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Talha-Dean T, Tarn Y, Mukherjee S, John JW, Huang D, Verzhbitskiy IA, Venkatakrishnarao D, Das S, Lee R, Mishra A, Wang S, Ang YS, Johnson Goh KE, Lau CS. Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31738-31746. [PMID: 38843175 DOI: 10.1021/acsami.4c03639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
Assembling two-dimensional van der Waals (vdW)-layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena. vdW heterostructures also offer possibilities for designer device applications in areas such as optoelectronics, valley- and spintronics, and quantum technology. However, realizing the full potential of these heterostructures requires interfaces with exceptionally low disorder which is challenging to engineer. Here, we show that thermal scanning probes can be used to create pristine interfaces in vdW heterostructures. Our approach is compatible at both the material- and device levels, and monolayer WS2 transistors show up to an order of magnitude improvement in electrical performance from this technique. We also demonstrate vdW heterostructures with low interface disorder enabling the electrical formation and control of quantum dots that can be tuned from macroscopic current flow to the single-electron tunneling regime.
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Affiliation(s)
- Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, U.K
| | - Yaoju Tarn
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Subhrajit Mukherjee
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - John Wellington John
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Rainer Lee
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Abhishek Mishra
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Shuhua Wang
- Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yee Sin Ang
- Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
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2
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Xia Y, Cai D, Gao J, Li P, Xie K, Liu Y, Gu Y, Yu G, Cui P, Qin S. Coulomb blockade and Coulomb staircases in CoBi nanoislands on SrTiO 3(001). NANOTECHNOLOGY 2024; 35:295601. [PMID: 38154130 DOI: 10.1088/1361-6528/ad1943] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2023] [Accepted: 12/27/2023] [Indexed: 12/30/2023]
Abstract
We successfully fabricated two-dimensional metallic CoBi nanoislands on SrTiO3(001) substrate by molecular beam epitaxy, and systematically investigated their electronic structures by scanning tunneling microscopy and spectroscopyin situat 4.2 K. Coulomb blockade and Coulomb staircases with discrete and well-separated levels are observed for the individual nanoisland, which is attributed to single-electron tunneling via two tunnel junction barriers. They are in excellent agreement with the simulations based on orthodox theory. Furthermore, we demonstrated that the Coulomb blockade becomes weaker with increasing temperature and almost disappears at ∼22 K in our variable temperature experiment, and its full-width at half-maximum of dI/dVpeaks with temperature is ∼6 mV. Our results provide a new platform for designing single-electron transistors that have potential applications in future microelectronics.
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Affiliation(s)
- Yumin Xia
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Desheng Cai
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Jiaqing Gao
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Pengju Li
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Kun Xie
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Yuzhou Liu
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Yitong Gu
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Gan Yu
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, People's Republic of China
| | - Shengyong Qin
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, People's Republic of China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, People's Republic of China
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3
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Kumar P, Kim H, Tripathy S, Watanabe K, Taniguchi T, Novoselov KS, Kotekar-Patil D. Excited state spectroscopy and spin splitting in single layer MoS 2 quantum dots. NANOSCALE 2023; 15:18203-18211. [PMID: 37920920 DOI: 10.1039/d3nr03844k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of the Landé g-factor, which can be measured by exploiting the discrete energy spectrum on a quantum dot. However, the quantum dots realized in TMDCs are yet to reach the required control and quality for reliable measurement of excited state spectroscopy and the g-factor, particularly in atomically thin layers. Quantum dot sizes reported in TMDCs so far are not small enough to observe discrete energy levels on them. Here, we report on electron transport through discrete energy levels of quantum dots in a single layer MoS2 isolated from its environment using a dual gate geometry. The quantum dot energy levels are separated by a few (5-6) meV such that the ground state and the first excited state transitions are clearly visible, thanks to the low contact resistance of ∼700 Ω and relatively low gate voltages. This well-resolved energy separation allowed us to accurately measure the ground state g-factor of ∼5 in MoS2 quantum dots. We observed a spin-filling sequence in our quantum dots under a perpendicular magnetic field. Such a system offers an excellent testbed to measure the key parameters for evaluation and implementation of spin-valley qubits in TMDCs, thus accelerating the development of quantum systems in two-dimensional semiconducting TMDCs.
