1
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Casalegno M, Provenzano S, Raos G, Moret M. Exploring the phase behavior of C8-BTBT-C8 at ambient and high temperatures: insights and challenges from molecular dynamics simulations. Phys Chem Chem Phys 2024; 26:21990-22005. [PMID: 39109422 DOI: 10.1039/d4cp01884b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
C8-BTBT-C8 is one promising candidate for the development of high-performance electronic devices based on thin-film technologies. Its monoclinic polymorph has a well-established role in thin-film growth. Yet, quite little information is available about its dynamics on the molecular scale, and the structures of the mesophases which form at high temperature (about 100 K above ambient temperature). The present study is devoted to the analysis of such phases, with the ultimate goal of developing molecular models. Already at ambient temperature, our molecular dynamics simulations reveal a rich conformational behavior of the alkyl side chains, with gauche conformations as leading structural defects. Heating promotes the formation of a stacking faulted mesophase (380 K), and a smectic phase, at 385 K, upon side chain melting. Although more disordered, this phase bears several analogies with the smectic A phase, experimentally observed at 382.5 K. At higher temperatures, the increase in configurational disorder is brought by molecular diffusion and other phenomena, finally leading to an isotropic molten phase. Our in-depth analysis, complemented by hot-stage polarizing microscopy data, provides interesting insights into this material, highlighting the challenges associated with the modeling of soft semiconducting systems.
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Affiliation(s)
- Mosè Casalegno
- Department of Chemistry, Materials and Chemical Engineering "G. Natta", Politecnico di Milano, via L. Mancinelli 7, 20131 Milano, Italy.
| | | | - Guido Raos
- Department of Chemistry, Materials and Chemical Engineering "G. Natta", Politecnico di Milano, via L. Mancinelli 7, 20131 Milano, Italy.
| | - Massimo Moret
- Department of Materials Science, Università degli Studi di Milano-Bicocca, Via R. Cozzi 55, 20125 Milano, Italy.
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2
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James AM, Greco A, Devaux F, McIntosh N, Brocorens P, Cornil J, Pandey P, Kunert B, Maini L, Geerts YH, Resel R. Memory Effect by Melt Crystallization Observed in Polymorphs of a Benzothieno-Benzothiophene Derivative. CRYSTAL GROWTH & DESIGN 2023; 23:8124-8131. [PMID: 37937189 PMCID: PMC10626567 DOI: 10.1021/acs.cgd.3c00847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/29/2023] [Indexed: 11/09/2023]
Abstract
This work provides a comprehensive illustration of a crystalline melt memory effect recorded for three solvates of the 2,7-bis(2-(2-methoxyethoxy)ethoxy)benzo[b]benzo[4,5] thieno[2,3-d]thiophene (OEG-BTBT) molecule with dichloromethane (DCM) molecules. Combined optical microscopy and X-ray diffraction measurements at different temperatures are used to get an overview of the structural and morphological properties like melting points, isotropic transition temperatures, induction times, and crystallization kinetics of the three forms. An outstanding observation is made upon annealing the three polymorphs at temperatures well above their respective melting points as well as above the optical clearance temperature. After cooling back to room temperature, recrystallization results in the formation of the initial phase present before the annealing process. This melt memory effect is observed for all three solvates. These observations can be correlated to the strong interaction between the DCM molecules and the oligoethylene glycol side chains, even in the molten state. This conclusion rationalizes the experimental observation made upon solvent vapor annealing of the crystalline sample with DCM, which unambiguously transformed the system into a disordered state.
