Black or red phosphorus yields the same blue phosphorus film

After the discovery of graphene, many other 2D materials have been predicted theoretically and successfully prepared. In this context, single-sheet black phosphorus - phosphorene - is emerging as a viable contender in the field of (2D) semiconductors. Phosphorene offers high carrier mobility and an anisotropic structure that gives rise to a modulation of physical and chemical properties. This opens the way to many novel and fascinating applications related to field-effect transistors and optoelectronic devices. In previous studies, a single layer of blue phosphorene intermixed with Au atoms was grown using purified black phosphorus as a precursor. Starting from the observation that phosphorus vapor mainly consists of P clusters, in this work we aimed at obtaining blue phosphorus using much less expensive purified red phosphorus as an evaporant. By means of microscopy, spectroscopy and diffraction experiments, we show that black or red phosphorus deposition on Au(111) substrates yields the same blue phosphorus film.

Structural modification enhances the optoelectronic properties of defect blue phosphorene thin films

Active enhancement of the optical absorption coefficient to improve the light converting efficiency of thin-film solar cell materials is crucial to develop the next-generation solar cell devices. Here we report first-principles calculations with generalized gradient approximation to study the optoelectronic properties of pristine and divacancy (DV) blue phosphorene (BlueP) thin films under structural deformation. We show that instead of formingsp-like covalent bonds as in the pristine BlueP layer, a DV introduces two particular dangling bonds between the voids. Using a microscopic (non-) affine deformation model, we reveal that the orbital hybridization of these dangling bonds is strongly modified in both the velocity and vorticity directions depending on the type of deformation, creating an effective light trap to enhance the material absorption efficiency. Furthermore, this successful light trap is complemented by a clear signature ofσ+πplasmon when a DV BlueP layer is slightly compressive. These results demonstrate a practical approach to tailor the optoelectronic properties of low-dimensional materials and to pave a novel strategy to design functionalized solar cell devices from the bottom-up with selective defects.

Engineering 2D Materials for Photocatalytic Water-Splitting from a Theoretical Perspective

Splitting of water with the help of photocatalysts has gained a strong interest in the scientific community for producing clean energy, thus requiring novel semiconductor materials to achieve high-yield hydrogen production. The emergence of 2D nanoscale materials with remarkable electronic and optical properties has received much attention in this field. Owing to the recent developments in high-end computation and advanced electronic structure theories, first principles studies offer powerful tools to screen photocatalytic systems reliably and efficiently. This review is organized to highlight the essential properties of 2D photocatalysts and the recent advances in the theoretical engineering of 2D materials for the improvement in photocatalytic overall water-splitting. The advancement in the strategies including (i) single-atom catalysts, (ii) defect engineering, (iii) strain engineering, (iv) Janus structures, (v) type-II heterostructures (vi) Z-scheme heterostructures (vii) multilayer configurations (viii) edge-modification in nanoribbons and (ix) the effect of pH in overall water-splitting are summarized to improve the existing problems for a photocatalytic catalytic reaction such as overcoming large overpotential to trigger the water-splitting reactions without using cocatalysts. This review could serve as a bridge between theoretical and experimental research on next-generation 2D photocatalysts.

Strain modulating electronic band gaps and SQ efficiencies of semiconductor 2D PdQ2 (Q = S, Se) monolayer

We studied the physical, electronic transport and optical properties of a unique pentagonal PdQ2 (Q = S, Se) monolayers. The dynamic stability of 2Dwrinkle like-PdQ2 is proven by positive phonon frequencies in the phonon dispersion curve. The optimized structural parameters of wrinkled pentagonal PdQ2 are in good agreement with the available experimental results. The ultimate tensile strength (UTHS) was calculated and found that, penta-PdS2 monolayer can withstand up to 16% (18%) strain along x (y) direction with 3.44 GPa (3.43 GPa). While, penta-PdSe2 monolayer can withstand up to 17% (19%) strain along x (y) dirrection with 3.46 GPa (3.40 GPa). It is found that, the penta-PdQ2 monolayers has the semiconducting behavior with indirect band gap of 0.94 and 1.26 eV for 2D-PdS2 and 2D-PdSe2, respectively. More interestingly, at room temperacture, the hole mobilty (electron mobility) obtained for 2D-PdS2 and PdSe2 are 67.43 (258.06) cm2 V-1 s-1 and 1518.81 (442.49) cm2 V-1 s-1, respectively. In addition, I-V characteristics of PdSe2 monolayer show strong negative differential conductance (NDC) region near the 3.57 V. The Shockly-Queisser (SQ) effeciency prameters of PdQ2 monolayers are also explored and the highest SQ efficeinciy obtained for PdS2 is 33.93% at -5% strain and for PdSe2 is 33.94% at -2% strain. The penta-PdQ2 exhibits high optical absorption intensity in the UV region, up to 4.04 × 105 (for PdS2) and 5.28 × 105 (for PdSe2), which is suitable for applications in optoelectronic devices. Thus, the ultrathin PdQ2 monolayers could be potential material for next-generation solar-cell applications and high performance nanodevices.

