A Deep Dive into Cu2ZnSnS4 (CZTS) Solar Cells: A Review of Exploring Roadblocks, Breakthroughs, and Shaping the Future

Renewable energy is crucial for sustainable future, and Cu2ZnSnS4 (CZTS) based solar cells shine as a beacon of hope. CZTS, composed of abundant, low-cost, and non-toxic elements, shares similarities with Cu(In,Ga)Se2 (CIGS). However, despite its promise and appealing properties for solar cells, CZTS-based solar cells faces performance challenges owing to inherent issues with CZTS material, and conventional substrate structure complexities. This review critically examines these roadblocks, explores ongoing efforts and breakthroughs, providing insight into the evolving landscape of CZTS-based solar cells research. Furthermore, as an optimistic turn in the field, the review first highlights the crucial need to transition to a superstrate structure for CZTS-based single junction devices, and summarizes the substantial progress made in this direction. Subsequently, dive into the discussion about the fascinating realm of CZTS-based tandem devices, providing an overview of the existing literature as well as outlining the possible potential strategies for enhancing the efficiency of such devices. Finally, the review provides a useful outlook that outlines the priorities for future research and suggesting where efforts should concentrate to shape the future of CZTS-based solar cells.

Computational and experimental characterizations of annealed Cu2ZnSnS4 thin films

We report on the synthesis and characterization of Cu₂ZnSnS₄ (CZTS) thin films prepared at different annealing temperatures using the sol-gel method and deposited on glass substrates using the immersing method. The XRD analysis demonstrates that the films annealed at 450 °C exhibit the most stable tetrahedral kesterite structure. Computationally, the Vienna ab initio simulation package (VASP) has been implemented to calculate critical structural properties of as-prepared CZTS) thin films and compared with those extracted from the XRD patterns. An excellent agreement is obtained between the calculated and measured structural parameters. Optical measurement of key optical parameters of annealed CZTS thin films shows a drastic manipulation of all-optical properties compared to the as-prepared thin films. In particular, an optical band gap of 1.62 eV obtained for annealed CZTS thin films at 450 °C makes them eligible to be potential candidates for thin film-based high-efficiency solar cells. Calculations of elastic properties of annealed thin films reveal that crystallite size increases and microstrain decrease compared with those of as-prepared thin films. The sheet resistance of annealed CZTS thin films exhibits a significant decline as the annealing temperature is increased. The electrical properties of annealed CZTS thin films could match some conductors. Remarkably, at 450 °C annealing temperature, the sheet resistance decreases to 74 Ω.cm⁻¹ indicating the possibility of using the annealed CZTS thin films for efficient and low cost solar cell applications.

Superstrate Structured FTO/TiO2/In2S3/Cu2ZnSnS4 Solar Cells Fabricated by a Spray Method with Aqueous Solutions

Copper Zinc Tin Sulfide (C2ZTS4) solar cells have become a fascinating research topic due to several advantages of the C2ZTS4 absorber layer, such as having non-toxic and abundantly available components. Superstrate structured C2ZTS4 solar cells were fabricated on the top of a fluorine-doped tin oxide (FTO) substrate with a spray pyrolysis method from the window layer to the absorber layer. Titanium dioxide (TiO2) and indium sulfide (In2S3) were used as the window and buffer layer, respectively. The source materials for the C2ZTS4 and buffer layers were all aqueous-based solutions. The metallic component ratio, Cu/(Zn + Sn), and the sulfur concentration in the solutions were systematically investigated. The optimum ratio of Cu/(Zn + Sn) in the film is about 0.785, while 0.18 M thiourea in the solution is the best condition for high performance. The C2ZTS4 layers deposited at lower temperatures (<360 °C) yielded a low quality resulting in low current density (JSC). On the other hand, the C2ZTS4 layers deposited at high temperature (~400 °C) showed a low fill factor (FF) without degradation of the open-circuit voltage (VOC) and JSC due to the junction degradation and high contact resistance between the absorber layer and metal contact. The best cell efficiency, VOC, JSC, and fill factor achieved were 3.34%, 383 mV, 24.6 mA/cm2, and 37.7%, respectively.

Aqueous-based Binary Sulfide Nanoparticle Inks for Cu2ZnSnS4 Thin Films Stabilized with Tin(IV) Chalcogenide Complexes

Cu₂ZnSnS₄ (CZTS) is a promising semiconductor material for photovoltaic applications, with excellent optical and electronic properties while boasting a nontoxic, inexpensive, and abundant elemental composition. Previous high-quality CZTS thin films often required either vacuum-based deposition processes or the use of organic ligands/solvents for ink formulation, which are associated with various issues regarding performance or economic feasibility. To address these issues, an alternative method for depositing CZTS thin films using an aqueous-based nanoparticle suspension is demonstrated in this work. Nanoparticles of constituent binary sulfides (Cu_xS and ZnS) are stabilized in an ink using tin(IV)-based, metal chalcogenide complexes such as [Sn₂S₆]⁴⁻. This research paper provides a systematic study of the nanoparticle synthesis and ink formulation via the enabling role of the tin chalcogenide complexing power, the deposition of high-quality CZTS thin films via spin coating and annealing under sulfur vapor atmosphere, their structural characterization in terms of nanocrystal phase, morphology, microstructure, and densification, and their resultant optoelectronic properties.