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Affiliation(s)
- P Kumar
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, 119077, Singapore
| | - H Kim
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634, Singapore.
| | - S Tripathy
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634, Singapore.
| | - K Watanabe
- Research Center for Functional Materials, National Institute for Materials, Science, Tsukuba, 305-0044, Japan
| | - T Taniguchi
- Research Center for Functional Materials, National Institute for Materials, Science, Tsukuba, 305-0044, Japan
| | - K S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, 119077, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
| | - D Kotekar-Patil
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634, Singapore.
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4
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Schock RTK, Neuwald J, Möckel W, Kronseder M, Pirker L, Remškar M, Hüttel AK. Non-Destructive Low-Temperature Contacts to MoS 2 Nanoribbon and Nanotube Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209333. [PMID: 36624967 DOI: 10.1002/adma.202209333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 12/15/2022] [Indexed: 06/17/2023]
Abstract
Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100 kΩ are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100 mK.
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Affiliation(s)
- Robin T K Schock
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Jonathan Neuwald
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Wolfgang Möckel
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Matthias Kronseder
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Luka Pirker
- Solid State Physics Department, Jožef Stefan Institute, 1000, Ljubljana, Slovenia
- J. Heyrovský Institute of Physical Chemistry, v.v.i., Czech Academy of Sciences, 182 23, Prague, Czech Republic
| | - Maja Remškar
- Solid State Physics Department, Jožef Stefan Institute, 1000, Ljubljana, Slovenia
| | - Andreas K Hüttel
- Institute for Experimental and Applied Physics, University of Regensburg, 93040, Regensburg, Germany
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5
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Bheemireddy V. XNOR-Nets with SETs: Proposal for a binarised convolution processing elements with Single-Electron Transistors. Sci Rep 2022; 12:9953. [PMID: 35705581 PMCID: PMC9200707 DOI: 10.1038/s41598-022-13180-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2022] [Accepted: 05/20/2022] [Indexed: 11/10/2022] Open
Abstract
Deep neural network (DNN) and Convolution neural network (CNN) algorithms have significantly increased the accuracies in cutting-edge large-scale image recognition and natural-language processing tasks. Generally, such neural nets are implemented on power-hungry GPUs, beyond the reach of low-power edge-devices. The binary neural nets have been proposed recently, where both the input activations and weights are constrained to \documentclass[12pt]{minimal}
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\begin{document}$$+$$\end{document}+ 1 and − 1 to address this challenge. Here in the present proof-of-concept study, we propose a simple class of mixed-signal circuits composed of single-electron devices and exploit the nonlinear Coulomb staircase phenomena to alleviate the challenges of binarised deep learning hardware accelerators. In particular, through SPICE modeling, we demonstrate the realisation of space-time-energy efficient XNOR-Accumulation (XAC) operation, reconfigurabilty of XAC circuit to perform 1D convolution and a busbar design to augment a contemporary accelerator. These nanoscale circuits could be readily fabricated and may potentially be deployed in low-power deep-learning systems.
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Affiliation(s)
- Varun Bheemireddy
- Device Modeling Group, James Watt School of Engineering, The University of Glasgow, Glasgow, G12 8QQ, UK.
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6
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Pal A, Zhang S, Chavan T, Agashiwala K, Yeh CH, Cao W, Banerjee K. Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109894. [PMID: 35468661 DOI: 10.1002/adma.202109894] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 04/11/2022] [Indexed: 06/14/2023]
Abstract
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.
