The lead-free perovskite-based heterojunction C2N/CsGeI3: an exploration for superior visible-light absorption

Halide perovskites have distinguished themselves among the numerous optoelectronic materials due to their versatile processing technology and exceptional optical response. Unfortunately, their stability and toxicity from heavy metals severely hamper their development, in addition to the challenge of further improving photovoltaic performance. Hence, a lead-free perovskite-based heterojunction, C2N/CsGeI3, is investigated using a hybrid density functional, including electron structures, charge density differences, optical properties and more. The study reveals the presence of a built-in electric field directed from the CsGeI3 to the C2N layer. Moreover, based on the work function, it is confirmed that the electrons are transferred in a Z-scheme mechanism after the CsGeI3 contacts with the C2N layer. Under light irradiation, the construction of the C2N/CsGeI3 heterojunction significantly enhances optical absorption within the range of visible-light wavelengths. Additionally, the impact of interfacial strain on the C2N/CsGeI3 is explored and discussed. These findings not only suggest that the C2N/CsGeI3 heterojunction holds promise for photovoltaic applications but also provide a theoretical insight into lead-free perovskite-based functional materials.

Enhancement in photocatalytic water splitting using van der Waals heterostructure materials based on penta-layers

Recently, van der Waals heterostructures (vdWHs) have been used to improve the performance of 2D materials, enabling more applications. By using first-principles calculations, we have studied the electronic and optical properties of vdWHs composed of penta-siligraphene and other penta-layers (p-Si2C4/p-X; X = Si₂N₄, ZnO₂, Ge₂C₄ or SiGeC₄). The stability of the vdWHs is verified by computing their binding energy, vibrational phonon spectra and ab initio molecular dynamics simulations. By assessing the electronic properties, we have found that the p-Si2C4/p-ZnO2, p-Si2C4/p-Ge2C4 and p-Si2C4/p-SiGeC4 vdWHs are semiconductors with an indirect band gap characterized by type-I band alignment. Meanwhile, the p-Si2C4/p-Si2N4 vdWH is a quasi-direct band gap semiconductor characterized by type-II band alignment. Bader charge analysis and charge density of p-Si2C4/p-Si2N4 vdWHs showed that photogenerated electrons move from the p-Si2N4 monolayer to the p-Si2C4 monolayer limiting the recombination of photogenerated charges and improving the photocatalytic efficiency. Furthermore, the p-Si2C4/p-Si2N4 vdWH exhibits suitable band edge positions compared to isolated monolayers suggesting its potential applicability in photocatalytic water splitting. The calculated optical absorption revealed that the p-Si2N4 monolayer exhibits substantial optical absorption in the ultraviolet (UV) range, while the p-Si2C4 monolayer and the p-Si2C4/p-Si2N4 vdWH show outstanding optical absorption on the order of 10⁵ cm^-1 in the visible and UV ranges. More importantly, the p-Si2C4/p-Si2N4 vdWH can greatly improve the optical absorption in these regions, which leads to high-efficiency usage of solar energy. Our study provides a route to design new vdWHs based on pentagonal monolayers, as well as an efficient photocatalyst for photocatalytic water splitting and optical devices.

Dicarbon nitride and Janus transition metal chalcogenides van der Waals heterojunctions for photocatalytic water splitting

Two-dimensional graphene-like dicarbon nitride (C₂N) is a newly synthesized metal-free material, which has attracted significant research interest owing to the direct band gap, high carrier mobility, thermal stability, and great tunable properties. However, their application in photocatalytic water splitting has not been well explored. In this work, the properties of photocatalytic water decomposition in heterojunctions composed of C₂N and transition metal dichalcogenides (TMDs) with Janus structure MoXY (X, Y = S, Se, Te) are systematically studied by the first-principles calculations based on density functional theory. The results show that except for MoTeS/C₂N, the other five heterojunctions have type-Ⅱ band alignment, which causes electrons and holes to gather in the C₂N and MoXY layer separately. Because the coupled built-in electric field at the intra-layer and inter-layer of asymmetric TMDs with Janus structure forms van der Waals heterojunction, the external electric field is an effective means of modulating the electronic properties of the heterojunction. Under the imposition of an external electric field, the MoSeS/C₂N, MoTeSe/C₂N, and MoTeS/C₂N heterojunctions meet the band edge requirements for the photocatalytic decomposition of water. Detailed analysis demonstrates that the MoSeS/C₂N heterojunction could effectively improve the optical absorption properties of monolayer C₂N, making it a potential photocatalytic water decomposition material.

