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Sengupta J, Hussain CM. Two-dimensional silicene-based technologies in oncology: an emerging avenue. NANOSCALE 2024; 16:20048-20059. [PMID: 39397565 DOI: 10.1039/d4nr03565h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/15/2024]
Abstract
Silicene, a two-dimensional allotrope of silicon, has attracted considerable attention due to its distinctive electronic, mechanical, and biochemical properties. This review critically examines the emerging applications of silicene in oncology, emphasising its potential roles in cancer therapy and research. Silicene exhibits exceptional biocompatibility and surface reactivity, positioning it as a promising candidate for oncological applications. This review addresses the current challenges and limitations in the clinical translation of silicene-based technologies, including issues of stability, toxicity, and scalable production. By synthesizing recent research findings, this review aims to provide an assessment of silicene's potential contributions to oncology and delineate future research trajectories in this innovative field.
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Affiliation(s)
- Joydip Sengupta
- Department of Electronic Science, Jogesh Chandra Chaudhuri College, Kolkata - 700033, India.
| | - Chaudhery Mustansar Hussain
- Department of Chemistry and Environmental Science, New Jersey Institute of Technology, Newark, 07102, New Jersey, USA.
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2
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Kondratev OA, Tokmachev AM, Storchak VG. Emerging 2D Ferromagnetism in Graphenized GdAlSi. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402189. [PMID: 38973106 DOI: 10.1002/smll.202402189] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Revised: 06/18/2024] [Indexed: 07/09/2024]
Abstract
2D magnets are expected to give new insights into the fundamentals of magnetism, host novel quantum phases, and foster development of ultra-compact spintronics. However, the scarcity of 2D magnets often makes a bottleneck in the research efforts, prompting the search for new magnetic systems and synthetic routes. Here, an unconventional approach is adopted to the problem, graphenization - stabilization of layered honeycomb materials in the 2D limit. Tetragonal GdAlSi, stable in the bulk, in ultrathin films gives way to its layered counterpart - graphene-like anionic AlSi layers coupled to Gd cations. A series of inch-scale films of layered GdAlSi on silicon is synthesized, down to a single monolayer, by molecular beam epitaxy. Graphenization induces an easy-plane ferromagnetic order in GdAlSi. The magnetism is controlled by low magnetic fields, revealing its 2D nature. Remarkably, it exhibits a non-monotonic evolution with the number of monolayers. The results provide a fresh platform for research on 2D magnets by design.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
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Averyanov DV, Sokolov IS, Parfenov OE, Taldenkov AN, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Thickness-Dependent Superconductivity in a Layered Electride on Silicon. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302065. [PMID: 37259278 DOI: 10.1002/smll.202302065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Revised: 05/04/2023] [Indexed: 06/02/2023]
Abstract
Layered materials exhibit a plethora of fascinating properties. The challenge is to make the materials into epitaxial films, preferably integrated with mature technological platforms to facilitate their potential applications. Progress in this direction can establish the film thickness as a valuable parameter to control various phenomena, superconductivity in particular. Here, a synthetic route to epitaxial films of SrAlSi, a layered superconducting electride, on silicon is designed. A set of films ranging in thickness is synthesized employing a silicene-based template. Their structure and superconductivity are explored by a combination of techniques. Two regimes of TC dependence on the film thickness are identified, the coherence length being the crossover parameter. The results can be extended to syntheses of other honeycomb-lattice ternary compounds on Si or Ge exhibiting superconducting, magnetic, and other properties.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Exchange Bias State at the Crossover to 2D Ferromagnetism. ACS NANO 2022; 16:19482-19490. [PMID: 36278843 DOI: 10.1021/acsnano.2c09452] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The inherent malleability of 2D magnetism provides access to unconventional quantum phases, in particular those with coexisting magnetic orders. Incidentally, in a number of materials, the magnetic state in the bulk undergoes a fundamental change when the system is pushed to the monolayer limit. Therefore, a competition of magnetic states can be expected in the crossover region. Here, an exchange bias state is observed at the crossover from 3D antiferromagnetism to 2D ferromagnetism driven by the number of monolayers in the metalloxene GdSi2. The material constitutes a stack of alternating monolayers of Gd and silicene, the Si analogue of graphene. The exchange bias manifests itself as a shift of the hysteresis loop signifying coupling of magnetic systems, as evidenced by magnetization studies. Two features distinguish the phenomenon: (i) it is intrinsic, i.e. it is detected in an individual compound; (ii) the exchange bias field, 1.5 kOe, is unusually high, which is conducive to applications. The results suggest magnetic derivatives of 2D-Xenes to be prospective materials for ultracompact spintronics.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
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Parfenov OE, Taldenkov AN, Averyanov DV, Sokolov IS, Kondratev OA, Borisov MM, Yakunin SN, Karateev IA, Tokmachev AM, Storchak VG. Layer-controlled evolution of electron state in the silicene intercalation compound SrSi 2. MATERIALS HORIZONS 2022; 9:2854-2862. [PMID: 36056695 DOI: 10.1039/d2mh00640e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Silicene, a Si-based analogue of graphene, holds a high promise for electronics because of its exceptional properties but a high chemical reactivity makes it a very challenging material to work with. The silicene lattice can be stabilized by active metals to form stoichiometric compounds MSi2. Being candidate topological semimetals, these materials provide an opportunity to probe layer dependence of unconventional electronic structures. It is demonstrated here that in the silicene compound SrSi2, the number of monolayers controls the electronic state. A series of films ranging from bulk-like multilayers down to a single monolayer have been synthesized on silicon and characterized with a combination of techniques - from electron and X-ray diffraction to high-resolution electron microscopy. Transport measurements reveal evolution of the chiral anomaly in bulk SrSi2 to weak localization in ultrathin films down to 3 monolayers followed by 3D and 2D strong localization in 2 and 1 monolayers, respectively. The results outline the range of stability of the chiral state, important for practical applications, and shed light on the localization phenomena in the limit of a few monolayers.