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Affiliation(s)
- Arnab Pal
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Shuo Zhang
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
- College of ISEE, Zhejiang University, Hangzhou, 310027, China
| | - Tanmay Chavan
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kunjesh Agashiwala
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Chao-Hui Yeh
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Wei Cao
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kaustav Banerjee
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
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7
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Ghosh Dastidar M, Thekkooden I, Nayak PK, Praveen Bhallamudi V. Quantum emitters and detectors based on 2D van der Waals materials. NANOSCALE 2022; 14:5289-5313. [PMID: 35322836 DOI: 10.1039/d1nr08193d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.
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Affiliation(s)
- Madhura Ghosh Dastidar
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Immanuel Thekkooden
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pramoda K Nayak
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Vidya Praveen Bhallamudi
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
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8
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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9
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Li X, Li B, Lei J, Bets KV, Sang X, Okogbue E, Liu Y, Unocic RR, Yakobson BI, Hone J, Harutyunyan AR. Nickel particle-enabled width-controlled growth of bilayer molybdenum disulfide nanoribbons. SCIENCE ADVANCES 2021; 7:eabk1892. [PMID: 34890223 PMCID: PMC8664269 DOI: 10.1126/sciadv.abk1892] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2021] [Accepted: 10/25/2021] [Indexed: 05/19/2023]
Abstract
Transition metal dichalcogenides exhibit a variety of electronic behaviors depending on the number of layers and width. Therefore, developing facile methods for their controllable synthesis is of central importance. We found that nickel nanoparticles promote both heterogeneous nucleation of the first layer of molybdenum disulfide and simultaneously catalyzes homoepitaxial tip growth of a second layer via a vapor-liquid-solid (VLS) mechanism, resulting in bilayer nanoribbons with width controlled by the nanoparticle diameter. Simulations further confirm the VLS growth mechanism toward nanoribbons and its orders of magnitude higher growth speed compared to the conventional noncatalytic growth of flakes. Width-dependent Coulomb blockade oscillation observed in the transfer characteristics of the nanoribbons at temperatures up to 60 K evidences the value of this proposed synthesis strategy for future nanoelectronics.
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Affiliation(s)
- Xufan Li
- Honda Research Institute USA Inc., San Jose, CA 95134, USA
| | - Baichang Li
- Mechanical Engineering Department, Columbia University, New York, NY 10025, USA
| | - Jincheng Lei
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, USA
| | - Ksenia V. Bets
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, USA
| | - Xiahan Sang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | | | - Yang Liu
- Mechanical Engineering Department, Columbia University, New York, NY 10025, USA
| | - Raymond R. Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Boris I. Yakobson
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, USA
| | - James Hone
- Mechanical Engineering Department, Columbia University, New York, NY 10025, USA
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10
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Remskar M, Hüttel AK, Shubina TV, Seabaugh A, Fathipour S, Lawrowski R, Schreiner R. Confinement Related Phenomena in MoS
2
Tubular Structures Grown from Vapour Phase. Isr J Chem 2021. [DOI: 10.1002/ijch.202100100] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Maja Remskar
- Jozef Stefan Institute Jamova 39 1000 Ljubljana Slovenia
- Faculty of Mathematics and Physics University of Ljubljana Jadranska Cesta 19 1000 Ljubljana Slovenia
| | - Andreas K. Hüttel
- Institute for Experimental and Applied Physics University of Regensburg 93040 Regensburg Germany
| | | | - Alan Seabaugh
- Department of Electrical Engineering University of Notre Dame Notre Dame Indiana 46556 USA
| | - Sara Fathipour
- Department of Electrical Engineering University of Notre Dame Notre Dame Indiana 46556 USA
| | - Robert Lawrowski
- OTH Regensburg Fakultät ANK Seybothstr. 2 93053 Regensburg Germany
| | - Rupert Schreiner
- OTH Regensburg Fakultät ANK Seybothstr. 2 93053 Regensburg Germany
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11
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Jarschel P, Kim JH, Biadala L, Berthe M, Lambert Y, Osgood RM, Patriarche G, Grandidier B, Xu J. Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations. ACS APPLIED MATERIALS & INTERFACES 2021; 13:38450-38457. [PMID: 34357748 DOI: 10.1021/acsami.1c06096] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Power consumption, thermal management, and wiring challenge of the binary serial architecture drive the search for alternative paradigms to computing. Of special interest is neuromorphic computing, in which materials and device structures are designed to mimic neuronal functionalities with energy-efficient non-linear responses and both short- and long-term plasticities. In this work, we explore and report on the enabling potential of single-electron tunneling (SET) in PbS nanoplatelets epitaxially grown in the liquid phase on InP, which present these key features. By extrapolating the experimental data in the SET regime, we predict and model synaptic operations. The low-energy (<fJ), high-speed (MHz) operation and scalable fabrication process of the PbS/InP nanoplatelets make such a nanoscale system attractive as neuromorphic computing building blocks.
