1
|
Zheng Y, Zhang Z, Liu W, Wu Y, Fu X, Li L, Su J, Gao Y. Investigations on the Electrochemical and Mechanical Properties of Sb 2 O 3 Nanobelts by In Situ Transmission Electron Microscopy. SMALL METHODS 2022; 6:e2101416. [PMID: 35132830 DOI: 10.1002/smtd.202101416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Revised: 01/03/2022] [Indexed: 06/14/2023]
Abstract
Sb2 O3 shows great promise as a high-capacity anode material for sodium-ion batteries (SIBs) due to the combined mechanisms of intercalation, conversion, and alloying. In this work, the electrochemical performance and mechanical property of Sb2 O3 nanobelts during sodiation/desodiation are revealed by constructing nanoscale solid-state SIBs in a high-resolution transmission electron microscopy. It is found that the Sb2 O3 nanobelt exhibits an ultrahigh sodiation speed of ≈13.5 nm s-1 and experiences a three-step sodiation reaction including the intercalation reaction to form Nax Sb2 O3 , the conversion reaction to form Sb, and the alloying reaction to form NaSb. The alloying reaction is found to be reversible, while the conversion reaction is partially reversible. The Sb2 O3 nanobelt shows anisotropic expansion and the orientation of the Sb2 O3 nanobelt has great influence on the expansion ratio. It is found that the existence of a {010} plane with large d-spacing in the nanobelt leads to a surprisingly small expansion ratio (≈5%). The morphology of the Sb2 O3 nanobelt is well maintained during multiple electrochemical cycles. In situ bending experiments suggest that the sodiated Sb2 O3 nanobelts show improved toughness and flexibility compared to pristine Sb2 O3 nanobelts. These fundamental studies provide insight into the rational design of anode materials with improved electrochemical and mechanical performance in SIBs.
Collapse
Affiliation(s)
- Yifan Zheng
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zhi Zhang
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Weifeng Liu
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yonghui Wu
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiutao Fu
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Luying Li
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jun Su
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yihua Gao
- School of Physics, and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| |
Collapse
|
2
|
Gao D, Yang Z, Zheng L, Zheng K. Piezoresistive effect of n-type 〈111〉-oriented Si nanowires under large tension/compression. NANOTECHNOLOGY 2017; 28:095702. [PMID: 28120814 DOI: 10.1088/1361-6528/aa56ec] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Small-scale samples enable us to understand changes in physical properties under larger strain due to their higher tolerance to deformation. In this study, the piezoresistive character of n-type 〈111〉-oriented Si nanowires under large strain was measured during tensile and compressive deformations. The Si nanowires were directly cut from the wafer using top-down technology and deformed while capturing their electrical properties inside a transmission electron microscope. The experimental results show that both tensile and compressive deformation enhanced their electrical transport properties. The piezoresistance coefficient is of the same order of magnitude as its bulk counterpart, but half as large, which may be attributed to a larger strain magnitude. We also studied the circulatory characteristics and influence of electron beam radiation. This study provided new physical insights into piezoresistive effects under large strain.
Collapse
Affiliation(s)
- Di Gao
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, People's Republic of China
| | | | | | | |
Collapse
|
3
|
Zheng K, Zhang Z, Hu Y, Chen P, Lu W, Drennan J, Han X, Zou J. Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires. NANO LETTERS 2016; 16:1787-1793. [PMID: 26837494 DOI: 10.1021/acs.nanolett.5b04842] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Understanding the electrical properties of defect-free nanowires with different structures and their responses under deformation are essential for design and applications of nanodevices and strain engineering. In this study, defect-free zinc-blende- and wurtzite-structured InAs nanowires were grown using molecular beam epitaxy, and individual nanowires with different structures and orientations were carefully selected and their electrical properties and electromechanical responses were investigated using an electrical probing system inside a transmission electron microscope. Through our careful experimental design and detailed analyses, we uncovered several extraordinary physical phenomena, such as the electromechanical characteristics are dominated by the nanowire orientation, rather than its crystal structure. Our results provide critical insights into different responses induced by deformation of InAs with different structures, which is important for nanowire-based devices.
Collapse
Affiliation(s)
- Kun Zheng
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | | | - Yibin Hu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road, Shanghai 200083, China
| | - Pingping Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road, Shanghai 200083, China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu-Tian Road, Shanghai 200083, China
| | | | - Xiaodong Han
- Beijing Key Lab of Microstructure and Property of Advanced Material, Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology , Beijing 100124, China
| | | |
Collapse
|
4
|
Shao R, Gao P, Zheng K. The effect of tensile and bending strain on the electrical properties of p-type 〈110〉 silicon nanowires. NANOTECHNOLOGY 2015; 26:265703. [PMID: 26059313 DOI: 10.1088/0957-4484/26/26/265703] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In this study, electromechanical responses induced by uniaxial tensile and bending deformation were obtained for p-type 〈110〉-oriented Si whiskers by in situ transmission electron microscopy (TEM). Ohmic contacts between the nanowires (NWs) and electrodes were achieved using electron-beam-induced carbon deposition. Results show that enhancements in the carrier transport properties were achieved under both uniaxial tensile and bending strains. With the strain increased to 1.5% before fracture, the improvement in the conductance reached a maximum, which was as large as 24.2%, without any sign of saturation. On the other hand, under 5.8% bending strain, a 67% conductivity enhancement could be achieved. This study should provide important insight into the performance of nanoscale-strained Si.
Collapse
Affiliation(s)
- Ruiwen Shao
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, People's Republic of China
| | | | | |
Collapse
|
5
|
Phan HP, Kozeki T, Dinh T, Fujii T, Qamar A, Zhu Y, Namazu T, Nguyen NT, Dao DV. Piezoresistive effect of p-type silicon nanowires fabricated by a top-down process using FIB implantation and wet etching. RSC Adv 2015. [DOI: 10.1039/c5ra13425k] [Citation(s) in RCA: 34] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
This work reports the piezoresistance of silicon nanowires fabricated using focused ion beam and wet etching for NEMS mechanical sensors.
Collapse
Affiliation(s)
- Hoang-Phuong Phan
- Queensland Micro- and Nanotechnology Centre
- Griffith University
- Australia
| | - Takahiro Kozeki
- Department of Mechanical Engineering
- University of Hyogo
- Japan
| | - Toan Dinh
- Queensland Micro- and Nanotechnology Centre
- Griffith University
- Australia
| | - Tatsuya Fujii
- Department of Mechanical Engineering
- University of Hyogo
- Japan
| | - Afzaal Qamar
- Queensland Micro- and Nanotechnology Centre
- Griffith University
- Australia
| | - Yong Zhu
- Queensland Micro- and Nanotechnology Centre
- Griffith University
- Australia
| | - Takahiro Namazu
- Department of Mechanical Engineering
- University of Hyogo
- Japan
| | - Nam-Trung Nguyen
- Queensland Micro- and Nanotechnology Centre
- Griffith University
- Australia
| | - Dzung Viet Dao
- Queensland Micro- and Nanotechnology Centre
- Griffith University
- Australia
- School of Engineering
- Griffith University
| |
Collapse
|