Two-Dimensional Tunneling Memtransistor with Thin-Film Heterostructure for Low-Power Logic-in-Memory Complementary Metal-Oxide Semiconductor

With the demand for high-performance and miniaturized semiconductor devices continuously rising, the development of innovative tunneling transistors via efficient stacking methods using two-dimensional (2D) building blocks has paramount importance in the electronic industry. Hence, 2D semiconductors with atomically thin geometries hold significant promise for advancements in electronics. In this study, we introduced tunneling memtransistors with a thin-film heterostructure composed of 2D semiconducting MoS2 and WSe2. Devices with the dual function of tuning and memory operation were realized by the gate-regulated modulation of the barrier height at the heterojunction and manipulation of intrinsic defects within the exfoliated nanoflakes using solution processes. Further, our investigation revealed extensive edge defects and four distinct defect types, namely monoselenium vacancies, diselenium vacancies, tungsten vacancies, and tungsten adatoms, in the interior of electrochemically exfoliated WSe2 nanoflakes. Additionally, we constructed complementary metal-oxide semiconductor-based logic-in-memory devices with a small static power in the range of picowatts using the developed tunneling memtransistors, demonstrating a promising approach for next-generation low-power nanoelectronics.

Large thermoelectric transport in magnetically coupled CrI3/1T-MoS2vdW heterostructure via spin-charge interconversion

Low-dimensional materials with prominent thermoelectric (TE) effect play a pivotal role in realizing state-of-the-art nanoscale TE devices. The fusion of TE effect with the magnetism through seamless integration of TE and magnetic materials in the 2D limit offers access to control longitudinal as well as transverse TE properties via magnetic proximity effect. Herein, we design a van der Waals (vdW) heterostructure of metallic 1T-MoS2with promising TE properties and a layer-dependent magnetic CrI3material. The result highlights exotic electronic and magnetic configurations of the designed monolayer-CrI3/1T-MoS2vdW heterostructure, which show magnetically-coupled TE characteristics. The observed remarkable magnetic proximity stems from large magnetic anisotropy energy and spin polarization, which are found to be 2.21 meV Cr-1and 12.30%, respectively. To this end, the semiconducting CrI3layer with intrinsic magnetism leads to efficient control and tunability of the observed spin-correlated anomalous Nernst effect. Moreover, a large dimensionless figure of merit of ∼6 and a power factor of∼3.8×1011/τ∘ Wm-1K-2s-1near the Fermi level at 300 K endorse the rejuvenated TE effect. The strong relativistic spin-orbit coupling validates the significant correlation of TE properties with intrinsic magnetic configuration. The present study underscores the significance of the magnetic proximity-governed TE effect in vdW heterostructures to engineer low-dimensional TE devices.

Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Two-dimensional (2D) van der Waals materials in-plane anisotropy, caused by a low-symmetric lattice structure, has considerably increased their applications, particularly in thermoelectric. MoS2and MoS2/reduced graphene oxide (rGO) thin films were grown on SiO2/Si substrate by atmospheric chemical vapor deposition technique to study the thermoelectric performance. Few layered MoS2was confirmed by the vibrational analysis and the composition elements are confirmed by the x-ray photoelectron spectroscopy technique. The continuous grains lead to reduced phonon life time in A1gand low activation energy assists to enhance the electrical property. The MoS2/rGO has achieved the highestσof 22 622 S m-1at 315 K due to an electron-rich cloud around the electrons in S atoms near the adjacent layer of rGO.

Electronic and surface modulation of 2D MoS2nanosheets for an enhancement on flexible thermoelectric property

Two-dimensional materials have potential applications for flexible thermoelectric materials because of their excellent mechanical and unique electronic transport properties. Here we present a functionalization method by a Lewis acid-base reaction to modulate atomic structure and electronic properties at surface of the MoS₂nanosheets. By AlCl₃solution doping, the lone pair electronics from S atoms would enter into the empty orbitals of Al³⁺ions, which made the Fermi level of the 1T phase MoS₂move towards valence band, achieving a 1.8-fold enhancement of the thermoelectric power factor. Meanwhile, benefiting from the chemical welding effect of Al³⁺ions, the mechanical flexibility of the nanosheets restacking has been improved. We fabricate a wearable thermoelectric wristband based on this improved MoS₂nanosheets and achieved 5 mV voltage output when contacting with human body. We think this method makes most of the transition metal chalcogenides have great potential to harvest human body heat for supplying wearable electronic devices due to their similar molecular structure.

