Beyond methylammonium lead iodide: prospects for the emergent field of ns2 containing solar absorbers

Unusual defect properties of the one-dimensional photovoltaic semiconductor selenium

Defect tolerance is crucial in photovoltaic absorbers. Here we report that trigonal selenium (t-Se) exhibits a perovskite-like antibonding valence band maximum arising from Se p-p coupling. This results in the shallow nature of dominant Se vacancy defects. We further reveal the unique defect self-healing characteristic of Se intrinsic point defects.

2D Metal Enabled Weak Fermi Level Pinning Effect and Tunable Charge Injection in Contacts with Inorganic 2D Perovskites

Tow-dimensional (2D) perovskites have invoked extensive interest because of their good stability and intriguing optoelectronic properties. However, in practical applications, the hampered carrier transportation imposed by the vertical array of large dielectric organic cations and the generally seen Fermi level pinning (FLP) effect in conventional metal-2D semiconductors need to be solved urgently. Sb3+/Bi3+-based inorganic lead-free 2D Cs3(M3+)2X9 perovskites (M = Sb3+, Bi3+; X = Cl-, Br-, I-) are promising candidates to replace the toxic 2D hLHP. The contact properties of Cs3Sb2Cl9 with 2D metals are studied in this work to achieve tunable Schottky barrier heights (SBH). Density functional theory calculations reveal a weak FLP factor of 0.91 in the studied junctions, which is beneficial for improving the carrier injection efficiency through electrode design. Calculations of tunneling properties indicate that a Cd3C2 electrode tends to achieve low SBH and high tunneling probability, while a VS2 (H) electrode tends to realize high SBH and low tunneling probability, suggesting that diverse applications of Cs3Sb2Cl9 can be achieved through electrode engineering.

Lead-Free Semiconductors: Phase-Evolution and Superior Stability of Multinary Tin Chalcohalides

Tin-based semiconductors are highly desirable materials for energy applications due to their low toxicity and biocompatibility relative to analogous lead-based semiconductors. In particular, tin-based chalcohalides possess optoelectronic properties that are ideal for photovoltaic and photocatalytic applications. In addition, they are believed to benefit from increased stability compared with halide perovskites. However, to fully realize their potential, it is first necessary to better understand and predict the synthesis and phase evolution of these complex materials. Here, we describe a versatile solution-phase method for the preparation of the multinary tin chalcohalide semiconductors Sn2SbS2I3, Sn2BiS2I3, Sn2BiSI5, and Sn2SI2. We demonstrate how certain thiocyanate precursors are selective toward the synthesis of chalcohalides, thus preventing the formation of binary and other lower order impurities rather than the preferred multinary compositions. Critically, we utilized 119Sn ssNMR spectroscopy to further assess the phase purity of these materials. Further, we validate that the tin chalcohalides exhibit excellent water stability under ambient conditions, as well as remarkable resistance to heat over time compared to halide perovskites. Together, this work enables the isolation of lead-free, stable, direct band gap chalcohalide compositions that will help engineer more stable and biocompatible semiconductors and devices.

Halide Engineering in Mixed Halide Perovskite-Inspired Cu2AgBiI6 for Solar Cells with Enhanced Performance

Cu2AgBiI6 (CABI) is a promising perovskite-inspired absorber for solar cells due to its direct band gap and high absorption coefficient. However, the nonradiative recombination caused by the high extrinsic trap density limits the performance of CABI-based solar cells. In this work, we employ halide engineering by doping bromide anions (Br-) in CABI thin films, in turn significantly improving the power conversion efficiency (PCE). By introducing Br- in the synthetic route of CABI thin films, we identify the optimum composition as CABI-10Br (with 10% Br at the halide site). The tailored composition appears to reduce the deep trap density as shown by time-resolved photoluminescence and transient absorption spectroscopy characterizations. This leads to a dramatic increase in the lifetime of charge carriers, which therefore improves both the external quantum efficiency and the integrated short-circuit current. The photovoltaic performance shows a significant boost since the PCE under standard 1 sun illumination increases from 1.32 to 1.69% (∼30% relative enhancement). Systematic theoretical and experimental characterizations were employed to investigate the effect of Br- incorporation on the optoelectronic properties of CABI. Our results highlight the importance of mitigating trap states in lead-free perovskite-inspired materials and that Br- incorporation at the halide site is an effective strategy for improving the device performance.

Group-IIIA element doped BaSnS2 as a high efficiency absorber for intermediate band solar cell from a first-principles insight

The quest for high-performance solar cell absorbers has garnered significant attention in the field of photovoltaic research in recent years. To overcome the Shockley-Queisser (SQ) limit of ∼31% for single junction solar cell and realize higher power conversion efficiency, the concept of an intermediate band solar cell (IBSC) has been proposed. This involves the incorporation of an intermediate band (IB) to assist the three band-edge absorptions within the single absorber layer. BaSnS2 has an appropriate width of its forbidden gap in order to host an IB. In this work, doping of BaSnS2 was studied based on hybrid functional calculations. The results demonstrated that isolated and half-filled IBs were generated with suitable energy states in the band gap region after group-IIIA element (i.e., Al, Ga, and In) doping at Sn site. The theoretical efficiencies under one sun illumination of 39.0%, 44.3%, and 39.7% were obtained for 25% doping concentration of Al, Ga, and In, respectively; thus, larger than the single-junction SQ-limit. Furthermore, the dopants have lower formation energies when substituting the Sn site compare to occupying the Ba and S sites, and that helps realizing a proper IB with three band-edge absorptions. Therefore, group-IIIA element doped BaSnS2 is proposed as a high-efficiency absorber for IBSC.

