Ab initio calculation of pentacene-PbSe hybrid interface for photovoltaic applications

Ab initio study of mechanical and thermal properties of GeTe-based and PbSe-based high-entropy chalcogenides

GeTe-based and PbSe-based high-entropy compounds have outstanding thermoelectric (TE) performance and crucial applications in mid and high temperatures. Recently, the optimization of TE performance of high-entropy compounds has been focused on reducing thermal conductivity by strengthening the phonon scattering process to improve TE performance. We report a first-principles investigation on nine GeTe-based high-entropy chalcogenide solid solutions constituted of eight metallic elements (Ag, Pb, Sb, Bi, Cu, Cd, Mn, and Sn) and 13 PbSe-based high-entropy chalcogenide solid solutions: Pb0.99-ySb0.012SnySe1-2xTexSx (x = 0.1, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, and y = 0) and Pb0.99-ySb0.012SnySe1-2xTexSx (y = 0.05, 0.1, 0.15, 0.2, 0.25 and x = 0.25). We have investigated the mechanical properties focusing on Debye temperature (ΘD), thermal conductivity (κ), Grüneisen parameter (γα), dominant phonon wavelength (λdom), and melting temperature (Tm). We find that the lattice thermal conductivity is significantly reduced when GeTe is alloyed into the following compositions: Ge0.75Sb0.13Pb0.12Te, Ge0.61Ag0.11Sb0.13Pb0.12Bi0.01Te, and Ge0.61Ag0.11Sb0.13Pb0.12Mn0.05Bi0.01Te. This reduction is due to the mass increase and strain fluctuations. The results also show that Ge0.61Ag0.11Sb0.13Pb0.12Bi0.01Te solid solution has the lowest Young's modulus (30.362 GPa), bulk and shear moduli (18.626 and 12.359 GPa), average sound velocity (1653.128 m/sec), Debye temperature (151.689 K), lattice thermal conductivity (0.574 W.m-1.K-1), dominant phonon wavelength (0.692 Å), and melting temperature (535.91 K). Moreover, Ge0.61Ag0.11Sb0.13Pb0.12Bi0.01Te has the highest Grüneisen parameter with a reduced and temperature-independent lattice thermal conductivity. The positive correlation between ΘD and κ is revealed. Alloying of PbSe-based high-entropy by Sb, Sn, Te, and S atoms at the Se and Pb sites resulted in much higher shear strains resulted in the reduction of phonon velocity, a reduced ΘD, and a lower lattice thermal conductivity.

Semiconducting Chalcogenide Alloys Based on the (Ge, Sn, Pb) (S, Se, Te) Formula with Outstanding Properties: A First-Principles Calculation Study

Very recently, a new class of the multicationic and -anionic entropy-stabilized chalcogenide alloys based on the (Ge, Sn, Pb) (S, Se, Te) formula has been successfully fabricated and characterized experimentally [Zihao Deng et al., Chem. Mater. 32, 6070 (2020)]. Motivated by the recent experiment, herein, we perform density functional theory-based first-principles calculations in order to investigate the structural, mechanical, electronic, optical, and thermoelectric properties. The calculations of the cohesive energy and elasticity parameters indicate that the alloy is stable. Also, the mechanical study shows that the alloy has a brittle nature. The GeSnPbSSeTe alloy is a semiconductor with a direct band gap of 0.4 eV (0.3 eV using spin-orbit coupling effect). The optical analysis illustrates that the first peak of Im(ε) for the GeSnPbSSeTe alloy along all polarization directions is located in the visible range of the spectrum which renders it a promising material for applications in optical and electronic devices. Interestingly, we find an optically anisotropic character of this system which is highly desirable for the design of polarization-sensitive photodetectors. We have accurately predicted the thermoelectric coefficients and have calculated a large power factor value of 3.7 × 10¹¹ W m^-1 K^-2 s^-1 for p-type. The high p-type power factor is originated from the multiple valleys near the valence band maxima. The anisotropic results of the optical and transport properties are related to the specific tetragonal alloy unit cell.

DFT calculations reveal pronounced HOMO-LUMO spatial separation in polypyrrole-nanodiamond systems

The low-cost efficient generation of renewable energy and its blending with societal lifestyle is becoming increasingly pervasive. Diamond-based inorganic-organic hybrid systems may have an immense, yet still mostly unexplored, potential in photovoltaic solar cells applications. In this work, we study the interactions of polypyrrole (PPy) with diamond nanoparticles (so-called nanodiamonds, NDs) by computational density functional theory (DFT) methods. We compute the structural and electronic properties of such hybrid organic-inorganic systems. During modeling, PPy is chemisorbed and physisorbed on (111) and (100) ND edge-like surface slabs terminated with oxygen, hydroxyl, carboxyl, and anhydride functional groups, i.e., in the arrangements most commonly found in real NDs. Moreover, NDs terminated with an amorphous surface layer (a-C:H, a-C:O) are considered to approach realistic conditions even further. In a predominant number of cases, we obtain the spatial separation of HOMO and LUMO at the interface, facilitating exciton dissociation. Further, there is a favorable energy level alignment for charge transport. The theoretical results, therefore, show the promising potential of PPy-ND composites in photovoltaic applications.

Hybrid density functional study on the electronic structures and properties of P3HT-PbS and P3HT-CdS hybrid interface for photovoltaic applications

The efficiency of charge transport mainly depends on the interfacial energy level alignment between the conjugated polymer and the inorganic substrate. It provides an accurate understanding, predicting as well as controlling the optimal power conversion efficiency of various type of hybrid photovoltaic systems. In this article, we use hybrid functional (HSE06) to study the electronic structures and properties at the interface of poly(3-hexylthiophene)(P3HT)/CdS and P3HT/PbS for solar cell applications. We found that the dangling bonds at the inorganic surface introduce in-gap states and greatly reduce the device performance. We used pseudo-hydrogen atoms as the passivation agent to remove the dangling bonds and eliminate the in-gap states to construct the energy alignment at the hybrid interface. The calculated interfacial density of states reveal a better performance in P3HT/CdS, compared to P3HT/PbS. P3HT/CdS possesses a LUMO_P3HT /CBM_CdS and HOMO_P3HT /VBM_CdS energy offset large enough for sufficient exciton separation across the interface and prevents charge recombination. In contrast, the reason for low power conversion efficiency in P3HT/PbS lies on its HOMO_P3HT /VBM_PbS offset which is too small to break the exciton binding energy for charge separation. Moreover, we reported the dependency of the energy level alignment and open circuit voltage on the interfacial molecular orientations. Our DFT calculation can be used to predict candidate materials for the development of efficiency optoelectronic devices. © 2018 Wiley Periodicals, Inc.