Unveiling Crucial Chemical Processing Parameters Influencing the Performance of Solution-Processed Inorganic Thermoelectric Materials

Production of thermoelectric materials from solution-processed particles involves the synthesis of particles, their purification and densification into pelletized material. Chemical changes that occur during each one of these steps render them performance determining. Particularly the purification steps, bypassed in conventional solid-state synthesis, are the cause for large discrepancies among similar solution-processed materials. In present work, the investigation focuses on a water-based surfactant free solution synthesis of SnSe, a highly relevant thermoelectric material. We show and rationalize that the number of leaching steps, purification solvent, annealing, and annealing atmosphere have significant influence on the Sn : Se ratio and impurity content in the powder. Such compositional changes that are undetectable by conventional characterization techniques lead to distinct consolidated materials with different types and concentration of defects. Additionally, the profound effect on their transport properties is demonstrated. We emphasize that understanding the chemistry and identifying key chemical species and their role throughout the process is paramount for optimizing material performance. Furthermore, we aim to demonstrate the necessity of comprehensive reporting of these steps as a standard practice to ensure material reproducibility.

Design of an Efficient Tin Selenide-Based Ternary Nanocomposite Electrode for Simultaneous Determination of Paracetamol, Tryptophan, and Caffeine

Electrochemical sensors play an essential role in the medical arena through assessing the drug quality and diagnosing diseases. The design of sensors relies on the electroactive properties of the material meticulously chosen to modify the electrode. Here in this work, a facile ternary SnSe/TiO₂@GO electroactive nanocomposite was prepared using tin selenide (SnSe) in combination with titanium dioxide (TiO₂) embedded on graphene oxide (GO). The ternary nanocomposite was characterized by X-ray diffraction, Raman, FT-IR, and X-ray photoelectron spectroscopy, energy dispersive analysis, and scanning electron microscopy. The ternary nanocomposite was then drop-coated on the GC electrode to form the SnSe/TiO₂@GO-GC electrode. Its electrochemical activity was demonstrated for simultaneous determination of paracetamol, tryptophan, and caffeine. The synergetic interaction of the components and their innate virtue showed enriched electrocatalytic activity such as a decrease in overpotential, enhancement in electron transfer, greater sensing ability and selectivity, wide linear range, and low detection limit toward the chosen analytes. Broad linear ranges of concentrations, 0.0089-410, 0.0136-87.66, and 0.0160-355 μM, with detection limits of 0.0030, 0.0053, and 0.0065 μM for paracetamol, tryptophan, and caffeine, respectively, were noticed. The electrode also displayed high selectivity, stability, repeatability, and reproducibility. Importantly, the study was successful for detection and quantification of the above components in real samples of blood serum, pharmaceutical formulations, and beverages.

Stability & durability of self-driven photo-detective parameters based on Sn1-β Sb β Se (β = 0, 0.05, 0.10, 0.15, 0.20) ternary alloy single crystals

In the present investigation Sn_1−βSb_βSe crystals are grown using the direct vapor transport method. The crystals after growth were analyzed by EDAX and XPS to confirm the elemental composition. The surface morphological properties were studied by scanning electron microscope, confirming a flat surface and layered growth of the Sn_1−βSb_βSe crystals. The structural properties studied by X-ray diffraction and high-resolution transmission electron microscopy confirm the orthorhombic structure of the grown Sn_1−βSb_β Se crystals. The Raman spectroscopic measurements evince the presence of B2g and Ag vibration modes. The PL intensity peak at ∼400 nm to 500 nm confirms the energy band gap. The indirect energy band gap of 1.18 eV was evaluated using Tauc plot by employing UV-visible spectroscopy making it a promising candidate for optoelectronic and photonic applications. The pulse photo response of pure and doped samples was studied under a monochromatic source of wavelength 670 nm and intensity of 30 mW cm⁻² at zero biasing voltage firstly on day one and then the same samples were preserved for 50 days and the stability of the photodetectors was observed. Photodetector parameters such as rise time, decay time, photocurrent, responsivity, sensitivity, and detectivity were observed, and evaluated results are presented in this article.

DVT grown SnSbSe crystals were characterized using E-DAX, XPS, XRD, SEM, HRTEM, UV, PL and Raman characterizations. Photodetection parameters depict the improvement in the stability and durability of device for SbSnSe photodetector compare to SnSe.