Advancements and Prospects in Perovskite Solar Cells: From Hybrid to All-Inorganic Materials

Hybrid perovskites, materials composed of metals and organic substances in their structure, have emerged as potential materials for the new generation of photovoltaic cells due to a unique combination of optical, excitonic and electrical properties. Inspired by sensitization techniques on TiO2 substrates (DSSC), CH3NH3PbBr3 and CH3NH3PbI3 perovskites were studied as a light-absorbing layer as well as an electron-hole pair generator. Photovoltaic cells based on per-ovskites have electron and hole transport layers (ETL and HTL, respectively), separated by an ac-tive layer composed of perovskite itself. Major advances subsequently came in the preparation methods of these devices and the development of different architectures, which resulted in an efficiency exceeding 23% in less than 10 years. Problems with stability are the main barrier to the large-scale production of hybrid perovskites. Partially or fully inorganic perovskites appear promising to circumvent the instability problem, among which the black perovskite phase CsPbI3 (α-CsPbI3) can be highlighted. In more advanced studies, a partial or total substitution of Pb by Ge, Sn, Sb, Bi, Cu or Ti is proposed to mitigate potential toxicity problems and maintain device efficiency.

Influence of chemical interactions on the electronic properties of BiOI/organic semiconductor heterojunctions for application in solution-processed electronics

Bismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.

Exploring Chalcohalide Perovskite-Inspired Materials (Sn2SbX2I3; X = S or Se) for Optoelectronic and Spintronic Applications

Chalcohalide perovskite-inspired materials have attracted attention as promising optoelectronic materials due to their small band gaps, high defect tolerance, nontoxicity, and stability. However, a detailed analysis of their electronic structure and excited-state properties is lacking. Here, using state-of-the-art density functional theory, an effective k·p model analysis, and many-body perturbation theory (within the framework of GW and BSE), we explore the band splitting and excitonic properties of Sn2SbX2I3 (X = S or Se). Our findings reveal that the Cmc21 phase exhibits Rashba and Dresselhaus effects, causing significant band splitting, especially near the conduction and valence band extremes, respectively. Moreover, we find that the exciton binding energy is larger than those of lead halide perovskites but smaller than those of chalcogenide perovskites. We also investigate polaron-facilitated charge carrier mobility, which is found to be similar to that of lead halide perovskites and greater than that of chalcogenide perovskites. These characteristics make these materials promising for applications in spintronics and optoelectronics.

Designing complex Pb3SBrxI4-x chalcohalides: tunable emission semiconductors through halide-mixing

Chalcohalides are desirable semiconducting materials due to their enhanced light-absorbing efficiency and stability compared to lead halide perovskites. However, unlike perovskites, tuning the optical properties of chalcohalides by mixing different halide ions into their structure remains to be explored. Here, we present an effective strategy for halide-alloying Pb3SBrxI4-x (1 ≤ x ≤ 3) using a solution-phase approach and study the effect of halide-mixing on structural and optical properties. We employ a combination of X-ray diffraction, electron microscopy, and solid-state NMR spectroscopy to probe the chemical structure of the chalcohalides and determine mixed-halide incorporation. The absorption onsets of the chalcohalides blue-shift to higher energies as bromide replaces iodide within the structure. The photoluminescence maxima of these materials mimics this trend at both the ensemble and single particle fluorescence levels, as observed by solution-phase and single particle fluorescence microscopy, respectively. These materials exhibit superior stability against moisture compared to traditional lead halide perovskites, and IR spectroscopy reveals that the chalcohalide surfaces are terminated by both amine and carboxylate ligands. Electronic structure calculations support the experimental band gap widening and volume reduction with increased bromide incorporation, and provide useful insight into the likely atomic coloring patterns of the different mixed-halide compositions. Ultimately, this study expands the range of tunability that is achievable with chalcohalides, which we anticipate will improve the suitability of these semiconducting materials for light absorbing and emission applications.

An ab initio DFT perspective on experimentally synthesized CuBi2O4

Here we present a comprehensive density functional theory (DFT) based ab initio study of copper bismuth oxide CuBi2O4 (CBO) in combination with experimental observations. The CBO samples were prepared following both solid-state reaction (SCBO) and hydrothermal (HCBO) methods. The P4/ncc phase purity of the as-synthesized samples was corroborated by Rietveld refinement of the powdered X-ray diffraction measurements along with Generalized Gradient Approximation of Perdew-Burke-Ernzerhof (GGA-PBE) and the Hubbard interaction U corrected GGA-PBE+U relaxed crystallographic parameters. Scanning and field emission scanning electron micrographs confirmed the particle size of the SCBO and HCBO samples to be ∼250 and ∼60 nm respectively. The GGA-PBE and GGA-PBE+U derived Raman peaks are in better agreement with that of the experimentally observed ones when compared to local density approximation based results. The DFT derived phonon density of states conforms with the absorption bands in Fourier transform infrared spectra. Both structural and dynamic stability criteria of the CBO are confirmed by elastic tensor and density functional perturbation theory-based phonon band structure simulations respectively. The CBO band gap underestimation of GGA-PBE as compared to UV-vis diffuse reflectance derived 1.8 eV was eliminated by tuning the U and the Hartree-Fock exact-exchange mixing parameter αHF in GGA-PBE+U and Heyd-Scuseria-Ernzerhof (HSE06) hybrid functionals respectively. The HSE06 with αHF = 14% yields the optimum linear optical properties of CBO in terms of the dielectric function, absorption, and their derivatives as compared to that of GGA-PBE and GGA-PBE+U functionals. Our as-synthesized HCBO shows ∼70% photocatalytic efficiency in degrading methylene blue dye under 3 h optical illumination. This DFT-guided experimental approach to CBO may help to gain a better understanding of its functional properties.

