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Lee JY, Ju BK, Cho KH. High-Resolution Patterning of Organic Emitting-Layer by Using Inkjet Printing and Sublimation Transfer Process. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1611. [PMID: 35564320 PMCID: PMC9100090 DOI: 10.3390/nano12091611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/07/2022] [Revised: 05/02/2022] [Accepted: 05/07/2022] [Indexed: 11/17/2022]
Abstract
We implemented ultra-high resolution patterns of 2822 pixels-per-inch (PPI) via an inkjet printing and vacuum drying process grafted onto a sublimation transfer process. Co-solvented ink with a 1:1 ratio of N,N-dimethylformamide (DMF) to ortho-dichlrorobenzene (oDCB) was used, and the inkjet driving waveform was optimized via analysis of Ohnesorge (Oh)-Reynolds (Re) numbers. Inkjet printing conditions on the donor substrate with 2822 PPI microchannels were investigated in detail according to the drop space and line space. Most sublimation transferred patterns have porous surfaces under drying conditions in an air atmosphere. Unlike the spin-coating process, the drying process of inkjet-printed films on the microchannel has a great effect on the sublimation of transferred thin film. Therefore, to control the morphology, we carefully investigated the drying process of the inkjet-printed inks in the microchannel. Using a vacuum drying process to control the morphology of inkjet-printed films, line patterns of 2822 PPI resolution having a root-mean-square (RMS) roughness of 1.331 nm without voids were successfully fabricated.
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Affiliation(s)
- Jun Yeub Lee
- Digital Transformation R&D Department, Korea Institute of Industrial Technology, Ansan-si 15588, Gyeonggi-do, Korea;
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, Seoul 02841, Seoungbuk-gu, Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, School of Electrical Engineering, Korea University, Seoul 02841, Seoungbuk-gu, Korea
| | - Kwan Hyun Cho
- Digital Transformation R&D Department, Korea Institute of Industrial Technology, Ansan-si 15588, Gyeonggi-do, Korea;
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2
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Lee IS, Tak YJ, Kang BH, Yoo H, Jung S, Kim HJ. Mechanochemical and Thermal Treatment for Surface Functionalization to Reduce the Activation Temperature of In-Ga-Zn-O Thin-film Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:19123-19129. [PMID: 32227838 DOI: 10.1021/acsami.9b22831] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Amorphous indium-gallium-zinc oxide (a-IGZO) films, which are widely regarded as a promising material for the channel layer in thin-film transistors (TFTs), require a relatively high thermal annealing temperature to achieve switching characteristics through the formation of metal-oxygen (M-O) bonding (i.e., the activation process). The activation process is usually carried out at a temperature above 300 °C; however, achieving activation at lower temperatures is essential for realizing flexible display technologies. Here, a facile, low-cost, and novel technique using cellophane tape for the activation of a-IGZO films at a low annealing temperature is reported. In terms of mechanochemistry, mechanical pulling of the cellophane tape induces reactive radicals on the a-IGZO film surface, which can give rise to improvements in the properties of the a-IGZO films, leading to an increase in the number of M-O bonds and the carrier concentration via radical reactions, even at 200 °C. As a result, the a-IGZO TFTs, compared to conventionally annealed a-IGZO TFTs, exhibited improved electrical performances, such as mobility, on/off current ratio, and threshold voltage shift (under positive bias temperature and negative bias temperature stress for 10,000 s at 50 °C) from 8.25 to 12.81 cm2/(V·s), 2.85 × 107 to 1.21 × 108, 6.81 to 3.24 V, and -6.68 to -4.93 V, respectively.
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Affiliation(s)
- I Sak Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Young Jun Tak
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Hyukjoon Yoo
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Sujin Jung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea
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Choi S, Kim KT, Park SK, Kim YH. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric. MATERIALS 2019; 12:ma12060852. [PMID: 30871272 PMCID: PMC6472027 DOI: 10.3390/ma12060852] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2019] [Revised: 03/06/2019] [Accepted: 03/12/2019] [Indexed: 11/19/2022]
Abstract
In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.
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Affiliation(s)
- Seungbeom Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.
| | - Kyung-Tae Kim
- School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06974, Korea.
| | - Sung Kyu Park
- School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06974, Korea.
| | - Yong-Hoon Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
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4
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Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors. Sci Rep 2018; 8:13905. [PMID: 30224825 PMCID: PMC6141615 DOI: 10.1038/s41598-018-32233-4] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2018] [Accepted: 09/04/2018] [Indexed: 11/09/2022] Open
Abstract
The wide research and development on oxide thin-film transistors (TFTs) have led to considerable changes in mainstream technology in various electronic applications. Up to now, much research has been focusing on enhancing the performance of oxide TFTs and simplifying fabricating process. At the stage of research and development in the oxide TFT, unexpectedly high gate current phenomena have been continuously reported by several groups, but the origins have not been yet studied in detail. The unusual gate current interferes with the conductance of the oxide TFT, which makes it difficult to interpret the performance of the TFT. Here we present the origin and control factors of the unconventional gate currents flow in the oxide TFT. The gate current is due to the conduction of electrons through trap sites in insulators, and the current is sophisticatedly controlled by the structural factors of TFT. Furthermore, the gate current flows only in one direction due to the charge state of the oxide semiconductor at the interface with the insulator. We also demonstrate that the vertical current path functions as a diode unit can protect the TFT from unintended gate electrostatic shock.