Improving Carrier-Transport Properties of CZTS by Mg Incorporation with Spray Pyrolysis

High nonradiative recombination, low diffusion length and band tailing are often associated with a large open circuit voltage deficit, which results in low efficiency of Cu₂ZnSnS₄ (CZTS) solar cells. Recently, cation substitution in CZTS has gained interest as a plausible solution to suppress these issues. However, the common substitutes, Ag and Cd, are not ideal due to their scarcity and toxicity. Other transition-metal candidates (e.g., Mn, Fe, Co, or Ni) are multivalent, which may form harmful deep-level defects. Magnesium, as one of the viable substitutes, does not have these issues, as it is very stable in +2 oxidation state, abundant, and nontoxic. In this study, we investigate the effect of Mg incorporation in sulfur-based Cu₂ZnSnS₄ to form Cu₂Mg_xZn_1-xSnS₄ by varying x from 0.0 to 1.0. These films were fabricated by chemical spray pyrolysis and the subsequent sulfurization process. At a high Mg content, it is found that Mg does not replace Zn to form a quaternary compound, which leads to the appearance of the secondary phases in the sample. However, a low Mg content (Cu₂Mg_0.05Zn_0.95SnS₄) improves the power conversion efficiency from 5.10% (CZTS) to 6.73%. The improvement is correlated to the better carrier-transport properties, as shown by a lesser amount of the ZnS secondary phase, higher carrier mobility, and shallower acceptor defects level. In addition, the Cu₂Mg_0.05Zn_0.95SnS₄ device also shows better charge-collection property based on the higher fill factor and quantum efficiency despite having lower depletion width. Therefore, we believe that the addition of a small amount of Mg is another viable route to improve the performance of the CZTS solar cell.

Structural and Solar Cell Properties of a Ag-Containing Cu2ZnSnS4 Thin Film Derived from Spray Pyrolysis

A silver (Ag)-incorporated kesterite Cu₂ZnSnS₄ (CZTS) thin film was fabricated by a facile spray pyrolysis method. Crystallographic analyses indicated successful incorporation of various amounts of Ag up to a Ag/(Ag + Cu) ratio of ca. 0.1 into the crystal lattice of CZTS in a homogeneous manner without formation of other impurity compounds. From the results of morphological investigations, Ag-incorporated films had larger crystal grains than the CZTS film. The sample with a relatively low Ag content (Ag/(Ag + Cu) of ca. 0.02) had a compact morphology without appreciable voids and pinholes. However, an increase in the Ag content in the CZTS film (Ag/(Ag + Cu) ca. 0.10) induced the formation of a large number of pinholes. As can be expected from these morphological properties, the best sunlight conversion efficiency was obtained by the solar cell based on the film with Ag/(Ag + Cu) of ca. 0.02. Electrostructural analyses of the devices suggested that the Ag-incorporated film in the device achieved reduction in the amounts of unfavorable copper on zinc antisite defects compared to the bare CZTS film. Moreover, the use of a Ag-incorporated film improved band alignment at the CdS(buffer)-CZTS interface. These alterations should also contribute to enhancement of device properties.

Inorganic and Organic Solution-Processed Thin Film Devices

Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

Impact of Precursor Compositions on the Structural and Photovoltaic Properties of Spray-Deposited Cu2 ZnSnS4 Thin Films

Pure sulfide Cu2 ZnSnS4 thin films were fabricated on Mo-coated glass substrates by facile spray deposition of aqueous precursor solutions containing Cu(NO3 )2 , Zn(NO3 )2 , Sn(CH3 SO3 )2 , and thiourea followed by annealing at 600 °C. When a precursor solution containing a stoichiometric composition of Cu, Zn, and Sn was used, the resulting Cu2 ZnSnS4 thin film contained a Cu2-x S impurity phase owing to the evaporation of Sn components during the annealing process. The Cu2-x S impurity in the Cu2 ZnSnS4 thin film was removed by reducing the concentration of Cu in the precursor solution. This resulted in an improvement of the structural features (i.e., grain sizes and compactness) as well as the electric properties such as acceptor densities, the nature of the acceptor defects, and carrier lifetimes. A solar cell based on the Cu2 ZnSnS4 film with an empirically optimal composition showed conversion efficiency of 8.1 %. The value achieved was one of the best efficiencies of Cu2 ZnSnS4 -based cells derived from a non-vacuum process.

Ge-alloyed CZTSe thin film solar cell using molecular precursor adopting spray pyrolysis approach

We report a promising fabrication approach for the synthesis of Ge-alloyed Cu₂Zn(Ge_xSn_1−x)Se₄ (CZGTSe) thin films using molecular precursors by spray pyrolysis to obtain band gap tuned kesterite solar cells.

Facile synthesis of composition and morphology modulated quaternary CuZnFeS colloidal nanocrystals for photovoltaic application

Quaternary semiconductor CuZnFeS nanocrystals with controlled size, shape and composition have been successfully synthesized and utilized to fabricate photovoltaic and photosensitive devices.