Structural, Electric and Dynamic Properties of (Pyrrolidinium)3[Bi2I9] and (Pyrrolidinium)3[Sb2I9]: New Lead-Free, Organic-Inorganic Hybrids with Narrow Band Gaps

Hybrid organic-inorganic iodides based on Bi(III) and Sb(III) provide integrated functionalities through the combination of high dielectric constants, semiconducting properties and ferroic phases. Here, we report a pyrrolidinium-based bismuth (1) and antimony (2) iodides of (NC₄H₁₀)₃[M₂I₉] (M: Bi(III), Sb(III)) formula which are ferroelastic at room temperature. The narrow band gaps (~2.12 eV for 1 and 2.19 eV for 2) and DOS calculations indicate the semiconducting characteristics of both materials. The crystal structure consists of discrete, face-sharing bioctahedra [M₂I₉]^3- and disordered pyrrolidinium amines providing charge balance and acting as spacers between inorganic moieties. At room temperature, 1 and 2 accommodate orthorhombic Cmcm symmetry. 1 displays a complex temperature-induced polymorphism. It is stable up to 525 K and undergoes a sequence of low-temperature phase transitions (PTs) at 221/222 K (I ↔ II) and 189/190 K (II ↔ III) and at 131 K (IV→III), associated with the ordering of pyrrolidinium cations and resulting in Cmcm symmetry breaking. 2 undergoes only one PT at T = 215 K. The dielectric studies disclose a relaxation process in the kilohertz frequency region, assigned to the dynamics of organic cations, described well by the Cole-Cole relation. A combination of single-crystal X-ray diffraction, synchrotron powder diffraction, spin-lattice relaxation time of ¹H NMR, dielectric and calorimetric studies is used to determine the structural phase diagram, cation dynamics and electric properties of (NC₄H₁₀)₃[M₂I₉]_.

A theoretical investigation of the lead-free double perovskites halides Rb2 XCl6 (X = Se, Ti) for optoelectronic and thermoelectric applications

In this study, structural, electronic, optical, thermoelectric, and thermodynamics properties of vacancy-ordered double perovskites Rb₂ XCl₆ (X = Se, Ti) were explored theoretically. The results revealed that Rb2SeCl6 and Rb₂ TiCl₆ are indirect band gap (E_g ) semiconductors with E_g values of 2.95 eV, and 2.84 eV respectively. The calculated properties (phonons, elastic constant, Poisson's ratio, and Pugh's ratio) revealed that both materials are dynamically and chemically stable and can exhibit brittle (Rb₂ SeCl₆ ) and ductile (Rb₂ TiCl₆ ) nature. From the analysis of optical parameters, it was noticed that the refractive index of the materials has a value of 1.5-2.0 where light absorption was found from the visible to the ultraviolet region. The thermoelectric properties determined by using the BoltzTrap code demonstrated that at room temperature, the Figure of merit (ZT) was found to be 0.74 and 0.76 for Rb₂ SeCl₆ and Rb₂ TiCl₆ , respectively. Despite a moderate value of ZT in such materials, further studies might explore effective methods for tuning the electronic band gap and improving the thermoelectric response of the material for practical energy production applications.

Efficiency Enhancement Strategies for Stable Bismuth-Based Perovskite and Its Bioimaging Applications

Lead-free perovskite is one of the ideal solutions for the toxicity and instability of lead halide perovskite quantum dots. As the most ideal lead-free perovskite at present, bismuth-based perovskite quantum dots still have the problem of a low photoluminescence quantum yield, and its biocompatibility also needs to be explored. In this paper, Ce³⁺ ions were successfully introduced into the Cs₃Bi₂Cl₉ lattice using a modified antisolvent method. The photoluminescence quantum yield of Cs₃Bi₂Cl₉:Ce is up to 22.12%, which is 71% higher than that of undoped Cs₃Bi₂Cl₉. The two quantum dots show high water-soluble stability and good biocompatibility. Under the excitation of a 750 nm femtosecond laser, high-intensity up-conversion fluorescence images of human liver hepatocellular carcinoma cells cultured with the quantum dots were obtained, and the fluorescence of the two quantum dots was observed in the image of the nucleus. The fluorescence intensity of cells cultured with Cs₃Bi₂Cl₉:Ce was 3.20 times of that of the control group and 4.54 times of the control group for the fluorescence intensity of the nucleus, respectively. This paper provides a new strategy to develop the biocompatibility and water stability of perovskite and expands the application of perovskite in the field.