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Affiliation(s)
- Ann Maria James
- Institute
of Solid State Physics, Graz University
of Technology, Petersgasse 16, 8010 Graz, Austria
| | | | - Félix Devaux
- Laboratoire
de Chimie des Polymères, Université
Libre de Bruxelles (ULB), 1050 Bruxelles, Belgium
| | - Nemo McIntosh
- Laboratory
for Chemistry of Novel Materials, University
of Mons, 7000 Mons, Belgium
| | - Patrick Brocorens
- Laboratory
for Chemistry of Novel Materials, University
of Mons, 7000 Mons, Belgium
| | - Jérôme Cornil
- Laboratory
for Chemistry of Novel Materials, University
of Mons, 7000 Mons, Belgium
| | - Priya Pandey
- Dipartimento
di Chimica “G. Ciamician”, University Bologna, 40126 Bologna, Italy
| | - Birgit Kunert
- Institute
of Solid State Physics, Graz University
of Technology, Petersgasse 16, 8010 Graz, Austria
| | - Lucia Maini
- Dipartimento
di Chimica “G. Ciamician”, University Bologna, 40126 Bologna, Italy
| | - Yves Henri Geerts
- Laboratoire
de Chimie des Polymères, Université
Libre de Bruxelles (ULB), 1050 Bruxelles, Belgium
- International
Solvay Institutes of Physics and Chemistry, Université Libre de Bruxelles, 1050 Bruxelles, Belgium
| | - Roland Resel
- Institute
of Solid State Physics, Graz University
of Technology, Petersgasse 16, 8010 Graz, Austria
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3
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Park W, Yun C, Yun S, Lee JJ, Bae S, Ho D, Earmme T, Kim C, Seo S. [1]Benzothieno[3,2-b][1]benzothiophene-based liquid crystalline organic semiconductor for solution-processed organic thin film transistors. J IND ENG CHEM 2022. [DOI: 10.1016/j.jiec.2022.07.005] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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4
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Hofer S, Unterkofler J, Kaltenegger M, Schweicher G, Ruzié C, Tamayo A, Salzillo T, Mas-Torrent M, Sanzone A, Beverina L, Geerts YH, Resel R. Molecular Disorder in Crystalline Thin Films of an Asymmetric BTBT Derivative. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2021; 33:1455-1461. [PMID: 33642680 PMCID: PMC7905871 DOI: 10.1021/acs.chemmater.0c04725] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Revised: 01/27/2021] [Indexed: 06/02/2023]
Abstract
The molecule 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) is an organic semiconductor with outstanding performance in thin-film transistors. The asymmetric shape of the molecule causes an unusual phase behavior, which is a result of a distinct difference in the molecular arrangement between the head-to-head stacking of the molecules versus head-to-tail stacking. Thin films are prepared at elevated temperatures by crystallization from melt under controlled cooling rates, thermal-gradient crystallization, and bar coating at elevated temperatures. The films are investigated using X-ray diffraction techniques. Unusual peak-broadening effects are found, which cannot be explained using standard models. The modeling of the diffraction patterns with a statistic variation of the molecules reveal that a specific type of molecular disorder is responsible for the observed peak-broadening phenomena: the known head-to-head stacking within the crystalline phase is disturbed by the statistic integration of reversed (or flipped) molecules. It is found that 7-15% of the molecules are integrated in a reversed way, and these fractions are correlated with cooling rates during the sample preparation procedure. Temperature-dependent in situ experiments reveal that the defects can be healed by approaching the transition from the crystalline state to the smectic E state at a temperature of 145 °C. This work identifies and quantifies a specific crystalline defect type within thin films of an asymmetric rodlike conjugated molecule, which is caused by the crystallization kinetics.
