Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures

Detection of Ultraviolet Light by Graphene Oxide Derived from Epitaxial Graphene on SiC and Graphite

Because of their tunable band gap, flexibility, and high surface-to-volume ratio, two-dimensional materials have appeared as the most promising materials for ultraviolet (UV) light sensors. Here, we report the detection of UV light by oxidized epitaxial graphene (EG) formed on the Si-face of the SiC substrate and graphene oxide (GO) produced by Hummer oxidation of graphite. Both epitaxial graphene oxide (EGO) and GO were characterized by Raman and X-ray photoelectron spectroscopy, and the devices were made simply by placing two parallel copper electrodes onto the graphene oxide layers. Irradiation of UV light onto the graphene oxides was realized by the real-time current measurements between two electrodes at a fixed bias of 1 V. The sudden upward jump of the current (Ids) upon UV light irradiation was observed in both EGO- and GO-based devices, which were returned to the original value, while the UV source was turned OFF. The photocurrent (I ph), the magnitude of the current jump by the UV irradiation, for EGO, was estimated at 8 mA with a channel distance of 2 mm and UV power of 80 mW/cm2. The I phlinearly increases with UV power. In the case of GO, I phwas estimated at 0.2 nA with a similar setup. The photoresponse time and responsivity for EGO are ∼11 s and 5.6 A/W, respectively, which are higher than those of GO. The quantum efficiencies (η) for EGO and GO are calculated as 1907 and 2.3 × 10-6 %, respectively, with an incident power of UV light at 9 mW/cm-2. Because of the advantages of the EG on SiC concerning the stability and wafer scale growth, the present study is expected to lead the development of lab-on-chip-based ultrasensitive UV sensors.

Rational design of comb-like 1D-1D ZnO-ZnSe heterostructures toward their excellent performance in flexible photodetectors

One-dimensional (1D) Zn-based heterostructures have attracted considerable interest in the field of photodetection because of their tunable properties, flexibility, and unique optoelectronic properties. However, designing 1D multi-component Zn-based heterostructures for advanced photodetectors is still a great challenge. Herein, comb-like 1D-1D ZnO-ZnSe heterostructures with ZnO and ZnSe nanowires (NWs) comprising the shaft and teeth of a comb are reported. The length of the ZnO NWs can be modulated in the range of 300-1200 nm. Microstructural characterizations confirm that the 1D heterostructure clearly shows the spatial distribution of individual components. The well-designed structure displays an extended broadband photoresponse and higher photosensitivity than pure ZnSe NWs. Furthermore, ZnSe NWs with an appropriate length of ZnO branches show increased photoresponses of 3835% and 798% compared to those of pure ZnSe NWs under green and red-light irradiation, respectively. In addition, the integrated flexible photodetector presents excellent folding endurance after 1000 bending tests. This well-designed structure has significant potential for other 1D-based semiconductors in optoelectronic applications.

Spin Texture Sensitive Photodetection by Dion-Jacobson Tin Halide Perovskites

The organic spacer molecule is known to regulate the optoelectronic properties of two-dimensional (2D) perovskites. We show that the spacer layer thickness determines the nature of optical transitions, direct or indirect, by controlling the structural properties of the inorganic layer. The spin-orbit interactions lead to different electron spin orientations for the states associated with the conduction band minimum (CBM) and the valence band maximum (VBM). This leads to a direct as well as an indirect component of the transitions, despite them being direct in momentum space. The shorter chains have a larger direct component, leading to a better optoelectronic performance. The mixed halide Sn2+ Dion-Jacobson (DJ) perovskite with the shortest 4-C diammonium spacer outshines the photodetection parameters of those having longer (6-C and 8-C) spacers and the corresponding Ruddlesden-Popper (RP) phases. The DJ system with a 4-C spacer and equimolar Br/I embodies an unprecedentedly high responsivity of 78.1 A W-1 under 3 V potential bias at 485 nm wavelength, among the DJ perovskites. Without any potential bias, this phase manifests the self-powered photodetection parameters of 0.085 A W-1 and 9.9 × 1010 jones. The unusual role of electron spin texture in these high-performance photodetectors of the lead-free DJ perovskites provides an avenue to exploit the information coded in spins for semiconductor devices without any ferromagnetic supplement or magnetic field.