Theoretical study on photocatalytic performance of ZnO/C2N heterostructure towards high efficiency water splitting

The construction of van der Waals heterostructures offers effective boosting of the photocatalytic performance of two-dimensional materials. In this study, which uses the first-principles method, the electronic and absorptive properties of an emerging ZnO/C₂N heterostructure are systematically explored to determine the structure’s photocatalytic potential. The results demonstrate that ZnO and C₂N form a type-II band alignment heterostructure with a reduced band gap, and hence superior absorption in the visible region. Furthermore, the band edge positions of a ZnO/C₂N heterostructure meet the requirements for spontaneous water splitting. The ZnO/C₂N heterostructure is known to possess considerably improved carrier mobility, which is advantageous in the separation and migration of carriers. The Gibbs free energy calculation confirms the high catalytic activity of the ZnO/C₂N heterostructure for water-splitting reactions. All the aforementioned properties, including band gap, band edge positions, and optical absorption, can be directly tuned using biaxial lateral strain. A suitable band gap, decent band edge positions, high catalytic activity, and superior carrier mobility thus identify a ZnO/C₂N heterostructure as a prominent potential photocatalyst for water splitting.

Engineering 2D Materials for Photocatalytic Water-Splitting from a Theoretical Perspective

Splitting of water with the help of photocatalysts has gained a strong interest in the scientific community for producing clean energy, thus requiring novel semiconductor materials to achieve high-yield hydrogen production. The emergence of 2D nanoscale materials with remarkable electronic and optical properties has received much attention in this field. Owing to the recent developments in high-end computation and advanced electronic structure theories, first principles studies offer powerful tools to screen photocatalytic systems reliably and efficiently. This review is organized to highlight the essential properties of 2D photocatalysts and the recent advances in the theoretical engineering of 2D materials for the improvement in photocatalytic overall water-splitting. The advancement in the strategies including (i) single-atom catalysts, (ii) defect engineering, (iii) strain engineering, (iv) Janus structures, (v) type-II heterostructures (vi) Z-scheme heterostructures (vii) multilayer configurations (viii) edge-modification in nanoribbons and (ix) the effect of pH in overall water-splitting are summarized to improve the existing problems for a photocatalytic catalytic reaction such as overcoming large overpotential to trigger the water-splitting reactions without using cocatalysts. This review could serve as a bridge between theoretical and experimental research on next-generation 2D photocatalysts.

Two-dimensional CdS/SnS2 heterostructure: a highly efficient direct Z-scheme water splitting photocatalyst

A desired water splitting photocatalyst should not only possess a suitable bandgap and band edge position, but also host the spontaneous progress for overall water splitting without the aid of any sacrificial agents. In this work, we propose a two-dimensional CdS/SnS₂ heterostructure (CSHS) as a possible water splitting photocatalyst by first-principles calculations. The CSHS enhances the absorption of visible and infrared light, and the type-II band alignment guarantees the spatial separation of the photoinduced carriers. The induced built-in electric field across the CSHS interface efficiently separates the photoexcited carriers and extends their carrier lifetimes. All these properties make the CSHS a direct Z-scheme system with the hydrogen and oxygen evolution reactions occurring, respectively, at the CdS and SnS₂ layers. More encouragingly, the introduction of a S-vacancy into SnS₂ could effectively lower the overpotential of the oxygen evolution reaction, thus ensuring the overall water redox reaction to be achieved spontaneously under light irradiation. Our findings suggest that the CSHS is a promising water splitting photocatalyst.