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Affiliation(s)
- Sebastian Hofer
- Institute
of Solid State Physics, Graz University of Technology, Petersgasse 16, Graz 8010, Austria
| | - Johanna Unterkofler
- Institute
of Solid State Physics, Graz University of Technology, Petersgasse 16, Graz 8010, Austria
| | - Martin Kaltenegger
- Institute
of Solid State Physics, Graz University of Technology, Petersgasse 16, Graz 8010, Austria
- Laboratoire
de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles, Campus Plaine, CP206/01 - Boulevard
du, Triomphe, Bruxelles 1050, Belgium
| | - Guillaume Schweicher
- Laboratoire
de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles, Campus Plaine, CP206/01 - Boulevard
du, Triomphe, Bruxelles 1050, Belgium
| | - Christian Ruzié
- Laboratoire
de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles, Campus Plaine, CP206/01 - Boulevard
du, Triomphe, Bruxelles 1050, Belgium
| | - Adrián Tamayo
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, Spain
| | - Tommaso Salzillo
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, Spain
| | - Marta Mas-Torrent
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, Spain
| | - Alessandro Sanzone
- Department
of Materials Science, University of Milano-Bicocca, Via Roberto Cozzi, 55, Milano 20125, Italy
| | - Luca Beverina
- Department
of Materials Science, University of Milano-Bicocca, Via Roberto Cozzi, 55, Milano 20125, Italy
| | - Yves Henry Geerts
- Laboratoire
de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles, Campus Plaine, CP206/01 - Boulevard
du, Triomphe, Bruxelles 1050, Belgium
- Laboratoire
de Chimie des Polymères, Faculté des Sciences, International
Solvay Institutes of Physics and Chemistry, Université Libre de Bruxelles, Campus Plaine, CP206/01 - Boulevard du Triomphe, Brussels 1050, Belgium
| | - Roland Resel
- Institute
of Solid State Physics, Graz University of Technology, Petersgasse 16, Graz 8010, Austria
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5
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Gueye MN, Vercouter A, Jouclas R, Guérin D, Lemaur V, Schweicher G, Lenfant S, Antidormi A, Geerts Y, Melis C, Cornil J, Vuillaume D. Thermal conductivity of benzothieno-benzothiophene derivatives at the nanoscale. NANOSCALE 2021; 13:3800-3807. [PMID: 33565562 DOI: 10.1039/d0nr08619c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We study by scanning thermal microscopy the nanoscale thermal conductance of films (40-400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-of-plane thermal conductivity is significant along the interlayer direction, larger for BTBT (0.63 ± 0.12 W m-1 K-1) compared to C8-BTBT-C8 (0.25 ± 0.13 W m-1 K-1). These results are supported by molecular dynamics calculations (approach to equilibrium molecular dynamics method) performed on the corresponding molecular crystals. The calculations point to significant thermal conductivity (3D-like) values along the 3 crystalline directions, with anisotropy factors between the crystalline directions below 1.8 for BTBT and below 2.8 for C8-BTBT-C8, in deep contrast with the charge transport properties featuring a two-dimensional character for these materials. In agreement with the experiments, the calculations yield larger values in BTBT compared to C8-BTBT-C8 (0.6-1.3 W m-1 K-1versus 0.3-0.7 W m-1 K-1, respectively). The weak thickness dependence of the nanoscale thermal resistance is in agreement with a simple analytical model.
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Affiliation(s)
- Magatte N Gueye
- Institute for Electronics Microelectronics and Nanotechnology (IEMN), CNRS, Av. Poincaré, Villeneuve d'Ascq, France.
| | - Alexandre Vercouter
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, Mons, Belgium.
| | - Rémy Jouclas
- Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050, Brussels, Belgium.
| | - David Guérin
- Institute for Electronics Microelectronics and Nanotechnology (IEMN), CNRS, Av. Poincaré, Villeneuve d'Ascq, France.
| | - Vincent Lemaur
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, Mons, Belgium.
| | - Guillaume Schweicher
- Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050, Brussels, Belgium.
| | - Stéphane Lenfant
- Institute for Electronics Microelectronics and Nanotechnology (IEMN), CNRS, Av. Poincaré, Villeneuve d'Ascq, France.
| | - Aleandro Antidormi
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193, Barcelona, Spain
| | - Yves Geerts
- Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, 1050, Brussels, Belgium. and International Solvay Institutes for Physics and Chemistry, Brussels, Belgium
| | - Claudio Melis
- Dipartimento di Fisica, Universita di Cagliari, Cittadella Universitaria, 09042 Monserrato (Ca), Italy
| | - Jérôme Cornil
- Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, Mons, Belgium.
| | - Dominique Vuillaume
- Institute for Electronics Microelectronics and Nanotechnology (IEMN), CNRS, Av. Poincaré, Villeneuve d'Ascq, France.