Transition Metal Ions Influence the Performance of Photodetector of Two-Dimensional CdS Nanoplatelets

Transition metal-doped two-dimensional (2D) semiconductor nanoplatelets (NPLs) with atomically precise thickness have attracted much research interest due to their inherent photo-physical properties. In this work, we have synthesized 2D Cu-doped CdS NPLs, investigated the charge transfer dynamics using ultrafast transient absorption spectroscopy, and fabricated an efficient photodetector device. A large Stoke's shifted emission at ~685 nm with an average lifetime of about ~1.45 μs is observed in Cu-doped CdS NPLs. Slower bleach recovery kinetics leads to large charge carrier separation in Cu-doped NPLs which is beneficial for photodetector applications. Cu-doped NPLs-based photodetectors exhibit high photocurrent, fast response (~120 ms), ~600 times higher photoresponsivity, and ~300 times higher detectivity (~4.1×1013 Jones) than undoped CdS NPLs. These excellent properties of Cu-doped CdS NPLs make this material an efficient alternative for next-generation optoelectronic devices.

Polyimide-Based Covalent Organic Framework as a Photocurrent Enhancer for Efficient Dye-Sensitized Solar Cells

Covalent organic frameworks (COFs) are of great interest in the energy and optoelectronic fields due to their high porosity, superior thermal stability, and highly ordered conjugated architecture, which are beneficial for charge migration, charge separation, and light harvesting. In this study, polyimide COFs (PI-COFs) are synthesized through the condensation reaction of pyromellitic dianhydride (PMDA) with tris(4-aminophenyl) amine (TAPA) and then doped in the TiO₂ photoelectrode of a dye-sensitized solar cell (DSSC) to co-work with N719 dye to explore their functionality. As a benchmark, the pristine DSSC without the doping of PI-COFs exhibits a power conversion efficiency of 9.05% under simulated one sun illumination. The doping of 0.04 wt % PI-COFs contributes an enhanced short-circuit current density (J_SC) from 17.43 to 19.03 mA/cm², and therefore, the cell efficiency is enhanced to 9.93%. The enhancement of J_SC is attributed to the bifunctionality of PI-COFs, which enhances the charge transfer/injection and suppresses the charge recombination through the host (PI-COF)-guest (N719 dye) interaction. In addition, the PI-COFs also function as a cosensitizer and contribute a small quantity of photoinduced electrons upon sunlight illumination. Surface modification of oxygen plasma improves the hydrophilicity of PI-COF particles and reinforces the heterogeneous linkage between PI-COF and TiO₂ nanoparticles, giving rise to more efficient charge injection. As a result, the champion cell exhibits a high power conversion efficiency of 10.46% with an enhanced J_SC of 19.43 mA/cm². This methodology of increasing solar efficiency by modification of the photoelectrode with the doping of PI-COFs in the TiO₂ nanoparticles is promising in the development of DSSCs.

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 10² A/W and an ultrahigh detectivity of 1.10 × 10¹¹ Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Branched CdO/ZnO Core/Shell Heterogeneous Structure and Its Enhanced Photoelectrocatalytic Performance

Branched nanostructures of semiconductors based on one-dimensional heterostructures have many promising applications in optoelectronics, supercapacitors, photocatalysts, etc. Here, we report a novel branched core/shell CdO/ZnO hetero-nanostructure that resembles a Crimson bottlebrush (Callistemon Citrinus) but with intriguing hexagonal symmetry. The nanomaterials were fabricated via an improved one-step chemical vapor deposition method and consist of a CdO wire as the core and ZnO as the shell. With cadmium acting as a catalyst, ZnO nanowires grow as perpendicular branches from the CdO/ZnO one-dimensional core/shell structure. The nanostructures were characterized with X-ray diffraction scanning and transmission electron microscopy. A homogeneous epitaxial growth mechanism has been postulated for the formation of the nanostructure. The materials show a broad and strong absorption ranging from visible to ultraviolet and a better photoelectrocatalytic properties in comparison to pure ZnO or CdO. Our synthetic strategy may open up a new way for controlled preparation of one-dimensional nanomaterials with core/shell heterostructure, which could find potential applications in solar cells and opto-electrochemical water-splitting devices.

