Large valley splitting induced by spin-orbit coupling effects in monolayer W2NSCl

Two-dimensional (2D) valley materials are promising materials for writing and storing information. The search for 2D materials with large valley splitting is essential for the development of spintronics and valley electronics. In this study, we theoretically design 2D W2NSCl MXenes with large valley splitting based on first-principle calculations. Due to the strong spin-orbit coupling (SOC) and the broken inversion symmetry, the W2NSCl monolayer exhibits valley splitting values of 491 meV and 83 meV at K/K' of the valence and conduction bands, respectively. The valley splitting of W2NSCl is robust to biaxial strain. Because of the broken mirror symmetry of W2NSCl, there is a Rashba effect at Γ with a Rashba parameter of 1.019 V Å. Based on the maximum localization of the Wannier function, we found the non-zero Berry curvature at K/K'. Furthermore, the non-zero Berry curvature at the K/K' valley increases monotonically with an external strain from -4% to 4%. Our finding shows that W2NSCl is a candidate material for valley electronics and spintronics applications.

Half-integer anomalous currents in 2D materials from a QFT viewpoint

Charge carriers in Dirac/Weyl semi-metals exhibit a relativistic-like behavior. In this work we propose a novel type of intrinsic half-integer Quantum Hall effect in 2D materials, thereby also offering a topological protection mechanism for the current. Its existence is rooted in the 2D parity anomaly, without any need for a perpendicular magnetic field. We conjecture that it may occur in disturbed honeycomb lattices where both spin degeneracy and time reversal symmetry are broken. These configurations harbor two distinct gap-opening mechanisms that, when occurring simultaneously, drive slightly different gaps in each valley, causing a net anomalous conductivity when the chemical potential is tuned to be between the distinct gaps. Some examples of promising material setups that fulfill the prerequisites of our proposal are also listed to motivate looking for the effect at the numerical and experimental level.

Mott-Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy

A broad family of the nowadays studied low-dimensional systems, including 2D materials, demonstrate many fascinating properties, which however depend on the atomic composition as well as on the system dimensionality. Therefore, the studies of the electronic correlation effects in the new 2D materials is of paramount importance for the understanding of their transport, optical and catalytic properties. Here, by means of electron spectroscopy methods in combination with density functional theory calculations we investigate the electronic structure of a new layered van der Waals [Formula: see text] (X: S, Se) materials. Using systematic resonant photoelectron spectroscopy studies we observed strong resonant behavior for the peaks associated with the [Formula: see text] final state at low binding energies for these materials. Such observations clearly assign [Formula: see text] to the class of Mott-Hubbard type insulators for which the top of the valence band is formed by the hybrid Fe-S/Se electronic states. These observations are important for the deep understanding of this new class of materials and draw perspectives for their further applications in different application areas, like (opto)spintronics and catalysis.

Strain modulation of the spin-valley polarization in monolayer manganese chalcogenophosphates alloys

Inspired by the profound physical connotations and potential applications of the spintronics and valleytronics, two-dimensional (2D) monolayer manganese chalcogenophosphates alloys are constructed, and the strain modulated spin-valley characteristics are investigated through the first principles calculations. For both the MnFePS₃and MnFePSe₃, the conductivity can be tuned reversibly between semiconductive and half-metallic, while and magnetic stability is controllable between ferromagnetism and antiferromagnetism. Large valley splitting of up to 1000 meV is achieved in MnFePS₃under a -4% strain. Simultaneous spin splitting of 219 meV and valley splitting of 160 meV are acquired in MnFePS₃under a 4% strain. Strain tunable magnetic moment and interaction between Mn, Fe and S/Se atoms are revealed as the internal mechanisms of controlling the magnetic stability, spin and valley polarizations in the two structures. All the findings in this work provide a strategy for the manipulation of spin and valley degrees of freedom in 2D magnetic materials.

Electronic, magnetic and optical properties of MnPX3 (X = S, Se) monolayers with and without chalcogen defects: a first-principles study

Relative energy values (ΔE, in eV) as well as lattice parameters (in Å) for 3D MnPX₃ (X = S, Se) in different magnetic states obtained with PBE + U + D2.

Nonmetal-Atom-Doping-Induced Valley Polarization in Single-Layer Tl2O

Valleytronics that relies on the valley degree of freedom is attracting growing interest because it provides a new platform for information storage. One obstacle in this field is to realize valley polarization in an efficient route to manipulate the valley physics. Here we propose a strategy to induce valley polarization by nonmetal atom doping in single-layer Tl₂O. Owing to the intrinsic inversion asymmetry and large spin-orbit coupling, there are a two-fold valley degeneracy and an excellent spin-valley independence in single-layer Tl₂O. Upon introducing C/N atoms in single-layer Tl₂O, the intriguing valley polarization successfully appears, and the obtained polarization strengths are considerable. In particular, for N-doped case, the top valence band locates around the Fermi level, and there are no impurity states in the band gap, which is desirable for practical applications. It is predicted that these valley polarizations can be effectively engineered under the magnetic field and external strain, suggesting that the control of valley physics in single-layer Tl₂O is accessible.