Spectra-selective PbS quantum dot infrared photodetectors

Synthesis and application of quantum dots in detection of environmental contaminants in food: A comprehensive review

Environmental pollutants can accumulate in the human body through the food chain, which may seriously impact human health. Therefore, it is of vital importance to develop quick, simple, accurate and sensitive (respond quickly) technologies to evaluate the concentration of environmental pollutants in food. Quantum dots (QDs)-based fluorescence detection methods have great potential to overcome the shortcomings of traditional detection methods, such as long detection time, cumbersome detection procedures, and low sensitivity. This paper reviews the types and synthesis methods of QDs with a focus on green synthesis and the research progress on rapid detection of environmental pollutants (e.g., heavy metals, pesticides, and antibiotics) in food. Metal-based QDs, carbon-based QDs, and "top-down" and "bottom-up" synthesis methods are discussed in detail. In addition, research progress of QDs in detecting different environmental pollutants in food is discussed, especially, the practical application of these methods is analyzed. Finally, current challenges and future research directions of QDs-based detection technologies are critically discussed. Hydrothermal synthesis of carbon-based QDs with low toxicity from natural materials has a promising future. Research is needed on green synthesis of QDs, direct detection without pre-processing, and simultaneous detection of multiple contaminants. Finally, how to keep the mobile sensor stable, sensitive and easy to store is a hot topic in the future.

Fast Near-Infrared Photodetection Using III-V Colloidal Quantum Dots

Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II-VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III-Vs-if their surface chemistry can be mastered-offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm² V^-1 s^-1 ) with a 4× reduction in permittivity compared to PbS CQDs. The resulting photodiodes achieve a response time faster than 2 ns-the fastest photodiode among previously reported CQD photodiodes-combined with an external quantum efficiency (EQE) of 30% at 940 nm.

Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga₂O₃, SnO₂, TiO₂, and WO₃ are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI₂). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.

A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity

Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQD silicon-based photodetectors can detect spectrally selective light sources. This is attributed to two layers with specific functions, a filter layer on top and a photosensitive layer in contact with the silicon channel. Each of the target sources of the device has a selectivity factor of more than 10 against non-target sources. The s-PD (selective photodetector) has three significant advantages: the ability to tunably adjust the detectable spectral range by easily adjusting the size of QDs. The second is using a new architecture to achieve a high-performance selective photodetector, and finally, the ease-of-integration with silicon. The above features enable the device to meet the needs of particular fields such as secure communication, surveillance, and infrared imaging.

Enhanced Passivation and Carrier Collection in Ink-Processed PbS Quantum Dot Solar Cells via a Supplementary Ligand Strategy

Solution-processed semiconductors have opened promising avenues for next-generation semiconductor and optoelectronic industries. Colloidal quantum dots (QDs) as one of the most typical materials are widely utilized for the design and development of light-emitting diodes, photodetectors, and solar cells. Recently, an emerging process of PbS QD ink has been employed to attain world record power conversion efficiency by surface passivation using a PbI₂ ligand to form PbI₂-PbS and the process optimization in the field of photovoltaics. However, the bonding and debonding of the ligands on the surface of PbS QDs are dynamic reversible processes in an ink environment. The uncoordinated Pb²⁺ defects induced by unbonded PbS QDs serve as the recombination sites. Thus, the present ink process leaves much room for the enhancement by surface passivation of PbS QDs. Herein, we devise an efficient strategy with a supplementary phenethylammonium iodide (PEAI) ligand for the formation of the PEAI-PbS interface in PbS QD ink-processed solar cells. This newly developed method can not only improve the passivation on the QD surface by iodine ions but also simultaneously enhance the carrier collection efficiency by a graded energy alignment between PbI₂-PbS and PEAI-PbS layers. The corresponding power conversion efficiency of the optimized device has significantly increased by approximately 20% more than the control device. As a result, such a robust and efficient method regarded as a strategic candidate can overcome the bottleneck of imperfect passivation caused by a large specific surface area and loose bonding ligands, eventually promoting the industrial application of QDs.

