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Zhang L, Yang Z, Feng S, Guo Z, Jia Q, Zeng H, Ding Y, Das P, Bi Z, Ma J, Fu Y, Wang S, Mi J, Zheng S, Li M, Sun DM, Kang N, Wu ZS, Cheng HM. Metal telluride nanosheets by scalable solid lithiation and exfoliation. Nature 2024; 628:313-319. [PMID: 38570689 DOI: 10.1038/s41586-024-07209-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 02/20/2024] [Indexed: 04/05/2024]
Abstract
Transition metal tellurides (TMTs) have been ideal materials for exploring exotic properties in condensed-matter physics, chemistry and materials science1-3. Although TMT nanosheets have been produced by top-down exfoliation, their scale is below the gram level and requires a long processing time, restricting their effective application from laboratory to market4-8. We report the fast and scalable synthesis of a wide variety of MTe2 (M = Nb, Mo, W, Ta, Ti) nanosheets by the solid lithiation of bulk MTe2 within 10 min and their subsequent hydrolysis within seconds. Using NbTe2 as a representative, we produced more than a hundred grams (108 g) of NbTe2 nanosheets with 3.2 nm mean thickness, 6.2 µm mean lateral size and a high yield (>80%). Several interesting quantum phenomena, such as quantum oscillations and giant magnetoresistance, were observed that are generally restricted to highly crystalline MTe2 nanosheets. The TMT nanosheets also perform well as electrocatalysts for lithium-oxygen batteries and electrodes for microsupercapacitors (MSCs). Moreover, this synthesis method is efficient for preparing alloyed telluride, selenide and sulfide nanosheets. Our work opens new opportunities for the universal and scalable synthesis of TMT nanosheets for exploring new quantum phenomena, potential applications and commercialization.
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Affiliation(s)
- Liangzhu Zhang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China
- Shanghai Electronic Chemicals innovation Institute, East China University of science and Technology, Shanghai, China
| | - Zixuan Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Zhuobin Guo
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Qingchao Jia
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China
- Shanghai Electronic Chemicals innovation Institute, East China University of science and Technology, Shanghai, China
| | - Huidan Zeng
- School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, China
- Shanghai Electronic Chemicals innovation Institute, East China University of science and Technology, Shanghai, China
| | - Yajun Ding
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Pratteek Das
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Zhihong Bi
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- University of Chinese Academy of Sciences, Beijing, China
| | - Jiaxin Ma
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Yunqi Fu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China
| | - Sen Wang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Jinxing Mi
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Shuanghao Zheng
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
- Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, China
| | - Mingrun Li
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Ning Kang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, China.
| | - Zhong-Shuai Wu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, China.
- Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Shenzhen Key Laboratory of Energy Materials for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, China.
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Zhang D, Du J, Zhang W, Tong B, Sun Y, Zhao TY, Ma LP, Sun DM, Cheng HM, Ren W. Carrier Transport Regulation of Pixel Graphene Transparent Electrodes for Active-Matrix Organic Light-Emitting Diode Display. Small 2023; 19:e2302920. [PMID: 37267934 DOI: 10.1002/smll.202302920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2023] [Revised: 05/14/2023] [Indexed: 06/04/2023]
Abstract
Integrating a graphene transparent electrode (TE) matrix with driving circuits is essential for the practical use of graphene in optoelectronics such as active-matrix organic light-emitting diode (OLED) display, however it is disabled by the transport of carriers between graphene pixels after deposition of a semiconductor functional layer caused by the atomic thickness of graphene. Here, the carrier transport regulation of a graphene TE matrix by using an insulating polyethyleneimine (PEIE) layer is reported. The PEIE forms an ultrathin uniform film (≤10 nm) to fill the gap of the graphene matrix, blocking horizontal electron transport between graphene pixels. Meanwhile, it can reduce the work function of graphene, improving the vertical electron injection through electron tunneling. This enables the fabrication of inverted OLED pixels with record high current and power efficiencies of 90.7 cd A-1 and 89.1 lm W-1 , respectively. By integrating these inverted OLED pixels with a carbon nanotube-based thin-film transistor (CNT-TFT)-driven circuit, an inch-size flexible active-matrix OLED display is demonstrated, in which all OLED pixels are independently controlled by CNT-TFTs. This research paves a way for the application of graphene-like atomically thin TE pixels in flexible optoelectronics such as displays, smart wearables, and free-form surface lighting.
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Affiliation(s)
- Dingdong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Jinhong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Weimin Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Bo Tong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Tian-Yang Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Lai-Peng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- Faculty of Materials Science and Energy Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, 518055, P. R. China
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
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3
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Zang C, Li B, Sun Y, Feng S, Wang XZ, Wang X, Sun DM. Uniform self-rectifying resistive random-access memory based on an MXene-TiO 2 Schottky junction. Nanoscale Adv 2022; 4:5062-5069. [PMID: 36504734 PMCID: PMC9680946 DOI: 10.1039/d2na00281g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 10/08/2022] [Indexed: 06/17/2023]
Abstract
For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barrier modulation enables resistive switching through charge trapping/de-trapping at the top-electrode/oxide interface, which is effective for improving the uniformity of RRAM devices. Here, we report a uniform RRAM device based on a MXene-TiO2 Schottky junction. The defect traps within the MXene formed during its fabricating process can trap and release the charges at the MXene-TiO2 interface to modulate the Schottky barrier for the resistive switching behavior. Our devices exhibit excellent current on-off ratio uniformity, device-to-device reproducibility, long-term retention, and endurance reliability. Due to the different carrier-blocking abilities of the MXene-TiO2 and TiO2-Si interface barriers, a self-rectifying behavior can be obtained with a rectifying ratio of 103, which offers great potential for large-scale RRAM applications based on MXene materials.
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Affiliation(s)
- Chao Zang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Physical Science and Technology, ShanghaiTech University 393 Huaxiazhong Road Shanghai 200031 China
| | - Xin-Zhe Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Xiaohui Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China
- School of Materials Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
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4
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Fu J, Sun DM, Zhang Y, Huang YF, He Q, Zhang J. [A case of restrictive cardiomyopathy associated with new TPM1 gene mutation]. Zhonghua Er Ke Za Zhi 2022; 60:1077-1078. [PMID: 36207858 DOI: 10.3760/cma.j.cn112140-20220118-00064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Affiliation(s)
- J Fu
- Department of Cardiology, Wuhan Children's Hospital (Wuhan Maternal and Child Healthcare Hospital), Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430016, China
| | - D M Sun
- Department of Cardiology, Wuhan Children's Hospital (Wuhan Maternal and Child Healthcare Hospital), Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430016, China
| | - Y Zhang
- Department of Cardiology, Wuhan Children's Hospital (Wuhan Maternal and Child Healthcare Hospital), Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430016, China
| | - Y F Huang
- Department of Cardiology, Wuhan Children's Hospital (Wuhan Maternal and Child Healthcare Hospital), Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430016, China
| | - Q He
- Department of Cardiology, Wuhan Children's Hospital (Wuhan Maternal and Child Healthcare Hospital), Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430016, China
| | - J Zhang
- Department of Cardiology, Wuhan Children's Hospital (Wuhan Maternal and Child Healthcare Hospital), Tongji Medical College, Huazhong University of Science and Technology, Wuhan 430016, China
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5
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Ma T, Yao B, Zheng Z, Liu Z, Ma W, Chen M, Chen H, Deng S, Xu N, Bao Q, Sun DM, Cheng HM, Ren W. Engineering Graphene Grain Boundaries for Plasmonic Multi-Excitation and Hotspots. ACS Nano 2022; 16:9041-9048. [PMID: 35696451 DOI: 10.1021/acsnano.2c00396] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Surface plasmons, merging photonics and electronics in nanoscale dimensions, have been the cornerstones in integrated informatics, precision detection, high-resolution imaging, and energy conversion. Arising from the exceptional Fermi-Dirac tunability, ultrafast carrier mobility, and high-field confinement, graphene offers excellent advantages for plasmon technologies and enables a variety of state-of-the-art optoelectronic applications ranging from tight-field-enhanced light sources, modulators, and photodetectors to biochemical sensors. However, it is challenging to co-excite multiple graphene plasmons on one single graphene sheet with high density, a key step toward plasmonic wavelength-division multiplexing and next-generation dynamical optoelectronics. Here, we report the heteroepitaxial growth of a polycrystalline graphene monolayer with patterned gradient grain boundary density, which is synthesized by creating diverse nanosized local growth environments on a centimeter-scale substrate with a polycrystalline graphene ring seed in chemical vapor deposition. Such geometry enables plasmonic co-excitation with varied wavelength diversification in the nanoscale. Via using high-resolution scanning near-field optical microscopy, we demonstrate rich plasmon standing waves, even bright plasmonic hotspots with a size up to 3 μm. Moreover, by changing the grain boundary density and annealing, we find the local plasmonic wavelengths are widely tunable, from 70 to 300 nm. Theoretical modeling supports that such plasmonic versatility is due to the grain boundary-induced plasmon-phonon interactions through random phase approximation. The seed-induced heteroepitaxial growth provides a promising way for the grain boundary engineering of two-dimensional materials, and the controllable grain boundary-based plasmon co-generation and manipulation in one single graphene monolayer will facilitate the applications of graphene for plasmonics and nanophotonics.
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Affiliation(s)
- Teng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
| | - Baicheng Yao
- Key Laboratory of Optical Fiber Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China
| | - Zebo Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Qiaoliang Bao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, People's Republic of China
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6
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Wei YN, Hu XG, Zhang JW, Tong B, Du JH, Liu C, Sun DM, Liu C. Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer. Small 2022; 18:e2201840. [PMID: 35561072 DOI: 10.1002/smll.202201840] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 04/23/2022] [Indexed: 06/15/2023]
Abstract
Germanium (Ge)-based devices are recognized as one of the most promising next-generation technologies for extending Moore's law. However, one of the critical issues is Fermi-level pinning (FLP) at the metal/n-Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer-scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n-Ge. These devices also indicate that the metal-induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer-scale planar diode array is fabricated at room temperature without using the traditional ion-implantation and annealing technology, achieving an on-to-off current ratio of 4.59 × 104 . This work provides a new way of FLP modulation that helps to improve device performance with new materials.