Band offset engineering at C2N/MSe2 (M = Mo, W) interfaces

Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology. The key parameters in such heterostructure configurations are the valence and conduction band offsets at the interface, which determine the device performance. Here, based on density functional theory calculations, the bandgap and band offsets at C₂N/MSe₂ (M = Mo, W) interfaces have been engineered. The main findings demonstrate that the C₂N monolayer interacts with both MoSe₂ and WSe₂ monolayers through weak van der Waals interactions. These heterostructures possess a narrower indirect bandgap and a typical type-II heterostructure feature, being suitable for promoting the separation of photogenerated electron–hole pairs. The calculated Gibbs free energy of hydrogen adsorption demonstrates a reduction in the overpotential, towards the hydrogen evolution reaction, upon forming heterostructures. To further tune the bandgap values and band offsets of heterostructures, the external perturbations are included through a vertical strain and finite electric field. It is found that both the vertical strain and electric field strongly modulate the bandgap values and the magnitude of the band offsets, while the typical type-II band alignment remains preserved. It is noticeable that the band offset magnitudes of the C₂N/MoSe₂ and C₂N/WSe₂ heterostructures are more sensitive to an external electric field than to a vertical interlayer strain.

Stacking layered two-dimensional materials in a type-II band alignment block has provided a high-performance method in photocatalytic water-splitting technology.

Two-dimensional Dirac half-metal in porous carbon nitride C6N7monolayer via atomic doping

Motivated by the recent experimental discovery of C₆N₇monolayer (Zhaoet al2021Science Bulletin66, 1764), we show that C₆N₇monolayer co-doped with C atom is a Dirac half-metal by employing first-principle density functional theory calculations. The structural, mechanical, electronic and magnetic properties of the co-doped C₆N₇are investigated by both the PBE and HSE06 functionals. Pristine C₆N₇monolayer is a semiconductor with almost isotropic electronic dispersion around the Γ point. As the doping of the C₆N₇takes place, the substitution of an N atom with a C atom transforms the monolayer into a dilute magnetic semiconductor, with the spin-up channel showing a band gap of 2.3 eV, while the spin-down channel exhibits a semimetallic phase with multiple Dirac points. The thermodynamic stability of the system is also checked out via AIMD simulations, showing the monolayer to be free of distortion at 500 K. The emergence of Dirac half-metal in carbon nitride monolayer via atomic doping reveals an exciting material platform for designing novel nanoelectronics and spintronics devices.

Theoretical insight into the CdS/FAPbI3 heterostructure: a promising visible-light absorber

The optical absorption performance of the perovskite FAPbI₃ in the visible-light range is significantly improved by constructing a CdS/FAPbI₃ heterostructure.

Two dimensional CdS/ZnO type-II heterostructure used for photocatalytic water-splitting

The electronic structures of two dimensional (2D) CdS/ZnO heterostructure (CdZnHT) consisting of CdS singlelayer (SL) and ZnO SL are explored based on hybrid density functional calculation. The negative interface formation energies suggest the formation of CdZnHT is exothermic. The bandgap of CdZnHT is favorable for absorbing visible light, and the decent band edge position makes it thermodynamically feasible for spontaneous generation of oxygen and hydrogen. The formed electric field across the interface induced by charge transfer will reduce photogenerated carrier recombination and promote carrier migration. Particularly, CdZnHT is a type-II heterostructure. Oxygen generation takes place at ZnO layer and hydrogen production occurs at CdS layer, which will also promote the effective separation and migration of phogogenerated carriers and enhance photocatalytic performance. These findings suggest that 2D CdZnHTs are possible candidates as water-splitting photocatalysts.

