Amplification or cancellation of Fano resonance and quantum confinement induced asymmetries in Raman line-shapes

Effect of dimensionality on the excitation wavelength dependence of the Fano-Raman line-shape: a brief review

The already existing heterogeneity in nanomaterials makes it an intriguing yet complex system to study size effect vis-à-vis other external perturbations and thereby local modifications at the nanoscale, thus demanding an improved tool and analysis for the choice of study. The analysis of existential subtle perturbations and interactions in a wide class of materials using Raman spectromicroscopy has proved to be of utmost importance, and various phenomena such as quantum confinement and its interplay with Fano resonance have already been investigated in nanomaterials, including the role of various perturbations such as temperature, pressure, doping, bias, and excitation wavelength on Raman spectral line shape parameters. Amongst different perturbations that cause a change in the spectral profile of Fano resonance, the gray area of wavelength dependence of Fano Raman line shape profiles has been least analysed in the literature. Moreover, the true signature of Fano resonance in nanoscaled systems, which is the wavelength dependence of Fano interaction, remains the least discussed. This review summarises the wavelength dependent correlation of Fano resonance and its effect on the Raman spectral line-shape parameters in some bulk materials, nanomaterials, and molecular systems involving heavily doped p-type crystalline silicon, 2-D MoS2, graphene, WS2, single walled carbon nanotubes, etc. A brief overview of Fano resonance in metamaterials and photonic systems is also provided.

A Charge-Transfer-Induced Strategy for Enantioselective Discrimination by Potential-Regulated Surface-Enhanced Raman Scattering Spectroscopy

A simple and efficient enantioselective discrimination method, especially the chirality-label-free discrimination method, for the recognition of chiral small molecules with high resolution and wide applicability has been urgently desired. Herein, achiral Au/p-aminothiophenol (PATP) substrates were prepared to link the enantiomers via coupling reactions for constructing the enantioselective discrimination system. The resultant Au/PATP/enantiomer systems displayed charge-transfer (CT)-induced surface-enhanced Raman scattering (SERS) spectra that offered distinguishable information for the systems with different chirality. The differentiated spectral signal can be amplified by regulating the applied electrode potential, leading to great enantioselective discrimination performance. Moreover, the relationship between the discrimination performance and the potential-regulated CT process was revealed by SERS, which enabled an accurate and effective enantiomeric determination for various chiral molecules, including aromatic and aliphatic small molecules. The aliphatic molecule with the shorter chain was discriminated with a higher resolution, since the longer-chain molecule in the discrimination system may cause a change in the molecular electronic structure of the PATP. In addition, the aromatic chiral molecule can be distinguished easier than the aliphatic molecules, which means that the generation of the conjugation of electrons in the aromatic molecule-involved enantiomeric systems facilitates CT-induced SERS discrimination. Our work provides guidance for the design and development of an effective enantioselective discrimination strategy with high discrimination performance in diverse application fields.

Recent advances in metal sulfide nanoparticle-added bionanocomposite films for food packaging applications

Metal sulfide nanoparticles have recently attracted much attention due to their unique physical and functional properties. Metal sulfide nanoparticles used as optoelectronic and biomedical materials in the past decades are promising for making functional nanocomposite films due to their low toxicity and strong antibacterial activity. Recently, copper sulfide and zinc sulfide nanomaterials have been used to produce food packaging films for active packaging. Metal sulfide nanoparticles added as nanofillers are attracting attention in packaging applications due to their excellent potential to improve mechanical, barrier properties, and antibacterial activity. This review covers the fabrication process and important applications of metal sulfide nanoparticles. The development of metal sulfides reinforcing mainly copper sulfide and zinc sulfide nanomaterials as multifunctional nanofillers in bio-based films for active packaging applications has been comprehensively reviewed. As the recognition of metal sulfide nanoparticles as a functional filler increases, the development and application potential of active packaging films using them is expected to increase.

Theoretical Study on the Ultrafast Selective Excitation of Surface-Enhanced Coherent Anti-Stokes Raman Scattering Based on Fano Resonance of Disk-Ring Nanostructures by Shaped Femtosecond Laser Pulses

The enhancement and selective excitation of coherent anti-Stokes Raman scattering (CARS) and the suppression of background noise are very important problems for real-time detection at the single-molecule level. Optimizing the plasmonic substrate to ensure that all the hot spots of the pump, probe, Stokes, and anti-Stokes light are at the same position is the key to increasing the CARS signal to reach the level of single-molecule detection. The selective excitation of the target CARS peak and the suppression of the other peaks are the key to improving the signal-to-noise ratio. In this paper, we present a theoretical study to control the selective excitation and enhancement of any one of the three CARS peaks using the Fano resonance of a disk-ring structure. By optimizing the modulation of the pump, Stokes, and probe pulse, one CARS peak is maximized, while the other two are suppressed to zero. Fano resonance is applied to simultaneously enhance the four surface plasmon modes of the pump, probe, Stokes, and anti-Stokes light and to ensure that all the hot spots are located at the same position by adjusting the size of the disk-ring structure. The hot spots of the four pulses are concentrated in the disk-ring gap with a deviation distance of less than 2 nm, and the intensity of the CARS is enhanced by 1.43 × 1012 times, which is much higher than the requirement of single-molecule detection. The time, frequency, and phase distribution of the input and the response of the four pulses are studied in detail. It was found that the selective excitation and the spectra of CARS are both well preserved.