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Affiliation(s)
- Yu-Ning Wei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Xian-Gang Hu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Jian-Wei Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong-Nanhu Road, Changchun, 130033, P. R. China
| | - Bo Tong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Jin-Hong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
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7
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Sun Y, Li P, Kauppinen EI, Sun DM, Ohno Y. Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks. RSC Adv 2022; 12:16291-16295. [PMID: 35733664 PMCID: PMC9157530 DOI: 10.1039/d2ra02088b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Accepted: 05/24/2022] [Indexed: 11/21/2022] Open
Abstract
Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 107–108 are realized for CNT TFTs with mobility of ∼500 cm2 V−1 s−1. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs. A full comprehension about the key factors to achieve ultrahigh on/off ratio thin-film transistors using as-grown CNT networks has been provided, including residual surfactants, chemical doping and CNT diameter.![]()
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Affiliation(s)
- Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China .,School of Material Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Pengpeng Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China .,School of Material Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Esko I Kauppinen
- Department of Applied Physics, Aalto University School of Science PO Box 15100 FI-00076 Aalto Espoo Finland
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China .,School of Material Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Yutaka Ohno
- Department of Quantum Engineering, Nagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan
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8
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Jian Y, Sun Y, Feng S, Zang C, Li B, Qiu S, Li QW, Yan X, Sun DM. Laminated three-dimensional carbon nanotube integrated circuits. Nanoscale 2022; 14:7049-7054. [PMID: 35475485 DOI: 10.1039/d2nr01498j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The fabrication procedure for each layer of the device in monolithic three-dimensional (3D) integration still follows the design philosophy of traditional planar silicon-based circuits, and such integrated circuits will ultimately be limited by the same scaling constraints that face silicon field-effect transistors. We report the direct formation of laminated 3D integrated circuits by the layer-by-layer stacking of each component through two different techniques. One is to use carbon nanotubes (CNTs) as the channels of thin-film transistors because of their low-temperature fabrication and layer-to-layer transfer capabilities. The other is to use a suitable separator between every two layers to isolate them, because the separator is not only able to maintain the stability of the performance of each component after coating, but is also a good insulator that can prevent interlayer interactions. A 5-stage CNT ring oscillator laminated onto a single inverter is finally reported, which can reduce the device area by approximately 80%, and should be greatly helpful for the continuous improvement of device functionality and integration.
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Affiliation(s)
- Yang Jian
- College of Information Science and Engineering, Northeastern University, 3-11 Wenhua Road, Shenyang, 110819, China.
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Physical Science and Technology, ShanghaiTech University, 393 Huaxiazhong Road, Shanghai, 200031, China
| | - Chao Zang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China.
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China.
| | - Xin Yan
- College of Information Science and Engineering, Northeastern University, 3-11 Wenhua Road, Shenyang, 110819, China.
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China.
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
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9
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Li B, Zhu QB, Cui C, Liu C, Wang ZH, Feng S, Sun Y, Zhu HL, Su X, Zhao YM, Zhang HW, Yao J, Qiu S, Li QW, Wang XM, Wang XH, Cheng HM, Sun DM. Patterning of Wafer-Scale MXene Films for High-Performance Image Sensor Arrays. Adv Mater 2022; 34:e2201298. [PMID: 35226775 DOI: 10.1002/adma.202201298] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2022] [Indexed: 06/14/2023]
Abstract
As a rapidly growing family of 2D transition metal carbides and nitrides, MXenes are recognized as promising materials for the development of future electronics and optoelectronics. So far, the reported patterning methods for MXene films lack efficiency, resolution, and compatibility, resulting in limited device integration and performance. Here, a high-performance MXene image sensor array fabricated by a wafer-scale combination patterning method of an MXene film is reported. This method combines MXene centrifugation, spin-coating, photolithography, and dry-etching and is highly compatible with mainstream semiconductor processing, with a resolution up to 2 µm, which is at least 100 times higher than other large-area patterning methods reported previously. As a result, a high-density integrated array of 1024-pixel Ti3 C2 Tx /Si photodetectors with a detectivity of 7.73 × 1014 Jones and a light-dark current ratio (Ilight /Idark ) of 6.22 × 106 , which is the ultrahigh value among all reported MXene-based photodetectors, is fabricated. This patterning technique paves a way for large-scale high-performance MXetronics compatible with mainstream semiconductor processes.
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Affiliation(s)
- Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
| | - Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
| | - Cong Cui
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
| | - Zuo-Hua Wang
- National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, College of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Physical Science and Technology, ShanghaiTech University, 393 Huaxiazhong Road, Shanghai, 200031, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Hong-Lei Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
| | - Xin Su
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210008, China
| | - Yi-Ming Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
| | - Hong-Wang Zhang
- National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, College of Mechanical Engineering, Yanshan University, Qinhuangdao, 066004, China
| | - Jian Yao
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China
| | - Xiao-Mu Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210008, China
| | - Xiao-Hui Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen, 518055, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, China
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10
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Fan XT, Liu N, Long Y, Xia K, Sun DM, Zhang Y. [Successful treatment of fulminant myocarditis in a child by extracorporeal membrane oxygenation combined with percutaneous atrial septostomy: a case report]. Zhonghua Xin Xue Guan Bing Za Zhi 2022; 50:289-291. [PMID: 35340149 DOI: 10.3760/cma.j.cn112148-20210415-00344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Affiliation(s)
- X T Fan
- Department of Cardiology,Wuhan Children's Hospital, Tongji Medical College,Huazhong University of Science & Technology, Wuhan 430000,China
| | - N Liu
- Department of Cardiology,Wuhan Children's Hospital, Tongji Medical College,Huazhong University of Science & Technology, Wuhan 430000,China
| | - Y Long
- Department of Cardiology,Wuhan Children's Hospital, Tongji Medical College,Huazhong University of Science & Technology, Wuhan 430000,China
| | - K Xia
- Department of Cardiology,Wuhan Children's Hospital, Tongji Medical College,Huazhong University of Science & Technology, Wuhan 430000,China
| | - D M Sun
- Department of Cardiology,Wuhan Children's Hospital, Tongji Medical College,Huazhong University of Science & Technology, Wuhan 430000,China
| | - Y Zhang
- Department of Cardiology,Wuhan Children's Hospital, Tongji Medical College,Huazhong University of Science & Technology, Wuhan 430000,China
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11
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Feng S, Han R, Zhang L, Liu C, Li B, Zhu H, Zhu Q, Chen W, Cheng HM, Sun DM. OUP accepted manuscript. Natl Sci Rev 2022; 9:nwac088. [PMID: 35992241 PMCID: PMC9385463 DOI: 10.1093/nsr/nwac088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 04/23/2022] [Accepted: 04/25/2022] [Indexed: 11/12/2022] Open
Abstract
The photodetector is a key component in optoelectronic integrated circuits. Although there are various device structures and mechanisms, the output current changes either from rectified to fully-on or from fully-off to fully-on after illumination. A device that changes the output current from fully-off to rectified should be possible. We report the first photon-controlled diode based on a n/n− molybdenum disulfide junction. Schottky junctions formed at the cathode and anode either prevent or allow the device to be rectifying, so that the output current of the device changes from fully-off to rectified. By increasing the thickness of the photogating layer, the behavior of the device changes from a photodetector to a multifunctional photomemory with the highest non-volatile responsivity of 4.8 × 107 A/W and the longest retention time of 6.5 × 106 s reported so far. Furthermore, a 3 × 3 photomemory array without selectors shows no crosstalk between adjacent devices and has optical signal-processing functions including wavelength and power-density selectivity.
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Affiliation(s)
| | | | | | - Chi Liu
- Corresponding author. E-mail:
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Honglei Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Qianbing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Wei Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
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12
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Feng S, Liu C, Zhu Q, Su X, Qian W, Sun Y, Wang C, Li B, Chen M, Chen L, Chen W, Zhang L, Zhen C, Wang F, Ren W, Yin L, Wang X, Cheng HM, Sun DM. An ultrasensitive molybdenum-based double-heterojunction phototransistor. Nat Commun 2021; 12:4094. [PMID: 34215747 PMCID: PMC8253832 DOI: 10.1038/s41467-021-24397-x] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2021] [Accepted: 06/02/2021] [Indexed: 11/10/2022] Open
Abstract
Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS2 channel and α-MoO3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8 × 1016 cm Hz1/2 W-1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity.
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Affiliation(s)
- Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, PR China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China
| | - Qianbing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China
| | - Xin Su
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, PR China
| | - Wangwang Qian
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China
| | - Chengxu Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China
| | - Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China
| | - Wei Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China
| | - Lili Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China
| | - Chao Zhen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China
| | - Feijiu Wang
- Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng, PR China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China
| | - Lichang Yin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China. .,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China.
| | - Xiaomu Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, PR China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China. .,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China. .,Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, PR China.
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, PR China. .,School of Material Science and Engineering, University of Science and Technology of China, Hefei, PR China.
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13
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Dong LW, Sun XN, Ma ZC, Fu J, Liu FJ, Huang BL, Liang DC, Sun DM, Lan C. Increased Vδ1γδT cells predominantly contributed to IL-17 production in the development of adult human post-infectious irritable bowel syndrome. BMC Gastroenterol 2021; 21:271. [PMID: 34193069 PMCID: PMC8243880 DOI: 10.1186/s12876-021-01722-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Received: 04/19/2020] [Accepted: 03/15/2021] [Indexed: 11/24/2022] Open
Abstract
Background γδT cells play an important role in the mucosa inflammation and immunity-associated disorders. Our previous study reported that γδ T cells producing IL-17 were involved in the pathogenesis of post-infectious irritable bowel syndrome (PI-IBS). However, their subset characteristic profile in this kind of disease remains unclear. Thus the current study’s aim is to investigate the functionally predominant subset and its role in PI-IBS. Methods The total T cells were collected from the peripheral blood of patients with PI-IBS. The peripheral proportion of Vδ1 and Vδ2 subset was detected by FACS after stained with anti δ1-PE and anti δ2-APC. The local colonic proportion of this two subsets were measured under laser confocal fluorescence microscope. Vδ1 γδ T cells were enriched from the total peripheral T cells by minoantibody-immuno-microbeads (MACS) method and cultured, functionally evaluated by CCK-8 assay (proliferation), CD69/CD62L molecules expression assay (activation) and ELISA (IL-17 production) respectively. Results 1. Vδ1 γδ T cells significantly increased while Vδ2 γδ T cells remained unchanged in both the peripheral blood and local colonic tissue from PI-IBS patients (p < 0.05). 2. When cultured in vitro, the Vδ1 γδ T cells remarkably proliferated, activated and produced IL-17 (p < 0.05). Conclusions Our results suggest that Vδ1 γδ T cells was the predominant γδ T cells subset in both peripheral and intestinal tissue, and was the major IL-17 producing γδ T cells in PI-IBS.
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Affiliation(s)
- L W Dong
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China
| | - X N Sun
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China
| | - Z C Ma
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China
| | - J Fu
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China
| | - F J Liu
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China
| | - B L Huang
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China
| | - D C Liang
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China
| | - D M Sun
- Doheny Eye Institute, Department of Ophthalmology, David Geffen School of Medicine, University of California, Los Angeles,, Los Angeles, CA, 90033, USA
| | - Cheng Lan
- Department of Gastroenterology, Hainan General Hospital, Affiliated Hainan Hospital of Hainan Medical University, Haikou, 570311, Hainan Province, China.
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14
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Zhu QB, Li B, Yang DD, Liu C, Feng S, Chen ML, Sun Y, Tian YN, Su X, Wang XM, Qiu S, Li QW, Li XM, Zeng HB, Cheng HM, Sun DM. A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems. Nat Commun 2021; 12:1798. [PMID: 33741964 DOI: 10.5281/zenodo.4540948] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 02/25/2021] [Indexed: 05/23/2023] Open
Abstract
The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate the flexibility, sophistication, and adaptability of animal systems, but also how to do so with computational efficiency and elegance. Similar to biological systems, these neuromorphic circuits integrate functions of image sensing, memory and processing into the device, and process continuous analog brightness signal in real-time. High-integration, flexibility and ultra-sensitivity are essential for practical artificial vision systems that attempt to emulate biological processing. Here, we present a flexible optoelectronic sensor array of 1024 pixels using a combination of carbon nanotubes and perovskite quantum dots as active materials for an efficient neuromorphic vision system. The device has an extraordinary sensitivity to light with a responsivity of 5.1 × 107 A/W and a specific detectivity of 2 × 1016 Jones, and demonstrates neuromorphic reinforcement learning by training the sensor array with a weak light pulse of 1 μW/cm2.
