Voltage-induced modulation of the magnetic exchange in binuclear Fe(III) complex deposited on Au(111) surface

We present a complete computational study devoted to the deposition of a magnetic binuclear complex on a metallic surface, aimed to obtain insight into the interaction of magnetically coupled complexes with their supporting substrates, as well as their response to external electrical stimuli applied through a surface-molecule-STM molecular junction-like architecture. Our results not only show that the deposition is favorable in two of the four studied orientations, but also, that the magnetic coupling is only slightly perturbed once the complex is adsorbed. We observe that the effects of the applied bias voltage on the magnetic coupling strongly depend on the molecule orientation with respect to the surface and the voltage polarity. Further analysis shows that this behavior is attributable to the stabilization/destabilization of the d-type singly occupied orbitals of the iron centers, reinforced by the strong local electric fields and induced charge densities only present in certain orientations of the deposited molecule and applied voltage polarity.

Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits

Graphene Hall elements (GHEs) have been demonstrated to be promising magnetic field sensors with excellent sensitivity, linearity, temperature stability, and compatibility with complementary-metal-oxide-semiconductor (CMOS)-integrated circuits (ICs). However, the demonstrated GHEs have still not exhibited a comprehensive advantage in performance over commercial integrated Hall sensors which were implemented in integrated Hall element and CMOS processing ICs. In this work, we develop a technology for the three-dimensional (3D) heterogeneous integration of silicon-based CMOS ICs and GHEs, and the fabricated magnetic field sensors outperform commercial high-end integrated Hall sensors. Specifically, the integrated Hall sensors are implemented in a stacked integration on Si based on a chopper programmable-gain amplifier (CPGA), a chopper-stabilized second-order sigma-delta modulator (CSDM), and graphene-based Hall elements on monochips. GHEs with high sensitivity (up to 1000 A/VT) are fabricated with a compatible process on a smoothened silicon nitride passivation layer of silicon-based CMOS ICs, and the two device layers are connected by an interlayer. The heterogeneous integrated Hall ICs exhibit current and voltage magnetic sensitivities up to 64 000 A/VT and 6.12 V/VT, respectively, which are much higher than those in all other reported nanomaterial-based Hall sensors and even in high-end commercial Hall ICs. Furthermore, the 3D heterogeneous integration technology used here can be extended as a universal technology for integrating nanomaterial-based sensors and Si CMOS ICs.

Manipulation of Molecular Spin State on Surfaces Studied by Scanning Tunneling Microscopy

The adsorbed magnetic molecules with tunable spin states have drawn wide attention for their immense potential in the emerging fields of molecular spintronics and quantum computing. One of the key issues toward their application is the efficient controlling of their spin state. This review briefly summarizes the recent progress in the field of molecular spin state manipulation on surfaces. We focus on the molecular spins originated from the unpaired electrons of which the Kondo effect and spin excitation can be detected by scanning tunneling microscopy and spectroscopy (STM and STS). Studies of the molecular spin-carriers in three categories are overviewed, i.e., the ones solely composed of main group elements, the ones comprising 3d-metals, and the ones comprising 4f-metals. Several frequently used strategies for tuning molecular spin state are exemplified, including chemical reactions, reversible atomic/molecular chemisorption, and STM-tip manipulations. The summary of the successful case studies of molecular spin state manipulation may not only facilitate the fundamental understanding of molecular magnetism and spintronics but also inspire the design of the molecule-based spintronic devices and materials.

Understanding and Mapping Sensitivity in MoS2 Field-Effect-Transistor-Based Sensors

Sensors based on two-dimensional (2D) field-effect transistors (FETs) are extremely sensitive and can detect charged analytes with attomolar limits of detection (LOD). Despite some impressive LODs, the operating mechanisms and factors that determine the signal-to-noise ratio in 2D FET-based sensors remain poorly understood. These uncertainties, coupled with an expansive design space for sensor layout and analyte positioning, result in a field with many reported highlights but limited collective progress. Here, we provide insight into sensing mechanisms of 2D molybdenum disulfide (MoS₂) FETs by realizing precise control over the position and charge of an analyte using a customized atomic force microscope (AFM), with the AFM tip acting as an analyte. The sensitivity of the MoS₂ FET channel is revealed to be nonuniform, manifesting sensitive hotspots with locations that are stable over time. When the charge of the analyte is varied, an asymmetry is observed in the device drain-current response, with analytes acting to turn the device off leading to a 2.5× increase in the signal-to-noise ratio (SNR). We developed a numerical model, applicable to all FET-based charge-detection sensors, that confirms our experimental observation and suggests an underlying mechanism. Further, extensive characterization of a set of different MoS₂ FETs under various analyte conditions, coupled with the numerical model, led to the identification of three distinct SNRs that peak with dependence on the layout and operating conditions used for a sensor. These findings reveal the important role of analyte position and coverage in determining the optimal operating bias conditions for maximal sensitivity in 2D FET-based sensors, which provides key insights for future sensor design and control.

Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating

The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available graphene-on-SiO₂ wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption.

Pharmacokinetics study of isorhamnetin in rat plasma by a sensitive electrochemical sensor based on reduced graphene oxide

A sensitive voltammetric method was developed for the determination of isorhamnetin and its pharmacokinetics investigation.