Parallel or interconnected pores’ formation through etchant selective silicon porosification

The effect of the oxidizer present in the etching solution on the surface morphology and microstructure obtained after porosifying a p-type silicon wafer using metal-assisted chemical etching was studied. The morphologies of Si wafers porosified using two different solutions, HF/H2O2 and HF/KMnO4, were compared to establish how either of the oxidizers (H2O2 or KMnO4) should be chosen depending on the desired application. A comparative study revealed that parallel pores with wire-like structures or interconnected pores with cheese-like structures can be obtained when H2O2 or KMnO4 are chosen, respectively. Careful analysis of the SEM images was carried out using ImageJ to establish that the samples prepared using KMnO4 are more porous due to aggressive etching. Additionally, experimental and theoretical Raman spectroscopic studies have been utilized to study the presence of low-dimensional Si nanostructures, which are a few nanometers in size, at the microscopic level in porosified silicon.

Pseudo-Anomalous Size-Dependent Electron-Phonon Interaction in Graded Energy Band: Solving the Fano Paradox

Quantum size effects on interferons (electron-phonon bound states), confined in fractal silicon (Si) nanostructures (NSs), have been studied by using Raman spectromicroscopy. A paradoxical size dependence of Fano parameters, estimated from Raman spectra, has been observed as a consequence of longitudinal variation of nanocrystallite size along the Si wires leading to local variations in the dopants' density which actually starts governing the Fano coupling, thus liberating the interferons to exhibit the typical quantum size effect. These interferons are more dominated by the effective reduction in dopants' density rather than the quantum confinement effect. Detailed experimental and theoretical Raman line shape analyses have been performed to solve the paradox by establishing that the increasing size effect actually is accompanied by receding Fano coupling due to the weakened electronic continuum. The latter has been validated by observing a consequent variation in the Raman signal from dopants which was found to be consistent with the above conclusion.

Engineering the Microstructure of Silicon Nanowires by Controlling the Shape of the Metal Catalyst and Composition of the Etchant in a Two-Step MACE Process: An In-Depth Analysis of the Growth Mechanism

In this work, slanted, kinked, and straight silicon nanowires (SiNWs) are fabricated on Si(111) and (100) substrates using a facile two-step metal-assisted chemical etching nanofabrication technique. We systematically investigated the effect of crystallography, morphology of Ag catalyst, and composition of etchant on the etch profile of Ag catalyst on Si(111) and (100) substrates. We found that the movement of AgNPs inside the Si is determined by physiochemical events such as Ag/Ag interaction, Ag/Si contact, and diffusion kinetics. Further, from detailed TEM and micro-Raman spectroscopy analyses, we demonstrate that the metal catalyst moves in the crystallographically preferred etching direction (viz., <100>) only when the interface effect is not predominant. Further, the metal-assisted chemical etching (MACE) system is highly stable at low-concentration plating and etching solutions, but at high concentrations, the system loses its stability and becomes highly random, leading to the movement of Ag catalyst in directions other than ⟨100⟩. In addition, our studies reveal that Ag nanostructures growth on Si(111) and (100) substrates through galvanic displacement is controlled by substrate symmetry and surface bond density. Finally, we demonstrate that by using an optimized balance between the Ag morphology and concentration of the etchant, the angle in slanted SiNWs, kink position in kinked SiNWs, and aspect ratio of straight SiNWs can be controlled judiciously, leading to enhanced optical absorption in the broadband solar spectrum.

Deconvoluting Diffuse Reflectance Spectra for Retrieving Nanostructures' Size Details: An Easy and Efficient Approach

A new model has been reported here to estimate the mean size and size distribution in nanostructured materials by utilizing a simple and economic diffuse reflectance spectroscopy through spectral line-shape analysis. In the proposed model, a theoretical line shape has been derived by taking into account a size distribution function, which represents a variation in absorption coefficient as a function of size, which in turn depends on the band gap and thus on the excitation photon energy. A fitting of the experimental absorption spectra with the derived line-shape function yields the mean crystallite size and size distribution. The size and size distribution have been successfully estimated from two different silicon nanostructured samples, prepared by metal induced etching. The model has been validated by comparing the estimated values with the sizes estimated using Raman spectroscopy, which is a well-known technique. The two results are not only consistent with each other but are also found to be consistent with the electron microscopy's results, revealing that a technique as simple and as economic as diffuse reflectance spectroscopy can be used to estimate size distribution. In addition, the proposed model can also be used to investigate the homogeneity in the size distribution in a nanostructured sample.

Quantifying the Short-Range Order in Amorphous Silicon by Raman Scattering

Quantification of the short-range order in amorphous silicon has been formulized using Raman scattering by taking into account established frameworks for studying the spectral line-shape and size dependent Raman peak shift. A theoretical line-shape function has been proposed for representing the observed Raman scattering spectrum from amorphous-Si-based on modified phonon confinement model framework. While analyzing modified phonon confinement model, the term "confinement size" used in the context of nanocrystalline Si was found analogous to the short-range order distance in a-Si thus enabling one to quantify the same using Raman scattering. Additionally, an empirical formula has been proposed using bond polarizability model for estimating the short-range order making one capable to quantify the distance of short-range order by looking at the Raman peak position alone. Both the proposals have been validated using three different data sets reported by three different research groups from a-Si samples prepared by three different methods making the analysis universal.