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6
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Bodlos WR, Mattiello S, Perinot A, Gigli L, Demitri N, Beverina L, Caironi M, Resel R. Cold Crystallization of the Organic n-Type Small Molecule Semiconductor 2-Decyl-7-phenyl-[1]benzothieno[3,2- b][1]benzothiophene S, S, S', S'-Tetraoxide. CRYSTAL GROWTH & DESIGN 2021; 21:325-332. [PMID: 33442331 PMCID: PMC7792511 DOI: 10.1021/acs.cgd.0c01157] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2020] [Revised: 11/17/2020] [Indexed: 06/12/2023]
Abstract
The asymmetric n-type Ph-BTBT-C10 derivative 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene S,S,S',S'-tetraoxide is structurally investigated in the thin film regime. After film preparation by spin coating and physical vapor deposition, a rather disordered structure is observed, with a strong change of its internal degree of order upon heating. At 95 °C, a transition into a layered structure of upright standing molecules without any in-plane order appears, and at 135 °C, crystallization takes place. This phase information is combined with surface morphological studies and charge carrier mobility measurements to describe the structure and thin film transistor applicability of this molecule.
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Affiliation(s)
- Wolfgang Rao Bodlos
- Institute
of Solid State Physics, Graz University
of Technology, Petersgasse 16, 8010 Graz, Austria
| | - Sara Mattiello
- Department
of Materials Science, Università
di Milano-Bicocca, Via Cozzi 55, 20125, Milan, Italy
| | - Andrea Perinot
- Center
for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, 20133 Milan, Italy
| | - Lara Gigli
- Elettra-Sincrotrone
Trieste, S.S. 14 Km 163.5 in Area Science Park, 34149 Basovizza-Trieste, Italy
| | - Nicola Demitri
- Elettra-Sincrotrone
Trieste, S.S. 14 Km 163.5 in Area Science Park, 34149 Basovizza-Trieste, Italy
| | - Luca Beverina
- Department
of Materials Science, Università
di Milano-Bicocca, Via Cozzi 55, 20125, Milan, Italy
| | - Mario Caironi
- Center
for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, 20133 Milan, Italy
| | - Roland Resel
- Institute
of Solid State Physics, Graz University
of Technology, Petersgasse 16, 8010 Graz, Austria
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7
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Babuji A, Temiño I, Pérez-Rodríguez A, Solomeshch O, Tessler N, Vila M, Li J, Mas-Torrent M, Ocal C, Barrena E. Double Beneficial Role of Fluorinated Fullerene Dopants on Organic Thin-Film Transistors: Structural Stability and Improved Performance. ACS APPLIED MATERIALS & INTERFACES 2020; 12:28416-28425. [PMID: 32460481 DOI: 10.1021/acsami.0c06418] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The present work assesses improved carrier injection in organic field-effect transistors by contact doping and provides fundamental insight into the multiple impacts that the dopant/semiconductor interface details have on the long-term and thermal stability of devices. We investigate donor [1]benzothieno[3,2-b]-[1]benzothiophene (BTBT) derivatives with one and two octyl side chains attached to the core, therefore constituting asymmetric (BTBT-C8) and symmetric (C8-BTBT-C8) molecules, respectively. Our results reveal that films formed out of the asymmetric BTBT-C8 expose the same alkyl-terminated surface as the C8-BTBT-C8 films do. In both cases, the consequence of depositing fluorinated fullerene (C60F48) as a molecular p-dopant is the formation of C60F48 crystalline islands decorating the step edges of the underlying semiconductor film surface. We demonstrate that local work function changes along with a peculiar nanomorphology lead to the double beneficial effect of lowering the contact resistance and providing long-term and enhanced thermal stability of the devices.