Biomolecules incorporated in halide perovskite nanocrystals: synthesis, optical properties, and applications

Halide perovskite nanocrystals (HPNCs) have emerged at the forefront of nanomaterials research over the past two decades. The physicochemical and optoelectronic properties of these inorganic semiconductor nanoparticles can be modulated through the introduction of various ligands. The use of biomolecules as ligands has been demonstrated to improve the stability, luminescence, conductivity and biocompatibility of HPNCs. The rapid advancement of this field relies on a strong understanding of how the structure and properties of biomolecules influences their interactions with HPNCs, as well as their potential to extend applications of HPNCs towards biological applications. This review addresses the role of several classes of biomolecules (amino acids, proteins, carbohydrates, nucleotides, etc.) that have shown promise for improving the performance of HPNCs and their potential applications. Specifically, we have reviewed the recent advances on incorporating biomolecules with HP nanomaterials on the formation, physicochemical properties, and stability of HP compounds. We have also shed light on the potential for using HPs in biological and environmental applications by compiling some recent of proof-of-concept demonstrations. Overall, this review aims to guide the field towards incorporating biomolecules into the next-generation of high-performance HPNCs for biological and environmental applications.

Mixed valence Sn doped (CH3NH3)3Bi2Br9 produced by mechanochemical synthesis

Bismuth halides with formula A₃Bi₂X₉, where A is an inorganic or organic cation, show desirable properties as solar absorbers and luminescent materials. Control of structural and electronic dimensionality of these compounds is important to yield materials with good light absorption and charge transport. Here we report mechanochemical reaction of (CH₃NH₃)₃Bi₂Br₉ with SnBr₂ at room temperature in air, yielding a material with strong absorption across the visible region. We attribute this to mixed valence doping of Sn(II) and Sn(IV) on the Bi site. X-Ray diffraction shows no secondary phases, even after heating at 200 °C to improve crystallinity. X-Ray photoelectron spectroscopy suggests the presence of Sn(II) and Sn(IV) states. A similar approach to dope Sn into the iodide analogue (CH₃NH₃)₃Bi₂I₉ was unsuccessful.

Combined experimental and DFT approach to BiNbO4 polymorphs

Here we present a detailed ab initio study of two experimentally synthesized bismuth niobate BiNbO4 (BNO) polymorphs within the framework of density functional theory (DFT). We synthesized orthorhombic α-BNO and triclinic β-BNO using a solid-state reaction technique. The underlying Pnna and P1̄ crystal symmetries along with their respective phase purity have been confirmed from Rietveld refinement of the powdered X-ray diffraction measurements in combination with generalized gradient approximation of Perdew-Burke-Ernzerhof (GGA-PBE) based DFT simulations. The scanning electron micrographs revealed average grain sizes to be 500 nm and 1 μm for α-BNO and β-BNO respectively. The energy-dispersive X-ray spectroscopy identified the Bi, Nb, and O with proper stoichiometry. The phase purity of the as-synthesized samples was further confirmed by comparing the local density approximation (LDA) norm-conserving pseudo-potential based DFT-simulated Raman peaks with that of experimentally measured ones. The relevant bond vibrations detected in Fourier transform infrared spectroscopy were matched with GGA-PBE derived phonon density of states simulation for both polymorphs. The structural stability and the charge dynamics of the polymorphs were verified from elastic stress and born charge tensor simulations respectively. The dynamical stability of the α-BNO was confirmed from phonon band structure simulation using density functional perturbation theory with Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. The electronic band gaps of 3.08 and 3.36 eV for α-BNO and β-BNO measured from UV-Vis diffuse reflectance measurements were matched with the sophisticated HSE06 band structure simulation by adjusting the Hartree-Fock exchange parameter. Both GGA-PBE and HSE06 functional were used to simulate complex dielectric function and its derivatives with the help of Fermi's golden rule to define the optical properties in the linear regime. All these may have provided a rigorous theoretical analysis for the experimentally synthesized α-BNO and β-BNO polymorphs.

Heavy pnictogen chalcohalides for efficient, stable, and environmentally friendly solar cell applications

Solar cell technology is an effective solution for addressing climate change and the energy crisis. Therefore, many researchers have investigated various solar cell absorbers that convert Sunlight into electric energy. Among the different materials researched, heavy pnictogen chalcohalides comprising heavy pnictogen cations, such as Bi³⁺and Sb³⁺, and chalcogen-halogen anions have recently been revisited as emerging solar absorbers because of their potential for efficient, stable, and low-toxicity solar cell applications. This review explores the recent progress in the applications of heavy pnictogen chalcohalides, including oxyhalides and mixed chalcohalides, in solar cells. We categorize them into material types based on their common structural characteristics and describe their up-to-date developments in solar cell applications. Finally, we discuss their material imitations, challenges for further development, and possible strategies for overcoming them.

Emerging Chalcohalide Materials for Energy Applications

Semiconductors with multiple anions currently provide a new materials platform from which improved functionality emerges, posing new challenges and opportunities in material science. This review has endeavored to emphasize the versatility of the emerging family of semiconductors consisting of mixed chalcogen and halogen anions, known as "chalcohalides". As they are multifunctional, these materials are of general interest to the wider research community, ranging from theoretical/computational scientists to experimental materials scientists. This review provides a comprehensive overview of the development of emerging Bi- and Sb-based as well as a new Cu, Sn, Pb, Ag, and hybrid organic-inorganic perovskite-based chalcohalides. We first highlight the high-throughput computational techniques to design and develop these chalcohalide materials. We then proceed to discuss their optoelectronic properties, band structures, stability, and structural chemistry employing theoretical and experimental underpinning toward high-performance devices. Next, we present an overview of recent advancements in the synthesis and their wide range of applications in energy conversion and storage devices. Finally, we conclude the review by outlining the impediments and important aspects in this field as well as offering perspectives on future research directions to further promote the development of chalcohalide materials in practical applications in the future.