The spin-polarized edge states of blue phosphorene nanoribbons induced by electric field and electron doping

Edge states of various two-dimensional materials such as graphene are intrinsically spin-polarized. In other materials, electric field and charge doping are required for introducing magnetism to their edges. In this work, by using first-principles calculations, we studied the effects of transverse electric field on the edge states of the armchair blue phosphorene nanoribbon (ABPNR), and found that a transverse electric field drives the edge electronic state occupied and at the same time spin-polarized. We also doped electrons to the ABPNR and found that these additional electrons occupy and spin-polarize the electronic states of both edges of the nanoribbon.

Exploring adsorption behavior of ethylene dichloride and dibromide vapors on blue phosphorene nanosheets: A first-principles acumens

The interrelation of toxic vapors ethylene dichloride (EDC) and ethylene dibromide (EDB) with the sensory base material blue phosphorene nanosheet (BLPNS) is studied using ab-initio method. The formational stability of BLPNS is ensured by the negative value of formation energy. Prior to the adsorption studies, we calculated the formation energy of BLPNS to ensure its stability, which is calculated to be -5.194eV/atom and found stable. The main motive behind the present work is to detect these toxic vapors using BLPNS. The intercommunication between the targeted vapors and the base material has been analyzed using the aid of adsorption energy, Bader charge transfer, energy band gap, and variation of band gap along with energy bands and DOS spectrum. The energy gap of isolated BLPNS is observed to be 1.621eV. However, the adsorption of EDC and EDB modulates the energy gap of BLPNS. The nature of assimilation is noticed to be of physisorption, which facilitates desorption of EDC and EDB molecules much easier. The successful outcome of the present research validates that BLPNS can be deployed as a prominent sensor for detection of EDC and EDB effectively.

Tunable gap in stable arsenene nanoribbons opens the door to electronic applications

Arsenic has been predicted to present significantly more diverse 2D phases than other elemental compounds like graphene. While practical applications must be based on finite arsenene samples, like nanoribbons, theory has so far focused on the infinite sheet. Our ab initio simulations show the clear contrast between the properties of arsenene nanoribbons and those of the monolayer, ranging from phase stability to electronic structure. We include nanoribbons derived from the buckled, puckered and square/octagon structures of bulk arsenene. The flexibility afforded by different parent structures, widths and edge passivations leads to a rich variety of semiconducting structures with tunable gaps.

Reactive molecular dynamics simulations of the mechanical properties of various phosphorene allotropes

Although various phosphorene allotropes have been theoretically predicted to be stable at 0 K, the mechanical properties and fracture mechanism at room temperature remain unclear for many of them. We investigate through reactive molecular dynamics simulations at room temperature the mechanical properties of phosphorene allotropes including: five sheets with hexagonal structures (β-, γ-, δ-, θ-, and α-phosphorene), one sheet with 4-8 membered rings (4-8-P), and two sheets with 5-7 membered rings. High, moderate and slight anisotropies in their mechanical properties are observed, depending on their crystal structures. Their Young's moduli and tensile strength are approximately in the range from 7.3% through 25%, and from 8.6% through 22% of those of graphene, respectively. At the early stage of fracture, eye-shaped cracks are formed by local bond breaking and perpendicular to the tensile direction in hexagonal and 4-8-P sheets. Complete fractures take place with straight cracks in these hexagonal sheets under tension along the zigzag direction and under tension along the square edge direction in the 4-8-P sheet. Crack meandering and branching are observed during the tension of α-, β-, and γ-phosphorene along the armchair direction; and along the square diagonal direction in the 4-8-P sheet. Under uniaxial tension of two phosphorene sheets with 5-7 atom rings, 12 and 10 membered rings are formed by merging two neighbor heptagons, and a heptagon and its neighbor pentagon, respectively. These 12 and 10 membered rings coalesce subsequently, causing the failure of these two sheets. The results are of great importance in the design of these novel phosphorene allotropes.