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Affiliation(s)
- Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Mikhail M Borisov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Sergey N Yakunin
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
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Yang G, Chai JS, Bu K, Xu LF, Wang JT. Structural, magnetic, and electronic properties of EuSi2 thin films on Si(111) surface. Phys Chem Chem Phys 2022; 24:6782-6787. [DOI: 10.1039/d1cp05913k] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Searching for magnetic silicide thin films has long been a hot topic in condensed matter physics and materials science based on its fundamental physics and promising device applications. Here we...
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Molle A, Grazianetti C, Tao L, Taneja D, Alam MH, Akinwande D. Silicene, silicene derivatives, and their device applications. Chem Soc Rev 2018; 47:6370-6387. [PMID: 30065980 DOI: 10.1039/c8cs00338f] [Citation(s) in RCA: 105] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Silicene, the ultimate scaling of a silicon atomic sheet in a buckled honeycomb lattice, represents a monoelemental class of two-dimensional (2D) materials similar to graphene but with unique potential for a host of exotic electronic properties. Nonetheless, there is a lack of experimental studies largely due to the interplay between material degradation and process portability issues. This review highlights the state-of-the-art experimental progress and future opportunities in the synthesis, characterization, stabilization, processing and experimental device examples of monolayer silicene and its derivatives. The electrostatic characteristics of the Ag-removal silicene field-effect transistor exhibit ambipolar charge transport, corroborating with theoretical predictions on Dirac fermions and Dirac cone in the band structure. The electronic structure of silicene is expected to be sensitive to substrate interaction, surface chemistry, and spin-orbit coupling, holding great promise for a variety of novel applications, such as topological bits, quantum sensing, and energy devices. Moreover, the unique allotropic affinity of silicene with single-crystalline bulk silicon suggests a more direct path for the integration with or revolution to ubiquitous semiconductor technology. Both the materials and process aspects of silicene research also provide transferable knowledge to other Xenes like stanene, germanene, phosphorene, and so forth.
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Affiliation(s)
- Alessandro Molle
- Consiglio Nazionale delle Ricerche (CNR), Istituto per la Microelettronica e Microsistemi (IMM), unit of Agrate Brianza, via C. Olivetti 2, 20864 Agrate Brianza, MB, Italy.
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Krawiec M. Functionalization of group-14 two-dimensional materials. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:233003. [PMID: 29708504 DOI: 10.1088/1361-648x/aac149] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp2 and sp3 orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.
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Affiliation(s)
- Mariusz Krawiec
- Institute of Physics, Maria Curie-Sklodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
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Tokmachev AM, Averyanov DV, Parfenov OE, Taldenkov AN, Karateev IA, Sokolov IS, Kondratev OA, Storchak VG. Emerging two-dimensional ferromagnetism in silicene materials. Nat Commun 2018; 9:1672. [PMID: 29700295 PMCID: PMC5920055 DOI: 10.1038/s41467-018-04012-2] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2017] [Accepted: 03/26/2018] [Indexed: 11/08/2022] Open
Abstract
The appeal of ultra-compact spintronics drives intense research on magnetism in low-dimensional materials. Recent years have witnessed remarkable progress in engineering two-dimensional (2D) magnetism via defects, edges, adatoms, and magnetic proximity. However, intrinsic 2D ferromagnetism remained elusive until recent discovery of out-of-plane magneto-optical response in Cr-based layers, stimulating the search for 2D magnets with tunable and diverse properties. Here we employ a bottom-up approach to produce layered structures of silicene (a Si counterpart of graphene) functionalized by rare-earth atoms, ranging from the bulk down to one monolayer. We track the evolution from the antiferromagnetism of the bulk to intrinsic 2D in-plane ferromagnetism of ultrathin layers, with its characteristic dependence of the transition temperature on low magnetic fields. The emerging ferromagnetism manifests itself in the electron transport. The discovery of a class of robust 2D magnets, compatible with the mature Si technology, is instrumental for engineering new devices and understanding spin phenomena.
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Affiliation(s)
- Andrey M Tokmachev
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Dmitry V Averyanov
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Oleg E Parfenov
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Alexander N Taldenkov
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Igor A Karateev
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Ivan S Sokolov
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Oleg A Kondratev
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia
| | - Vyacheslav G Storchak
- National Research Centre "Kurchatov Institute", Kurchatov Sq. 1, Moscow, 123182, Russia.
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Tokmachev AM, Averyanov DV, Karateev IA, Parfenov OE, Kondratev OA, Taldenkov AN, Storchak VG. Magnetically intercalated multilayer silicene. EPJ WEB OF CONFERENCES 2018. [DOI: 10.1051/epjconf/201818501010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Silicene, a Si-based analogue of graphene, is predicted to exhibit topological electronic phases with exotic properties capable to revolutionize electronics. In particular, the silicene structure is highly advantageous for spintronics. However, lack of synthetic routes to free-standing and magnetically functionalized silicene compounds prevents experimental corroboration of the predictions. Here we synthesize EuSi2, multilayer silicene intercalated with inherently magnetic Eu atoms, on SrSi2/Si(001) templates. The resulting films are formed by crystallites of two mutually orthogonal orientations. The structure is firmly established with electron diffraction, X-ray diffraction and electron microscopy. The compound EuSi2 exhibits non-trivial magnetic and transport properties. The data are compared with those for EuSi2 films grown on SrSi2/Si(111) templates.
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