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Affiliation(s)
- Paulo Jarschel
- School of Engineering, Brown University, Providence 02912, Rhode Island, United States
- Photonics Research Center, University of Campinas, Campinas 13083-859, São Paulo, Brazil
- Quantum Electronics Department, Gleb Wataghin Physics Institute, University of Campinas, Campinas 13083-859, São Paulo, Brazil
| | - Jin Ho Kim
- School of Engineering, Brown University, Providence 02912, Rhode Island, United States
| | - Louis Biadala
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Maxime Berthe
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Yannick Lambert
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Richard M Osgood
- US Army Combat Capabilities Development Command-Soldier Center, 15 General Greene Avenue, Natick, Massachusetts 01760, United States
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, University Paris-Saclay, Avenue de la Vauve, Palaiseau 91120, France
| | - Bruno Grandidier
- University of Lille, CNRS, Centrale Lille, University of Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, Lille 59000, France
| | - Jimmy Xu
- School of Engineering, Brown University, Providence 02912, Rhode Island, United States
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12
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Shrivastava M, Ramgopal Rao V. A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges. NANO LETTERS 2021; 21:6359-6381. [PMID: 34342450 DOI: 10.1021/acs.nanolett.1c00729] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This Mini Review attempts to establish a roadmap for two-dimensional (2D) material-based microelectronic technologies for future/disruptive applications with a vision for the semiconductor industry to enable a universal technology platform for heterogeneous integration. The heterogeneous integration would involve integrating orthogonal capabilities, such as different forms of computing (classical, neuromorphic, and quantum), all forms of sensing, digital and analog memories, energy harvesting, and so forth, all in a single chip using a universal technology platform. We have reviewed the state-of-the-art 2D materials such as graphene, transition metal dichalcogenides, phosphorene and hexagonal boron nitride, and so forth, and how they offer unique possibilities for a range of futuristic/disruptive applications. Besides, we have discussed the technological and fundamental challenges in enabling such a universal technology platform, where the world stands today, and what gaps are required to be filled.
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Affiliation(s)
- Mayank Shrivastava
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - V Ramgopal Rao
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 40076, India
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13
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Kim BK, Choi DH, Yu BS, Kim M, Watanabe K, Taniguchi T, Kim JJ, Bae MH. Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS 2. NANOTECHNOLOGY 2021; 32:195207. [PMID: 33530078 DOI: 10.1088/1361-6528/abe262] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We demonstrate a gate-tunable quantum dot (QD) located between two potential barriers defined in a few-layer MoS2. Although both local gates used to tune the potential barriers have disorder-induced QDs, we observe diagonal current stripes in current resonant islands formed by the alignment of the Fermi levels of the electrodes and the energy levels of the disorder-induced QDs, as evidence of the gate-tunable QD. We demonstrate that the charging energy of the designed QD can be tuned in the range of 2-6 meV by changing the local-gate voltages in ∼1 V.
