS2 nanosheets, as well as the strong built-in electric field at the interface of V-MoS2 and Si, lateral photovoltaic effect (LPE) measurements suggest that the V-MoS2/Si heterojunction is a self-powered, high-performance position sensitive detector (PSD). The PSD demonstrates ultrahigh position sensitivity over a wide spectrum, ranging from 350 to 1100 nm, with position sensitivity up to 401.1 mV mm-1, and shows an ultrafast response speed of 16 ns with excellent stability and reproducibility. Moreover, considering the special carrier transport process in LPE, for the first time, the intralayer and the interlayer transport times in V-MoS2 are obtained experimentally as 5 and 11 ns, respectively.
Collapse
Affiliation(s)
- Ridong Cong
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| | - Shuang Qiao
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| | - Jihong Liu
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| | - Jiansong Mi
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| | - Wei Yu
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| | - Baolai Liang
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| | - Guangsheng Fu
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| | - Caofeng Pan
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing100083China
- CAS Center for Excellence in NanoscienceNational Center for Nanoscience and Technology (NCNST)Beijing100190P. R. China
| | - Shufang Wang
- Hebei Key Laboratory of Optic‐Electronic Information and MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding071002P. R. China
| |
Collapse
|
12
|
Wawrzyńczyk D, Cichy B, Stęk W, Nyk M. The role of l-cysteine and introduced surface defects in reactive oxygen species generation by ZnO nanoparticles. Dalton Trans 2018; 47:8320-8329. [PMID: 29893391 DOI: 10.1039/c8dt00725j] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
The synthesis and surface functionalization of ZnO nanoparticles were performed, with attention being paid to the possible bio-related applications in light-triggered reactive oxygen species generation.
Collapse
Affiliation(s)
- Dominika Wawrzyńczyk
- Advanced Materials Engineering and Modelling Group
- Faculty of Chemistry
- Wrocław University of Science and Technology
- 50-370 Wrocław
- Poland
| | - Bartłomiej Cichy
- Institute of Low Temperature and Structure Research
- 50-422 Wrocław
- Poland
| | - Wiesław Stęk
- Institute of Low Temperature and Structure Research
- 50-422 Wrocław
- Poland
| | - Marcin Nyk
- Advanced Materials Engineering and Modelling Group
- Faculty of Chemistry
- Wrocław University of Science and Technology
- 50-370 Wrocław
- Poland
| |
Collapse
|
13
|
Ho CH, Retamal JRD, Yang PK, Lee CP, Tsai ML, Kang CF, He JH. Transparent Memory For Harsh Electronics. Sci Rep 2017; 7:44429. [PMID: 28290519 PMCID: PMC5349519 DOI: 10.1038/srep44429] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2016] [Accepted: 02/07/2017] [Indexed: 11/09/2022] Open
Abstract
As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.
Collapse
Affiliation(s)
- C H Ho
- Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
| | - J R Durán Retamal
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - P K Yang
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - C P Lee
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - M L Tsai
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - C F Kang
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science &Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| |
Collapse
|
14
|
Varadhan P, Fu HC, Priante D, Retamal JRD, Zhao C, Ebaid M, Ng TK, Ajia I, Mitra S, Roqan IS, Ooi BS, He JH. Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting. NANO LETTERS 2017; 17:1520-1528. [PMID: 28177248 DOI: 10.1021/acs.nanolett.6b04559] [Citation(s) in RCA: 61] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Hydrogen production via photoelectrochemical water-splitting is a key source of clean and sustainable energy. The use of one-dimensional nanostructures as photoelectrodes is desirable for photoelectrochemical water-splitting applications due to the ultralarge surface areas, lateral carrier extraction schemes, and superior light-harvesting capabilities. However, the unavoidable surface states of nanostructured materials create additional charge carrier trapping centers and energy barriers at the semiconductor-electrolyte interface, which severely reduce the solar-to-hydrogen conversion efficiency. In this work, we address the issue of surface states in GaN nanowire photoelectrodes by employing a simple and low-cost surface treatment method, which utilizes an organic thiol compound (i.e., 1,2-ethanedithiol). The surface-treated photocathode showed an enhanced photocurrent density of -31 mA/cm2 at -0.2 V versus RHE with an incident photon-to-current conversion efficiency of 18.3%, whereas untreated nanowires yielded only 8.1% efficiency. Furthermore, the surface passivation provides enhanced photoelectrochemical stability as surface-treated nanowires retained ∼80% of their initial photocurrent value and produced 8000 μmol of gas molecules over 55 h at acidic conditions (pH ∼ 0), whereas the untreated nanowires demonstrated only <4 h of photoelectrochemical stability. These findings shed new light on the importance of surface passivation of nanostructured photoelectrodes for photoelectrochemical applications.
Collapse
Affiliation(s)
- Purushothaman Varadhan
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Hui-Chun Fu
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Davide Priante
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Jose Ramon Duran Retamal
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Chao Zhao
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Mohamed Ebaid
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Tien Khee Ng
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Idirs Ajia
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Somak Mitra
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Iman S Roqan
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Boon S Ooi
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Electrical Engineering Program and ‡Materials Science and Engineering Program, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia
| |
Collapse
|
15
|
Mandal S, Franosch T. Diverging Time Scale in the Dimensional Crossover for Liquids in Strong Confinement. PHYSICAL REVIEW LETTERS 2017; 118:065901. [PMID: 28234501 DOI: 10.1103/physrevlett.118.065901] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2016] [Indexed: 06/06/2023]
Abstract
We study a strongly interacting dense hard-sphere system confined between two parallel plates by event-driven molecular dynamics simulations to address the fundamental question of the nature of the 3D to 2D crossover. As the fluid becomes more and more confined the dynamics of the transverse and lateral degrees of freedom decouple, which is accompanied by a diverging time scale separating 2D from 3D behavior. Relying on the time-correlation function of the transversal kinetic energy, the scaling behavior and its density dependence is explored. Surprisingly, our simulations reveal that its time dependence becomes purely exponential such that memory effects can be ignored. We rationalize our findings quantitatively in terms of an analytic theory which becomes exact in the limit of strong confinement.
Collapse
Affiliation(s)
- Suvendu Mandal
- Institut für Theoretische Physik, Universität Innsbruck, Technikerstraße 21A, A-6020 Innsbruck, Austria
| | - Thomas Franosch
- Institut für Theoretische Physik, Universität Innsbruck, Technikerstraße 21A, A-6020 Innsbruck, Austria
| |
Collapse
|
16
|
Subjalearndee N, Intasanta V. Thermal relaxation in combination with fiberglass confined interpenetrating networks: a key calcination process for as-desired free standing metal oxide nanofibrous membranes. RSC Adv 2016. [DOI: 10.1039/c6ra15086a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Using Pd/Pt-decorated solar light active ZnWO4/mixed-phased TiO2 nanofibers as a model subject, we investigate the prerequisites for the construction of mechanically stable metal oxide nanofibrous membranes.
Collapse
Affiliation(s)
- Nakarin Subjalearndee
- Nano Functional Textile Laboratory
- National Nanotechnology Center
- National Science and Technology Development Agency
- Klong Luang
- Thailand
| | - Varol Intasanta
- Nano Functional Textile Laboratory
- National Nanotechnology Center
- National Science and Technology Development Agency
- Klong Luang
- Thailand
| |
Collapse
|