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Xu W, Li H, Xu JB, Wang L. Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:25878-25901. [PMID: 29509395 DOI: 10.1021/acsami.7b16010] [Citation(s) in RCA: 46] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Solution-processed metal oxide thin-film transistors (TFTs) are considered as one of the most promising transistor technologies for future large-area flexible electronics. This work surveys the recent advances in solution-processed metal oxide TFTs, including n-type oxide semiconductors, oxide dielectrics, and p-type oxide semiconductors. We first deliver a review on the history and present status of metal oxide TFTs. Then, we present the recent progress in solution-processed n-type oxide semiconductors, with a special focus on low-temperature and large-area solution-based approaches as well as emerging nondisplay applications. Next, we give a detailed analysis of the state-of-the-art solution-processed oxide dielectrics for low-power electronics. We further discuss the recent advances in solution-based p-type oxide semiconductors, which will enable the highly desirable future low-cost large-area complementary circuits. Finally, we draw conclusions and outline the perspectives over the research field.
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Affiliation(s)
- Wangying Xu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials , Shenzhen University , Shenzhen 518060 , China
| | - Hao Li
- Department of Electronic Engineering, Materials Science and Technology Research Center , The Chinese University of Hong Kong , Shatin New Town , Hong Kong SAR 999077 , China
| | - Jian-Bin Xu
- Department of Electronic Engineering, Materials Science and Technology Research Center , The Chinese University of Hong Kong , Shatin New Town , Hong Kong SAR 999077 , China
| | - Lei Wang
- Department of Electronic Engineering, Materials Science and Technology Research Center , The Chinese University of Hong Kong , Shatin New Town , Hong Kong SAR 999077 , China
- Department of Applied Physics, School of Physical and Mathematical Sciences , Nanjing Tech University , Nanjing 211816 , China
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Garlapati SK, Divya M, Breitung B, Kruk R, Hahn H, Dasgupta S. Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707600. [PMID: 29952112 DOI: 10.1002/adma.201707600] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2017] [Revised: 03/20/2018] [Indexed: 06/08/2023]
Abstract
Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.
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Affiliation(s)
- Suresh Kumar Garlapati
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Mitta Divya
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Ben Breitung
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Robert Kruk
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, ,64287, Darmstadt, Germany
| | - Subho Dasgupta
- Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344, Eggenstein-Leopoldshafen, Germany
- Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India
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Liu A, Zhu H, Sun H, Xu Y, Noh YY. Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706364. [PMID: 29904984 DOI: 10.1002/adma.201706364] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2017] [Revised: 03/07/2018] [Indexed: 06/08/2023]
Abstract
The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.
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Affiliation(s)
- Ao Liu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Huihui Zhu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Huabin Sun
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Yong Xu
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
| | - Yong-Young Noh
- Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620, Republic of Korea
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8
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Kim CH. Nanostructured Graphene: An Active Component in Optoelectronic Devices. NANOMATERIALS 2018; 8:nano8050328. [PMID: 29757992 PMCID: PMC5977342 DOI: 10.3390/nano8050328] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2018] [Revised: 05/11/2018] [Accepted: 05/12/2018] [Indexed: 01/09/2023]
Abstract
Nanostructured and chemically modified graphene-based nanomaterials possess intriguing properties for their incorporation as an active component in a wide spectrum of optoelectronic architectures. From a technological point of view, this aspect brings many new opportunities to the now well-known atomically thin carbon sheet, multiplying its application areas beyond transparent electrodes. This article gives an overview of fundamental concepts, theoretical backgrounds, design principles, technological implications, and recent advances in semiconductor devices that integrate nanostructured graphene materials into their active region. Starting from the unique electronic nature of graphene, a physical understanding of finite-size effects, non-idealities, and functionalizing mechanisms is established. This is followed by the conceptualization of hybridized films, addressing how the insertion of graphene can modulate or improve material properties. Importantly, it provides general guidelines for designing new materials and devices with specific characteristics. Next, a number of notable devices found in the literature are highlighted. It provides practical information on material preparation, device fabrication, and optimization for high-performance optoelectronics with a graphene hybrid channel. Finally, concluding remarks are made with the summary of the current status, scientific issues, and meaningful approaches to realizing next-generation technologies.
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Affiliation(s)
- Chang-Hyun Kim
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea.