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Affiliation(s)
- Adara Babuji
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain
| | - Inés Temiño
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain
| | - Ana Pérez-Rodríguez
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain
| | - Olga Solomeshch
- Electrical Engineering Department, Nanoelectronic Center, Technion, 32000 Haifa, Israel
| | - Nir Tessler
- Electrical Engineering Department, Nanoelectronic Center, Technion, 32000 Haifa, Israel
| | - Maria Vila
- SpLine CRG BM25 Beamline, European Synchrotron Radiation Facility, 71, Avenue des Martyrs, 38000 Grenoble, France
- Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), 28049 Madrid, Spain
| | - Jinghai Li
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain
| | - Marta Mas-Torrent
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain
- CIBER-BBN, Campus UAB, 08193 Bellaterra, Spain
| | - Carmen Ocal
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain
| | - Esther Barrena
- Instituto de Ciencia de Materiales de Barcelona (ICMAB-CSIC), 08193 Bellaterra, Barcelona, Spain
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8
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Schweicher G, Garbay G, Jouclas R, Vibert F, Devaux F, Geerts YH. Molecular Semiconductors for Logic Operations: Dead-End or Bright Future? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905909. [PMID: 31965662 DOI: 10.1002/adma.201905909] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Revised: 11/18/2019] [Indexed: 05/26/2023]
Abstract
The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V-1 s-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.
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Affiliation(s)
- Guillaume Schweicher
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Guillaume Garbay
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Rémy Jouclas
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - François Vibert
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Félix Devaux
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Yves H Geerts
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
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9
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Schweicher G, D'Avino G, Ruggiero MT, Harkin DJ, Broch K, Venkateshvaran D, Liu G, Richard A, Ruzié C, Armstrong J, Kennedy AR, Shankland K, Takimiya K, Geerts YH, Zeitler JA, Fratini S, Sirringhaus H. Chasing the "Killer" Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902407. [PMID: 31512304 DOI: 10.1002/adma.201902407] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2019] [Revised: 07/17/2019] [Indexed: 06/10/2023]
Abstract
Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested.
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Affiliation(s)
- Guillaume Schweicher
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Gabriele D'Avino
- Institut Néel-CNRS and Université Grenoble Alpes, Boîte Postale 166, F-38042, Grenoble Cedex 9, France
| | - Michael T Ruggiero
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
- Department of Chemistry, University of Vermont, 82 University Place, Burlington, VT, 05405, USA
| | - David J Harkin
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Katharina Broch
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Deepak Venkateshvaran
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Guoming Liu
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Audrey Richard
- Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe CP206/01, 1050, Brussels, Belgium
| | - Christian Ruzié
- Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe CP206/01, 1050, Brussels, Belgium
| | - Jeff Armstrong
- ISIS Facility, Rutherford Appleton Laboratory, Harwell Oxford, Didcot, Oxfordshire, OX11 0QX, UK
| | - Alan R Kennedy
- Department of Pure and Applied Chemistry, University of Strathclyde, 295 Cathedral Street, Glasgow, G1 1XL, Scotland
| | - Kenneth Shankland
- School of Pharmacy, University of Reading, Whiteknights, Reading, RG6 6AD, UK
| | - Kazuo Takimiya
- Emergent Molecular Function Research Group, RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, Japan
| | - Yves H Geerts
- Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe CP206/01, 1050, Brussels, Belgium
| | - J Axel Zeitler
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK
| | - Simone Fratini
- Institut Néel-CNRS and Université Grenoble Alpes, Boîte Postale 166, F-38042, Grenoble Cedex 9, France
| | - Henning Sirringhaus
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