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Affiliation(s)
- Bum-Kyu Kim
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
| | - Dong-Hwan Choi
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
- Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Byung-Sung Yu
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
- Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Minsoo Kim
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Ju-Jin Kim
- Department of Physics, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Myung-Ho Bae
- Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
- Department of Nano Science, University of Science and Technology, Daejeon, 34113, Republic of Korea
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14
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Russ M, Péterfalvi CG, Burkard G. Theory of valley-resolved spectroscopy of a Si triple quantum dot coupled to a microwave resonator. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:165301. [PMID: 31829981 DOI: 10.1088/1361-648x/ab613f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We theoretically study a silicon triple quantum dot (TQD) system coupled to a superconducting microwave resonator. The response signal of an injected probe signal can be used to extract information about the level structure by measuring the transmission and phase shift of the output field. This information can further be used to gain knowledge about the valley splittings and valley phases in the individual dots. Since relevant valley states are typically split by several [Formula: see text], a finite temperature or an applied external bias voltage is required to populate energetically excited states. The theoretical methods in this paper include a capacitor model to fit experimental charging energies, an extended Hubbard model to describe the tunneling dynamics, a rate equation model to find the occupation probabilities, and an input-output model to determine the response signal of the resonator.
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15
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Graphene and two-dimensional materials for silicon technology. Nature 2019; 573:507-518. [PMID: 31554977 DOI: 10.1038/s41586-019-1573-9] [Citation(s) in RCA: 434] [Impact Index Per Article: 86.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2018] [Accepted: 07/08/2019] [Indexed: 11/09/2022]
Abstract
The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.
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16
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Carrier control in 2D transition metal dichalcogenides with Al 2O 3 dielectric. Sci Rep 2019; 9:8769. [PMID: 31217503 PMCID: PMC6584693 DOI: 10.1038/s41598-019-45392-9] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2019] [Accepted: 06/05/2019] [Indexed: 11/28/2022] Open
Abstract
We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.
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17
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Jiang Z, Gao YF, He L, Sun JP, Song H, Wang Q. Manipulation of pseudo-spin guiding and flat bands for topological edge states. Phys Chem Chem Phys 2019; 21:11367-11375. [PMID: 31111137 DOI: 10.1039/c9cp00789j] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Topological edge states and pseudo spins are promising paradigms to explore a new phase of matter in condensed matter physics. Here, we reveal the regulatory mechanism for guiding pseudo spin states along the interface between trivial and topological regions with elliptic cylinders made of conventional silicon material. A spin-guiding path introduced by an arrangement of elliptic cylinders exhibits high efficiency, large operation bandwidth and robustness to imperfections with tunable parameters. The pseudo spins of four types of silicon-based unit cells are measured, which may open exciting possibilities for unexpected topological properties such as flat bands. We manipulate a wide flat band with near-zero group velocities, which excites both pseudo spin up and down modes at the interface. The proposed concept might be implemented in photonic fabrication, facilitating potential applications for integrated optical devices.
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Affiliation(s)
- Zhen Jiang
- School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China.
| | - Yong-Feng Gao
- School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China.
| | - Liu He
- School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China.
| | - Jia-Ping Sun
- School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China.
| | - He Song
- School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China.
| | - Quan Wang
- School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China. and State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050, China
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18
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Epping A, Banszerus L, Güttinger J, Krückeberg L, Watanabe K, Taniguchi T, Hassler F, Beschoten B, Stampfer C. Quantum transport through MoS 2 constrictions defined by photodoping. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:205001. [PMID: 29620021 DOI: 10.1088/1361-648x/aabbb8] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We present a device scheme to explore mesoscopic transport through molybdenum disulfide (MoS2) constrictions using photodoping. The devices are based on van-der-Waals heterostructures where few-layer MoS2 flakes are partially encapsulated by hexagonal boron nitride (hBN) and covered by a few-layer graphene flake to fabricate electrical contacts. Since the as-fabricated devices are insulating at low temperatures, we use photo-induced remote doping in the hBN substrate to create free charge carriers in the MoS2 layer. On top of the device, we place additional metal structures, which define the shape of the constriction and act as shadow masks during photodoping of the underlying MoS2/hBN heterostructure. Low temperature two- and four-terminal transport measurements show evidence of quantum confinement effects.