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Nagarjuna R, Saifullah MSM, Ganesan R. Oxygen insensitive thiol-ene photo-click chemistry for direct imprint lithography of oxides. RSC Adv 2018; 8:11403-11411. [PMID: 35542774 PMCID: PMC9079138 DOI: 10.1039/c8ra01688g] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2018] [Accepted: 03/16/2018] [Indexed: 01/04/2023] Open
Abstract
UV-nanoimprint lithography (UV-NIL) is a promising technique for direct fabrication of functional oxide nanostructures. Since it is mostly carried out in aerobic conditions, the free radical polymerization during imprinting is retarded due to the radical scavenging ability of oxygen. Therefore, it is highly desirable to have an oxygen-insensitive photo-curable resin that not only alleviates the requirement of inert conditions but also enables patterning without making substantial changes in the process. Here we demonstrate the formulation of metal-containing resins that employ oxygen-insensitive thiol-ene photo-click chemistry. Allyl acetoacetate (AAAc) has been used as a bifunctional monomer that, on one hand, chelates with the metal ion, and on the other hand, offers a reactive alkene group for polymerization. Pentaerythritol tetrakis(3-mercaptopropionate) (PETMP), a four-arm thiol derivative, is used as a crosslinker as well as an active component in the thiol-ene photo-click chemistry. The FT-IR analyses on the metal-free and metal-containing resin formulations revealed that the optimum ratio of alkene to thiol is 1 : 0.5 for an efficient photo-click chemistry. The thiol-ene photo-click chemistry has been successfully demonstrated for direct imprinting of oxides by employing TiO2 and Ta2O5 as candidate systems. The imprinted films of metal-containing resins were subjected to calcination to obtain the corresponding patterned metal oxides. This technique can potentially be expanded to other oxide systems as well.
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Affiliation(s)
- Ravikiran Nagarjuna
- Department of Chemistry, Birla Institute of Technology and Science (BITS) Pilani, Hyderabad Campus Jawahar Nagar, Shameerpet Mandal Hyderabad 500078 India
| | - Mohammad S M Saifullah
- Institute of Materials Research and Engineering, ASTAR (Agency for Science, Technology, and Research) 2 Fusionopolis Way, #08-03 Innovis Singapore 138634 Republic of Singapore
| | - Ramakrishnan Ganesan
- Department of Chemistry, Birla Institute of Technology and Science (BITS) Pilani, Hyderabad Campus Jawahar Nagar, Shameerpet Mandal Hyderabad 500078 India
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Schmaltz T, Sforazzini G, Reichert T, Frauenrath H. Self-Assembled Monolayers as Patterning Tool for Organic Electronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1605286. [PMID: 28160336 DOI: 10.1002/adma.201605286] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2016] [Revised: 11/17/2016] [Indexed: 06/06/2023]
Abstract
The patterning of functional materials represents a crucial step for the implementation of organic semiconducting materials into functional devices. Classical patterning techniques such as photolithography or shadow masking exhibit certain limitations in terms of choice of materials, processing techniques and feasibility for large area fabrication. The use of self-assembled monolayers (SAMs) as a patterning tool offers a wide variety of opportunities, from the region-selective deposition of active components to guiding the crystallization direction. Here, we discuss general techniques and mechanisms for SAM-based patterning and show that all necessary components for organic electronic devices, i.e., conducting materials, dielectrics, organic semiconductors, and further functional layers can be patterned with the use of self-assembled monolayers. The advantages and limitations, and potential further applications of patterning approaches based on self-assembled monolayers are critically discussed.
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Affiliation(s)
- Thomas Schmaltz
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Giuseppe Sforazzini
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Thomas Reichert
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Holger Frauenrath
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
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Yoon MH, Lee WJ, Park WT, Park S, Noh YY. 71-5: In-Depth Study on Large-Area Bar-Printing and Selective-Area Direct Patterning of Metal Oxide Dielectrics for High-Performance Transistor Application. ACTA ACUST UNITED AC 2016. [DOI: 10.1002/sdtp.10888] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Myung-Han Yoon
- Materials Science and Engineering, Gwangju Institute of Science and Technology; Gwangju South Korea
| | - Won-June Lee
- Materials Science and Engineering, Gwangju Institute of Science and Technology; Gwangju South Korea
| | - Won-Tae Park
- Energy and Materials Engineering, Dongguk University; Seoul South Korea
| | - Sungjun Park
- Materials Science and Engineering, Gwangju Institute of Science and Technology; Gwangju South Korea
| | - Yong-Young Noh
- Energy and Materials Engineering, Dongguk University; Seoul South Korea
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12
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Kim DE, Cho SW, Kim B, Shin JH, Kang WJ, Yun MG, Beak SK, Cho HK, Kim YH, Kim Y. Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes. RSC Adv 2016. [DOI: 10.1039/c6ra09684k] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023] Open
Abstract
We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.
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Affiliation(s)
- Da Eun Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Sung Woon Cho
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Bora Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Jae Hui Shin
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Won Jun Kang
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Myeong Gu Yun
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Seung Ki Beak
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Yunseok Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
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