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Affiliation(s)
- Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Dan-Dan Yang
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Ya-Nan Tian
- College of Information Science and Engineering, Northeastern University, Shenyang, China
| | - Xin Su
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Xiao-Mu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Xiao-Ming Li
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China.
| | - Hai-Bo Zeng
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China.
- Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, China.
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- School of Material Science and Engineering, University of Science and Technology of China, Hefei, China.
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15
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Zhu QB, Li B, Yang DD, Liu C, Feng S, Chen ML, Sun Y, Tian YN, Su X, Wang XM, Qiu S, Li QW, Li XM, Zeng HB, Cheng HM, Sun DM. A flexible ultrasensitive optoelectronic sensor array for neuromorphic vision systems. Nat Commun 2021; 12:1798. [PMID: 33741964 PMCID: PMC7979753 DOI: 10.1038/s41467-021-22047-w] [Citation(s) in RCA: 78] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 02/25/2021] [Indexed: 11/21/2022] Open
Abstract
The challenges of developing neuromorphic vision systems inspired by the human eye come not only from how to recreate the flexibility, sophistication, and adaptability of animal systems, but also how to do so with computational efficiency and elegance. Similar to biological systems, these neuromorphic circuits integrate functions of image sensing, memory and processing into the device, and process continuous analog brightness signal in real-time. High-integration, flexibility and ultra-sensitivity are essential for practical artificial vision systems that attempt to emulate biological processing. Here, we present a flexible optoelectronic sensor array of 1024 pixels using a combination of carbon nanotubes and perovskite quantum dots as active materials for an efficient neuromorphic vision system. The device has an extraordinary sensitivity to light with a responsivity of 5.1 × 107 A/W and a specific detectivity of 2 × 1016 Jones, and demonstrates neuromorphic reinforcement learning by training the sensor array with a weak light pulse of 1 μW/cm2. To emulate nature biological processing, highly-integrated ultra-sensitive artificial neuromorphic system is highly desirable. Here, the authors report flexible sensor array of 1024 pixels using combination of carbon nanotubes and perovskite QDs as active matetials, achieving highly responsive device for reinforcement learning.
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Affiliation(s)
- Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China
| | - Dan-Dan Yang
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Ya-Nan Tian
- College of Information Science and Engineering, Northeastern University, Shenyang, China
| | - Xin Su
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Xiao-Mu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Xiao-Ming Li
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China.
| | - Hai-Bo Zeng
- College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. .,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China. .,Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, China.
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China. .,School of Material Science and Engineering, University of Science and Technology of China, Hefei, China.
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16
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Aziz T, Wei S, Sun Y, Ma LP, Pei S, Dong S, Ren W, Liu Q, Cheng HM, Sun DM. High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient. Nanoscale 2021; 13:2448-2455. [PMID: 33464264 DOI: 10.1039/d0nr07888c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its redox reaction with an active metal electrode, so the obtained RRAMs are typically plagued by inferior performance and reliability. Here, we report a strategy to develop high-performance flexible RRAMs by using graphene oxidized with a perpendicular oxidation gradient as the resistive layer. In contrast to a homogeneous oxide, this graphene together with its distinctive inter-layer oxygen diffusion path enables excellent oxygen ion/vacancy diffusion. Without an interfacial redox reaction, oxygen ions can diffuse to form conductive filaments with two inert metal electrodes by applying a bias voltage. Compared with state-of-the-art graphene oxide RRAMs, these graphene RRAMs have shown superior performance including a high on-off current ratio of ∼105, long-term retention of ∼106 s, reproducibility over 104 cycles and long-term flexibility at a bending strain of 0.6%, indicating that the material has great potential in wearable smart data-storage devices.
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Affiliation(s)
- Tariq Aziz
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China
| | - Shijing Wei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China and Key Laboratory of Photovoltaic Materials, Henan University, 1 Jinming Road, Kaifeng, 475004, P. R. China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Lai-Peng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Songfeng Pei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Shichao Dong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Qi Liu
- Frontier Institute of Chip and System, Fudan University, 2005 Shonghu Road, Shanghai 200433, P. R. China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, P. R. China and Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, 1001 Xueyuan Road, Shenzhen, 518055, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China. and School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
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17
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Ma LP, Wu Z, Yin L, Zhang D, Dong S, Zhang Q, Chen ML, Ma W, Zhang Z, Du J, Sun DM, Liu K, Duan X, Ma D, Cheng HM, Ren W. Pushing the conductance and transparency limit of monolayer graphene electrodes for flexible organic light-emitting diodes. Proc Natl Acad Sci U S A 2020; 117:25991-25998. [PMID: 33020292 PMCID: PMC7584903 DOI: 10.1073/pnas.1922521117] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
Abstract
Graphene has emerged as an attractive candidate for flexible transparent electrode (FTE) for a new generation of flexible optoelectronics. Despite tremendous potential and broad earlier interest, the promise of graphene FTE has been plagued by the intrinsic trade-off between electrical conductance and transparency with a figure of merit (σDC/σOp) considerably lower than that of the state-of-the-art ITO electrodes (σDC/σOp <123 for graphene vs. ∼240 for ITO). Here we report a synergistic electrical/optical modulation strategy to simultaneously boost the conductance and transparency. We show that a tetrakis(pentafluorophenyl)boric acid (HTB) coating can function as highly effective hole doping layer to increase the conductance of monolayer graphene by sevenfold and at the same time as an anti-reflective layer to boost the visible transmittance to 98.8%. Such simultaneous improvement in conductance and transparency breaks previous limit in graphene FTEs and yields an unprecedented figure of merit (σDC/σOp ∼323) that rivals the best commercial ITO electrode. Using the tailored monolayer graphene as the flexible anode, we further demonstrate high-performance green organic light-emitting diodes (OLEDs) with the maximum current, power and external quantum efficiencies (111.4 cd A-1, 124.9 lm W-1 and 29.7%) outperforming all comparable flexible OLEDs and surpassing that with standard rigid ITO by 43%. This study defines a straightforward pathway to tailor optoelectronic properties of monolayer graphene and to fully capture their potential as a generational FTE for flexible optoelectronics.
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Affiliation(s)
- Lai-Peng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Zhongbin Wu
- State Key Laboratory of Polymers Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 130022 Changchun, China
| | - Lichang Yin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Dingdong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Shichao Dong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Qing Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, 100871 Beijing, China
| | - Jinhong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, 100871 Beijing, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095
| | - Dongge Ma
- State Key Laboratory of Luminescent Materials & Devices, South China University of Technology, 510640 Guangzhou, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, 518055 Shenzhen, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016 Shenyang, China;
- School of Materials Science and Engineering, University of Science and Technology of China, 110016 Shenyang, China
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18
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Hong YL, Liu Z, Wang L, Zhou T, Ma W, Xu C, Feng S, Chen L, Chen ML, Sun DM, Chen XQ, Cheng HM, Ren W. Chemical vapor deposition of layered
two-dimensional MoSi2N4
materials. Science 2020; 369:670-674. [DOI: 10.1126/science.abb7023] [Citation(s) in RCA: 241] [Impact Index Per Article: 60.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2020] [Accepted: 06/09/2020] [Indexed: 01/20/2023]
Abstract
Identifying two-dimensional layered
materials in the monolayer limit has led to
discoveries of numerous new phenomena and unusual
properties. We introduced elemental silicon during
chemical vapor deposition growth of nonlayered
molybdenum nitride to passivate its surface, which
enabled the growth of centimeter-scale monolayer
films of
MoSi2N4.
This monolayer was built up by septuple atomic
layers of N-Si-N-Mo-N-Si-N, which can be viewed as
a MoN2 layer sandwiched
between two Si-N bilayers. This material exhibited
semiconducting behavior (bandgap ~1.94 electron
volts), high strength (~66 gigapascals), and
excellent ambient stability. Density functional
theory calculations predict a large family of such
monolayer structured two-dimensional layered
materials, including semiconductors, metals, and
magnetic half-metals.
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Affiliation(s)
- Yi-Lun Hong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
| | - Lei Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Tianya Zhou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, P. R. China
| | - Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, P. R. China
- Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, UK
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
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19
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Zhang HY, Li CJ, Long Y, Sun DM, Wang RG, Zhang Y. [Clinical features of children with severe adenovirus pneumonia and hemophagocytic syndrome: an analysis of 30 cases]. Zhongguo Dang Dai Er Ke Za Zhi 2020; 22:744-748. [PMID: 32669172 PMCID: PMC7389625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Subscribe] [Scholar Register] [Received: 03/08/2020] [Accepted: 05/13/2020] [Indexed: 11/12/2023]
Abstract
OBJECTIVE To study the clinical features of children with severe adenovirus pneumonia (SAP) and hemophagocytic syndrome (HPS). METHODS A retrospective analysis was performed from the chart review data of 30 children with SAP and HPS who were admitted from January 2014 to June 2019. According to the prognosis, the children were divided into a good prognosis group (n=18) and a poor prognosis group (n=12). RESULTS Among the 30 children with SAP and HPS, the ratio of male to female was 2:1. The median age of onset was 1 year and 3 months (range 3 months to 5 years), and the mean course of fever was 19±7 d. Of the 30 children, 28 (93%) experienced disease onset in January to June. High-throughput gene detection of serum pathogens showed that 16 (53%) children were positive for human adenovirus type 7 (HAdV-7), and the other 14 (47%) children were positive for HAdV antigen based on immunofluorescence assay for throat swab, with unknown type. Of all 30 children, 29 (97%) had respiratory complications, 24 (80%) had cardiovascular complications, 16 (53%) had gastrointestinal complications, and 9 (30%) had toxic encephalopathy. Eighteen children (60%) improved or recovered and 12 (40%) did not recover (3 died). Compared with the good prognosis group, the poor prognosis group had a significantly longer course from onset to diagnosis of HPS (P<0.05), significantly higher levels of fibrinogen and tumor necrosis factor-α (P<0.05), and a significantly lower level of interferon-γ (P<0.05). The mean follow-up time was 6±2 months; 11 (41%) children recovered, 1 (4%) experienced recurrence of HPS, and 15 (56%) had the sequela of post-infectious bronchiolitis obliterans (PIBO). CONCLUSIONS HPS may be observed in children with SAP, and PIBO is the most common sequela of SAP.
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Affiliation(s)
- Hua-Yong Zhang
- Department of Cardiology, Wuhan Children's Hospital/Wuhan Maternal and Child Healthcare Hospital, Tongji Medical College, Huazhong University of Science & Technology, Wuhan 430016, China.
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20
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Qu TY, Sun Y, Chen ML, Liu ZB, Zhu QB, Wang BW, Zhao TY, Liu C, Tan J, Qiu S, Li QW, Han Z, Wang W, Cheng HM, Sun DM. A Flexible Carbon Nanotube Sen-Memory Device. Adv Mater 2020; 32:e1907288. [PMID: 31977113 DOI: 10.1002/adma.201907288] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Revised: 12/25/2019] [Indexed: 05/23/2023]
Abstract
In a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of ≈106 , a long-term retention of ≈108 s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.