One-Dimensional Iodoantimonate(III) and Iodobismuthate(III) Supramolecular Hybrids with Diiodine: Structural Features, Stability and Optical Properties

Two isostructural pairs of supramolecular iodoantimonate(III) and iodobismuthate(III) complexes with I₂ units "trapped" in solid state via halogen bonding-Cat₃[[M₂I₉](I₂)} (Cat = tetramethylammonium and 1-methylpyridinium, M = Sb(III) and Bi(III)) were prepared. For all compounds, values of optical band gaps were determined, together with thermal stability; the complexes were additionally characterized by Raman spectroscopy.

Eco-friendly MA3Bi2I9perovskite thin films based ammonia sensor

Organic-inorganic perovskite halides (OIPH) have emerged as a wonder material with growing interest in sensors detecting various toxic gases. However, lead toxicity represents a potential obstacle, and therefore finding lead-free cost-effective compatible materials for gas sensing applications is essential. In this work, methylammonium bismuth iodide i.e. (CH₃NH₃)₃Bi₂I₉(MABI) perovskite thin films-based ammonia (NH₃) sensor was synthesized using an antisolvent-assisted one-step spin coating method. The MABI sensor shows a linear relationship between the responsivity and concentration of NH₃with excellent reversibility, high gas responsivity, and humidity stability. The MABI thin-film sensor exhibits a maximum gas response of 24%, a short response/recovery time i.e. 0.14 s /8.15 s and good reversibility at 6 ppm of NH₃. It was observed that MABI thin films based sensors have excellent ambient stability over a couple of months. This work reveals that it is feasible to design high-performance gas sensors based on environmentally-friendly Bi-based OIPH materials.

Solution-phase synthesis of the chalcogenide perovskite barium zirconium sulfide as colloidal nanomaterials

Chalcogenide perovskites such as BaZrS₃ have promising optoelectronic properties. Methods to produce these materials at low temperatures, especially in the solution phase, are currently scarce. We describe a solution-phase synthesis of colloidal nanoparticles of BaZrS₃ using reactive metal amide precursors. The nanomaterials are crystallographically and spectroscopically characterized.

[SMe3]2[Bi2Ag2I10], a silver iodido bismuthate with an unusually small band gap

Iodido metalates of heavy main group elements have seen much research interest in the last years due to their possible application as absorbers in photovoltaics. However, for materials based on the non-toxic element bismuth one challenge lies in narrowing the optical band gap for sufficient solar absorption. Here, we present a new iodido silver bismuthate, [SMe₃]₂[Bi₂Ag₂I₁₀] (1), which is prepared from solution and characterized regarding its structure, thermal stability and optical absorption. While compounds with similar anion compositions are known, the band gap of 1.82 eV is the smallest in chain-like Bi/Ag/I-compounds that has been reported to date. To support our experimental findings we carried out computational investigations and were able to reproduce the surprisingly narrow band gap, highlighting the subtle influence of the connectivity of different building units in multinary bismuthates. We also prepared and characterized the simple iodido pentelates [SMe]₃[E₂I₉] (E = Bi, Sb; 2, 3) to provide a point of comparison.

Two [Co(bipy)3]3+-Templated Silver Halobismuthate Hybrids: Syntheses, Structures, Photocurrent Responses, and Theoretical Studies

Employing in situ-generated metal complexes as structural decorating agents, we, for the first time, isolated two [Co(bipy)₃]³⁺-templated silver halobismuthate hybrids, namely [Co(bipy)₃]₂Ag₄Bi₂X₁₆ (X = Br (1), I (2); bipy = 2,2'-bipyridine). Compounds 1 and 2 belong to the isomorphic phrases and exhibit the nonperovskite structures characteristic of the discrete [Ag₄Bi₂X₁₆]^6- anions. UV-vis absorption spectra analyses showed that the optical band gaps of compounds 1 and 2 are 2.40 and 1.95 eV, respectively, implying the visible light responding semiconductor properties. Moreover, under the alternate light illumination, the title compounds exhibited "on/off" photocurrent behaviors, with high photocurrent densities comparable to many metal halide hybrids. Presented in this work also involved the Hirshfeld surface analyses and X-ray photoelectron spectroscopy studies together with the theoretical band structures, density of states, and electron wave functions.

Supramolecular Diiodine-Bromostannate(IV) Complexes: Narrow Bandgap Semiconductors

Three supramolecular bromostannates(IV) with "trapped" diiodine molecules, Cat₂{[SnBr₆](I₂)} (Cat = Me₄N⁺ (1), 1-MePy⁺ (2) and 4-MePyH (3)), were synthesized. In all cases, I₂ linkers are connected with bromide ligands via halogen···halogen non-covalent interactions. Articles 1-3 were studied using Raman spectroscopy, thermogravimetric analysis, and diffuse reflectance spectroscopy. The latter indicates that 1-3 are narrow band gap semiconductors.

Understanding the Crystal Growth of Bismuth Chalcohalide Nanorods through a Self-Sacrificing Template Process: A Comprehensive Study

Bismuth-based semiconductors are promising candidates for applications in photocatalysis, photodetection, solar cells, etc. BiSI in particular is attracting attention. It has anisotropic optoelectronic properties and comprises relatively abundant elements. However, the synthesis of this ternary compound presents several challenges. Here, we delve into the underlying chemical processes that lead to the crystal growth of BiSI nanorods and optimize a solution-based synthesis. The mechanism of formation of BiSI nanocrystals is the self-sacrifice of Bi₂S₃ nanostructures, which also act as templates. The crystallographic similarities between the chalcogenide and the chalcohalide allow for the solid state transformation from one to the other. However, there is also a synergy with the I₃^- species formed in the reaction media needed to obtain BiSI. Our method makes use of a green solvent, avoids complicated media, and drastically reduces the reaction time compared to other methods. The obtained nanorods present a band gap of 1.6 eV, in accordance with the reported values. This work presents insight into the chemistry of bismuth-based semiconductors, while introducing an easy, green, and scalable synthesis of a promising material, which could also be applied to similar compounds and other chalcoiodides, such as SbSI. In addition, the optical properties of the BiSI nanorods show their potential in photovoltaic applications.

Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control

While low-dimensional organometal halide perovskites are expected to open up new opportunities for a diverse range of device applications, like in their bulk counterparts, the toxicity of Pb-based halide perovskite materials is a significant concern that hinders their practical use. We recently predicted that lead triiodide (PbI3) columns derived from trimethylsulfonium (TMS) lead triiodide (CH3)3SPbI3 (TMSPbI3) by stripping off TMS ligands should be semimetallic, and additionally ultrahigh negative differential resistance (NDR) can arise from the heterojunction composed of a TMSPbI3 channel sandwiched by PbI3 electrodes. Herein, we computationally explore whether similar material and device characteristics can be obtained from other one-dimensional halide perovskites based on non-Pb metal elements, and in doing so deepen the understanding of their mechanistic origins. First, scanning through several candidate metal halide inorganic frameworks as well as their parental form halide perovskites, we find that the germanium triiodide (GeI3) column also assumes a semimetallic character by avoiding the Peierls distortion. Next, adopting the bundled nanowire GeI3-TMSGeI3-GeI3 junction configuration, we obtain a drastically high peak current density and ultrahigh NDR at room temperature. Furthermore, the robustness and controllability of NDR signals from GeI3-TMSGeI3-GeI3 devices under strain are revealed, establishing its potential for flexible electronics applications. It will be emphasized that, despite the performance metrics notably enhanced over those from the TMSPbI3 case, these device characteristics still arise from the identical quantum hybridization NDR mechanism.

Halide Perovskite Solar Cells for Building Integrated Photovoltaics: Transforming Building Façades into Power Generators

The rapid emergence of organic-inorganic lead halide perovskites for low-cost and high-efficiency photovoltaics promises to impact new photovoltaic concepts. Their high power conversion efficiencies, ability to coat perovskite layers on glass via various scalable deposition techniques, excellent optoelectronic properties, and synthetic versatility for modulating transparency and color allow perovskite solar cells (PSCs) to be an ideal solution for building-integrated photovoltaics (BIPVs), which transforms windows or façades into electric power generators. In this review, the unique features and properties of PSCs for BIPV application are accessed. Device engineering and optical management strategies of active layers, interlayers, and electrodes for semitransparent, bifacial, and colorful PSCs are also discussed. The performance of PSCs under conditions that are relevant for BIPV such as different operational temperature, light intensity, and light incident angle are also reviewed. Recent outdoor stability testing of PSCs in different countries and other demonstration of scalability and deployment of PSCs are also spotlighted. Finally, the current challenges and future opportunities for realizing perovskite-based BIPV are discussed.

Chemistry, Structure, and Function of Lone Pairs in Extended Solids

ConspectusThe lone pair has been a known feature of the electronic structure of molecules for over 100 years. Beginning with the pioneering work of Lewis and others that was later developed into useful guidelines for predicting molecular structure, lone pairs and their steric consequences are now taught at the very earliest stages of a chemistry education. In the crystalline solid state, lone pairs have perhaps had a less visible yet equally consequential role, with a significant impact on a range of properties and functionalities. Important properties associated with s² electron-derived lone pairs include their role in creating conditions favorable for ion transport, in the formation and correlation of local dipoles and the resulting polar behavior leading to ferroics and multiferroics, in increasing the refractive index of glass, in reducing the thermal conductivity of thermoelectric materials, and in breaking local symmetry permitting second-harmonic light generation.. In recent years, the role of the lone pair in developing the electronic structure of some topological quantum materials has also been recognized. While structural distortions due to lone pairs have traditionally been characterized through their crystallography, recent advances in scattering and spectroscopy have revealed the presence of local lone pair-driven distortions that do not correlate over long length scales. The role of these crystallographically "hidden" lone pairs, their detection, and their impact on properties have become a growing body of work in the literature. Hidden lone pairs are an effective argument for considering a role for lone pairs that goes beyond their being objects that occupy space in the coordination polyhedra of cations. This Account introduces the chemistry of lone pairs in extended crystalline solids, including a discussion of when they are stereochemically active, how they manifest in the structure, and how their chemistry can be tuned by the chemical environment around them. Eventually, all of these factors work in unison to help develop and tune properties of interest. Certain specific examples of structure-property relationships in materials that are driven by lone pair behavior are described here, including the potential impact of lone pairs on the optical and electronic properties of hybrid halide perovskite compounds that are relevant to their photovoltaic applications. We highlight the role of lone pairs in the dielectric behavior of geometrically frustrated pyrochlores, the temperature-dependent optoelectronic behavior of halide perovskites, the polar phase transitions in lead-free ferroelectric perovskites, and the compositional insulator-to-metal transition in ruthenium pyrochlores. The theme underpinning this Account is that the lone pair can be considered to be a powerful design element for a broad range of material function.