A two-dimensional h-BN/C2N heterostructure as a promising metal-free photocatalyst for overall water-splitting

The construction of a heterostructure (HS) is an effective strategy to modulate the desired properties of two-dimensional (2D) materials and to extend their applications. In this paper, based on the density functional theory, we predict a metal-free type-II HS formed by h-BN and C₂N single layers. The h-BN/C₂N HS possesses a smaller bandgap than individual h-BN and C₂N single layers, and it exhibits excellent visible light absorption. Importantly, its band edge positions satisfy the requirements for spontaneous water-splitting. With the assistance of the built-in electric field across the HS and the band offset, the photoinduced carriers can be readily spatially separated. Free energy calculations indicate the high catalytic activity for water oxidation and reduction reactions. The performance can be further enhanced by strain, which modulates the bandgap and the band edge positions of the HS. The band alignment may undergo a transition from type-I to type-II under strain, offering an effective switch for the reaction. The appropriate bandgap, suitable band edge positions, and effective carrier separation make the h-BN/C₂N HS a promising candidate for use as a photocatalyst in water-splitting.

Two-Dimensional CdX/C2N (X = S, Se) Heterostructures as Potential Photocatalysts for Water Splitting: A DFT Study

Global environmental issues, in addition to limited fossil fuel resources, are being addressed by quests in search of efficient visible-light-driven water splitting catalysts for hydrogen production. The photocatalytic water splitting activities of CdX/C2N (X = S, Se) heterostructures have been investigated here using hybrid density functional theory calculations. The calculated band gaps of CdS/C2N and CdSe/C2N heterostructures are 1.48 and 2.12 eV, respectively. These are ideal band gap values that make possible harvesting of more visible light from the solar spectrum, which will result in high solar to energy conversion efficiencies. Charge density difference analysis shows that the charge redistributions mainly occur in the interface regions and that the charges transfer from the C2N to CdX layers. It is interesting to note that the CdX/C2N heterostructures possess a type-II band alignment, where the relative band alignment of the C2N and CdX monolayers promotes a spatial separation of the electrons (that resides in C2N) and holes (that resides in CdX). Importantly, the band edges of the heterostructures straddle the water redox potential under different pH conditions. This study demonstrates that the CdS/C2N and CdSe/C2N heterostructures are suitable materials to split water (from various sources) in different ranges of pH values.

Stable C2N/h-BN van der Waals heterostructure: flexibly tunable electronic and optic properties

Monolayer C2N has been successfully synthesized. To explore the enhancement of its stability and the expansion of its potential applications in electronics and optoelectronics, a vertical van der Waals heterostructure is constructed by C2N monolayer integrated withh-BN monolayer. The first-principles calculations based on the density functional theory show that this structure possesses a type-II band alignment with a smaller direct band gap and lager band offsets, suggesting that photo-generated electron-hole pairs can be well spatially separated, and thus an excellent photoelectric and photovoltaic material can be obtained. Also shown is that the electronic properties of such a heterostructure can be effectively regulated by a vertical strain and external electric field. For example, under compressive strain or forward electric field, its band gap can be significantly reduced to enhance light-excitation electron transition further, meanwhile the feature of direct band-gap and large band offsets is always well-preserved. Furthermore, it is found that the intrinsic heterostructure holds a wide optic adsorption range and large adsorption coefficient, and the applied compressive strain or a positive electric field can lead to a wide and high main absorption peak across the near-infrared, visible light, and ultraviolet region, implying that a tuned heterostructure has more promising applications in optoelectronics.

Superhigh flexibility and out-of-plane piezoelectricity together with strong anharmonic phonon scattering induced extremely low lattice thermal conductivity in hexagonal buckled CdX (XS, Se) monolayers