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10
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Mikayelyan E, Grodd L, Ksianzou V, Wesner D, Rodygin AI, Schönherr H, Luponosov YN, Ponomarenko SA, Ivanov DA, Pietsch U, Grigorian S. Phase Transitions and Formation of a Monolayer-Type Structure in Thin Oligothiophene Films: Exploration with a Combined In Situ X-ray Diffraction and Electrical Measurements. NANOSCALE RESEARCH LETTERS 2019; 14:185. [PMID: 31147864 PMCID: PMC6542962 DOI: 10.1186/s11671-019-3009-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2018] [Accepted: 05/08/2019] [Indexed: 06/09/2023]
Abstract
A combination of in situ electrical and grazing-incidence X-ray diffraction (GIXD) is a powerful tool for studies of correlations between the microstructure and charge transport in thin organic films. The information provided by such experimental approach can help optimizing the performance of the films as active layers of organic electronic devices. In this work, such combination of techniques was used to investigate the phase transitions in vacuum-deposited thin films of a common organic semiconductor dihexyl-quarterthiophene (DH4T). A transition from the initial highly crystalline phase to a mesophase was detected upon heating, while only a partial backward transition was observed upon cooling to room temperature. In situ electrical conductivity measurements revealed the impact of both transitions on charge transport. This is partly accounted for by the fact that the initial crystalline phase is characterized by inclination of molecules in the plane perpendicular to the π-π stacking direction, whereas the mesophase is built of molecules tilted in the direction of π-π stacking. Importantly, in addition to the two phases of DH4T characteristic of the bulk, a third interfacial substrate-stabilized monolayer-type phase was observed. The existence of such interfacial structure can have important implications for the charge mobility, being especially favorable for lateral two-dimensional charge transport in the organic field-effect transistors geometry.
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Affiliation(s)
- Eduard Mikayelyan
- Department of Physics, University of Siegen, Walter-Flex-Strasse 3, 57072 Siegen, Germany
| | - Linda Grodd
- Department of Physics, University of Siegen, Walter-Flex-Strasse 3, 57072 Siegen, Germany
| | - Viachaslau Ksianzou
- Department of Engineering and Natural Sciences, Technical University of Applied Sciences Wildau, Hochschulring 1, 15745 Wildau, Germany
| | - Daniel Wesner
- Physical Chemistry I, Department of Chemistry and Biology & Research Center of Micro and Nanochemistry and Engineering (Cμ), University of Siegen, Adolf-Reichwein-Strasse 2, 57076 Siegen, Germany
| | - Alexander I. Rodygin
- Faculty of Fundamental Physical and Chemical Engineering, Lomonosov Moscow State University, GSP-1, Leninskie gory1, Moscow, Russian Federation 119991
- Moscow Institute of Physics and Technology (State University), Institutskiy per. 9, Dolgoprudny, Russian Federation 141700
| | - Holger Schönherr
- Physical Chemistry I, Department of Chemistry and Biology & Research Center of Micro and Nanochemistry and Engineering (Cμ), University of Siegen, Adolf-Reichwein-Strasse 2, 57076 Siegen, Germany
| | - Yuriy N. Luponosov
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences, Profsoyuznaya st. 70, Moscow, Russian Federation 117393
| | - Sergei A. Ponomarenko
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences, Profsoyuznaya st. 70, Moscow, Russian Federation 117393
- Chemistry Department, Lomonosov Moscow State University, Leninskie Gory 1-3, Moscow, Russian Federation 119991
| | - Dimitri A. Ivanov
- Faculty of Fundamental Physical and Chemical Engineering, Lomonosov Moscow State University, GSP-1, Leninskie gory1, Moscow, Russian Federation 119991
- Moscow Institute of Physics and Technology (State University), Institutskiy per. 9, Dolgoprudny, Russian Federation 141700
- Institut de Sciences des Matériaux de Mulhouse (CNRS UMR 7361), 15 rue Jean Starcky, B.P 2488, 68057 Mulhouse, France
- Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russian Federation 142432
| | - Ullrich Pietsch
- Department of Physics, University of Siegen, Walter-Flex-Strasse 3, 57072 Siegen, Germany
| | - Souren Grigorian
- Department of Physics, University of Siegen, Walter-Flex-Strasse 3, 57072 Siegen, Germany
- Aix Marseille University, University of Toulon, CNRS, IM2NP, Campus de St-Jérôme, 13397 Marseille, France
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