Electrochemical Performance of Potassium Bromate Active Electrolyte for Laser-Induced KBr-Graphene Supercapacitor Electrodes

In this paper, we have reported a low-concentration active electrolyte of KBrO3 for the supercapacitor’s application. The electrochemical processes were carried out in two concentrations of KBrO3 with 0.2 and 0.4 M. Additionally, we have reported a novel strategy for doping graphene during its fabrication process with a potassium bromide (KBr) solution. The chemical doping of graphene with KBr improved the electrochemical properties of graphene used as supercapacitors. HRTEM images confirmed the multi-layer graphene obtained by CO2 laser based on polyimide. The effect of KBr on the graphene lattice has been studied using Raman spectroscopy. The two electrodes of graphene and KBr-doped graphene were subjected to the electrochemical properties study as a supercapacitor by electrochemical impedance spectroscopy, cyclic voltammetry, and galvanostatic charge-discharge techniques. The results exhibited the successful method of graphene doping and the stability of using KBrO3 as a suitable electrolyte for electrochemical processes with this lower molarity. The specific capacitance of the pristine graphene capacitor in 0.2 M of KBrO3 was 33 Fg−1, while this value increased up to 70 Fg−1 for KBr-doped graphene in 0.4 M of KBrO3. The specific capacity in mAhg−1 has also increased twofold. The results exhibited the possibility of using KBrO3 as an electrolyte. The supercapacitor performance almost showed good stability in the life cycle.

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O₂, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N₂ gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O₂ showed ~15% de-doping over 4 months. The n-type doping in pure N₂ exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe2/Gr heterojunction

Excellent electrical and photoelectrical study of vertical integration by layered two-dimensional materials having gate tunable broad spectral (UV-Vis-NIR) light detection response.

A Label-Free and Ultrasensitive Immunosensor for Detection of Human Chorionic Gonadotrophin Based on Graphene FETs

We report on a label-free immunosensor based on graphene field effect transistors (G-FETs) for the ultrasensitive detection of Human Chorionic Gonadotrophin (hCG), as an indicator of pregnancy and related disorders, such as actopic pregnancy, choriocarcinoma and orchic teratoma. Pyrene based bioactive ester was non-covalently anchored onto the graphene channel in order to retain the sp² lattice. The G-FET transfer characteristics showed repeatable and reliable responses in all surface modifying steps using a direct current (DC) readout system. The hCG concentration gradient showed a detection limit of ~1 pg·mL^-1. The proposed method facilitates the cost-effective and viable production of graphene point-of-care devices for clinical diagnosis.

Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions

The electrical and photo-electrical properties of exfoliated MoS₂ were investigated in the dark and in the presence of deep ultraviolet (DUV) light under various environmental conditions (vacuum, N₂ gas, air, and O₂ gas). We examined the effects of environmental gases on MoS₂ flakes in the dark and after DUV illumination through Raman spectroscopy and found that DUV light induced red and blue shifts of peaks (E¹_2 g and A_1 g) position in the presence of N₂ and O₂ gases, respectively. In the dark, the threshold voltage in the transfer characteristics of few-layer (FL) MoS₂ field-effect transistors (FETs) remained almost the same in vacuum and N₂ gas but shifted toward positive gate voltages in air or O₂ gas because of the adsorption of oxygen atoms/molecules on the MoS₂ surface. We analyzed light detection parameters such as responsivity, detectivity, external quantum efficiency, linear dynamic range, and relaxation time to characterize the photoresponse behavior of FL-MoS₂ FETs under various environmental conditions. All parameters were improved in their performances in N₂ gas, but deteriorated in O₂ gas environment. The photocurrent decayed with a large time constant in N₂ gas, but decayed with a small time constant in O₂ gas. We also investigated the characteristics of the devices after passivating by Al₂O₃ film on the MoS₂ surface. The devices became almost hysteresis-free in the transfer characteristics and stable with improved mobility. Given its outstanding performance under DUV light, the passivated device may be potentially used for applications in MoS₂-based integrated optoelectronic circuits, light sensing devices, and solar cells.