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Affiliation(s)
- Ting-Yu Qu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Zhi-Bo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Bing-Wei Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Tian-Yang Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Jun Tan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, China
| | - Zheng Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
| | - Wei Wang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, 1001 Xueyun Road, Shenzhen, 518055, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, China
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21
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Zhao T, Xu C, Ma W, Liu Z, Zhou T, Liu Z, Feng S, Zhu M, Kang N, Sun DM, Cheng HM, Ren W. Ultrafast growth of nanocrystalline graphene films by quenching and grain-size-dependent strength and bandgap opening. Nat Commun 2019; 10:4854. [PMID: 31649240 PMCID: PMC6813332 DOI: 10.1038/s41467-019-12662-z] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2019] [Accepted: 09/21/2019] [Indexed: 11/09/2022] Open
Abstract
Nanocrystallization is a well-known strategy to dramatically tune the properties of materials; however, the grain-size effect of graphene at the nanometer scale remains unknown experimentally because of the lack of nanocrystalline samples. Here we report an ultrafast growth of graphene films within a few seconds by quenching a hot metal foil in liquid carbon source. Using Pt foil and ethanol as examples, four kinds of nanocrystalline graphene films with average grain size of ~3.6, 5.8, 8.0, and 10.3 nm are synthesized. It is found that the effect of grain boundary becomes more pronounced at the nanometer scale. In comparison with pristine graphene, the 3.6 nm-grained film retains high strength (101 GPa) and Young's modulus (576 GPa), whereas the electrical conductivity is declined by over 100 times, showing semiconducting behavior with a bandgap of ~50 meV. This liquid-phase precursor quenching method opens possibilities for ultrafast synthesis of typical graphene materials and other two-dimensional nanocrystalline materials.
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Affiliation(s)
- Tong Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Tianya Zhou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Zhen Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Ning Kang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China.,Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China. .,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China.
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22
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Ma W, Chen ML, Yin L, Liu Z, Li H, Xu C, Xin X, Sun DM, Cheng HM, Ren W. Interlayer epitaxy of wafer-scale high-quality uniform AB-stacked bilayer graphene films on liquid Pt 3Si/solid Pt. Nat Commun 2019; 10:2809. [PMID: 31243279 PMCID: PMC6594936 DOI: 10.1038/s41467-019-10691-2] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2019] [Accepted: 05/15/2019] [Indexed: 11/09/2022] Open
Abstract
Large-area high-quality AB-stacked bilayer graphene films are highly desired for the applications in electronics, photonics and spintronics. However, the existing growth methods can only produce discontinuous bilayer graphene with variable stacking orders because of the non-uniform surface and strong potential field of the solid substrates used. Here we report the growth of wafer-scale continuous uniform AB-stacked bilayer graphene films on a liquid Pt3Si/solid Pt substrate by chemical vapor deposition. The films show quality, mechanical and electrical properties comparable to the mechanically exfoliated samples. Growth mechanism studies show that the second layer is grown underneath the first layer by precipitation of carbon atoms from the solid Pt, and the small energy requirements for the movements of graphene nucleus on the liquid Pt3Si enables the interlayer epitaxy to form energy-favorable AB stacking. This interlayer epitaxy also allows the growth of ABA-stacked trilayer graphene and is applicable to other liquid/solid substrates. Specific stacking sequence of graphene can enable observation of unusual properties however it has been difficult to obtain this over wider areas. Here, the authors report wafer-scale growth of 100% AB-stacked bilayer graphene films by CVD on liquid Pt3Si/solid Pt substrates showing high quality and improved mechanical properties comparable to the mechanically exfoliated flakes.
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Affiliation(s)
- Wei Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China.,School of Material Science and Engineering, University of Science and Technology of China, 110016, Shenyang, P. R. China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China.,School of Material Science and Engineering, University of Science and Technology of China, 110016, Shenyang, P. R. China
| | - Lichang Yin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China
| | - Hui Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China.,School of Material Science and Engineering, University of Science and Technology of China, 110016, Shenyang, P. R. China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China
| | - Xing Xin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China.,University of Chinese Academy of Sciences, 110016, Shenyang, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China.,School of Material Science and Engineering, University of Science and Technology of China, 110016, Shenyang, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China.,School of Material Science and Engineering, University of Science and Technology of China, 110016, Shenyang, P. R. China.,Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, 1001 Xueyuan Road, 518055, Shenzhen, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, P. R. China. .,School of Material Science and Engineering, University of Science and Technology of China, 110016, Shenyang, P. R. China.
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23
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Sun DM, Ding Y, Zhnag Y, Xia K. [Serum lipid profile in children with different subtypes of juvenile idiopathic arthritis]. Zhongguo Dang Dai Er Ke Za Zhi 2019; 21:547-551. [PMID: 31208507 PMCID: PMC7389569 DOI: 10.7499/j.issn.1008-8830.2019.06.009] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Subscribe] [Scholar Register] [Received: 11/15/2018] [Accepted: 04/29/2019] [Indexed: 06/09/2023]
Abstract
OBJECTIVE To study the serum lipid profile in children with different subtypes of juvenile idiopathic arthritis (JIA) during active and remission stages, as well as the long-term risk of atherosclerosis in children with JIA. METHODS A total of 128 children newly diagnosed with active JIA were divided into oligoarticular JIA group with 48 children, polyarticular JIA group with 38 children, systemic JIA group with 22 children, and enthesitis-related JIA group with 20 children. According to the presence or absence of rheumatoid factor (RF), the polyarticular JIA group was further divided into RF-positive polyarticular JIA group with 15 children and RF-negative polyarticular JIA group with 23 children. A total of 45 children who underwent physical examination were randomly selected as healthy control group. The serum levels of total cholesterol (TC), triglyceride (TG), low-density lipoprotein cholesterol (LDL-C), and high-density lipoprotein cholesterol (HDL-C) were measured and compared between groups. Blood lipid parameters were reexamined for 87 children in the remission stage after treatment and were compared with those in the active stage. RESULTS Compared with the healthy control group, the systemic JIA group and the RF-positive polyarticular JIA group had a significant reduction in HDL-C and a significant increase in TG (P<0.05) in the active stage, while there were no significant differences in TC and LDL-C (P>0.05). There were no significant differences in blood lipid parameters between the other subtype JIA groups and the healthy control group (P>0.05). The RF-positive polyarticular JIA group had a significant increase in plasma HDL-C from the active stage to the remission stage (P<0.05), while the other subtype JIA groups had no significant changes in blood lipid parameters (P>0.05). CONCLUSIONS Dyslipidemia may be observed in the active stage of children with systemic and RF-positive polyarticular JIA, with improvement in the remission stage of children with RF-positive polyarticular JIA. Further studies are needed to observe the long-term risk of atherosclerosis.
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Affiliation(s)
- Dong-Ming Sun
- Department of Cardiology, Wuhan Children's Hospital/Wuhan Maternal and Child Healthcare Hospital, Tongji Medical College, Huazhong University of Science & Technology, Wuhan 430016, China.
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Zhang D, Du J, Hong YL, Zhang W, Wang X, Jin H, Burn PL, Yu J, Chen M, Sun DM, Li M, Liu L, Ma LP, Cheng HM, Ren W. A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices. ACS Nano 2019; 13:5513-5522. [PMID: 31013418 DOI: 10.1021/acsnano.9b00330] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Clean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials grown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe2 and WS2 single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe2 retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling high-performance field effect transistors with mobility and ON/OFF ratio ∼10 times higher than those made by PMMA-transferred WSe2. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of ∼6.4% achieved.
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Affiliation(s)
- Dingdong Zhang
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
| | - Jinhong Du
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
| | - Yi-Lun Hong
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
| | - Weimin Zhang
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
| | - Xiao Wang
- Centre for Organic Photonics & Electronics, School of Chemistry and Molecular Biosciences , The University of Queensland , Brisbane QLD 4072 , Australia
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China (UESTC) , Chengdu 610054 , P.R. China
| | - Hui Jin
- Centre for Organic Photonics & Electronics, School of Chemistry and Molecular Biosciences , The University of Queensland , Brisbane QLD 4072 , Australia
| | - Paul L Burn
- Centre for Organic Photonics & Electronics, School of Chemistry and Molecular Biosciences , The University of Queensland , Brisbane QLD 4072 , Australia
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China (UESTC) , Chengdu 610054 , P.R. China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
| | - Meng Li
- Shenyang Institute of Automation , Chinese Academy of Sciences , 114 Nanta Street , Shenyang 110016 , P.R. China
| | - Lianqing Liu
- Shenyang Institute of Automation , Chinese Academy of Sciences , 114 Nanta Street , Shenyang 110016 , P.R. China
| | - Lai-Peng Ma
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute , Tsinghua University , 1001 Xueyuan Road , Shenzhen 518055 , P.R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , P.R. China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , P.R. China
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Zhao TY, Zhang DD, Qu TY, Fang LL, Zhu QB, Sun Y, Cai TH, Chen ML, Wang BW, Du JH, Ren WC, Yan X, Li QW, Qiu S, Sun DM. Flexible 64 × 64 Pixel AMOLED Displays Driven by Uniform Carbon Nanotube Thin-Film Transistors. ACS Appl Mater Interfaces 2019; 11:11699-11705. [PMID: 30839190 DOI: 10.1021/acsami.8b17909] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Carbon nanotube (CNT) thin-film transistors are expected to be promising for use in flexible electronics including flexible and transparent integrated circuits and in wearable chemical and physical sensors and for driving the circuits of flexible display panels. However, current devices based on CNT channels suffer from poor performance uniformity and low manufacturing yield; therefore, they are still far from being practical. This is usually caused by nonuniform deposition of the semiconducting CNTs and the rough surface of flexible substrates. Here, we report CNT thin-film transistors (TFTs) driving a flexible 64 × 64 pixel active matrix light-emitting diode display (AMOLED) by improving the formation of uniform CNT films and developing a new pretreatment technique for flexible substrates. The achieved AMOLED has uniform brightness and a high yield of 99.93% in its 4096 pixels. More than 8000 TFTs with high-purity semiconducting CNTs as the channel material show an average on-off current ratio of ∼107 and a carrier mobility of 16 cm2 V-1 s-1. The standard deviations of the on-state current and the carrier mobility are 4.1 and 6.5%, respectively. Our result shows that the panel driven by high-purity semiconducting CNTs is a promising strategy for the development of next-generation flexible, large-area displays.