Although CdX (X = S, Se) has been mostly studied in the field of photocatalysis, photovoltaics, their intrinsic properties, such as, mechanical, piezoelectric, electron and phonon transport properties have been completely overlooked in buckled CdX monolayers. Ultra-low lattice thermal conductivity [1.08 W m-1K-1(0.75 W m-1K-1)] and high p-type Seebeck coefficient [1300μV K-1(850μV K-1)] in CdS (CdSe) monolayers have been found in this work based on first-principles DFT coupled to semi-classical Boltzmann transport equations, combining both the electronic and phononic transport. The dimensionless thermoelectric figure of merit is calculated to be 0.78 (0.5) in CdS (CdSe) monolayers at room temperature, which is comparable to that of two-dimensional (2D) tellurene (0.8), arsenene and antimonene (0.8), indicating its great potential for applications in 2D thermoelectrics. Such a low lattice thermal conductivity arise from the participation of both acoustic [91.98% (89.22%)] and optical modes [8.02% (10.78%)] together with low Debye temperature [254 K (187 K)], low group velocity [4 km s-1(3 km s-1)] in CdS (CdSe) monolayers, high anharmonicity and short phonon lifetime. Substantial cohesive energy (∼4-5 eV), dynamical and mechanical stability of the monolayers substantiate the feasibility in synthesizing the single layers in experiments. The inversion symmetry broken along thezdirection causes out-of-plane piezoelectricity. |d33| ∼ 21.6 pm V-1, calculated in CdS monolayer is found to be the highest amongst structures having atomic-layer thickness. Superlow Young's modulus ∼41 N m-1(31 N m-1) in CdS (CdSe) monolayers, which is comparable to that of planar CdS (29 N m-1) and TcTe2(34 N m-1), is an indicator of its superhigh flexibility. Direct semiconducting band gap, high carrier mobility (∼500 cm2V-1s-1) and superhigh flexibility in CdX monolayers signify its gigantic potential for applications in ultrathin, stretchable and flexible nanoelectronics. The all-round properties can be synergistically combined together in futuristic applications in nano-piezotronics as well.

A two-dimensional CdO/CdS heterostructure used for visible light photocatalysis

Based on hybrid density functional calculations, the geometrical and electronic structures of a two-dimensional (2D) CdO/CdS heterostructure (HT) formed by a CdO monolayer (ML) and a CdS ML are investigated. The formation of the CdO/CdS HT is exothermic, and the CdO/CdS HT shows excellent ability for visible light absorption. The CdO/CdS HT with a rotation angle of 0° possesses the characteristics of type-II band alignment and strong built-in electric field across the interface, which boost the photogenerated carrier separation. Besides, the band edge positions of the CdO/CdS HT of 0° are energetically favorable for overall water-splitting processes with the pH scope of 0-3.6. Therefore, the CdO/CdS HT is a promising photocatalyst to split water.

Band alignment control in a blue phosphorus/C2N van der Waals heterojunction using an electric field

Well-controlled band engineering of a blue phosphorus/C2N van der Waals (vdW) heterojunction is investigated by density functional theory (DFT) calculations. The heterojunction has a natural type-II band alignment with a direct band gap value of 1.514 eV, which gives the enormous potential for solar cell applications. When the heterojunction is under solar illumination, the photogenerated electron-hole pairs can separate out on the disparate monolayers effectively. It induces the formation of spatially indirect excitons. Furthermore, it is found that the band gap of this heterojunction exhibits approximately linear variation with respect to the perpendicular external electric field. Very interestingly, a band alignment change from type-II to type-I occurs at an applied electric field of -0.2 V Å-1. This characteristic provides an attractive possibility to obtain novel multifunctional devices.

2D layered SiC/C2N van der Waals type-II heterostructure: a visible-light-driven photocatalyst for water splitting

2D layered SiC/C₂N type-II heterostructure is an effective photocatalyst for hydrogen production from water splitting by visible light.

Two-dimensional layered Janus-In2SeTe/C2N van der Waals heterostructures for photocatalysis and photovoltaics: first-principles calculations

Through DFT calculations, Janus-In₂SeTe/C₂N heterostructures are found to have great potential applications in the fields of clean and sustainable energy.