Recent progress of two-dimensional heterostructures for thermoelectric applications

The rapid development of synthesis and fabrication techniques has opened up a research upsurge in two-dimensional (2D) material heterostructures, which have received extensive attention due to their superior physical and chemical properties. Currently, thermoelectric energy conversion is an effective means to deal with the energy crisis and increasingly serious environmental pollution. Therefore, an in-depth understanding of thermoelectric transport properties in 2D heterostructures is crucial for the development of micro-nano energy devices. In this review, the recent progress of 2D heterostructures for thermoelectric applications is summarized in detail. Firstly, we systematically introduce diverse theoretical simulations and experimental measurements of the thermoelectric properties of 2D heterostructures. Then, the thermoelectric applications and performance regulation of several common 2D materials, as well as in-plane heterostructures and van der Waals heterostructures, are also discussed. Finally, the challenges of improving the thermoelectric performance of 2D heterostructures materials are summarized, and related prospects are described.

Interface-Induced Seebeck Effect in PtSe2/PtSe2 van der Waals Homostructures

The Seebeck effect refers to the production of an electric voltage when different temperatures are applied on a conductor, and the corresponding voltage-production efficiency is represented by the Seebeck coefficient. We report a Seebeck effect: thermal generation of driving voltage from the heat flowing in a thin PtSe₂/PtSe₂ van der Waals homostructure at the interface. We refer to the effect as the interface-induced Seebeck effect. By exploiting this effect by directly attaching multilayered PtSe₂ over high-resistance PtSe₂ thin films as a hybridized single structure, we obtained the highly challenging in-plane Seebeck coefficient of the PtSe₂ films that exhibit extremely high resistances. This direct attachment further enhanced the in-plane thermal Seebeck coefficients of the PtSe₂/PtSe₂ van der Waals homostructure on sapphire substrates. Consequently, we successfully enhanced the in-plane Seebeck coefficients for the PtSe₂ (10 nm)/PtSe₂ (2 nm) homostructure approximately 42% compared to that of a pure PtSe₂ (10 nm) layer at 300 K. These findings represent a significant achievement in understanding the interface-induced Seebeck effect and provide an effective strategy for promising large-area thermoelectric energy harvesting devices using two-dimensional transition metal dichalcogenide materials, which are ideal thermoelectric platforms with high figures of merit.

Ink-jet printing and drop-casting deposition of 2H-phase SnSe2and WSe2nanoflake assemblies for thermoelectric applications

The development of simple, scalable, and cost-effective methods to prepare Van der Waals materials for thermoelectric applications is a timely research field, whose potential and possibilities are still largely unexplored. In this work, we present a systematic study of ink-jet printing and drop-casting deposition of 2H phase SnSe₂and WSe₂nanoflake assemblies, obtained by liquid phase exfoliation, and their characterization in terms of electronic and thermoelectric properties. The choice of optimal annealing temperature and time is crucial for preserving phase purity and stoichiometry and for removing dry residues of ink solvents at inter-flake boundaries, while maximizing the sintering of nanoflakes. An additional pressing is beneficial to improve nanoflake orientation and packing, thus enhancing electric conductivity. In nanoflake assemblies deposited by drop casting and pressed at 1 GPa, we obtained thermoelectric power factors at room temperature up to 2.2 × 10^-4mW m^-1K^-2for SnSe₂and up to 3.0 × 10^-4mW m^-1K^-2for WSe₂.

Wearable Thermoelectric Materials and Devices for Self-Powered Electronic Systems

The emergence of artificial intelligence and the Internet of Things has led to a growing demand for wearable and maintenance-free power sources. The continual push toward lower operating voltages and power consumption in modern integrated circuits has made the development of devices powered by body heat finally feasible. In this context, thermoelectric (TE) materials have emerged as promising candidates for the effective conversion of body heat into electricity to power wearable devices without being limited by environmental conditions. Driven by rapid advances in processing technology and the performance of TE materials over the past two decades, wearable thermoelectric generators (WTEGs) have gradually become more flexible and stretchable so that they can be used on complex and dynamic surfaces. In this review, the functional materials, processing techniques, and strategies for the device design of different types of WTEGs are comprehensively covered. Wearable self-powered systems based on WTEGs are summarized, including multi-function TE modules, hybrid energy harvesting, and all-in-one energy devices. Challenges in organic TE materials, interfacial engineering, and assessments of device performance are discussed, and suggestions for future developments in the area are provided. This review will promote the rapid implementation of wearable TE materials and devices in self-powered electronic systems.

Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases

The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an extensive amount of interest amongst scientists and engineers alike and an intensive amount of research has brought about major breakthroughs in the electronic and optical properties of 2D materials. This in turn has generated considerable interest in novel device applications. With the polymorphic structural features of 2D-TMDs, this class of materials can exhibit both semiconducting and metallic (quasi-metallic) properties in their respective phases. This polymorphic property further increases the interest in 2D-TMDs both in fundamental research and for their potential utilization in novel high-performance device applications. In this review, we highlight the unique structural properties of few-layer and monolayer TMDs in the metallic 1T- and quasi-metallic 1T'-phases, and how these phases dictate their electronic and optical properties. An overview of the semiconducting-to-(quasi)-metallic phase transition of 2D-TMD systems will be covered along with a discussion on the phase transition mechanisms. The current development in the applications of (quasi)-metallic 2D-TMDs will be presented ranging from high-performance electronic and optoelectronic devices to energy storage, catalysis, piezoelectric and thermoelectric devices, and topological insulator and neuromorphic computing applications. We conclude our review by highlighting the challenges confronting the utilization of TMD-based systems and projecting the future developmental trends with an outlook of the progress needed to propel this exciting field forward.

Functional inks and extrusion-based 3D printing of 2D materials: a review of current research and applications

Graphene and related 2D materials offer an ideal platform for next generation disruptive technologies and in particular the potential to produce printed electronic devices with low cost and high throughput. Interest in the use of 2D materials to create functional inks has exponentially increased in recent years with the development of new ink formulations linked with effective printing techniques, including screen, gravure, inkjet and extrusion-based printing towards low-cost device manufacturing. Exfoliated, solution-processed 2D materials formulated into inks permits additive patterning onto both rigid and conformable substrates for printed device design with high-speed, large-scale and cost-effective manufacturing. Each printing technique has some sort of clear advantages over others that requires characteristic ink formulations according to their individual operational principles. Among them, the extrusion-based 3D printing technique has attracted heightened interest due to its ability to create three-dimensional (3D) architectures with increased surface area facilitating the design of a new generation of 3D devices suitable for a wide variety of applications. There still remain several challenges in the development of 2D material ink technologies for extrusion printing which must be resolved prior to their translation into large-scale device production. This comprehensive review presents the current progress on ink formulations with 2D materials and their broad practical applications for printed energy storage devices and sensors. Finally, an outline of the challenges and outlook for extrusion-based 3D printing inks and their place in the future printed devices ecosystem is presented.

Thermal and Photo Sensing Capabilities of Mono- and Few-Layer Thick Transition Metal Dichalcogenides

Two-dimensional (2D) materials have shown promise in various optical and electrical applications. Among these materials, semiconducting transition metal dichalcogenides (TMDs) have been heavily studied recently for their photodetection and thermoelectric properties. The recent progress in fabrication, defect engineering, doping, and heterostructure design has shown vast improvements in response time and sensitivity, which can be applied to both contact-based (thermocouple), and non-contact (photodetector) thermal sensing applications. These improvements have allowed the possibility of cost-effective and tunable thermal sensors for novel applications, such as broadband photodetectors, ultrafast detectors, and high thermoelectric figures of merit. In this review, we summarize the properties arisen in works that focus on the respective qualities of TMD-based photodetectors and thermocouples, with a focus on their optical, electrical, and thermoelectric capabilities for using them in sensing and detection.

Thermoelectric enhancement in multilayer thin-films of tin chalcogenide nanosheets/conductive polymers

Te-Substituted SnSe nanosheets (Te-s-SnSe NSs) with a lateral size of ∼500 nm are fabricated and their surfaces are then coated with a poly(3,4-ethylenedioxythiophene) PEDOT nanolayer. The 3,4-ethylenedioxythiophene loading is optimized for achieving outstanding thermoelectric performance and the resulting PEDOT-coated nanosheets (PEDOT-Te-s-SnSe NSs) are alternately stacked with PEDOT:poly(styrenesulfonate) (PSS) using a solution-processable method to obtain multilayer inorganic/organic composite films. The as-fabricated multilayer films exhibit outstanding electrical conductivity and Seebeck coefficient. This is due to the enhanced interchain interaction and charge-carrier hopping of the stretched PEDOT chains as well as the presumable energy-filtering effect at the interfacial potential barriers between inorganic and organic layers. The multilayer film consisting of three-repeated stacking allows a maximum thermoelectric power factor of 222 μW m-1 K-2, which is 5.5 times larger than that achieved with pristine PEDOT:PSS. This strategy of combining inorganic and organic materials into multilayer films is promising for the achievement of high-performance thin-film thermoelectrics.