Lead-Free Cs2 AgSbCl6 Double Perovskite Nanocrystals for Effective Visible-Light Photocatalytic C-C Coupling Reactions

Lead halide perovskite nanocrystals (NCs) have been regarded as a promising potential photocatalyst, owing to their high molar extinction coefficient, low economic cost, adjustable light absorption range, and ample surface active sites. However, the toxicity of lead and its inherent instability in water and polar solvents could hinder their wide application in the field of photocatalysis. Herein, with α-alkylation of aldehydes as a model reaction, C-C bond-forming is demonstrated in high yield by using lead-free double perovskite Cs₂ AgSbCl₆ NCs under visible light irradiation. Moreover, the photocatalytic performance is simply improved by rational control of the surface ligands and a reaction mechanism involving a radical intermediate is proposed. Although the stability requires further amelioration, the results indicate the enormous potential of lead-free double perovskite NC photocatalysts for organic synthesis and chemical transformations.

Growth of bismuth- and antimony-based chalcohalide single crystals by the physical vapor transport method

Three typical AVBVICVII single crystals with a one-dimensional crystal structure are grown by the physical vapor transport method.

GeSe photovoltaics: doping, interfacial layer and devices

Germanium selenide (GeSe) bulk crystals, thin films and solar cells are investigated with a focus on acceptor-doping with silver (Ag) and the use of an Sb2Se3 interfacial layer. The Ag-doping...

Emerging Chalcogenide Thin Films for Solar Energy Harvesting Devices

Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar cells, exemplified by the commercialization of Cu(In,Ga)Se₂- and CdTe-based photovoltaic technologies. Recently, several other chalcogenides have emerged as promising photoabsorbers for energy harvesting through the conversion of solar energy to electricity and fuels. The goal of this review is to summarize the development of emerging binary (Sb₂X₃, GeX, SnX), ternary (Cu₂SnX₃, Cu₂GeX₃, CuSbX₂, AgBiX₂), and quaternary (Cu₂ZnSnX₄, Ag₂ZnSnX₄, Cu₂CdSnX₄, Cu₂ZnGeX₄, Cu₂BaSnX₄) chalcogenides (X denotes S/Se), focusing especially on the comparative analysis of their optoelectronic performance metrics, electronic band structure, and point defect characteristics. The performance limiting factors of these photoabsorbers are discussed, together with suggestions for further improvement. Several relatively unexplored classes of chalcogenide compounds (such as chalcogenide perovskites, bichalcogenides, etc.) are highlighted, based on promising early reports on their optoelectronic properties. Finally, pathways for practical applications of emerging chalcogenides in solar energy harvesting are discussed against the backdrop of a market dominated by Si-based solar cells.

Investigation of the sublimation mechanism of GeSe and GeS

GeSe and GeS have emerged as promising light-harvesting materials for photovoltaics due to their attractive optoelectronic properties, non-toxic and earth-abundant constituents, and excellent stability. Here we unveil the diatomic molecule sublimation mechanism of GeSe and GeS that directly guides the optimization of GeSe and GeS solar-cell fabricated via the close-space sublimation method.

Quasi-Zero Dimensional Halide Perovskite Derivates: Synthesis, Status, and Opportunity

In recent decades, many technological advances have been enabled by nanoscale phenomena, giving rise to the field of nanotechnology. In particular, unique optical and electronic phenomena occur on length scales less than 10 nanometres, which enable novel applications. Halide perovskites have been the focus of intense research on their optoelectronic properties and have demonstrated impressive performance in photovoltaic devices and later in other optoelectronic technologies, such as lasers and light-emitting diodes. The most studied crystalline form is the three-dimensional one, but, recently, the exploration of the low-dimensional derivatives has enabled new sub-classes of halide perovskite materials to emerge with distinct properties. In these materials, low-dimensional metal halide structures responsible for the electronic properties are separated and partially insulated from one another by the (typically organic) cations. Confinement occurs on a crystal lattice level, enabling bulk or thin-film materials that retain a degree of low-dimensional character. In particular, quasi-zero dimensional perovskite derivatives are proving to have distinct electronic, absorption, and photoluminescence properties. They are being explored for various technologies beyond photovoltaics (e.g. thermoelectrics, lasing, photodetectors, memristors, capacitors, LEDs). This review brings together the recent literature on these zero-dimensional materials in an interdisciplinary way that can spur applications for these compounds. The synthesis methods, the electrical, optical, and chemical properties, the advances in applications, and the challenges that need to be overcome as candidates for future electronic devices have been covered.

Hidden spontaneous polarisation in the chalcohalide photovoltaic absorber Sn2SbS2I3

Perovskite-inspired materials aim to replicate the optoelectronic performance of lead-halide perovskites, while eliminating issues with stability and toxicity. Chalcohalides of group IV/V elements have attracted attention due to enhanced stability provided by stronger metal-chalcogen bonds, alongside compositional flexibility and ns2 lone pair cations - a performance-defining feature of halide perovskites. Following the experimental report of solution-grown tin-antimony sulfoiodide (Sn2SbS2I3) solar cells, with power conversion efficiencies above 4%, we assess the structural and electronic properties of this emerging photovoltaic material. We find that the reported centrosymmetric Cmcm crystal structure represents an average over multiple polar Cmc21 configurations. The instability is confirmed through a combination of lattice dynamics and molecular dynamics simulations. We predict a large spontaneous polarisation of 37 μC cm-2 that could be active for electron-hole separation in operating solar cells. We further assess the radiative efficiency limit of this material, calculating ηmax > 30% for film thicknesses t > 0.5 μm.

