Synthesis and fast transfer of monolayer MoS2 on reusable fused silica

Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods

Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.

Synthesis of Large-Area Single- to Few-Layered MoS2 on an Ionic Liquid Surface

Large-area fabrication of transition metal dichalcogenides via environmentally friendly and efficient processes has been a long-standing issue in the field of two-dimensional (2D) materials. Here, we report that single- to few-layered MoS₂ sheets with an average size of the order of micrometers have been successfully synthesized on an ionic liquid surface by a modified low-pressure chemical vapor deposition (LP-CVD) method without the assistance of catalysts. It is found that the MoS₂ sheets grown on the liquid substrate exhibit a complete molecular crystal structure, which is confirmed by transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectroscopy measurements. The interlayer spacing does not change significantly with the increase of the MoS₂ layers, corresponding to a layer-by-layer growth pattern. The growth mechanism of the MoS₂ sheets is presented according to the experimental results. The work provides a new and simple method of preparing more molecular crystals on liquid substrates and will contribute to further research in this field.

Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High-Performance UV Photodetectors

2D lead iodide (PbI₂ ) is attracting great interest due to its great potential in the application of UV photodetectors. In this work, a facile solution-based method is developed to synthesize ultraflat PbI₂ nanoflakes for high-performance UV photodetectors. By maintaining at proximate room temperature and adding an evaporation suppression solvent for slow-rate crystal growth, high-quality PbI₂ nanoflakes with an ultraflat surface are obtained. The UV photodetectors based on 2D PbI₂ nanoflakes exhibit a high photoresponsivity of 0.51 A W^-1 , a high detectivity of 4.0 × 10¹⁰ Jones, a high external quantum efficiency (EQE) of 168.9%, and a rapid response speed including a rise time of 14.1 ms and a decay time of 31.0 ms. The balanced and excellent photodetector performance of these devices paves the road for practical UV photodetection based on 2D PbI₂ nanoflakes.

A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices

Clean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials grown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe₂ and WS₂ single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe₂ retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling high-performance field effect transistors with mobility and ON/OFF ratio ∼10 times higher than those made by PMMA-transferred WSe₂. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of ∼6.4% achieved.

Tunable photoluminescence in a van der Waals heterojunction built from a MoS2 monolayer and a PTCDA organic semiconductor

We report the photoluminescence (PL) characteristics of a van der Waals (vdW) heterojunction constructed by simply depositing an organic semiconductor of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) onto a two-dimensional MoS2 monolayer. The crystallinity of PTCDA on MoS2 is significantly improved due to the vdW epitaxial growth. We observe an enhanced PL intensity and PL peak shift of the MoS2/PTCDA heterojunction compared with the solo MoS2 and PTCDA layer. The synergistic PL characteristics are believed to originate from the hybridization interaction between the MoS2 and the PTCDA as evidenced by density functional theory calculations and Raman measurements. The hybridization interfacial interaction is found to be greatly influenced by the crystalline ordering of the PTCDA film on the 2D MoS2. Our study opens up a new avenue to tune the PL of vdW heterojunctions consisting of TMDs and organic semiconductors for optoelectronic applications.

Growth of 'W' doped molybdenum disulfide on graphene transferred molybdenum substrate

In the present study, a novel method has been carried out to grow tungsten (W) doped molybdenum disulfide (MoS₂) on the graphene transferred TEM grid in a chemical vapor deposition (CVD) setup. Tungsten trioxide (WO₃) has been used as a source for ‘W’ while ‘Mo’ has been derived from Mo based substrate. Different experimental parameters were used in this experiment. Higher gas flow rate decreases the size of the sample flake and on other side increases the dopant concentrations. The interaction mechanism between Mo, S, W and oxygen (O) have been explored. The influence of oxygen seems to be not avoidable completely which also imposes effective growth condition for the reaction of Mo with incoming sulfur atoms. The difference in the migration energies of Mo, WO₃, S clusters on the graphene and the higher reactivity of Mo clusters over other possibly formed atomic clusters on the graphene leads to the growth of W doped MoS₂ monolayers. Formation of MoS₂ monolayer and the nature of edge doping of ‘W’ is explained well with the crystal model using underlying nucleation principles. We believe our result provide a special route to prepare W doped MoS₂ on graphene substrate in the future.

Damage-free and rapid transfer of CVD-grown two-dimensional transition metal dichalcogenides by dissolving sacrificial water-soluble layers

As one of the most important family members of two-dimensional (2D) materials, the growth and damage-free transfer of transition metal dichalcogenides (TMDs) play crucial roles in their future applications. Here, we report a damage-free and highly efficient approach to transfer single and few-layer 2D TMDs to arbitrary substrates by dissolving a sacrificial water-soluble layer, which is formed underneath 2D TMD flakes simultaneously during the growth process. It is demonstrated, for monolayer MoS₂, that no quality degradation is found after the transfer by performing transmission electron microscopy, Raman spectroscopy, photoluminescence and electrical transport studies. The field effect mobility of the post-transfer MoS₂ flakes was found to be improved by 2-3 orders compared with that of the as-grown ones. This approach was also demonstrated to be applicable to other TMDs, other halide salts as precursors, or other growth substrates, indicating its universality for other 2D materials. Our work may pave the way for material synthesis of future integrated electronic and optoelectronic devices based on 2D TMD materials.