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Affiliation(s)
- Alexander Epping
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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19
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Agarwal A, Vitiello MS, Viti L, Cupolillo A, Politano A. Plasmonics with two-dimensional semiconductors: from basic research to technological applications. NANOSCALE 2018; 10:8938-8946. [PMID: 29741546 DOI: 10.1039/c8nr01395k] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Herein, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with damping processes dominated by intraband rather than interband transitions, unlike graphene. Spin-orbit coupling strongly affects the plasmonic spectrum of buckled honeycomb lattices (silicene and germanene), while the anisotropic lattice of phosphorene determines different propagation of plasmons along the armchair and zigzag directions. Black phosphorus is also a suitable material for ultrafast plasmonics, for which the active plasmonic response can be initiated by photoexcitation with femtosecond pulses. We also review existing applications of plasmonics with two-dimensional materials in the fields of thermoplasmonics, biosensing, and plasma-wave Terahertz detection. Finally, we consider the capabilities of van der Waals heterostructures for innovative low-loss plasmonic devices.
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Affiliation(s)
- Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, 208016, Kanpur, India.
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20
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Sierra MA, Sánchez D, Garrigues AR, Del Barco E, Wang L, Nijhuis CA. How to distinguish between interacting and noninteracting molecules in tunnel junctions. NANOSCALE 2018; 10:3904-3910. [PMID: 29423488 DOI: 10.1039/c7nr05739c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recent experiments demonstrate a temperature control of the electric conduction through a ferrocene-based molecular junction. Here we examine the results in view of determining means to distinguish between transport through single-particle molecular levels or via transport channels split by Coulomb repulsion. Both transport mechanisms are similar in molecular junctions given the similarities between molecular intralevel energies and the charging energy. We propose an experimentally testable way to identify the main transport process. By applying a magnetic field to the molecule, we observe that an interacting theory predicts a shift of the conductance resonances of the molecule whereas in the noninteracting case each resonance is split into two peaks. The interaction model works well in explaining our experimental results obtained in a ferrocene-based single-molecule junction, where the charge degeneracy peaks shift (but do not split) under the action of an applied 7-Tesla magnetic field. This method is useful for a proper characterization of the transport properties of molecular tunnel junctions.
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Affiliation(s)
- Miguel A Sierra
- Institute for Cross-Disciplinary Physics and Complex Systems IFISC (UIB-CSIC), Palma de Mallorca, Spain.
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21
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Wang K, De Greve K, Jauregui LA, Sushko A, High A, Zhou Y, Scuri G, Taniguchi T, Watanabe K, Lukin MD, Park H, Kim P. Electrical control of charged carriers and excitons in atomically thin materials. NATURE NANOTECHNOLOGY 2018; 13:128-132. [PMID: 29335564 DOI: 10.1038/s41565-017-0030-x] [Citation(s) in RCA: 56] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2016] [Accepted: 11/15/2017] [Indexed: 06/07/2023]
Abstract
Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits 8 . 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.
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Affiliation(s)
- Ke Wang
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Kristiaan De Greve
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Luis A Jauregui
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Andrey Sushko
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Alexander High
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - You Zhou
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Giovanni Scuri
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Ibaraki, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Ibaraki, Japan
| | - Mikhail D Lukin
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Hongkun Park
- Department of Physics, Harvard University, Cambridge, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, MA, USA.