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Affiliation(s)
- Tian-Yang Zhao
- College of Information Science and Engineering , Northeastern University , 3-11 Wenhua Road , Shenyang 110819 , China
| | - Ding-Dong Zhang
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
- School of Material Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , China
| | - Ting-Yu Qu
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
| | - Lin-Lin Fang
- Wuhan China Star Optoelectronics Technology Co., Ltd. , 8 Zuoling Road , Wuhan 430078 , China
| | - Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
- School of Material Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
| | - Tian-Hong Cai
- College of Information Science and Engineering , Northeastern University , 3-11 Wenhua Road , Shenyang 110819 , China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
- School of Material Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , China
| | - Bing-Wei Wang
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
- School of Material Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , China
| | - Jin-Hong Du
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
- School of Material Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , China
| | - Wen-Cai Ren
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
- School of Material Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , China
| | - Xin Yan
- College of Information Science and Engineering , Northeastern University , 3-11 Wenhua Road , Shenyang 110819 , China
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , 398 Ruoshui Road , Suzhou 215123 , China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , 398 Ruoshui Road , Suzhou 215123 , China
| | - Dong-Ming Sun
- College of Information Science and Engineering , Northeastern University , 3-11 Wenhua Road , Shenyang 110819 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , China
- School of Material Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , China
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Jin Q, Jiang S, Zhao Y, Wang D, Qiu J, Tang DM, Tan J, Sun DM, Hou PX, Chen XQ, Tai K, Gao N, Liu C, Cheng HM, Jiang X. Flexible layer-structured Bi 2Te 3 thermoelectric on a carbon nanotube scaffold. Nat Mater 2019; 18:62-68. [PMID: 30455446 DOI: 10.1038/s41563-018-0217-z] [Citation(s) in RCA: 101] [Impact Index Per Article: 20.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2018] [Accepted: 10/04/2018] [Indexed: 05/28/2023]
Abstract
Inorganic chalcogenides are traditional high-performance thermoelectric materials. However, they suffer from intrinsic brittleness and it is very difficult to obtain materials with both high thermoelectric ability and good flexibility. Here, we report a flexible thermoelectric material comprising highly ordered Bi2Te3 nanocrystals anchored on a single-walled carbon nanotube (SWCNT) network, where a crystallographic relationship exists between the Bi2Te3 <[Formula: see text]> orientation and SWCNT bundle axis. This material has a power factor of ~1,600 μW m-1 K-2 at room temperature, decreasing to 1,100 μW m-1 K-2 at 473 K. With a low in-plane lattice thermal conductivity of 0.26 ± 0.03 W m-1 K-1, a maximum thermoelectric figure of merit (ZT) of 0.89 at room temperature is achieved, originating from a strong phonon scattering effect. The origin of the excellent flexibility and thermoelectric performance of the Bi2Te3-SWCNT material is attributed, by experimental and computational evidence, to its crystal orientation, interface and nanopore structure. Our results provide insight into the design and fabrication of high-performance flexible thermoelectric materials.
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Affiliation(s)
- Qun Jin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- University of Chinese Academy of Sciences, Shenyang, China
| | - Song Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- University of Chinese Academy of Sciences, Shenyang, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
| | - Yang Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Dong Wang
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Jianhang Qiu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Dai-Ming Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
- World Premier International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Jun Tan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
| | - Kaiping Tai
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.
| | - Ning Gao
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China.
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China.
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
- Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
- Department of Materials Science and Engineering, University of Science and Technology of China, Shenyang, China
- Institute of Materials Engineering, University of Siegen, Siegen, Germany
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27
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Wang BW, Jiang S, Zhu QB, Sun Y, Luan J, Hou PX, Qiu S, Li QW, Liu C, Sun DM, Cheng HM. Continuous Fabrication of Meter-Scale Single-Wall Carbon Nanotube Films and their Use in Flexible and Transparent Integrated Circuits. Adv Mater 2018; 30:e1802057. [PMID: 29952030 DOI: 10.1002/adma.201802057] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2018] [Revised: 05/25/2018] [Indexed: 06/08/2023]
Abstract
Single-wall carbon nanotubes (SWCNTs), especially in the form of large-area and high-quality thin films, are a promising material for use in flexible and transparent electronics. Here, a continuous synthesis, deposition, and transfer technique is reported for the fabrication of meter-scale SWCNT thin films, which have an excellent optoelectrical performance including a low sheet resistance of 65 Ω/◽ with a transmittance of 90% at a wavelength of 550 nm. Using these SWCNT thin films, high-performance all-CNT thin-film transistors and integrated circuits are demonstrated, including 101-stage ring oscillators. The results pave the way for the future development of large-scale, flexible, and transparent electronics based on CNT thin films.
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Affiliation(s)
- Bing-Wei Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, P. R. China
| | - Song Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Physical Science and Technology, ShanghaiTech University, 393 Huaxiazhong Road, Shanghai, 200031, P. R. China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China
- University of Chinese Academy of Sciences, 19 A Yuquan Road, Beijing, 100049, P. R. China
| | - Qian-Bing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, P. R. China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Jian Luan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Song Qiu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, P. R. China
| | - Qing-Wen Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, P. R. China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, 96 Jinzhai Road, Hefei, 230026, P. R. China
- Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, 1001 Xueyuan Road, Shenzhen, 518055, P. R. China
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28
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Jiang S, Hou PX, Chen ML, Wang BW, Sun DM, Tang DM, Jin Q, Guo QX, Zhang DD, Du JH, Tai KP, Tan J, Kauppinen EI, Liu C, Cheng HM. Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes. Sci Adv 2018; 4:eaap9264. [PMID: 29736413 PMCID: PMC5935479 DOI: 10.1126/sciadv.aap9264] [Citation(s) in RCA: 64] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2017] [Accepted: 03/16/2018] [Indexed: 05/22/2023]
Abstract
Single-wall carbon nanotubes (SWCNTs) are ideal for fabricating transparent conductive films because of their small diameter, good optical and electrical properties, and excellent flexibility. However, a high intertube Schottky junction resistance, together with the existence of aggregated bundles of SWCNTs, leads to a degraded optoelectronic performance of the films. We report a network of isolated SWCNTs prepared by an injection floating catalyst chemical vapor deposition method, in which crossed SWCNTs are welded together by graphitic carbon. Pristine SWCNT films show a record low sheet resistance of 41 ohm □-1 at 90% transmittance for 550-nm light. After HNO3 treatment, the sheet resistance further decreases to 25 ohm □-1. Organic light-emitting diodes using this SWCNT film as anodes demonstrate a low turn-on voltage of 2.5 V, a high current efficiency of 75 cd A-1, and excellent flexibility. Investigation of isolated SWCNT-based field-effect transistors shows that the carbon-welded joints convert the Schottky contacts between metallic and semiconducting SWCNTs into near-ohmic ones, which significantly improves the conductivity of the transparent SWCNT network. Our work provides a new avenue of assembling individual SWCNTs into macroscopic thin films, which demonstrate great potential for use as transparent electrodes in various flexible electronics.
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Affiliation(s)
- Song Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Bing-Wei Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Dai-Ming Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Qun Jin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing-Xun Guo
- State Key Laboratory of Polymers Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Ding-Dong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jin-Hong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Kai-Ping Tai
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jun Tan
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Esko I. Kauppinen
- Aalto University School of Science, Department of Applied Physics, PO Box 15100, FI-00076 Aalto, Espoo, Finland
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Corresponding author. (C.L.); (H.-M.C.)
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
- Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
- Corresponding author. (C.L.); (H.-M.C.)
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Liu YT, Sun DM, Shi SP, Yang X. [Comparison of Bacteria ERIC-PCR Fingerprints of Index Fingers and Contactants]. Fa Yi Xue Za Zhi 2018; 34:33-36. [PMID: 29577702 DOI: 10.3969/j.issn.1004-5619.2018.01.007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Received: 03/22/2017] [Indexed: 11/18/2022]
Abstract
OBJECTIVES To explore the bacteria relevance between index fingers and contactant' surfaces (mobile phone touch screen and desktop of personal office table). METHODS Bacteria were collected from the index fingers, mobile phone touch screen and desktop of personal office table of 10 volunteers. Enterobacterial repetitive intergenic consensus (ERIC)-PCR fingerprint was established by PCR amplification technique of metagenome. RESULTS There were 7 volunteers' ERIC-PCR fingerprints of index fingers matched that took from the mobile phone touch screens, and different from each other. There were 3 volunteers' ERIC-PCR fingerprints of index fingers matched that took from desk top of personal office table, and other 7 volunteers' ERIC-PCR fingerprints did not match perfectly with that took from desk top of personal office table, but had at least one similar band for both. CONCLUSIONS The bacteria on index finger shows individual specificity, which on mobile phone touching screen and personal desktop may be a new biological sample of forensic identification.
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Affiliation(s)
- Y T Liu
- East China University of Political Science and Law, Shanghai 200043, China.,Shanghai Key Laboratory of Forensic Medicine, Shanghai Forensic Service Platform, Academy of Forensic Science, Shanghai 200063, China
| | - D M Sun
- East China University of Political Science and Law, Shanghai 200043, China
| | - S P Shi
- Shanghai Key Laboratory of Forensic Medicine, Shanghai Forensic Service Platform, Academy of Forensic Science, Shanghai 200063, China
| | - X Yang
- Shanghai Key Laboratory of Forensic Medicine, Shanghai Forensic Service Platform, Academy of Forensic Science, Shanghai 200063, China
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Gao Y, Hong YL, Yin LC, Wu Z, Yang Z, Chen ML, Liu Z, Ma T, Sun DM, Ni Z, Ma XL, Cheng HM, Ren W. Ultrafast Growth of High-Quality Monolayer WSe 2 on Au. Adv Mater 2017; 29:1700990. [PMID: 28585225 DOI: 10.1002/adma.201700990] [Citation(s) in RCA: 77] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2017] [Revised: 04/09/2017] [Indexed: 05/26/2023]
Abstract
The ultrafast growth of high-quality uniform monolayer WSe2 is reported with a growth rate of ≈26 µm s-1 by chemical vapor deposition on reusable Au substrate, which is ≈2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe2 domains in ≈30 s and large-area continuous films in ≈60 s. Importantly, the ultrafast grown WSe2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to ≈143 cm2 V-1 s-1 and ON/OFF ratio up to 9 × 106 at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe2 on Au substrate.
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Affiliation(s)
- Yang Gao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Yi-Lun Hong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Li-Chang Yin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Zhangting Wu
- Department of Physics, Southeast University, Nanjing, 211189, P. R. China
| | - Zhiqing Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Teng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Zhenhua Ni
- Department of Physics, Southeast University, Nanjing, 211189, P. R. China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- Tsinghua-Berkeley Shenzhen Institute, Shenzhen, 518055, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
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31
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Zhou QS, Hu Z, Liu CJ, Li XH, Sun DM, Li P. [The aging changes of the nasal septum in adolescents]. Lin Chuang Er Bi Yan Hou Tou Jing Wai Ke Za Zhi 2017; 31:1027-1028. [PMID: 29798170 DOI: 10.13201/j.issn.1001-1781.2017.13.015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Key Words] [Subscribe] [Scholar Register] [Received: 03/09/2017] [Indexed: 06/08/2023]
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32
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Xin X, Fei Z, Ma T, Chen L, Chen ML, Xu C, Qian X, Sun DM, Ma XL, Cheng HM, Ren W. Circular Graphene Platelets with Grain Size and Orientation Gradients Grown by Chemical Vapor Deposition. Adv Mater 2017; 29:1605451. [PMID: 28240393 DOI: 10.1002/adma.201605451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2016] [Revised: 12/09/2016] [Indexed: 06/06/2023]
Abstract
Monolayer circular graphene platelets with a grain structure gradient in the radial direction are synthesized by chemical vapor deposition on immiscible W-Cu substrates. Because of the different interactions and growth behaviors of graphene on Cu and tungsten carbide, such substrates cause the formation of grain size and orientation gradients through the competition between Cu and tungsten carbide in graphene growth.