Narrowband colloidal quantum dot photodetectors for wavelength measurement applications

High performance photodetectors based on colloidal quantum dots have been demonstrated in a wide spectral range spanning from the visible to the mid infrared. Quantum dot photodetectors typically show a low-pass type spectral response with a tunable cutoff wavelength. In this paper, we propose a method for the realization of narrowband photodetectors based on the combination of photoconductors and optical filters, both realized with colloidal PbS quantum dots. We demonstrate that an array of such narrowband photodetectors can be effectively employed for the realization of a compact wavemeter operating in the visible and near-infrared spectral range.

Quantum-Dot Tandem Solar Cells Based on a Solution-Processed Nanoparticle Intermediate Layer

Tandem cells are one of the most effective ways of breaking the single junction Shockley-Queisser limit. Solution-processable phosphate-buffered saline (PbS) quantum dots are good candidates for producing multiple junction solar cells because of their size-tunable band gap. The intermediate recombination layer (RL) connecting the subcells in a tandem solar cell is crucial for device performance because it determines the charge recombination efficiency and electrical resistance. In this work, a solution-processed ultrathin NiO and Ag nanoparticle film serves as an intermediate layer to enhance the charge recombination efficiency in PbS QD dual-junction tandem solar cells. The champion devices with device architecture of indium tin oxide/S-ZnO/1.45 eV PbS-PbI₂/PbS-EDT/NiO/Ag NP/ZnO NP/1.22 eV PbS-PbI₂/PbS-EDT/Au deliver a 7.1% power conversion efficiency, which outperforms the optimized reference subcells. This result underscores the critical role of an appropriate nanocrystalline RL in producing high-performance solution-processed PbS QD tandem cells.

Toward Broadband Imaging: Surface-Engineered PbS Quantum Dot/Perovskite Composite Integrated Ultrasensitive Photodetectors

PbS colloidal quantum dots passivated by the thiocyanate anion (SCN^-) are developed to combine with perovskite (CH₃NH₃PbI₃) as building blocks for UV-vis-NIR broadband photodetectors. Both high electrical conductivity and appropriate energy-level alignment are obtained by the in situ ligand exchange with SCN^-. The PbS-SCN/CH₃NH₃PbI₃ composite photodetectors are sensitive to a broad wavelength range covering the UV-vis-NIR region (365-1550 nm), possessing an excellent responsivity of 255 A W^-1 at 365 nm and 1.58 A W^-1 at 940 nm, remarkably high detectivity of 4.9 × 10¹³ Jones at 365 nm and 3.0 × 10¹¹ Jones at 940 nm, and fast response time of ≤42 ms. Furthermore, a 10 × 10 photodetector array is fabricated and integrated, which constitutes a high-performance broadband image sensor. Our approach paves a way for the development of highly sensitive broadband photodetectors/imagers that can be easily integrated.

Acceptor-free photomultiplication-type organic photodetectors

A series of organic photodetectors (OPDs) is prepared with two donor materials as active layers, with the only difference being the weight ratio of the two donors (one polymer and one small molecule). The OPDs work according to a photodiode model with an external quantum efficiency (EQE) of less than 10% at -10 V when the weight ratio of the two materials is 1 : 1 (wt/wt). The EQE of an OPD with P3HT:DRCN5T (100 : 2, wt/wt) as the active layer reaches 1400% at -10 V, exhibiting the photomultiplication (PM) phenomenon. The EQE values of PM-type OPDs can be markedly improved along with a bias increase, and the champion EQE reaches 10 600% at -20 V. The small number of small molecules can be used as electron traps due to the different lowest unoccupied molecular orbital (LUMO) levels of the two donors, and photogenerated electrons can be trapped in the small molecules surrounded by P3HT. The trapped electrons near the Al electrode can induce interfacial band bending for efficient hole tunneling injection from an external circuit. This work provides a new strategy for realizing acceptor-free PM-type OPDs, which may inspire us to further develop organic electronic devices with single type organic semiconducting materials.