Stability and carrier transport properties of phosphorene-based polymorphic nanoribbons

Few-layer black phosphorene has recently attracted significant interest in the scientific community. In this paper, we consider several polymorphs of phosphorene nanoribbons (PNRs) and employ deformation potential theory within the effective mass approximation, together with density functional theory, to investigate their structural, mechanical and electronic properties. The results show that the stability of a PNR strongly depends on the direction along which it can be cut from its 2D counterpart. PNRs also exhibit a wide range of line stiffnesses ranging from 6 × 10¹⁰ eV m^-1 to 18 × 10¹¹ eV m^-1, which has little dependence on the edge passivation. Likewise, the calculated electronic properties of PNRs show them to be either a narrow-gap semiconductor (E _g < 1 eV) or a wide-gap semiconductor (E _g > 1 eV). The carrier mobility of PNRs is found to be comparable to that of black phosphorene. Some of the PNRs show an n-type (p-type) semiconducting character owing to their higher electron (hole) mobility. Passivation of the edges leads to n-type ↔ p-type transition in many of the PNRs considered. The predicted novel characteristics of PNRs, with a wide range of mechanical and electronic properties, make them potentially suitable for use in nanoscale devices.

Electronic and optical properties of boron phosphide/blue phosphorus heterostructures

The dynamically stable boron-phosphide/blue-phosphorus heterostructures are a good UV absorber while being transparent in the visible region.

van der Waals heterostructures based on allotropes of phosphorene and MoSe2

The van der Waals heterostructures of allotropes of phosphorene (α- and β-P) with MoSe₂ (H-, T-, ZT- and SO-MoSe₂) are investigated in the framework of state-of-the-art density functional theory. The semiconducting heterostructures, β-P/H-MoSe₂ and α-P/H-MoSe₂, form anti-type structures with type I and type II band alignments, respectively, whose bands are tunable with an external electric field. α-P/ZT-MoSe₂ and α-P/SO-MoSe₂ form ohmic semiconductor-metal contacts while the Schottky barrier in β-P/T-MoSe₂ can be reduced to zero by an external electric field to form ohmic contacts which is useful to realize high-performance devices. Simulated STM images of the given heterostructures reveal that α-P can be used as a capping layer to differentiate between various allotropes of underlying MoSe₂. The dielectric response of the considered heterostructures is highly anisotropic in terms of lateral and vertical polarization. The tunable electronic and dielectric response of van der Waals phosphorene/MoSe₂ heterostructures may find potential applications in the fabrication of optoelectronic devices.

Size and strain tunable band alignment of black-blue phosphorene lateral heterostructures

Single-element lateral heterostructures composed of black and blue phosphorene are not only free from lattice mismatch but also exhibit rich physical properties related to the seamlessly stitched interfaces, providing the building blocks for designing atomically thin devices. Using first-principles calculations, we investigate the influence of interface structure, size effect and strain engineering on the electronic structure, effective masses and band alignment of black-blue phosphorene lateral heterostructures. The lateral heterostructure with an octatomic-ring interface presents a strong metallic feature due to the interface states, while a metal-semiconductor transition takes place in the system with a hexatomic-ring interface upon hydrogen passivation. Following a reciprocal scaling law, the band gap is tuned in a wide energy range by synchronously increasing the widths of black and blue phosphorene or by only widening that of black phosphorene. Moreover, type-II band alignment is observed in the width ranges of 2.0-3.1 nm and 3.7-4.2 nm, out of which it is type-I. However, the band gap and effective masses show small changes if only the width of blue phosphorene is altered. When the lateral heterostructure is tensile loaded, the effective mass ratio of hole to electron is enlarged by an order of magnitude at a strain of 4% along the zigzag direction. Meanwhile, the band alignment undergoes a crossover from type-I to type-II at a strain of 2%, facilitating efficient electron-hole separation for light detection and harvesting.