C2N/BlueP van der Waals hetero-structure: an efficient photocatalytic water splitting 2D material

Constructing van der Waals (vdW) hetero-structures is an effective and feasible method to enhance two-dimensional (2D) materials with desired properties and to extend the application of the original materials. In this work, we establish a C₂N/BlueP vdW hetero-structure and explore its photocatalytic water splitting performance by investigating the electronic structure, band edge alignment, charge transfer, optical absorption and strain response based on the density functional theory (DFT) method. Numerical results indicate that the C₂N/BlueP hetero-structure possesses a proper direct bandgap and intrinsic type-II band alignment, which are beneficial to the space separation of photo-generated electron-hole pairs. The optical absorption of the hetero-structures is enhanced from the visible to ultraviolet light region compared with those of both individual monolayers. More importantly, the valence band maximum (VBM) is lower than the oxidation potential of water, and the conduction band minimum (CBM) is higher than the reduction potential of water, which indicates the proper photocatalytic potential for water splitting of the C₂N/BlueP hetero-structure. By applying a small vertical pressure perpendicular to the hetero-structure with roughly 6% interlayer compression, both the band alignment and the optical absorption can be improved, which gives better performance of photocatalytic water splitting for the C₂N/BlueP hetero-structure.

Rotational design of BP/XY2 (X = Mo, W; Y = S, Se) composites for overall photocatalytic water-splitting

Photocatalytic water-splitting for hydrogen generation is a promising way to solve the energy crisis, yet the design of efficient photocatalysts is still a challenge. By utilization of first principles calculations, we predict the photocatalytic properties of monolayer boron phosphide (BP) based BP/XY₂ (X  =  Mo, W; Y  =  S, Se) composites of different rotated configurations. Our results suggest that the BP/XY₂ composites can be stably formed, and the narrowed bandgaps ensure these composites are suitable for absorbing visible light. The bandgaps and band edge positions are slightly affected by the rotation angles. The BP/MoS₂, BP/MoSe₂, and BP/WSe₂ are type II heterostructures. Furthermore, the transferred charge from BP to XY₂ layers leads to the formation of electric fields, which efficiently separate the photoinduced carriers. The band alignments of BP/MoS₂, BP/MoS₂, BP/MoSe₂, and BP/WSe₂ satisfy the requirements of overall water-splitting within the pH scope of 3.6-7.9, 6.8-7.9, 4.0-8.0, and 8.7-8.8. This work will provide valuable insight for designing efficient water-splitting photocatalysts.

Predicting two-dimensional semiconducting boron carbides

Carbon and boron can mix to form numerous two-dimensional (2D) compounds with strong covalent bonds, yet very few possess a bandgap for functional applications. Motivated by the structural similarity between graphene and recently synthesized borophene, we propose a new family of semiconducting boron carbide monolayers composed of B₄C₃ pyramids and carbon hexagons, denoted as (B₄C₃)_m(C₆)_n (m, n are integers) by means of the global minimum search method augmented with first-principles calculations. These monolayers are isoelectronic to graphene yet exhibit increased bandgaps with decreasing n/m, due to the enhanced localization of boron multicenter bonding states as a consequence of the electronic transfer from boron to carbon. In particular, the B₄C₃ monolayer is even more stable than the previously synthesized BC₃ monolayer and has a direct bandgap of 2.73 eV, with the promise for applications in optical catalysis and optoelectronics. These results are likely to inform the on-going effort on the design of semiconducting 2D materials based on other light elements.

Theoretical study on the intrinsic properties of In2Se3/MoS2 as a photocatalyst driven by near-infrared, visible and ultraviolet light

Two-dimensional photocatalysts with full optical absorption have attracted widespread attention for water splitting and pollutant degradation, but only few single materials can meet this criterion.

Boronated holey graphene: a case of 2D ferromagnetic metal

In search of new candidates for two-dimensional ferromagnets, we consider boronated monolayer holey graphene (C₂B), akin to recently synthesized and extensively studied nitrogenated monolayer holey graphene (C₂N).

Band alignment and optical features in Janus-MoSeTe/X(OH)2 (X = Ca, Mg) van der Waals heterostructures

van der Waals heterostructures can be effectively used to enhance the electronic and optical properties and extend the application range of two-dimensional materials.