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Affiliation(s)
- Xing Xin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Zeyuan Fei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, P. R. China
| | - Teng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, P. R. China
| | - Chuan Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Xitang Qian
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, 1001 Xueyuan Road, Shenzhen, 518055, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
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Zhong P, Sun DM, Wu DH, Li TM, Liu XY, Liu HY. Serum total bilirubin levels are negatively correlated with metabolic syndrome in aged Chinese women: a community-based study. ACTA ACUST UNITED AC 2017; 50:e5252. [PMID: 28146216 PMCID: PMC5304216 DOI: 10.1590/1414-431x20165252] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2016] [Accepted: 09/29/2016] [Indexed: 12/31/2022]
Abstract
We evaluated serum total bilirubin levels as a predictor for metabolic syndrome (MetS) and investigated the relationship between serum total bilirubin levels and MetS prevalence. This cross-sectional study included 1728 participants over 65 years of age from Eastern China. Anthropometric data, lifestyle information, and previous medical history were collected. We then measured serum levels of fasting blood-glucose, total cholesterol, triglycerides, and total bilirubin, as well as alanine aminotransferase activity. The prevalence of MetS and each of its individual component were calculated per quartile of total bilirubin level. Logistic regression was used to assess the correlation between serum total bilirubin levels and MetS. Total bilirubin level in the women who did not have MetS was significantly higher than in those who had MetS (P<0.001). Serum total bilirubin quartiles were linearly and negatively correlated with MetS prevalence and hypertriglyceridemia (HTG) in females (P<0.005). Logistic regression showed that serum total bilirubin was an independent predictor of MetS for females (OR: 0.910, 95%CI: 0.863-0.960; P=0.001). The present study suggests that physiological levels of serum total bilirubin might be an independent risk factor for aged Chinese women, and the prevalence of MetS and HTG are negatively correlated to serum total bilirubin levels.
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Affiliation(s)
- P Zhong
- Department of Neurology, Shanghai TCM Integrated Hospital, Shanghai University of Chinese Medicine, Shanghai, China
| | - D M Sun
- Puxing Community Health Service Centers, Pudong New Area, Shanghai, China
| | - D H Wu
- Department of Neurology, the Third People's Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, China.,Department of Neurology, Shanghai Fifth People's Hospital, Fudan University, Shanghai, China
| | - T M Li
- Department of Neurology, Shanghai TCM Integrated Hospital, Shanghai University of Chinese Medicine, Shanghai, China
| | - X Y Liu
- Department of Neurology, Shanghai TCM Integrated Hospital, Shanghai University of Chinese Medicine, Shanghai, China
| | - H Y Liu
- Pingliang Community Health Service Centers, Yangpu Area, Shanghai, China
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Zhou J, Rogers JH, Lee SH, Sun D, Yao H, Mao JJ, Kong KY. Oral Mucosa Harbors a High Frequency of Endothelial Cells: A Novel Postnatal Cell Source for Angiogenic Regeneration. Stem Cells Dev 2016; 26:91-101. [PMID: 27832737 DOI: 10.1089/scd.2016.0175] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023] Open
Abstract
Endothelial progenitor cells/endothelial cells (EPCs/ECs) have great potential to treat pathological conditions such as cardiac infarction, muscle ischemia, and bone fractures, but isolation of EPC/ECs from existing cell sources is challenging due to their low EC frequency. We have isolated endothelial progenitor (EP)-like cells from rat oral mucosa and characterized their yield, immunophenotype, growth, and in vivo angiogenic potential. The frequency of EP-like cells derived from oral mucosa is thousands of folds higher than EPCs derived from donor-match bone marrow samples. EP-like cells from oral mucosa were positive for EC markers CD31, VE-Cadherin, and VEGFR2. Oral mucosa-derived EP-like cells displayed robust uptake of acetylated low-density lipoprotein and formed stable capillary networks in Matrigel. Subcutaneously implanted oral mucosa-derived EP-like cells anastomosed with host blood vessels, implicating their ability to elicit angiogenesis. Similar to endothelial colony-forming cells, EP-like cells from oral mucosa have a significantly higher proliferative rate than human umbilical vein endothelial cells. These findings identify a putative EPC source that is easily accessible in the oral cavity, potentially from discarded tissue specimens, and yet with robust yield and potency for angiogenesis in tissue and organ regeneration.
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Affiliation(s)
- Jian Zhou
- 1 Center for Craniofacial Regeneration, Columbia University Medical Center , New York, New York.,2 Department of General Dentistry, Capital Medical University School of Stomatology , Beijing, China
| | - Jason H Rogers
- 3 Department of Internal Medicine and the Cancer Research and Treatment Center, University of New Mexico Health Science Center , Albuquerque, New Mexico
| | - Scott H Lee
- 4 Pratt School of Engineering, Duke University , Durham, North Carolina
| | - DongMing Sun
- 5 W. M. Keck Center for Collaborative Neuroscience, Rutgers University , New Brunswick, New Jersey
| | - Hai Yao
- 6 Clemson-MUSC Bioengineering Program , Department of Craniofacial Biology, Charleston, South Carolina
| | - Jeremy J Mao
- 1 Center for Craniofacial Regeneration, Columbia University Medical Center , New York, New York
| | - Kimi Y Kong
- 1 Center for Craniofacial Regeneration, Columbia University Medical Center , New York, New York.,7 Hematology/Oncology Division, Department of Medicine, University of Florida , Gainesville, Florida
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Tao MF, Sun DM, Shao HF, Li CB, Teng YC. Poor sleep in middle-aged women is not associated with menopause per se. ACTA ACUST UNITED AC 2016; 49:e4718. [PMID: 26577848 PMCID: PMC4678654 DOI: 10.1590/1414-431x20154718] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2015] [Accepted: 08/06/2015] [Indexed: 11/22/2022]
Abstract
Whether sleep problems of menopausal women are associated with vasomotor symptoms and/or changes in estrogen levels associated with menopause or age-related changes in sleep architecture is unclear. This study aimed to determine if poor sleep in middle-aged women is correlated with menopause. This study recruited women seeking care for the first time at the menopause outpatient department of our hospital. Inclusion criteria were an age ≥40 years, not taking any medications for menopausal symptoms, and no sleeping problems or depression. Patients were assessed with the Pittsburgh Sleep Quality Index (PSQI), modified Kupperman Index (KI), and Menopause Rating Scale (MRS). A PSQI score of <7 indicated no sleep disorder and ≥7 indicated a sleep disorder. Blood specimens were analyzed for follicle-stimulating hormone and estradiol levels. A total of 244 women were included in the study; 103 (42.2%) were identified as having a sleep disorder and 141 as not having one. In addition, 156 (64%) women were postmenopausal and 88 (36%) were not menopausal. Follicle-stimulating hormone and estradiol levels were similar between the groups. Patients with a sleep disorder had a significantly higher total modified KI score and total MRS score (both, P<0.001) compared with those without a sleep disorder. Correlations of the PSQI total score with the KI and MRS were similar in menopausal and non-menopausal women. These results do not support that menopause per se specifically contributes to sleep problems.
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Affiliation(s)
- M F Tao
- Department of Obstetrics and Gynecology, Shanghai Jiao Tong University Affiliated to the Sixth People's Hospital, Shanghai, China
| | - D M Sun
- Department of Obstetrics and Gynecology, Shanghai Jiao Tong University Affiliated to the Sixth People's Hospital, Shanghai, China
| | - H F Shao
- Department of Obstetrics and Gynecology, Shanghai Jiao Tong University Affiliated to the Sixth People's Hospital, Shanghai, China
| | - C B Li
- Department of Obstetrics and Gynecology, Shanghai Jiao Tong University Affiliated to the Sixth People's Hospital, Shanghai, China
| | - Y C Teng
- Department of Obstetrics and Gynecology, Shanghai Jiao Tong University Affiliated to the Sixth People's Hospital, Shanghai, China
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36
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Hu Z, Zhou QS, Cao LH, Gu JC, Sun DM, Liu CJ, Li P, Li XH. [The imaging analysis of the age-related changes on maxillary sinus]. Lin Chung Er Bi Yan Hou Tou Jing Wai Ke Za Zhi 2016; 30:1311-1314. [PMID: 29797977 DOI: 10.13201/j.issn.1001-1781.2016.16.012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Subscribe] [Scholar Register] [Received: 03/06/2016] [Indexed: 11/12/2022]
Abstract
Objective:The aim of this study is to investigate the age-related changes rules of maxillary sinus.Method:The 540 patients (1 080 sides) with normal data of deputy sinus in spiral CT were enrolled,including 270 cases of male and female,age from 7 to 81 years old.They are divided into 9 groups according to the age:Group A at the age of 7-12 years old,Group B at the age of 13-17,Group C at the age of 18-20 years old,Group D at the age of 21-24 years old,Group E at the age of 25-28 years,Group F at the age of 29-35 years old,Group G at the age of 36-40 years old,Group H at the age of 41-65 years old,and Group I is more than 65 years old.By the gender,the patients in each group was divided into male and female groups.There are 30 cases in each group(60 sides).The volumes and the three-dimensional diameters of the maxillary sinus were measured,and the coefficient of gasification of them were calculated.Result:The maxillary sinus volume and 3 D lines have almost the same change trend along with the age between the male and female group;From 7 to 20 ages,they are increased linearly,13 to 17 fastest-growing;18 to 20 years old reached to peak;declined slightly in 21-28 years old,29-35 a second growth peak,and 36 to 40 years old have fallen sharply,to reaching a steady state after 41 years old;The gasification coefficient has no difference among all groups.Conclusion:The volume changes with the age-related on maxillary sinus is in the adolescent stage.It reaches a steady state in the middle and old age stage,and gasification coefficient on maxillary sinus has no age-related changes among all groups.
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Affiliation(s)
- Z Hu
- Department of Radiology,Central Hospital of Chaoyang City,Liaoning Province,Chaoyang,122000,China
| | - Q S Zhou
- Department of Radiology,Central Hospital of Chaoyang City,Liaoning Province,Chaoyang,122000,China
| | - L H Cao
- Department of Otorhinolaryngology,the Third Affiliated Hospital of Wenzhou Medical University
| | - J C Gu
- Department of Otolaryngology Head and Neck Surgery,the First Affiliated Hospital,Liaoning Medical University
| | - D M Sun
- Department of Radiology,Central Hospital of Chaoyang City,Liaoning Province,Chaoyang,122000,China
| | - C J Liu
- Department of Radiology,Central Hospital of Chaoyang City,Liaoning Province,Chaoyang,122000,China
| | - P Li
- Department of Radiology,Central Hospital of Chaoyang City,Liaoning Province,Chaoyang,122000,China
| | - X H Li
- Department of Radiology,Central Hospital of Chaoyang City,Liaoning Province,Chaoyang,122000,China
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Zhang F, Hou PX, Liu C, Wang BW, Jiang H, Chen ML, Sun DM, Li JC, Cong HT, Kauppinen EI, Cheng HM. Corrigendum: Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution. Nat Commun 2016; 7:11563. [PMID: 27118304 PMCID: PMC4853471 DOI: 10.1038/ncomms11563] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022] Open
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38
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Zhang F, Hou PX, Liu C, Wang BW, Jiang H, Chen ML, Sun DM, Li JC, Cong HT, Kauppinen EI, Cheng HM. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution. Nat Commun 2016; 7:11160. [PMID: 27025784 PMCID: PMC4820937 DOI: 10.1038/ncomms11160] [Citation(s) in RCA: 63] [Impact Index Per Article: 7.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2015] [Accepted: 02/26/2016] [Indexed: 11/09/2022] Open
Abstract
The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6](3-) precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance.