Solution phase growth and analysis of super-thin zigzag tin selenide nanoribbons

Tin selenide (SnSe), a highly promising layered material, has been garnering particular interest in recent times due to its significant promise for future energy devices. Herein we report a simple solution-phase approach for growing highly crystalline layered SnSe nanoribbons. Polyvinylpyrrolidone (PVP) was used as a templating agent to selectively passivates the (100) and (001) facets of the SnSe nanoribbons resulting in the unique growth of nanoribbons along theirb-axis with a defined zigzag edge state along the sidewalls. The SnSe nanoribbons are few layers thick (∼20 layers), with mean widths of ∼40 nm, and achievable length of >1μm. Nanoribbons could be produced in relatively high quantities (>150 mg) in a single batch experiment. The PVP coating also offers some resistance to oxidation, with the removal of the PVP seen to lead to the formation of a SnSe/SnO_xcore-shell structure. The use of non-toxic PVP to replace toxic amines that are typically employed for other 1D forms of SnSe is a significant advantage for sustainable and environmentally friendly applications. Heat transport properties of the SnSe nanoribbons, derived from power-dependent Raman spectroscopy, demonstrate the potential of SnSe nanoribbons as thermoelectric material.

Single source precursor route to nanometric tin chalcogenides

Low-temperature solution phase synthesis of nanomaterials using designed molecular precursors enjoys tremendous advantages over traditional high-temperature solid-state synthesis. These include atomic-level control over stoichiometry, homogeneous elemental dispersion and uniformly distributed nanoparticles. For exploiting these advantages, however, rationally designed molecular complexes having certain properties are usually required. We report here the synthesis and complete characterization of new molecular precursors containing direct Sn-E bonds (E = S or Se), which undergo facile decomposition under different conditions (solid/solution phase, thermal/microwave heating, single/mixed solvents, varying temperatures, etc.) to afford phase-pure or mixed-phase tin chalcogenide nanoflakes with defined ratios.

Enhanced Charge Carrier Separation and Improved Biexciton Yield at the p-n Junction of SnSe/CdSe Heterostructures: A Detailed Electrochemical and Ultrafast Spectroscopic Investigation

Tin chalcogenides (SnX, X = S, Se)-based heterostructures (HSs) are promising materials for the construction of low-cost optoelectronic devices. Here, we report the synthesis of a SnSe/CdSe HS using the controlled cation exchange reaction. The (400) plane of SnSe and the (111) plane of CdSe confirm the formation of an interface between SnSe and CdSe. The Type I band alignment is estimated for the SnSe/CdSe HS with a small conduction band offset (CBO) of 0.72 eV through cyclic voltammetry measurements. Transient absorption (TA) studies demonstrate a drastic enhancement of the CdSe biexciton signal that points toward the hot carrier transfer from SnSe to CdSe in a short time scale. The fast growth and recovery of CdSe bleach in the presence of SnSe indicate charge transfer back to SnSe. The observed delocalization of carriers in these two systems is crucial for an optoelectronic device. Our findings provide new insights into the fabrication of cost-effective photovoltaic devices based on SnSe-based heterostructures.

Tin-selenide as a futuristic material: properties and applications

SnSe/SnSe2 is a promising versatile material with applications in various fields like solar cells, photodetectors, memory devices, lithium and sodium-ion batteries, gas sensing, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap. In this review, all possible applications of SnSe/SnSe2 have been summarized. Some of the basic properties, as well as synthesis techniques have also been outlined. This review will help the researcher to understand the properties and possible applications of tin selenide-based materials. Thus, this will help in advancing the field of tin selenide-based materials for next generation technology.

Effect of film thickness and evaporation rate on co-evaporated SnSe thin films for photovoltaic applications

SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates. A device with a structure of soda-lime glass/Mo/SnSe/CdS/i-ZnO/ITO/Ni/Al was fabricated. Device efficiency was improved from 0.18% to 1.02% by a film thickness of 1.3 μm and evaporation rate of 2.5 Å S⁻¹via augmentation of short-circuit current density and open-circuit voltage. Properties (electrical, optical, structural) and scanning electron microscopy measurements were compared for samples. A SnSe thin-film solar cell prepared with a film thickness of 1.3 μm and evaporation rate of 2.5 Å S⁻¹ had the highest electron mobility, better crystalline properties, and larger grain size compared with the other solar cells prepared. These data can be used to guide growth of high-quality SnSe thin films, and contribute to development of efficient SnSe thin-film solar cells using an evaporation-based method.

SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates.

Solution-Based Synthesis and Processing of Metal Chalcogenides for Thermoelectric Applications

Metal chalcogenide materials are current mainstream thermoelectric materials with high conversion efficiency. This review provides an overview of the scalable solution-based methods for controllable synthesis of various nanostructured and thin-film metal chalcogenides, as well as their properties for thermoelectric applications. Furthermore, the state-of-art ink-based processing method for fabrication of thermoelectric generators based on metal chalcogenides is briefly introduced. Finally, the perspective on this field with regard to material production and device development is also commented upon.