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22
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Tanaka H, Iizuka H, Pershin YV, Ventra MD. Surface effects on ionic Coulomb blockade in nanometer-size pores. NANOTECHNOLOGY 2018; 29:025703. [PMID: 29130892 DOI: 10.1088/1361-6528/aa9a14] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate this phenomenon extensively using all-atom molecular dynamics of ionic transport through nanopores of about one nanometer in diameter and up to several nanometers in length. Our goal is to better understand the role of atomic roughness and structure of the pore walls in the ionic Coulomb blockade. Our numerical results reveal the following general trends. First, the nanopore selectivity changes with its diameter, and the nanopore position in the membrane influences the current strength. Second, the ionic transport through the nanopore takes place in a hopping-like fashion over a set of discretized states caused by local electric fields due to membrane atoms. In some cases, this creates a slow-varying 'crystal-like' structure of ions inside the nanopore. Third, while at a given voltage, the resistance of the nanopore depends on its length, the slope of this dependence appears to be independent of the molarity of ions. An effective kinetic model that captures the ionic Coulomb blockade behavior observed in MD simulations is formulated.
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Affiliation(s)
- Hiroya Tanaka
- Toyota Central Research & Development Labs. Inc., Nagakute, Aichi 480 1192, Japan
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23
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Zhang ZZ, Song XX, Luo G, Deng GW, Mosallanejad V, Taniguchi T, Watanabe K, Li HO, Cao G, Guo GC, Nori F, Guo GP. Electrotunable artificial molecules based on van der Waals heterostructures. SCIENCE ADVANCES 2017; 3:e1701699. [PMID: 29062893 PMCID: PMC5650488 DOI: 10.1126/sciadv.1701699] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2017] [Accepted: 09/25/2017] [Indexed: 06/02/2023]
Abstract
Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.
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Affiliation(s)
- Zhuo-Zhi Zhang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiang-Xiang Song
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Gang Luo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Guang-Wei Deng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Vahid Mosallanejad
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Gang Cao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Franco Nori
- CEMS, RIKEN, Wako-shi, Saitama 351-0198, Japan
- Department of Physics, University of Michigan, Ann Arbor, MI 48109–1040, USA
| | - Guo-Ping Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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24
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Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device. Sci Rep 2017; 7:11065. [PMID: 28894172 PMCID: PMC5593999 DOI: 10.1038/s41598-017-11393-9] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2017] [Accepted: 08/23/2017] [Indexed: 11/08/2022] Open
Abstract
High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 104, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.
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25
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Sharma CH, Thalakulam M. Split-gated point-contact for electrostatic confinement of transport in MoS 2/h-BN hybrid structures. Sci Rep 2017; 7:735. [PMID: 28389673 PMCID: PMC5429712 DOI: 10.1038/s41598-017-00857-7] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2016] [Accepted: 03/15/2017] [Indexed: 12/03/2022] Open
Abstract
Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature, van der Waals heterostructures hold the advantage of large-scale uniformity, flexibility and portability over the conventional bulk semiconductor heterostructures. In this letter we show the operation of a split-gate defined point contact device on a MoS2/h-BN heterostructure, the first step towards realizing electrostatically gated quantum circuits on van der Waals semiconductors. By controlling the voltage on the split-gate we are able to control and confine the electron flow in the device leading to the formation of the point contact. The formation of the point contact in our device is elucidated by the three characteristic regimes observed in the pinch-off curve; transport similar to the conventional FET, electrostatically confined transport and the tunneling dominated transport. We explore the role of the carrier concentration and the drain-source voltages on the pinch-off characteristics. We are able to tune the pinch-off characteristics by varying the back-gate voltage at temperatures ranging from 4 K to 300 K.
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Affiliation(s)
- Chithra H Sharma
- School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram, 695016, Kerala, India
| | - Madhu Thalakulam
- School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram, 695016, Kerala, India.
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26
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Wei W, Dai Y, Huang B. In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures. Phys Chem Chem Phys 2016; 18:15632-8. [DOI: 10.1039/c6cp02741e] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Two-dimensional TMD in-plane heterostructures demonstrate true type-II band alignment and the built-in electric field makes the defect states consecutive.
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Affiliation(s)
- Wei Wei
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Ying Dai
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Baibiao Huang
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
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