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Affiliation(s)
- Feng Zhang
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Bing-Wei Wang
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Hua Jiang
- Nano Materials Group, Department of Applied Physics and Center for New Materials, School of Science, Aalto University, PO Box 15100, FI-00076 Aalto, Finland
| | - Mao-Lin Chen
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Jin-Cheng Li
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Hong-Tao Cong
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Esko I. Kauppinen
- Nano Materials Group, Department of Applied Physics and Center for New Materials, School of Science, Aalto University, PO Box 15100, FI-00076 Aalto, Finland
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Advanced Carbon Division, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- Faculty of Science, Chemistry Department, King Abdulaziz University, Jeddah 21589, Saudi Arabia
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Zheng Y, Chen M, He L, Marão HF, Sun DM, Zhou J, Kim SG, Song S, Wang SL, Mao JJ. Mesenchymal dental pulp cells attenuate dentin resorption in homeostasis. J Dent Res 2015; 94:821-7. [PMID: 25762594 DOI: 10.1177/0022034515575347] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
Dentin in permanent teeth rarely undergoes resorption in development, homeostasis, or aging, in contrast to bone that undergoes periodic resorption/remodeling. The authors hypothesized that cells in the mesenchymal compartment of dental pulp attenuate osteoclastogenesis. Mononucleated and adherent cells from donor-matched rat dental pulp (dental pulp cells [DPCs]) and alveolar bone (alveolar bone cells [ABCs]) were isolated and separately cocultured with primary rat splenocytes. Primary splenocytes readily aggregated and formed osteoclast-like cells in chemically defined osteoclastogenesis medium with 20 ng/mL of macrophage colony-stimulating factor (M-CSF) and 50 ng/mL of receptor activator of nuclear factor κB ligand (RANKL). Strikingly, DPCs attenuated osteoclastogenesis when cocultured with primary splenocytes, whereas ABCs slightly but significantly promoted osteoclastogenesis. DPCs yielded ~20-fold lower RANKL expression but >2-fold higher osteoprotegerin (OPG) expression than donor-matched ABCs, yielding a RANKL/OPG ratio of 41:1 (ABCs:DPCs). Vitamin D3 significantly promoted RANKL expression in ABCs and OPG in DPCs. In vivo, rat maxillary incisors were atraumatically extracted (without any tooth fractures), followed by retrograde pulpectomy to remove DPCs and immediate replantation into the extraction sockets to allow repopulation of the surgically treated root canal with periodontal and alveolar bone-derived cells. After 8 wk, multiple dentin/root resorption lacunae were present in root dentin with robust RANKL and OPG expression. There were areas of dentin resoprtion alternating with areas of osteodentin formation in root dentin surface in the observed 8 wk. These findings suggest that DPCs of the mesenchymal compartment have an innate ability to attenuate osteoclastogenesis and that this innate ability may be responsible for the absence of dentin resorption in homeostasis. Mesenchymal attenuation of dentin resorption may have implications in internal resorption in the root canal, pulp/dentin regeneration, and root resorption in orthodontic tooth movement.
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Affiliation(s)
- Y Zheng
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA Department of Endodontics, Capital Medical University School of Stomatology, Beijing, China
| | - M Chen
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA
| | - L He
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA
| | - H F Marão
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA
| | - D M Sun
- Department of Neuroscience, Rutgers University, Piscataway, NJ, USA
| | - J Zhou
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA
| | - S G Kim
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA
| | - S Song
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA
| | - S L Wang
- Department of Endodontics, Capital Medical University School of Stomatology, Beijing, China
| | - J J Mao
- Center for Craniofacial Regeneration, Columbia University, New York, NY, USA
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Li WS, Hou PX, Liu C, Sun DM, Yuan J, Zhao SY, Yin LC, Cong H, Cheng HM. High-quality, highly concentrated semiconducting single-wall carbon nanotubes for use in field effect transistors and biosensors. ACS Nano 2013; 7:6831-9. [PMID: 23883135 DOI: 10.1021/nn401998r] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
We developed a simple and scalable selective synthesis method of high-quality, highly concentrated semiconducting single-wall carbon nanotubes (s-SWCNTs) by in situ hydrogen etching. Samples containing ~93% s-SWCNTs were obtained in bulk. These s-SWCNTs with good structural integrity showed a high oxidation resistance temperature of ~800 °C. Thin-film transistors based on the s-SWCNTs demonstrated a high carrier mobility of 21.1 cm(2) V(-1) s(-1) at an on/off ratio of 1.1 × 10(4) and a high on/off ratio of 4.0 × 10(5) with a carrier mobility of 7.0 cm(2) V(-1) s(-1). A biosensor fabricated using the s-SWCNTs had a very low dopamine detection limit of 10(-18) mol/L at room temperature.
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Affiliation(s)
- Wen-Shan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
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Sun DM, Liu C, Ren WC, Cheng HM. A review of carbon nanotube- and graphene-based flexible thin-film transistors. Small 2013; 9:1188-205. [PMID: 23519953 DOI: 10.1002/smll.201203154] [Citation(s) in RCA: 116] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2012] [Revised: 01/23/2013] [Indexed: 05/08/2023]
Abstract
Carbon nanotubes (CNTs) and graphene have attracted great attention for numerous applications for future flexible electronics, owing to their supreme properties including exceptionally high electronic conductivity and mechanical strength. Here, the progress of CNT- and graphene-based flexible thin-film transistors from material preparation, device fabrication techniques to transistor performance control is reviewed. State-of-the-art fabrication techniques of thin-film transistors are divided into three categories: solid-phase, liquid-phase, and gas-phase techniques, and possible scale-up approaches to achieve realistic production of flexible nanocarbon-based transistors are discussed. In particular, the recent progress in flexible all-carbon nanomaterial transistor research is highlighted, and this all-carbon strategy opens up a perspective to realize extremely flexible, stretchable, and transparent electronics with a relatively low-cost and fast fabrication technique, compared to traditional rigid silicon, metal and metal oxide electronics.
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Affiliation(s)
- Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
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Peng J, Fu J, Deng SZ, Wang RG, Liu L, Sun DM, Xia K. [Changes in serum insulin-like growth factor-1 and insulin-like growth factor-binding protein-3, and their significance in children with left-to-right shunt congenital heart disease associated with heart failure]. Zhongguo Dang Dai Er Ke Za Zhi 2013; 15:277-280. [PMID: 23607950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
OBJECTIVE To investigate changes in serum insulin-like growth factor-1 (IGF-1) and insulin-like growth factor-binding protein-3 (IGFBP-3) and their significance in children with left-to-right shunt congenital heart disease (CHD) associated with heart failure (HF). METHODS Twenty healthy children (control group), 20 children with HF, without basic heart disease (HF group), 20 children with left-to-right shunt CHD, without HF (CHD group), and 30 children with left-to-right shunt CHD associated with HF (CHD+HF group) were included in the study. These groups were compared in terms of serum IGF-1 and IGFBP-3 levels. According to the New York Heart Association (NYHA) Functional Classification, the CHD+HF group was further divided into NYHA-II, NYHA-III and NYHA-IV subgroups and the subgroups were compared in terms of serum IGF-1, IGFBP-3, and cardiac troponin I (cTnI) levels. The correlation of serum IGF-1 and IGFBP-3 levels with serum cTnI level in the CHD+HF group was analyzed. RESULTS The CHD group showed decreased serum IGF-1 and IGFBP-3 levels compared with the control group (P<0.01). The CHD+HF group showed a significantly decreased serum IGF-1 level compared with the control group (P<0.01) and CHD group (P<0.05). The HF group had significantly increased serum IGF-1 and IGFBP-3 levels compared with other groups (P<0.01). The NYHA-II subgroup had the highest serum IGF-1 level and the NYHA-IV subgroup had the lowest serum IGF-1 level (P<0.01). In the CHD+HF group, serum IGF-1 and IGFBP-3 levels were negatively correlated with serum cTnI level (r=-0.692, P<0.05; r=-0.530, P<0.05). CONCLUSIONS Serum IGF-1 level can be used as an objective condition evaluation indicator for CHD, and low serum IGF-1 level is a risk factor for HF. This also provides a clinical basis for treatment of HF using exogenous IGF-1.
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Affiliation(s)
- Jing Peng
- Department of Cardiology, Wuhan Medical Care Center for Women and Children, Wuhan, China
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Li S, Liu C, Hou PX, Sun DM, Cheng HM. Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors. ACS Nano 2012; 6:9657-9661. [PMID: 23025663 DOI: 10.1021/nn303070p] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 °C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of ∼10(3).
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Affiliation(s)
- Shisheng Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People's Republic of China
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Wu ZJ, Sun DM, Chen JZ, Chen XZ, Fang DM, Li N, Cheng P, Zhang GL. Analysis of cipadesin limonoids from Cipadessa cinerascens using electrospray ionization quadrupole time-of-flight tandem mass spectrometry and quantum chemical calculations. Rapid Commun Mass Spectrom 2012; 26:563-571. [PMID: 22302496 DOI: 10.1002/rcm.6126] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
RATIONALE Limonoids, a class of tetranortriterpenoids, exhibit various biological effects, such as insect antifeedant and growth regulating activities, antimicrobial activity, potent cell adhesion inhibitory effects, antimalarial activity, anticancer activities, and antioxidant activity. The potential application brings the need for reliable, fast and low-cost analysis of this class of compounds. METHODS Six cipadesin limonoids (1-6), including a pairs of isomers, from leaves and barks of Cipadessa cinerascens were investigated by electrospray ionization quadrupole time-of-flight tandem mass spectrometry (ESI-QTOF-MS/MS) in positive-ion mode. Characteristic processes were further studied by theoretical calculations. RESULTS 1,3-Hydrogen rearrangement might play a significant role in the cleavage of -O- bridge bond in ring B and further produces some characteristic ions. For [M + Na](+) precursor ions, the product ion at m/z 133 might indicate the structure of ring A and the losses of CO(2) and AcOH occur readily. Interestingly, the radical product ion at m/z 460 from [M + Na](+) ions seems to be the characteristic ion for compound 1. A deuterium-labeling experiment supported the processes forming the radical ion. For [M + NH(4)](+) ions, high-abundance product ions resulting from sequential loss of AcOH can be observed. In addition, a pairs of isomers was unambiguously differentiated based on MS or MS/MS spectra. CONCLUSIONS In summary, sufficient information obtained from fragmentation experiments of [M + Na](+), [M + NH(4)](+) or [M + H](+) precursor ions is especially valuable for rapid identification of these limonoids or their metabolites in complex mixtures. The high-abundance radical product ion is of scientific interest.