Strain-Tunable Electronic Properties and Band Alignments in GaTe/C2N Heterostructure: a First-Principles Calculation

Recently, GaTe and C₂N monolayers have been successfully synthesized and show fascinating electronic and optical properties. Such hybrid of GaTe with C₂N may induce new novel physical properties. In this work, we perform ab initio simulations on the structural, electronic, and optical properties of the GaTe/C₂N van der Waals (vdW) heterostructure. Our calculations show that the GaTe/C₂N vdW heterostructure is an indirect-gap semiconductor with type-II band alignment, facilitating an effective separation of photogenerated carriers. Intriguingly, it also presents enhanced visible-UV light absorption compared to its components and can be tailored to be a good photocatalyst for water splitting at certain pH by applying vertical strains. Further, we explore specifically the adsorption and decomposition of water molecules on the surface of C₂N layer in the heterostructure and the subsequent formation of hydrogen, which reveals the mechanism of photocatalytic hydrogen production on the 2D GaTe/C₂N heterostructure. Moreover, it is found that in-plane biaxial strains can induce indirect-direct-indirect, semiconductor-metal, and type II to type I or type III transitions. These interesting results make the GaTe/C₂N vdW heterostructure a promising candidate for applications in next generation of multifunctional optoelectronic devices.

Rapid Synthesis of Oxygen-Rich Covalent C2N (CNO) Nanosheets by Sacrifice of HKUST-1: Advanced Metal-Free Nanofillers for Polymers

A covalent oxygen-rich C₂N (CNO) network derived from metal-organic framework (HKUST-1) was innovatively synthesized by a rapid and green microwave irradiation method. This method can produce CNO multilayers efficiently, which paves a way for practical application of the nanosheets. Structural characterization and synthesis processes of CNO nanosheets were investigated to further understand the key role of HKUST-1. The as-prepared CNO has a layered feature, which theoretically favors to improve flame retardancy and mechanical performance of polymers. Desirable results were obtained as expected: the fire safety, antitensile, and impact resistance of polylactic acid (PLA) were prominently enhanced after adding CNO nanosheets, which can be attributed to the excellent dispersion and compatibility. PLA/CNO nanocomposite was self-distinguished at 2 wt % content of CNO, whereas the tensile strength was increased more than 36% compared with that of pure PLA, as well as the impact strength. This work broadens the application fields of CNO and endows it a possibility of actual application.

C2N: an excellent catalyst for the hydrogen evolution reaction

Based on first-principles calculations, we study the hydrogen evolution reaction (HER) on metal-free C₂N and make efforts to improve its catalytic performance.

Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures

Two-dimensional (2D) hafnium disulfide (HfS₂) has been synthesized and is expected to be a promising candidate for photovoltaic applications, and at the same time the hexagonal BN sheet (h-BN) and graphene-like C₃N₄ sheet (g-C₃N₄) have also been fabricated and are expected to be applied in photocatalysis. In this work, we employ hybrid density functional theory to investigate HfS₂-based van der Waals (vdW) heterojunctions for highly efficient photovoltaic and photocatalytic applications. HfS₂/h-BN and HfS₂/g-C₃N₄ heterostructures with direct bandgaps and efficient charge separation are both typical type-II semiconductors and have potential as photovoltaic structures for solar power. Moreover, compared with h-BN and g-C₃N₄ single-layers, HfS₂/h-BN heterostructures with 6% tensile strain and HfS₂/g-C₃N₄ heterostructures with 9% tensile strain have moderate bandgaps, whose optical absorption is obviously enhanced in the ultraviolet-visible (UV-VIS) light range and whose bandedges are suitable for photocatalytic water splitting. HfS₂/h-BN heterostructures with 6% applied strain, being different from HfS₂/g-C₃N₄ heterostructures with 9% strain, possess a direct bandgap and show complete separation of the photoinduced electron–hole pairs. Thus the HfS₂/h-BN heterojunction with 6% strain has bright prospects for use in visible light photocatalytic water splitting to produce hydrogen.

In this work, we employ hybrid density functional theory to investigate HfS₂-based van der Waals (vdW) heterojunctions for highly efficient photovoltaic and photocatalytic applications.