Ultrasensitive Solution-Processed Broadband PbSe Photodetectors through Photomultiplication Effect

Broadband photodetectors have important applications in both scientific and industrial sectors. In this study, we report room-temperature-operated solution-processed photodetectors by PbSe quantum dots (QDs) with spectral response from 350 to 2500 nm. In order to boost both external quantum efficiency (EQE) and projected detectivity ( D*), the hole-trap-assisted photomultiplication effect through the EDT-PbSe QD/TABI PbSe QD double-thin-layer thin film, where EDT-PbSe QDs are 1,2-ethanedithiol (EDT)-capped PbSe QDs and TABI-PbSe QDs are tetrabutylammonium (TABI)-capped PbSe QDs, is applied. To further enhance D*, a thin layer of the conjugated polyelectrolyte, which offers significant hole injection resistance for suppressing dark current but enhancing photocurrent under illumination due to the photoinduced self-doping process, is applied for reengineering the electron extraction layer in PbSe QD-based photodetectors. As a result, at room temperature, PbSe QD-based photodetectors exhibit over 450% EQE and over ∼10¹² Jones D* in the visible region and over 120% EQE and D* ∼4 × 10¹¹ Jones in the infrared region. These results demonstrate that our studies provide a simple approach to realize room-temperature-operated solution-processed broadband photodetectors.

On-chip colloidal quantum dot devices with a CMOS compatible architecture for near-infrared light sensing

Solution-processed semiconductors that exhibit tunable light absorption and can be directly integrated into state-of-the-art silicon technologies are attractive for near-infrared (NIR) light detection in applications of medical imaging, night vision cameras, hyperspectral sensing, etc. Colloidal quantum dot (CQD) is regarded as a promising candidate for its solution-processability and superior optoelectronic properties. Here we propose an on-chip CQD photodetector, photodiode-oxide-semiconductor field-effect transistor, for NIR light sensing. This CMOS compatible device architecture utilizes silicon as a channel for carrier transport and PbS CQD as the light absorbing material controlling the channel conductivity. While the light with a wavelength longer than about 1100 nm cannot excite a photocurrent in commercial silicon-based photodetectors due to the absorption cutoff of silicon, the proposed photodetector can have responses owing to the usage of a PbS CQD photodiode. Simulations showed that the photodiode could provide photovoltage to the semiconductor, forming an inversion layer at the oxide-semiconductor interface, and the electron density at the interface is significantly enhanced. As a result, currents could flow through this layer with ease between the source and drain electrodes. For a proof-of-concept demonstration, we experimentally connected a CQD photodiode with a commercial silicon transistor and proved that the current from the transistor could be increased by photovoltage provided by the photodiode under NIR light illumination. The device shows a responsivity of 5.9A/W at the wavelength of 1250 nm.

White light emitting device based on single-phase CdS quantum dots

White light emitting diodes (WLEDs) based on quantum dots (QDs) are emerging as robust candidates for white light sources, however they are suffering from the problem of energy loss resulting from the re-absorption and self-absorption among the employed QDs of different peak wavelengths. It still remains a challenging task to construct WLEDs based on single-phase QD emitters. Here, CdS QDs with short synthesis times are introduced to the fabrication of WLEDs. With a short synthesis time, on one hand, CdS QDs with a small diameter with blue emission can be obtained. On the other hand, surface reconstruction barely has time to occur, and the surface is likely defect-ridden, which enables the existence of a broad emission covering the range of green, yellow and red regions. This is essential for the white light emission of CdS QDs, and is very important for WLED applications. The temporal evolution of the PL spectra for CdS QDs was obtained to investigate the influence of growth time on the luminescent properties. The CdS QDs with a growth time of 0.5 min exhibited a colour rendering index (CRI) of 79.5 and a correlated colour temperature (CCT) of 6238 K. With increasing reaction time, the colour coordinates of the CdS QDs will move away from the white light region in the CIE 1931 chromaticity diagram. By integrating the as prepared white light emission CdS QDs with a violet GaN chip, WLEDs were fabricated. The fabricated WLEDs exhibited a CRI of 87.9 and a CCT of 4619 K, which satisfy the demand of general illumination. The luminous flux and the luminous efficiency of the fabricated WLEDs, being less advanced than current commercial white light sources, can be further improved, meaning there is a need for much more in-depth studies on white light emission CdS QDs.