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Affiliation(s)
- Zhi-Jun Wu
- Chengdu Institute of Biology, Chinese Academy of Sciences, Chengdu, 610041, China
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Xiao CH, Tang H, Pu LJ, Sun DM, Ma JZ, Yu M, Duan RS. Diversity of nitrogenase (nifH) genes pool in soybean field soil after continuous and rotational cropping. J Basic Microbiol 2010; 50:373-9. [PMID: 20473958 DOI: 10.1002/jobm.200900317] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Diazotrophs diversity in soybean is a topic requiring thorough investigation since the previous researches have focused on only rice, forest, grass, water, etc. In this research, iron-only nitrogenase nifH gene was as genetic marker. PCR-RFLP was used to investigate the difference of diazotrophs community diversity in the soil from the continuous cropping (CC) (the 5-yr tilling of soybean) and the rotational cropping (RC) (soybean-corn) soils in the northeast of China. A total of 36 isolates were genetically characterized. Most of the isolates closely related to Azospirillum and Azotobacter. Eighty-six unique nifH gene sequences were obtained by cloning of the respective PCR products in two soil samples. It was found that the diversity of nifH genes in CC changed obviously compared with RC. Phylogenetic analysis indicated that most of the clones clustered together in a high homogeneity with some sequence retrieved from environmental representatives. The sequence diversity of nifH genes was high and the members of the Alphaproteobacteria were predominant in both samples. The experimental study also revealed the two non-proteobacterial diazotrophs, firmicutes and euryarchaeota. Through this study, it can be assumed that different tillage perhaps affected the nifH gene-containing population diversity.
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Affiliation(s)
- C H Xiao
- Subject of Physiology and Ecology, College of Life Science, Heilongjiang August First Land Reclamation University, Daqing, China
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Gu HY, Sun DM, Yu AM, Chen HY. [Polarographic behavior of latamoxef sodium and its trace determination]. Yao Xue Xue Bao 1997; 32:373-6. [PMID: 11498875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 04/16/2023]
Abstract
In the medium of HCl-KCl (pH 1-2) by means of cyclic voltammetry and differential pulse polarography (DPP), the mechanism of the electrode reaction for latamoxef sodium (Shiomarin) at static mercury drop electrode (SMDE) and hanging mercury drop electrode (HMDE) has been proposed. A sensitive method for the determination of nanomolar concentration of latamoxef sodium by DPP was developed. The peak potential was -0.62 V (vs Ag/AgCl). The linear range was from 1 x 10(-8) to 8 x 10(-4) mol.L-1, the detection limit was ca. 4 x 10(-9) mol.L-1(tac = 90 s). The method was applied to the determination of latamoxef sodium in injection with satisfactory results. The possibility for the direct determination of latamoxef sodium in mimic urine sample was also studied.
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Affiliation(s)
- H Y Gu
- Department of Chemistry, Nanjing University, Nanjing 210093
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Abstract
Adult female guinea pigs were fed semipurified diets containing increasing concentrations of saturated fat (2.5%, 7.5%, 15%, and 25% wt/wt) to determine effects of exchanging fat-carbohydrate calories on lipoprotein metabolism. Plasma very-low-density lipoprotein (VLDL) and high-density lipoprotein (HDL) did not vary but plasma low-density lipoprotein (LDL) concentrations increased with increasing fat calories. LDL cholesterol values were 42 +/- 25, 61 +/- 17, 92 +/- 25, and 98 +/- 21 mg/dL (mean +/- SD, n = 5), respectively. The relative proportion of cholesteryl ester increased and triacylglycerol (TAG) decreased for VLDL, LDL, and HDL as dietary fat increased. Plasma lecithin cholesterol acyltransferase (LCAT) activity was positively correlated with HDL cholesteryl ester content. Hepatic cholesterol and TAG concentrations were highest in animals fed 25% fat (P < .01). Hepatic apolipoprotein (apo) B/E receptor maximal binding capacity (Bmax) was 30% higher in animals fed 2.5% and 7.5% fat as compared with those fed 15% and 25% fat (P < .01) and inversely correlated with plasma LDL (r = -.85, P < .01). In contrast, HDL binding to guinea pig hepatic membranes exhibited a significant positive correlation with dietary fat quantity (r = .98, P < .001), consistent with a dose-response with increasing fat calories. The activity of hepatic 3-hydroxy-3-methyl glutaryl coenzyme A (HMG CoA) reductase was not affected by the amount of dietary fat, whereas the activity of acyl CoA:cholesterol acyltransferase (ACAT) was significantly increased in animals fed 25% fat (P < .05). Hepatic free-cholesterol and ACAT activity exhibited a positive correlation for all dietary groups (r = .75, P < .001). These results demonstrate that exchange of saturated dietary fat for carbohydrate calories results in significant modifications in the regulation of metabolic pathways that determine plasma LDL concentrations and hepatic cholesterol homeostasis.
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Affiliation(s)
- M L Fernandez
- Department of Nutritional Sciences, University of Arizona, Tucson 85721, USA
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Fernandez ML, Ruiz LR, Conde AK, Sun DM, Erickson SK, McNamara DJ. Psyllium reduces plasma LDL in guinea pigs by altering hepatic cholesterol homeostasis. J Lipid Res 1995; 36:1128-38. [PMID: 7658161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2023] Open
Abstract
Male Hartley guinea pigs were fed semipurified diets containing various levels of psyllium and cholesterol to determine mechanisms by which psyllium lowers plasma low density lipoprotein (LDL) concentrations. Four diets were tested: control diets with 12.5% (w/w) cellulose, and psyllium diets in which cellulose was partially replaced with 7.5% (w/w) psyllium. Two levels of dietary cholesterol were used, either low (LC, 0.04%, w/w) or high (HC, 0.25%, w/w). Plasma LDL was reduced by 30 and 54% with psyllium intake in the LC and HC groups, respectively (P < 0.001), while plasma very low density lipoprotein (VLDL) was lowered only in the HC group (P < 0.001). Psyllium intake modified LDL composition and size compared to LDL from control animals with a lower proportion of cholesteryl ester and higher proportion of triacylglycerol, lower molecular weight, smaller diameter, and higher peak density (P < 0.001). Plasma VLDL from animals fed the psyllium-HC diet compared to the control-HC contained lower relative proportions of free and esterified cholesterol and a higher proportion of triacylglycerol, compositional characteristics similar to VLDL from animals fed LC diets. Hepatic free and esterified cholesterol concentrations were significantly reduced by psyllium an average of 25 and 55%, respectively, while hepatic HMG-CoA reductase activity was increased in both psyllium groups compared to the respective controls (P < 0.001). In addition, psyllium intake reduced hepatic acyl-CoA:cholesterol acyltransferase (ACAT) activity in both the LC and HC groups (P < 0.001) and increased hepatic membrane apoB/E receptor number (Bmax) by 17 and 52% for animals fed LC and HC diets, respectively (P < 0.005). Significant psyllium-induced increases in cholesterol 7 alpha-hydroxylase of 4- and 1.6-fold were also observed in animals fed the LC and HC diets respectively (P < 0.001). These results indicate that psyllium generates a negative cholesterol balance across the liver which results in induction of cholesterol 7 alpha-hydroxylase and HMG-CoA reductase and suppression of ACAT activities, upregulation of apoB/E receptors, and secretion of smaller VLDL particles, metabolic alterations that contribute to a lowering of plasma LDL cholesterol levels.
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Affiliation(s)
- M L Fernandez
- Department of Nutritional Sciences, University of Arizona, Tucson 85721, USA
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Fernandez ML, Sun DM, Tosca M, McNamara DJ. Guar gum effects on plasma low-density lipoprotein and hepatic cholesterol metabolism in guinea pigs fed low- and high-cholesterol diets: a dose-response study. Am J Clin Nutr 1995; 61:127-34. [PMID: 7825524 DOI: 10.1093/ajcn/61.1.127] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023] Open
Abstract
Guinea pigs were fed semipurified diets containing either 0% or 12.5% guar gum (GG) with 0.04% cholesterol or increasing concentrations of GG (0%, 2.5%, 5%, 7.5%, 10%, and 12.5%) with 0.25% cholesterol (by wt). Compared to the 0% GG diet with 0.04% cholesterol, intake of the 12.5% GG diet with 0.04% cholesterol lowered plasma low-density-lipoprotein (LDL) concentrations, the ratio of LDL cholesteryl ester to protein, hepatic cholesterol concentrations, and the activity of acyl-CoA:cholesterol acyltransferase (ACAT), and increased 3-hydroxy-3-methylglutaryl coenzyme A (HMG CoA) reductase activity and hepatic apo B/E receptor number (P < 0.01). Intake of GG by animals fed 0.25% cholesterol diets resulted in modest effects on hepatic cholesterol pools and plasma LDL concentrations; however, significant negative correlations were found between both plasma LDL cholesterol and hepatic free cholesterol concentrations with the amount of dietary GG (P < 0.05). Hepatic HMG-CoA reductase was suppressed by the 0.25% cholesterol intake, and GG did not reverse this suppression. In contrast, ACAT activity was negatively correlated with the amount of dietary GG (P < 0.05), and GG intake increased the number of hepatic apo B/E receptors at all intakes with the 0.25% cholesterol diets. These results demonstrate that intake of GG significantly alters endogenous cholesterol metabolism by decreasing hepatic cholesterol pools, altering hepatic cholesterol homeostasis, and reducing plasma LDL concentrations.
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Affiliation(s)
- M L Fernandez
- Department of Nutritional Sciences, University of Arizona, Tucson 85721
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Fernandez ML, Sun DM, Tosca MA, McNamara DJ. Citrus pectin and cholesterol interact to regulate hepatic cholesterol homeostasis and lipoprotein metabolism: a dose-response study in guinea pigs. Am J Clin Nutr 1994; 59:869-78. [PMID: 8147332 DOI: 10.1093/ajcn/59.4.869] [Citation(s) in RCA: 52] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023] Open
Abstract
Guinea pigs were fed increasing concentrations of citrus pectin (CP) (0-12.5%, wt/wt) with low (LC, 0.04%) or high (HC, 0.25%) cholesterol. Animals fed LC diets had reduced plasma LDL concentrations with 10% and 12.5% CP and hepatic membrane apolipoprotein B/E receptor expression increased with high dosages of CP. Hepatic 3-hydroxy-3-methylglutaryl coenzyme A (HMG-CoA) reductase activity increased with 12.5% CP whereas hepatic cholesterol concentrations and acyl-CoA:cholesterol acyltransferase (ACAT) activity were not different. In contrast, with HC diets, plasma LDL concentrations were reduced in a dose-response manner by 29%, 30%, and 67% with 7.5%, 10%, and 12.5% CP intake (P < 0.001) and apolipoprotein B/E receptor number was increased and inversely correlated with plasma LDL in the HC group (r = -0.81, P < 0.005). Animals fed HC diets had a dose-dependent decrease in hepatic cholesterol and ACAT activity, with intake of 12.5% CP having the major effect. Hepatic HMG-CoA reductase activity was suppressed by HC diets and only intake of 12.5% CP reversed this suppression. The most significant effects of CP on hepatic cholesterol, enzymes of hepatic cholesterol homeostasis, and the apolipoprotein B/E receptor were in animals fed the HC diets. These metabolic alterations partially explain the reduced plasma LDL of guinea pigs fed large amounts of CP.
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Affiliation(s)
- M L Fernandez
- Department of Nutritional Sciences, University of Arizona, Tucson 85721
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