Flexible small-channel thin-film transistors by electrohydrodynamic lithography

Small-channel organic thin-film transistors (OTFTs) are an essential component of microelectronic devices. With the advent of flexible electronics, the fabrication of OTFTs still faces numerous hurdles in the realization of highly-functional, devices of commercial value. Herein, a concise and efficient procedure is proposed for the fabrication of flexible, small-channel organic thin-film transistor (OTFT) arrays on large-area substrates that circumvents the use of photolithography. By employing a low-cost and high-resolution mechano-electrospinning technology, large-scale micro/nanofiber-based patterns can be digitally printed on flexible substrates (Si wafer or plastic), which can act as the channel mask of TFT instead of a photolithography reticle. The dimensions of the micro/nanochannel can be manipulated by tuning the processing parameters such as the nozzle-to-substrate distance, applied voltage, and fluid supply. The devices exhibit excellent electrical properties with high mobilities (∼0.62 cm² V^-1 s^-1) and high on/off current ratios (∼2.47 × 10⁶), and they are able to maintain stability upon being bent from 25 mm to 2.75 mm (bending radius) over 120 testing cycles. This electrohydrodynamic lithography-based approach is a digital, programmable, and reliable alternative for easily fabricating flexible, small-channel OTFTs, which can be integrated into flexible and wearable devices.

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I_on/I_off ratio of 4.91 × 10³, a high photoconductive gain of 1.10 × 10³, a high detectivity of 1.65 × 10¹³ Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm^-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Dielectrophoretic-Assembled Single and Parallel-Aligned Ag Nanowire-ZnO-Branched Nanorod Heteronanowire Ultraviolet Photodetectors

The branched hierarchical heteronanowires have been widely studied for optoelectronics application because of their unique electronic and photonic performances. Here, we successfully synthesized Ag nanowire-ZnO-branched nanorod heteronanowires based on an improved hydrothermal method. Then we fabricated single heteronanowire across a Au electrode pair with different gap widths and parallel-aligned heteronanowires on a Au interdigitated electrode with a dielectrophoresis method, indicating the flexibility and operability of the dielectrophoresis assembly method. Increased photocurrent and shortened response time could be obtained by air-annealing and Ar-plasma post-treatments. A large responsivity of 2.5 A W^-1 and a linear dynamic range of 74 dB could be obtained, indicating stable responsivity for both weak and strong illumination. The excellent photoresponse performance is attributed to the structure superiority of heteronanowires. The proposed strategy of dielectrophoresis-assembled heteronanowires provides a new opportunity to design and fabricate hierarchical nanostructure photodetectors.

ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn₂SnO₄ nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10⁴), specific detectivity (up to 9.0 × 10¹⁷ Jones), photoconductive gain (up to 1.1 × 10⁷), fast response, and excellent stability. Compared with a pristine Zn₂SnO₄ nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn₂SnO₄ nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn₂SnO₄ nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films

This work highlights the transport properties of undoped and Ag doped nc-CdS thin films for optoelectronic devices.

Cu2ZnSnS4 Nanoparticle Sensitized Metal-Organic Framework Derived Mesoporous TiO2 as Photoanodes for High-Performance Dye-Sensitized Solar Cells

We present a facile hot injection and hydrothermal method to synthesize Cu2ZnSnS4 (CZTS) nanoparticles sensitized metal-organic frameworks (MOFs)-derived mesoporous TiO2. The MOFs-derived TiO2 inherits the large specific surface area and abundantly porous structures of the MOFs structure, which is of great benefit to effectively enhance the dye loading capacity, prolong the incident light traveling length by enhancing the multiple interparticle light-scattering process, and therefore improve the light absorption capacity. The sensitization of CZTS nanoparticles effectively enlarges the photoresponse range of TiO2 to the visible light region and facilitates photoinduced carrier transport. The formed heterostructure between CZTS nanoparticles and MOFs-derived TiO2 with matched band gap structure effectively suppresses the recombination rates of photogenerated electron/hole pairs and prolongs the lifespan of the carriers. Photoanodes based upon CZTS/MOFs-derived TiO2 photoanodes can achieve the maximal photocurrent of 17.27 mA cm(-2) and photoelectric conversion performance of 8.10%, nearly 1.93 and 2.21 times higher than those of TiO2-based photoanode. The related mechanism and model are investigated. The strikingly improved photoelectric properties are ascribed to a synergistic action between the MOFs-derived TiO2 and the sensitization of CZTS nanoparticles.

A highly sensitive flexible SnS thin film photodetector in the ultraviolet to near infrared prepared by chemical bath deposition

A novel flexible broad band UV-vis-NIR SnS photodetector with high photosensitivity and fast response time for scientific and industrial applications.

An interfacial defect-controlled ZnO/PbS QDs/ZnS heterostructure based broadband photodetector

High performance broadband photodetection achieved by suitable surface and interface defects modulations.