Bilayer PbS Quantum Dots for High-Performance Photodetectors

Due to their wide tunable bandgaps, high absorption coefficients, easy solution processabilities, and high stabilities in air, lead sulfide (PbS) quantum dots (QDs) are increasingly regarded as promising material candidates for next-generation light, low-cost, and flexible photodetectors. Current single-layer PbS-QD photodetectors suffer from shortcomings of large dark currents, low on-off ratios, and slow light responses. Integration with metal nanoparticles, organics, and high-conducting graphene/nanotube to form hybrid PbS-QD devices are proved capable of enhancing photoresponsivity; but these approaches always bring in other problems that can severely hamper the improvement of the overall device performance. To overcome the hurdles current single-layer and hybrid PbS-QD photodetectors face, here a bilayer QD-only device is designed, which can be integrated on flexible polyimide substrate and significantly outperforms the conventional single-layer devices in response speed, detectivity, linear dynamic range, and signal-to-noise ratio, along with comparable responsivity. The results which are obtained here should be of great values in studying and designing advanced QD-based photodetectors for applications in future flexible optoelectronics.

Colloidal quantum-dots surface and device structure engineering for high-performance light-emitting diodes

The application of colloidal quantum dots for light-emitting devices has attracted considerable attention in recent years, due to their unique optical properties such as size-dependent emission wavelength, sharp emission peak and high luminescent quantum yield. Tremendous efforts have been made to explore quantum dots for light-emission applications such as light-emitting diodes (LEDs) and light converters. The performance of quantum-dots-based light-emitting diodes (QD-LEDs) has been increasing rapidly in recent decades as the development of quantum-dots synthesis, surface-ligand engineering and device-architecture optimization. Recently, the external quantum efficiencies of red quantum-dots LEDs have exceeded 20.5% with good stability and narrow emission peak. In this review, we summarize the recent advances in QD-LEDs, focusing on quantum-dot surface engineering and device-architecture optimization.

Improving the Performance of PbS Quantum Dot Solar Cells by Optimizing ZnO Window Layer

Comparing with hot researches in absorber layer, window layer has attracted less attention in PbS quantum dot solar cells (QD SCs). Actually, the window layer plays a key role in exciton separation, charge drifting, and so on. Herein, ZnO window layer was systematically investigated for its roles in QD SCs performance. The physical mechanism of improved performance was also explored. It was found that the optimized ZnO films with appropriate thickness and doping concentration can balance the optical and electrical properties, and its energy band align well with the absorber layer for efficient charge extraction. Further characterizations demonstrated that the window layer optimization can help to reduce the surface defects, improve the heterojunction quality, as well as extend the depletion width. Compared with the control devices, the optimized devices have obtained an efficiency of 6.7% with an enhanced V _oc of 18%, J _sc of 21%, FF of 10%, and power conversion efficiency of 58%. The present work suggests a useful strategy to improve the device performance by optimizing the window layer besides the absorber layer.

Efficient interface and bulk passivation of PbS quantum dot infrared photodetectors by PbI2 incorporation

A simple passivation method based on PbI₂ was developed, which can effectively suppress the heterojunction interface and PbS QD surface defects by interface and ligand passivation.

Heat-up synthesis of Cu2SnS3 quantum dots for near infrared photodetection

Cu₂SnS₃ quantum dots were synthesized using a heat-up method and the infrared photoresponse was studied under infrared lamp, 1150 and 1064 nm lasers.

Strongly-coupled PbS QD solids by doctor blading for IR photodetection

In this work, doctor blading is proposed for the fabrication of strongly-coupled QD solids from a PbS nanoink for photodetection at telecom wavelengths.