Investigations of modulation effect of co-metal ions on the optical properties of the hybrid double perovskites (MA)2AgBi1-xSbxBr6

Composition engineering plays an important role in generating novel properties and decreasing the lead (Pb) toxicity for halide perovskite materials. To find out the modulation effect introduced by the composition engineering, namely,B'-site co-metal ions, in (MA)₂AgBi_1-xSb_xBr₆systems with various Bi/Sb ratios ofx= 0, 0.25, 0.75, 1.00, series of theoretical simulations and analyses are carried out. For the (MA)₂AgBi_1-xSb_xBr₆systems, the Goldschmidt tolerance factortand the octahedral factorμindicate that all samples are in a standard double perovskite structure with alternating AgBr₆and Bi/SbBr₆octahedra. The calculated electronic structures show that the band gap of (MA)₂AgBi_1-xSb_xBr₆decreases with the increase of Sb content, but the indirect band gaps are maintained for all samples. By analyses of the imaginary partɛ₂(ω) of dielectric function and the absorption spectra, we find that all (MA)₂AgBi_1-xSb_xBr₆systems show absorption in the visible-light region. All these results indicate that the composition engineering adopted in this paper is an effective strategy to modulate the optical properties of (MA)₂AgBi_1-xSb_xBr₆systems and may open a new way to put it into applications in the fields of solar cells and other optoelectronic devices.

Enhanced Photovoltaic Performance of BiSCl Solar Cells Through Nanorod Array

BiSCl single-crystalline nanofibers were synthesized by a facile one-pot solvothermal approach for the first time. BiSCl possesses a double chain type structure and grows readily along the c-axis, resulting the fibrous morphology. UV/Vis absorption spectroscopy revealed that BiSCl nanofibers exhibit a strong light absorption in a wavelength range from UV to visible light, corresponding to a bandgap of 1.96 eV. Ultraviolet photoelectron spectroscopy and density functional theory calculations revealed that BiSCl is a direct n-type semiconductor with valence band maximum and conduction band minimum located at 6.04 and 4.08 eV below the vacuum level, respectively. To investigate the photovoltaic performance, the homogeneous thin film of BiSCl-nanorod array was fabricated on a TiO₂ porous film by a modified solvothermal process, where the nanorod array is oriented vertically to the surface of the TiO₂ porous film. A proper band alignment of BiSCl-based solar cells with an architecture of fluorine-doped tin oxide (FTO)/TiO₂ /BiSCl/(I₃ ^- /I^- )/Pt gave a PCE of 1.36 % and a relatively large short-circuit photocurrent density of 9.87 mA cm^-2 for the first time. The preliminary photovoltaic study result revealed a potential possibility of BiSCl-nanorod array as a light absorber for solar cells that can be fabricated by the low-cost solution process.

Alternative Lone-Pair ns2 -Cation-Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications

Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb²⁺ cation with a lone-pair 6s² electronic configuration embedded in a mixed covalent-ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns² cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns² cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns² cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.

One-dimensional lead iodide hybrid stabilized by inorganic hexarhenium cluster cations as a new broad-band emitter

A novel one-dimensional (1D) hybrid {[Re6S8(PzH)6][Pb3I8(DMF)2]}·6(DMF) with hexarhenium cluster cations has been synthesized and characterized by means of single-crystal X-ray diffraction. Two DMF oxygen atoms bridge three lead iodides to form a set of lead iodides, {[PbI4/2I(ODMF)1/2][PbI4/2(ODMF)2/2][PbI4/2I(ODMF)1/2]}2-, and these sets of lead iodide share edges to form a 1D lead iodide chain, [Pb3I8(DMF)2]2- which has never been reported before and is different from the typical edge sharing of octahedral PbI6 units. 1D lead iodide chains are stacked along the a axis, and [Re6S8(PzH)6]2+ cations with H-bonded DMF molecules to pyrazole N-H reside between 1D lead iodide chains. This 1D lead iodide hybrid shows strong broad-band emission with a peak at 634 nm. The excellent photoluminescent properties of the new lead iodide hybrid exhibit great potential for optoelectronic applications in photonic devices with broad-band emission and stability. This study introduces a new class of lead iodide hybrid compounds having new inorganic cluster cations rather than the organic amine cations that have been used in numerous studies to date. This work opens a promising path to overcome the instability of perovskites including of organic amine cations.

Band-Edge Orbital Engineering of Perovskite Semiconductors for Optoelectronic Applications

Lead (Pb) halide perovskites have achieved great success in recent years because of their excellent optoelectronic properties, which is largely attributed to the lone-pair s orbital-derived antibonding states at the valence band edge. Guided by the key band-edge orbital character, a series of ns²-containing (i.e., Sn²⁺, Sb³⁺, and Bi³⁺) Pb-free perovskite alternatives have been explored as potential photovoltaic candidates. On the other hand, based on the band-edge orbital components (i.e., M²⁺ s and p/X^- p orbitals), a series of strategies have been proposed to optimize their optoelectronic properties by modifying the atomic orbitals and orbital interactions. Therefore, understanding the band-edge electronic features from the recently reported halide perovskites is essential for future material design and device optimization. This Perspective first attempts to establish the band-edge orbital-property relationship using a chemically intuitive approach and then rationalizes their superior properties and explains the trends in electronic properties. We hope that this Perspective will provide atomic-level guidance and insights toward the rational design of perovskite semiconductors with outstanding optoelectronic properties.